OTHER DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

K4M511533E-YF1L

Samsung

SYNCHRONOUS DRAM

OTHER

54

FBGA

8192

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

160 mA

33554432 words

1,2,4,8,FP

COMMON

3

3

16

GRID ARRAY, FINE PITCH

BGA54,9X9,32

DRAMs

.8 mm

70 Cel

3-STATE

32MX16

32M

-25 Cel

Tin/Lead (Sn/Pb)

BOTTOM

S-PBGA-B54

105 MHz

Not Qualified

536870912 bit

e0

.0015 Amp

1,2,4,8

7 ns

K4N51163QE-GC200

Samsung

GDDR2 DRAM

OTHER

84

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

340 mA

33554432 words

4,8

COMMON

1.8

1.8

16

GRID ARRAY, FINE PITCH

BGA84,9X15,32

DRAMs

.8 mm

85 Cel

3-STATE

32MX16

32M

0 Cel

BOTTOM

R-PBGA-B84

500 MHz

Not Qualified

536870912 bit

.008 Amp

4,8

.35 ns

M393T6553EZA-CD5

Samsung

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

67108864 words

YES

COMMON

1.8

1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

Other Memory ICs

1 mm

95 Cel

3-STATE

64MX72

64M

0 Cel

DUAL

1

R-XDMA-N240

1.9 V

267 MHz

Not Qualified

4831838208 bit

1.7 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.5 ns

M393T2953BZ3-CD5

Samsung

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

3785 mA

134217728 words

YES

COMMON

1.8

1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

95 Cel

3-STATE

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N240

1.9 V

267 MHz

Not Qualified

9663676416 bit

1.7 V

AUTO/SELF REFRESH

.784 Amp

.5 ns

K4T56083QF-GCD5

Samsung

DDR2 DRAM

OTHER

60

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

255 mA

33554432 words

4,8

YES

COMMON

1.8

1.8

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA60,9X11,32

DRAMs

.8 mm

95 Cel

3-STATE

32MX8

32M

0 Cel

TIN LEAD

BOTTOM

1

R-PBGA-B60

3

1.9 V

1.2 mm

267 MHz

11 mm

Not Qualified

268435456 bit

1.7 V

AUTO/SELF REFRESH

e0

240

.008 Amp

4,8

13 mm

.5 ns

M395T1K66AZ4-YE68

Samsung

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

4000 mA

1073741824 words

YES

COMMON

1.55

1.5,1.55

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

Other Memory ICs

1 mm

85 Cel

3-STATE

1GX72

1G

0 Cel

DUAL

1

R-XDMA-N240

3

1.6 V

333 MHz

Not Qualified

77309411328 bit

1.5 V

AUTO/SELF REFRESH

260

2.395 Amp

K4M563233G-HN60T

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

180 mA

8388608 words

1,2,4,8,FP

COMMON

3/3.3

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

85 Cel

8MX32

8M

-25 Cel

BOTTOM

R-PBGA-B90

3

166 MHz

Not Qualified

268435456 bit

260

.001 Amp

1,2,4,8

5.4 ns

K4T51043QG-HLE6

Samsung

DDR2 DRAM

OTHER

60

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

175 mA

134217728 words

4,8

COMMON

1.8

1.8

4

GRID ARRAY, FINE PITCH

BGA60,9X11,32

DRAMs

.8 mm

95 Cel

3-STATE

128MX4

128M

0 Cel

BOTTOM

R-PBGA-B60

333 MHz

Not Qualified

536870912 bit

.005 Amp

4,8

.45 ns

M470T2863EH3-LE7

Samsung

DDR DRAM MODULE

OTHER

200

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

