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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
TC59LM905AMB-55	Toshiba	DDR1 DRAM	OTHER	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS	BALL		SYNCHRONOUS		67108864 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		64MX8	64M	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B64		2.65 V	1.2 mm		12.7 mm	Not Qualified	536870912 bit	2.35 V	AUTO/SELF REFRESH	e0					16.5 mm	.75 ns
TC59LM836DKB-30	Toshiba	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS	BALL		SYNCHRONOUS		8388608 words		YES		2.5		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		8MX36	8M	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B144		2.625 V	1.2 mm		11 mm	Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH	e0					18.5 mm	.5 ns
TC59LM906AMG-50	Toshiba	DDR1 DRAM	OTHER	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS	BALL		SYNCHRONOUS	350 mA	67108864 words	2,4	YES	COMMON	2.5	1.5/1.8,2.5	8	GRID ARRAY, THIN PROFILE	BGA60,6X15,40	DRAMs	1 mm	85 Cel	3-STATE	64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B64		2.625 V	1.2 mm	200 MHz	12.7 mm	Not Qualified	536870912 bit	2.375 V	AUTO/SELF REFRESH	e1	NOT SPECIFIED	250	.08 Amp	2,4	16.5 mm	.65 ns
TC59LM914AMG-37	Toshiba	DDR1 DRAM	OTHER	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS	BALL		SYNCHRONOUS	450 mA	33554432 words	2,4	YES	COMMON	2.5	1.5/1.8,2.5	16	GRID ARRAY, THIN PROFILE	BGA60,6X15,40	DRAMs	1 mm	85 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B64		2.625 V	1.2 mm	266 MHz	12.7 mm	Not Qualified	536870912 bit	2.375 V	AUTO/SELF REFRESH	e1	NOT SPECIFIED	250	.09 Amp	2,4	16.5 mm	.5 ns
TC59LM818DMB-30	Toshiba	DDR1 DRAM	OTHER	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS	BALL		SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		16MX18	16M	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B60		2.625 V	1.2 mm		9 mm	Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH	e0					16.5 mm	.5 ns
TC59LM913AMB-60	Toshiba	DDR1 DRAM	OTHER	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS	BALL		SYNCHRONOUS		33554432 words		YES		2.5		16	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		32MX16	32M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B64		2.65 V	1.2 mm		12.7 mm	Not Qualified	536870912 bit	2.35 V	AUTO/SELF REFRESH	e0					16.5 mm	26 ns
TC59LM913AMB-55	Toshiba	DDR1 DRAM	OTHER	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS	BALL		SYNCHRONOUS		33554432 words		YES		2.5		16	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		32MX16	32M	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B64		2.65 V	1.2 mm		12.7 mm	Not Qualified	536870912 bit	2.35 V	AUTO/SELF REFRESH	e0					16.5 mm	.75 ns
TC59LM836DKG-33	Toshiba	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS	BALL		SYNCHRONOUS	800 mA	8388608 words	2,4	YES	COMMON	2.5	1.5/1.8,2.5	36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	8MX36	8M	0 Cel		BOTTOM	1	R-PBGA-B144		2.625 V	1.2 mm	300 MHz	11 mm	Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		2,4	18.5 mm	.5 ns
TC59LM836DMB-40	Toshiba	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS	BALL		SYNCHRONOUS		8388608 words	2,4	YES	COMMON	2.5	1.5/1.8,2.5	36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	8MX36	8M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B144		2.625 V	1.2 mm	200 MHz	11 mm	Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH	e0				2,4	18.5 mm	.6 ns
TC59LM818DMG-33	Toshiba	DDR1 DRAM	OTHER	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS	BALL		SYNCHRONOUS		16777216 words	2,4	YES	COMMON	2.5	1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA60,6X15,40	DRAMs	1 mm	85 Cel	3-STATE	16MX18	16M	0 Cel		BOTTOM	1	R-PBGA-B60		2.625 V	1.2 mm	222 MHz	9 mm	Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		2,4	16.5 mm	.5 ns
TC59LM914AMB-45	Toshiba	DDR1 DRAM	OTHER	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS	BALL		SYNCHRONOUS		33554432 words	2,4	YES	COMMON	2.5	1.5/1.8,2.5	16	GRID ARRAY, THIN PROFILE	BGA60,6X15,40	DRAMs	1 mm	85 Cel	3-STATE	32MX16	32M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60		2.625 V	1.2 mm	222 MHz	12.7 mm	Not Qualified	536870912 bit	2.375 V	AUTO/SELF REFRESH	e0				2,4	16.5 mm	22 ns
