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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
8201001EX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-GDIP-T16		5.5 V					65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							150 ns
M38510/24604BEA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			262144 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb) - hot dipped	DUAL		R-XDIP-T16						Not Qualified	262144 bit			e0						150 ns
M38510/24401BEX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	UNSPECIFIED		NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-XDIP-T16		5.5 V				Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH							150 ns
M65KG512AB6W9	STMicroelectronics	DDR1 DRAM	OTHER		DIE	8192	UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	180 mA	33554432 words	2,4,8,16	YES	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	DRAMs		105 Cel	3-STATE	32MX16	32M	-30 Cel		UPPER	1	X-XUUC-N	1	1.9 V		166 MHz		Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH				.00001 Amp	2,4,8,16		5 ns
M65KG512AB6W8	STMicroelectronics	DDR1 DRAM	OTHER			8192		PLASTIC/EPOXY				CMOS				180 mA	33554432 words	2,4,8,16		COMMON	1.8	1.8	16		WAFER	DRAMs		85 Cel	3-STATE	32MX16	32M	-30 Cel								166 MHz		Not Qualified	536870912 bit						.00001 Amp	2,4,8,16		5 ns
M38510/24403BEX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	UNSPECIFIED		NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-XDIP-T16		5.5 V				Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH							200 ns
M38510/24005BEA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS	MIL-M-38510 Class B	THROUGH-HOLE	ASYNCHRONOUS		16384 words				5		1	IN-LINE				110 Cel		16KX1	16K	-55 Cel		DUAL	1	R-XDIP-T16		5.5 V				Not Qualified	16384 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							250 ns
M65KG512AB85T	STMicroelectronics	DDR1 DRAM	OTHER		DIE		UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS		33554432 words		YES		1.8		16	UNCASED CHIP				85 Cel		32MX16	32M	-25 Cel		UPPER	1	X-XUUC-N		1.9 V				Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH							6 ns
M38510/24403BEA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	UNSPECIFIED		NO	1	NMOS	MIL-M-38510 Class B	THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-XDIP-T16		5.5 V				Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH							200 ns
8201007EX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-GDIP-T16		5.5 V					65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							200 ns
8201006EX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-GDIP-T16		5.5 V					65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							150 ns
M38510/24004BEA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS	MIL-M-38510 Class B	THROUGH-HOLE	ASYNCHRONOUS		16384 words				5		1	IN-LINE				110 Cel		16KX1	16K	-55 Cel		DUAL	1	R-XDIP-T16		5.5 V				Not Qualified	16384 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							200 ns
M65KA512AB8W3	STMicroelectronics	SYNCHRONOUS DRAM	OTHER			8192						CMOS				85 mA	33554432 words	1,2,4,8,FP		COMMON	1.8	1.8	16		WAFER	DRAMs		85 Cel	3-STATE	32MX16	32M	-30 Cel								133 MHz		Not Qualified	536870912 bit						.00001 Amp	1,2,4,8		6 ns
8201001EA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-GDIP-T16		5.5 V					65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							150 ns
HYB18T1G800AF-3.7	Infineon Technologies	DDR2 DRAM	OTHER	68	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68		1.9 V	1.2 mm	267 MHz	10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	20 mm	.5 ns
HYB18T1G800AFL-3S	Infineon Technologies	DDR2 DRAM	OTHER	68	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B68		1.9 V			10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH						20 mm	.45 ns
HYB18T256800AF-3	Infineon Technologies	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	145 mA	33554432 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX8	32M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	333 MHz	10 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	4,8	10.5 mm	.45 ns
HYE18M512160BF-6	Infineon Technologies	DDR1 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL		110 mA	33554432 words	2,4,8,16		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM		R-PBGA-B60				166 MHz		Not Qualified	536870912 bit						.0007 Amp	2,4,8,16		5.5 ns
HYB18T256400AC-5	Infineon Technologies	DDR2 DRAM	OTHER	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		4	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		64MX4	64M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V			10 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			10.5 mm	.6 ns
HYE18L256160BCL-7.5	Infineon Technologies	SYNCHRONOUS DRAM	OTHER	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8		16	GRID ARRAY, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54		1.95 V			8 mm	Not Qualified	268435456 bit	1.65 V	AUTO/SELF REFRESH						12 mm	5.4 ns
HYB18T512160AC-5	Infineon Technologies	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	200 MHz	10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e0			.004 Amp	4,8	12.5 mm	.6 ns
HYB18T512160AF-3.7	Infineon Technologies	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	267 MHz	10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.004 Amp	4,8	12.5 mm	.5 ns
HYB18T512160AC-3	Infineon Technologies	DDR2 DRAM	OTHER	84	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		32MX16	32M	0 Cel		BOTTOM	1	R-PBGA-B84		1.9 V			10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			12.5 mm	.45 ns
HYB18T256800AC-3	Infineon Technologies	DDR2 DRAM	OTHER	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8		8	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		32MX8	32M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V			10 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			10.5 mm	.45 ns