792 mA

134217728 words

YES

COMMON

1.8

1.8

8

MICROELECTRONIC ASSEMBLY

DIMM200,24

DRAMs

.6 mm

85 Cel

3-STATE

128MX8

128M

0 Cel

ZIG-ZAG

1

R-XZMA-N200

3

1.9 V

30.15 mm

400 MHz

3.8 mm

Not Qualified

1073741824 bit

1.7 V

AUTO/SELF REFRESH

260

67.6 mm

.4 ns

K4J52324KI-HC7A

Samsung

GDDR3 DRAM

OTHER

136

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

760 mA

16777216 words

4,8

COMMON

1.8

1.8

32

GRID ARRAY, FINE PITCH

BGA136,12X17,32

DRAMs

.8 mm

85 Cel

3-STATE

16MX32

16M

0 Cel

BOTTOM

R-PBGA-B136

1300 MHz

Not Qualified

536870912 bit

260

.095 Amp

.18 ns

K4J55323QG-BC14

Samsung

DDR3 DRAM

OTHER

136

TFBGA

4096

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

935 mA

8388608 words

4,8

YES

COMMON

1.8

1.8

32

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA136,12X17,32

DRAMs

.8 mm

85 Cel

3-STATE

8MX32

8M

0 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B136

3

1.9 V

1.2 mm

700 MHz

11 mm

Not Qualified

268435456 bit

1.7 V

AUTO/SELF REFRESH

e1

260

.09 Amp

4,8

14 mm

.26 ns

K4M51163LC-BF75T

Samsung

SYNCHRONOUS DRAM

OTHER

54

FBGA

8192

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

180 mA

33554432 words

1,2,4,8,FP

COMMON

2.5

2.5

16

GRID ARRAY, FINE PITCH

BGA54,9X9,32

DRAMs

.8 mm

70 Cel

3-STATE

32MX16

32M

-25 Cel

BOTTOM

S-PBGA-B54

133 MHz

Not Qualified

536870912 bit

.001 Amp

1,2,4,8

5.4 ns

M391T5663QZ3-CF7

Samsung

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2565 mA

268435456 words

YES

COMMON

1.8

1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

Other Memory ICs

1 mm

95 Cel

3-STATE

256MX72

256M

0 Cel

DUAL

1

R-XDMA-N240

3

1.9 V

400 MHz

Not Qualified

19327352832 bit

1.7 V

AUTO/SELF REFRESH

260

.27 Amp

.4 ns

K4M28323LH-FN75

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

130 mA

4194304 words

1,2,4,8,FP

COMMON

2.5

2.5

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

85 Cel

3-STATE

4MX32

4M

-25 Cel

BOTTOM

R-PBGA-B90

133 MHz

Not Qualified

134217728 bit

.0005 Amp

1,2,4,8

5.4 ns

K4T51083QE-ZCD5T

Samsung

DDR2 DRAM

OTHER

60

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

180 mA

67108864 words

4,8

COMMON

1.8

1.8

8

GRID ARRAY, FINE PITCH

BGA60,9X11,32

DRAMs

.8 mm

95 Cel

3-STATE

64MX8

64M

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B60

3

266 MHz

Not Qualified

536870912 bit

e1

260

.008 Amp

4,8

.5 ns

M378T5663AZ3-CE600

Samsung

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

2760 mA

268435456 words

COMMON

1.8

1.8

64

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

95 Cel

3-STATE

256MX64

256M

0 Cel

DUAL

R-PDMA-N240

333 MHz

Not Qualified

17179869184 bit

.24 Amp

.45 ns

K4S513233F-MC75

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

300 mA

16777216 words

1,2,4,8,FP

COMMON

3/3.3

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX32

16M

-25 Cel

Tin/Lead (Sn/Pb)