TC59LM905AMB-50	Toshiba	DDR1 DRAM	OTHER	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS	BALL		SYNCHRONOUS		67108864 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		64MX8	64M	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B64		2.65 V	1.2 mm		12.7 mm	Not Qualified	536870912 bit	2.35 V	AUTO/SELF REFRESH	e0					16.5 mm	.65 ns
TC59LM818DMG-40	Toshiba	DDR1 DRAM	OTHER	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS	BALL		SYNCHRONOUS		16777216 words	2,4	YES	COMMON	2.5	1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA60,6X15,40	DRAMs	1 mm	85 Cel	3-STATE	16MX18	16M	0 Cel		BOTTOM	1	R-PBGA-B60		2.625 V	1.2 mm	200 MHz	9 mm	Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		2,4	16.5 mm	.65 ns
TC59LM906AMG-37	Toshiba	DDR1 DRAM	OTHER	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS	BALL		SYNCHRONOUS	450 mA	67108864 words	2,4	YES	COMMON	2.5	1.5/1.8,2.5	8	GRID ARRAY, THIN PROFILE	BGA60,6X15,40	DRAMs	1 mm	85 Cel	3-STATE	64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B64		2.625 V	1.2 mm	266 MHz	12.7 mm	Not Qualified	536870912 bit	2.375 V	AUTO/SELF REFRESH	e1	NOT SPECIFIED	250	.09 Amp	2,4	16.5 mm	.5 ns
TC59LM836DKG-40	Toshiba	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS	BALL		SYNCHRONOUS	750 mA	8388608 words	2,4	YES	COMMON	2.5	1.5/1.8,2.5	36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	8MX36	8M	0 Cel		BOTTOM	1	R-PBGA-B144		2.625 V	1.2 mm	250 MHz	11 mm	Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		2,4	18.5 mm	.6 ns
TC59LM913AMB-50	Toshiba	DDR1 DRAM	OTHER	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS	BALL		SYNCHRONOUS		33554432 words		YES		2.5		16	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		32MX16	32M	0 Cel		BOTTOM	1	R-PBGA-B64		2.65 V	1.2 mm		12.7 mm	Not Qualified	536870912 bit	2.35 V	AUTO/SELF REFRESH						16.5 mm	.65 ns
TC59LM906AMB-37	Toshiba	DDR1 DRAM	OTHER	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS	BALL		SYNCHRONOUS		67108864 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		64MX8	64M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60		2.625 V	1.2 mm		12.7 mm	Not Qualified	536870912 bit	2.375 V	AUTO/SELF REFRESH	e0					16.5 mm	22 ns
TC59LM906AMG-45	Toshiba	DDR1 DRAM	OTHER	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS	BALL		SYNCHRONOUS	400 mA	67108864 words	2,4	YES	COMMON	2.5	1.5/1.8,2.5	8	GRID ARRAY, THIN PROFILE	BGA60,6X15,40	DRAMs	1 mm	85 Cel	3-STATE	64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B64		2.65 V	1.2 mm	222 MHz	12.7 mm	Not Qualified	536870912 bit	2.35 V	AUTO/SELF REFRESH	e1	NOT SPECIFIED	250	.085 Amp	2,4	16.5 mm	.6 ns
TC59R0409SVP	Toshiba	RAMBUS DRAM	OTHER	32	SIP		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		524288 words		YES		5		9	IN-LINE			.65 mm	100 Cel	3-STATE	512KX9	512K	0 Cel		SINGLE	1	R-PSIP-T32		5.5 V	11.5 mm		1.2 mm	Not Qualified	4718592 bit	4.5 V	SELF CONTAINED REFRESH; RAMBUS SIGNALING LOGIC INTERFACE; OPTEMP SPECIFIED AS TJ						25 mm
TC59LM905AMB-60	Toshiba	DDR1 DRAM	OTHER	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS	BALL		SYNCHRONOUS		67108864 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		64MX8	64M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B64		2.65 V	1.2 mm		12.7 mm	Not Qualified	536870912 bit	2.35 V	AUTO/SELF REFRESH	e0					16.5 mm	26 ns
UPD48576118FF-E18-DW1	Renesas Electronics	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	1078 mA	33554432 words	2,4,8		SEPARATE	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	32MX18	32M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	533 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp	2,4,8	18.5 mm	.12 ns
UPD48288118AFF-E25-DW1-A	Renesas Electronics	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		16777216 words			SEPARATE	1.8	1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	16MX18	16M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V					2,4,8	18.5 mm	.3 ns