HYB18H256321AF-14	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words		YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	0 Cel		BOTTOM	1	R-PBGA-B136		2.1 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH						14 mm	.25 ns
HYB18T256321F-22	Infineon Technologies	DDR3 DRAM	OTHER	144	TFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words		YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144		2.1 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH	e1					11 mm	.45 ns
HYB18H512321AFL14	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136		1.9 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					14 mm	.25 ns
HYB18T1G800AFL-3.7	Infineon Technologies	DDR2 DRAM	OTHER	68	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B68		1.9 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			20 mm	.5 ns
HYE25L128800AC-8	Infineon Technologies	SYNCHRONOUS DRAM	OTHER	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		2.5		8	GRID ARRAY, FINE PITCH			.8 mm	85 Cel		16MX8	16M	-25 Cel		BOTTOM	1	R-PBGA-B54		2.7 V			8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			9 mm	6 ns
HYB18T1G400AFL-3.7	Infineon Technologies	DDR2 DRAM	OTHER	68	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B68		1.9 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			20 mm	.5 ns
HYB18T1G160AF-5	Infineon Technologies	DDR2 DRAM	OTHER	92	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	255 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,9X21,32	DRAMs	.8 mm	95 Cel	3-STATE	64MX16	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B92		1.9 V	1.2 mm	200 MHz	10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.005 Amp	4,8	20 mm	.6 ns
HYB18T256400AC-3.7	Infineon Technologies	DDR2 DRAM	OTHER	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		4	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		64MX4	64M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V			10 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			10.5 mm	.5 ns
HYB18T256324F-22	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	OTHER	144	TFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words		YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	0 Cel		BOTTOM	1	S-PBGA-B144		2.1 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH						11 mm	.45 ns
HYB18H512321AF-14	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	0 Cel		BOTTOM	1	R-PBGA-B136		2.1 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.9 V	AUTO/SELF REFRESH						14 mm	.25 ns
HYB18H256321AFL14	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136		1.9 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1					14 mm	.25 ns
HYE18M512160AF-7.5	Infineon Technologies	DDR1 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL		90 mA	33554432 words	2,4,8,16		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM		R-PBGA-B60				133 MHz		Not Qualified	536870912 bit						.0005 Amp	2,4,8,16		6.5 ns
HYE18L256160BFL-7.5	Infineon Technologies	SYNCHRONOUS DRAM	OTHER	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8		16	GRID ARRAY, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54		1.95 V			8 mm	Not Qualified	268435456 bit	1.65 V	AUTO/SELF REFRESH	e1					12 mm	5.4 ns
HYE18L128160BF-7.5	Infineon Technologies	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	90 mA	8388608 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54		1.95 V		133 MHz	8 mm	Not Qualified	134217728 bit	1.65 V	AUTO/SELF REFRESH	e1			.00035 Amp	1,2,4,8	12 mm	5.4 ns
HYB18T256321F-20	Infineon Technologies	DDR3 DRAM	OTHER	144	TFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words		YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144		2.1 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH	e1					11 mm	.4 ns
HYB18T1G400AFL-3S	Infineon Technologies	DDR2 DRAM	OTHER	68	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B68		1.9 V			10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH						20 mm	.45 ns
HYB18T512400AC-3	Infineon Technologies	DDR2 DRAM	OTHER	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		4	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		128MX4	128M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V			10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			10.5 mm	.45 ns
HYB18T256800AF-5	Infineon Technologies	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	125 mA	33554432 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX8	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	200 MHz	10 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1			.004 Amp	4,8	10.5 mm	.6 ns
HYB18T1G800AFL-3	Infineon Technologies	DDR2 DRAM	OTHER	68	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B68		1.9 V			10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			20 mm	.45 ns
HYB18T512400AF-3	Infineon Technologies	DDR2 DRAM	OTHER	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					10.5 mm	.45 ns
HYB18T1G160AF-3S	Infineon Technologies	DDR2 DRAM	OTHER	92	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B92		1.9 V			10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH						20 mm	.45 ns
HYE25L256160AF-7.5	Infineon Technologies	SYNCHRONOUS DRAM	OTHER	54	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	155 mA	16777216 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/3.3,2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54		3.6 V	1.2 mm	133 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1			.0006 Amp	1,2,4,8	12 mm	7.5 ns
HYB18H256321AFL20	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136		1.9 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1					14 mm	.35 ns
HYB18T512160AC-3.7	Infineon Technologies	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	267 MHz	10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e0			.004 Amp	4,8	12.5 mm	.5 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.