BOTTOM

R-PBGA-B90

133 MHz

Not Qualified

536870912 bit

e0

.001 Amp

1,2,4,8

5.4 ns

K4S64163LH-BN1L

Samsung

SYNCHRONOUS DRAM

OTHER

54

FBGA

4096

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

100 mA

4194304 words

1,2,4,8,FP

COMMON

1.8/2.5,2.5

16

GRID ARRAY, FINE PITCH

BGA54,9X9,32

DRAMs

.8 mm

85 Cel

3-STATE

4MX16

4M

-25 Cel

BOTTOM

S-PBGA-B54

105 MHz

Not Qualified

67108864 bit

.0005 Amp

1,2,4,8

7 ns

K4M28163LH-RL75T

Samsung

SYNCHRONOUS DRAM

OTHER

54

FBGA

4096

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

130 mA

8388608 words

1,2,4,8,FP

COMMON

2.5

2.5

16

GRID ARRAY, FINE PITCH

BGA54,9X9,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B54

1

133 MHz

Not Qualified

134217728 bit

.0005 Amp

1,2,4,8

5.4 ns

K4T51163QI-HCE7T

Samsung

DDR2 DRAM

OTHER

84

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

200 mA

33554432 words

4,8

COMMON

1.8

1.8

16

GRID ARRAY, FINE PITCH

BGA84,9X15,32

DRAMs

.8 mm

95 Cel

3-STATE

32MX16

32M

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B84

3

400 MHz

Not Qualified

536870912 bit

e1

260

.008 Amp

4,8

.4 ns

K4B510846E-ZCH9

Samsung

DDR3 DRAM

OTHER

82

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

67108864 words

8

COMMON

1.5

1.5

8

GRID ARRAY, FINE PITCH

BGA82,11X13,32

DRAMs

.8 mm

85 Cel

3-STATE

64MX8

64M

0 Cel

BOTTOM

R-PBGA-B82

667 MHz

Not Qualified

536870912 bit

8

.225 ns

K4M511533E-YL1L0

Samsung

SYNCHRONOUS DRAM

OTHER

54

TFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

33554432 words

YES

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

70 Cel

32MX16

32M

-25 Cel

BOTTOM

1

R-PBGA-B54

3.6 V

1.2 mm

10 mm

Not Qualified

536870912 bit

2.7 V

AUTO/SELF REFRESH

11.5 mm

7 ns

M393T2953EZA-CE7

Samsung

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

134217728 words

YES

COMMON

1.8

1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

95 Cel

3-STATE

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N240

1.9 V

400 MHz

Not Qualified

9663676416 bit

1.7 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.4 ns

K4S643233H-FN600

Samsung

SYNCHRONOUS DRAM

OTHER

90

LFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

2097152 words

YES

3

32

GRID ARRAY, LOW PROFILE, FINE PITCH

.8 mm

85 Cel

2MX32

2M

-25 Cel

BOTTOM

1

R-PBGA-B90

3.6 V

1.4 mm

8 mm

Not Qualified

67108864 bit

2.7 V

AUTO/SELF REFRESH

30

240

13 mm

5.4 ns

M392T2950CZA-CE6

Samsung

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

4830 mA

134217728 words

YES

COMMON

1.8

1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

Other Memory ICs

1 mm

95 Cel

3-STATE

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N240

1.9 V

333 MHz

Not Qualified

9663676416 bit

1.7 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.724 Amp

.45 ns

K4M56323LE-EC1H

Samsung

SYNCHRONOUS DRAM

OTHER