UPD48576118FF-E25-DW1-A	Renesas Electronics	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	872 mA	33554432 words	2,4,8		SEPARATE	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	32MX18	32M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp	2,4,8	18.5 mm	.2 ns
RMHE41A364AGBG-120#AC0	Renesas Electronics	DDR3 DRAM	OTHER	180	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		33554432 words	4	YES	COMMON			36	GRID ARRAY	BGA180,10X18,40		1 mm			32MX36	32M			BOTTOM	1	R-PBGA-B180	3	1.605 V	1.35 mm	800 MHz	14 mm		1181116006 bit	1.395 V	AUTO/SELF REFRESH					4	18.5 mm
RMHE41A184AGBG-120#AC0	Renesas Electronics	DDR3 DRAM	OTHER	180	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		67108864 words	4	YES	COMMON			18	GRID ARRAY	BGA180,10X18,40		1 mm			64MX18	64M			BOTTOM	1	R-PBGA-B180	3	1.605 V	1.35 mm	800 MHz	14 mm		1181116006 bit	1.395 V	AUTO/SELF REFRESH					4	18.5 mm
UPD48288118AFF-E24-DW1	Renesas Electronics	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		16777216 words			SEPARATE	1.8	1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	16MX18	16M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V		NOT SPECIFIED	NOT SPECIFIED		2,4,8	18.5 mm	.3 ns
UPD48576209F1-E24-DW1-A	Renesas Electronics	SYNCHRONOUS DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	371 mA	67108864 words	2,4,8	NO	COMMON	1.8		9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32		1 mm	95 Cel		64MX9	64M	0 Cel	TIN BISMUTH	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	400 MHz	11 mm		603979776 bit	1.7 V	AUTO REFRESH, TERM PITCH-MAX	e6			.215 Amp	2,4,8	18.5 mm
RMHE41A184AGBG-150#AC0	Renesas Electronics	DDR3 DRAM	OTHER	180	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		67108864 words	4	YES	COMMON			18	GRID ARRAY	BGA180,10X18,40		1 mm			64MX18	64M			BOTTOM	1	R-PBGA-B180		1.605 V	1.35 mm	667 MHz	14 mm		1181116006 bit	1.395 V	AUTO/SELF REFRESH					4	18.5 mm
UPD48288118AFF-E25-DW1	Renesas Electronics	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		16777216 words			SEPARATE	1.8	1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	16MX18	16M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V					2,4,8	18.5 mm	.3 ns
UPD48576236F1-E24-DW1-A	Renesas Electronics	SYNCHRONOUS DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	409 mA	16777216 words	2,4,8	NO	COMMON	1.8		36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32		1 mm	95 Cel		16MX36	16M	0 Cel	TIN BISMUTH	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	400 MHz	11 mm		603979776 bit	1.7 V	AUTO REFRESH, TERM PITCH-MAX	e6			.215 Amp	2,4,8	18.5 mm
UPD48576109FF-E25-DW1-A	Renesas Electronics	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	872 mA	67108864 words	2,4,8		SEPARATE	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	64MX9	64M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp	2,4,8	18.5 mm	.2 ns
UPD48288109AFF-E33-DW1	Renesas Electronics	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		33554432 words			SEPARATE	1.8	1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	32MX9	32M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	300 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V					2,4,8	18.5 mm
UPD48288109AFF-E33-DW1-A	Renesas Electronics	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		33554432 words			SEPARATE	1.8	1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	32MX9	32M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	300 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V					2,4,8	18.5 mm
UPD48576109FF-E18-DW1-A	Renesas Electronics	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	1078 mA	67108864 words	2,4,8		SEPARATE	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	64MX9	64M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	533 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp	2,4,8	18.5 mm	.12 ns
UPD48288109AFF-E25-DW1	Renesas Electronics	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		33554432 words			SEPARATE	1.8	1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	32MX9	32M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V					2,4,8	18.5 mm