90

LFBGA

4096

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

290 mA

8388608 words

1,2,4,8,FP

YES

COMMON

2.5

1.8/2.5,2.5

32

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

70 Cel

8MX32

8M

-25 Cel

BOTTOM

1

R-PBGA-B90

3

2.7 V

1.4 mm

105 MHz

11 mm

Not Qualified

268435456 bit

2.3 V

AUTO/SELF REFRESH

260

.0012 Amp

1,2,4,8

13 mm

7 ns

K4T2G084QA-HLF70

Samsung

DDR2 DRAM

OTHER

68

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

350 mA

268435456 words

4,8

COMMON

1.8

1.8

8

GRID ARRAY, FINE PITCH

BGA68,9X19,32

DRAMs

.8 mm

95 Cel

3-STATE

256MX8

256M

0 Cel

BOTTOM

R-PBGA-B68

400 MHz

Not Qualified

2147483648 bit

.008 Amp

4,8

.4 ns

K4S64323LH-FF1H0

Samsung

SYNCHRONOUS DRAM

OTHER

90

LFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

2097152 words

YES

2.5

32

GRID ARRAY, LOW PROFILE, FINE PITCH

.8 mm

70 Cel

2MX32

2M

-25 Cel

BOTTOM

1

R-PBGA-B90

2.7 V

1.4 mm

8 mm

Not Qualified

67108864 bit

2.3 V

AUTO/SELF REFRESH

30

240

13 mm

7 ns

K4T1G044QQ-HCE70

Samsung

DDR2 DRAM

OTHER

60

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

245 mA

268435456 words

4,8

YES

COMMON

1.8

1.8

4

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA60,9X11,32

DRAMs

.8 mm

95 Cel

3-STATE

256MX4

256M

0 Cel

BOTTOM

1

R-PBGA-B60

1.9 V

1.2 mm

400 MHz

9 mm

Not Qualified

1073741824 bit

1.7 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

4,8

11 mm

.4 ns

K4S64163LF-RG1H

Samsung

SYNCHRONOUS DRAM

OTHER

54

VFBGA

4096

SQUARE

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

110 mA

4194304 words

1,2,4,8,FP

YES

COMMON

2.5

1.8/2.5,2.5

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA54,9X9,32

DRAMs

.8 mm

85 Cel

3-STATE

4MX16

4M

-25 Cel

TIN LEAD

BOTTOM

1

S-PBGA-B54

2.7 V

1 mm

105 MHz

8 mm

Not Qualified

67108864 bit

2.3 V

AUTO/SELF REFRESH

e0

.0005 Amp

1,2,4,8

8 mm

7 ns

K4M51323PC-DC90

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

150 mA

16777216 words

1,2,4,8,FP

COMMON

1.8

1.8

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX32

16M

-25 Cel

MATTE TIN

BOTTOM

R-PBGA-B90

1

111 MHz

Not Qualified

536870912 bit

e3

.0003 Amp

1,2,4,8

7 ns

M391B5673FH0-CH9

Samsung

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1800 mA

268435456 words

YES

COMMON

1.5

1.5

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

Other Memory ICs

1 mm

85 Cel

3-STATE

256MX72

256M

0 Cel

DUAL

1

R-XDMA-N240

2

1.575 V

30.15 mm

667 MHz

Not Qualified

19327352832 bit

1.425 V

AUTO/SELF REFRESH

260

.18 Amp

133.35 mm

20 ns

K4M28163PH-BF1L0

Samsung

SYNCHRONOUS DRAM

OTHER

54

VFBGA

4096

SQUARE

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

85 mA

8388608 words

1,2,4,8,FP

YES

COMMON

1.8

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA54,9X9,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX16

8M

-25 Cel

TIN SILVER COPPER

BOTTOM

1

S-PBGA-B54

2

1.95 V

1 mm

111 MHz

8 mm

Not Qualified

134217728 bit

1.7 V

AUTO/SELF REFRESH

e1

.00001 Amp

1,2,4,8

8 mm

7 ns

M393T5660MZ0-CD5

Samsung

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

7808 mA

268435456 words

YES

COMMON

1.8

1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

95 Cel

3-STATE

256MX72

256M

0 Cel

DUAL

1

R-XDMA-N240

2

1.9 V

267 MHz

Not Qualified

19327352832 bit

1.7 V

AUTO/SELF REFRESH

.856 Amp

.5 ns

M470T6464AZ3-LCC

Samsung

DDR DRAM MODULE

OTHER

200

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1320 mA

67108864 words

YES

COMMON

1.8

1.8

64

MICROELECTRONIC ASSEMBLY

DIMM200,24

DRAMs

.6 mm

95 Cel

3-STATE

64MX64

64M

0 Cel

ZIG-ZAG

1

R-XZMA-N200

2

1.9 V

200 MHz

Not Qualified

4294967296 bit

1.7 V

AUTO/SELF REFRESH

.032 Amp

.6 ns

K4M51163PC-RC90T

Samsung

SYNCHRONOUS DRAM

OTHER

54

FBGA

8192

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

150 mA

33554432 words

1,2,4,8,FP

COMMON

1.8

1.8

16

GRID ARRAY, FINE PITCH

BGA54,9X9,32

DRAMs

.8 mm

70 Cel

3-STATE

32MX16

32M

-25 Cel

BOTTOM

S-PBGA-B54

1

111 MHz

Not Qualified

536870912 bit

.0003 Amp

1,2,4,8

7 ns

K4S51153LC-YS15

Samsung

SYNCHRONOUS DRAM

OTHER

54

LFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

140 mA

33554432 words

1,2,4,8,FP

YES

COMMON

2.5

1.8/2.5,2.5

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA54,9X9,32

DRAMs

.8 mm

85 Cel

3-STATE

32MX16

32M

-25 Cel

TIN LEAD

BOTTOM

1

R-PBGA-B54

2.7 V

1.3 mm

66 MHz

9.5 mm

Not Qualified

536870912 bit

2.3 V

AUTO/SELF REFRESH

e0

.0015 Amp

1,2,4,8

15.5 mm

9 ns

K4S643233H-HN600

Samsung

SYNCHRONOUS DRAM

OTHER

90

LFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

2097152 words

YES

3

32

GRID ARRAY, LOW PROFILE, FINE PITCH

.8 mm

85 Cel

2MX32

2M

-25 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B90

3

3.6 V

1.4 mm

8 mm

Not Qualified

67108864 bit

2.7 V

AUTO/SELF REFRESH

e1

13 mm

5.4 ns

K4N51163QC-ZC330

Samsung

DDR2 DRAM

OTHER

84

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

33554432 words

4,8

YES

COMMON

1.8

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA84,9X15,32

DRAMs

.8 mm

85 Cel

3-STATE

32MX16

32M

0 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B84

3

1.9 V

1.2 mm

300 MHz

11 mm

Not Qualified

536870912 bit

1.7 V

AUTO/SELF REFRESH

e1

260

.01 Amp

4,8

13 mm

.47 ns

M393B2G73BH0-YH9

Samsung

OTHER

240

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

2675 mA

2147483648 words

COMMON

1.35

1.35

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

Other Memory ICs

1 mm

85 Cel

3-STATE

2GX72

2G

0 Cel

DUAL

R-PDMA-N240

667 MHz

Not Qualified

154618822656 bit

.72 Amp

.255 ns

K4S511533F-PC1L0

Samsung

SYNCHRONOUS DRAM

OTHER

54

TFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

33554432 words

YES

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

70 Cel

32MX16

32M

-25 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B54

3

3.6 V

1.2 mm

10 mm

Not Qualified

536870912 bit

2.7 V

AUTO/SELF REFRESH

e1

11.5 mm

7 ns

M474B1G73QH0-YK0

Samsung

DDR DRAM MODULE

OTHER

204

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1073741824 words

YES

1.35

72

MICROELECTRONIC ASSEMBLY

.6 mm

85 Cel

1GX72

1G

0 Cel

DUAL

1

R-XDMA-N204

1.45 V

30.13 mm

3.8 mm

77309411328 bit

1.283 V

AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX

67.6 mm

M395T2863QZ4-CE63

Samsung

OTHER

240

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

134217728 words

COMMON

1.5,1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

Other Memory ICs

1 mm

85 Cel

3-STATE

128MX72

128M

0 Cel

DUAL

R-PDMA-N240

333 MHz

Not Qualified

9663676416 bit

260

K4M641633K-BL75T

Samsung

SYNCHRONOUS DRAM

OTHER

54

FBGA

4096

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

115 mA

4194304 words

1,2,4,8,FP

COMMON

3/3.3

16

GRID ARRAY, FINE PITCH

BGA54,9X9,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

-25 Cel

MATTE TIN

BOTTOM

S-PBGA-B54

1

133 MHz

Not Qualified

67108864 bit

e3

.0005 Amp

1,2,4,8

5.4 ns

M392B1G70BH0-CMA

Samsung

OTHER

240

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1073741824 words

COMMON

1.5

1.5

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

Other Memory ICs

1 mm

85 Cel

3-STATE

1GX72

1G

0 Cel

DUAL

R-PDMA-N240

933 MHz

Not Qualified

77309411328 bit

.195 ns

M470T2864DZ3-LE6

Samsung

SYNCHRONOUS DRAM MODULE

OTHER

200

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1200 mA

134217728 words

YES

COMMON

1.8

1.8

64

MICROELECTRONIC ASSEMBLY

DIMM200,24

DRAMs

.6 mm

95 Cel

3-STATE

128MX64

128M

0 Cel

DUAL

1

R-XDMA-N200

1.9 V

333 MHz

Not Qualified

8589934592 bit

1.7 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.064 Amp

.45 ns

K4T51043QE-ZCE60

Samsung

DDR2 DRAM

OTHER

60

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

180 mA

134217728 words

4,8

YES

COMMON

1.8

1.8

4

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA60,9X11,32

DRAMs

.8 mm

95 Cel

3-STATE

128MX4

128M

0 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B60

3

1.9 V

1.2 mm

333 MHz

9 mm

Not Qualified

536870912 bit

1.7 V

AUTO/SELF REFRESH

e1

260

.008 Amp

4,8

11 mm

.45 ns

M378T2953CZ0-CD5

Samsung

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2040 mA

134217728 words

YES

COMMON

1.8

1.8

64

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

95 Cel

3-STATE

128MX64

128M

0 Cel

DUAL

1

R-XDMA-N240

1.9 V

267 MHz

Not Qualified

8589934592 bit

1.7 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.128 Amp

.5 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.