UPD48576118FF-E24-DW1-A	Renesas Electronics	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	872 mA	33554432 words	2,4,8		SEPARATE	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	32MX18	32M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp	2,4,8	18.5 mm	.2 ns
UPD48576118FF-E33-DW1	Renesas Electronics	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	716 mA	33554432 words	2,4,8		SEPARATE	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	32MX18	32M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	300 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp	2,4,8	18.5 mm	.25 ns
UPD48288118AFF-E33-DW1	Renesas Electronics	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		16777216 words			SEPARATE	1.8	1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	16MX18	16M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	300 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V					2,4,8	18.5 mm	.35 ns
UPD48576109FF-E24-DW1	Renesas Electronics	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	872 mA	67108864 words	2,4,8		SEPARATE	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	64MX9	64M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp	2,4,8	18.5 mm	.2 ns
UPD488170VN-A50-9	Renesas Electronics	RAMBUS DRAM	OTHER	32		1024		PLASTIC/EPOXY		YES		CMOS					2097152 words			COMMON	3.3	3.3	9		SMSIP32,25	DRAMs	2.54 mm	100 Cel	3-STATE	2MX9	2M	0 Cel	Tin/Lead (Sn/Pb)	SINGLE						250 MHz		Not Qualified	18874368 bit			e0
RMHE41A364AGBG-150#AC0	Renesas Electronics	DDR3 DRAM	OTHER	180	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		33554432 words	4	YES	COMMON			36	GRID ARRAY	BGA180,10X18,40		1 mm			32MX36	32M			BOTTOM	1	R-PBGA-B180		1.605 V	1.35 mm	667 MHz	14 mm		1181116006 bit	1.395 V	AUTO/SELF REFRESH					4	18.5 mm
UPD48288118AFF-E18-DW1-A	Renesas Electronics	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		16777216 words			SEPARATE	1.8	1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	16MX18	16M	0 Cel	TIN BISMUTH	BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	533 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V	e6				2,4,8	18.5 mm	.22 ns
UPD48288109AFF-E24-DW1	Renesas Electronics	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		33554432 words			SEPARATE	1.8	1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	32MX9	32M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V		NOT SPECIFIED	NOT SPECIFIED		2,4,8	18.5 mm
UPD48576109FF-E33-DW1-A	Renesas Electronics	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	716 mA	67108864 words	2,4,8		SEPARATE	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	64MX9	64M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	300 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp	2,4,8	18.5 mm	.25 ns
UPD48288118AFF-E24-DW1-A	Renesas Electronics	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		16777216 words			SEPARATE	1.8	1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	16MX18	16M	0 Cel	TIN BISMUTH	BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V	e6				2,4,8	18.5 mm	.3 ns
UPD48288109AFF-E24-DW1-A	Renesas Electronics	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		33554432 words			SEPARATE	1.8	1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	32MX9	32M	0 Cel	TIN BISMUTH	BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V	e6				2,4,8	18.5 mm
UPD48576218F1-E18-DW1-A	Renesas Electronics	SYNCHRONOUS DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	439 mA	33554432 words	2,4,8	NO	COMMON	1.8		18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32		1 mm	95 Cel		32MX18	32M	0 Cel	TIN BISMUTH	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	533 MHz	11 mm		603979776 bit	1.7 V	AUTO REFRESH, TERM PITCH-MAX	e6			.25 Amp	2,4,8	18.5 mm
UPD48288118AFF-E18-DW1	Renesas Electronics	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		16777216 words			SEPARATE	1.8	1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	16MX18	16M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	533 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V		NOT SPECIFIED	NOT SPECIFIED		2,4,8	18.5 mm	.22 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.