OTHER DRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT41K512M8RH-125IT:E	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	220 mA	536870912 words	8	YES	COMMON	1.35	1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	95 Cel	3-STATE	512MX8	512M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm	800 MHz	9 mm	Not Qualified	4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1			.016 Amp	8	10.5 mm
MT46H128M16LFB7-6WT:B	Micron Technology	DDR1 DRAM	OTHER	60	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	115 mA	134217728 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M		-20 Cel		BOTTOM	1	S-PBGA-B60		1.95 V	1 mm	166 MHz	10 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH				.00001 Amp	2,4,8,16	10 mm	5 ns
MT46H64M32LFBQ-48WT:C	Micron Technology	LPDDR1 DRAM	OTHER	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	90 mA	67108864 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX32	64M		-25 Cel		BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	208 MHz	8 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH		30	260	.00001 Amp	2,4,8,16	13 mm	5 ns
MT46H64M32LFMA-5WT:B	Micron Technology	DDR1 DRAM	OTHER	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	67108864 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	64MX32	64M		-20 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168		1.95 V	.7 mm	200 MHz	12 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	12 mm	5 ns
MT47H128M8CF-25:H	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	210 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	10 mm	.4 ns
MT47H128M8CF-25E:H	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	210 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260		4,8	10 mm	.4 ns
MT47H128M8CF-25E:HTR	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX8	128M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		8 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1					10 mm	.4 ns
MT47H32M16HR-25E:G	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	215 mA	33554432 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.007 Amp	4,8	12.5 mm	.4 ns
MT47H64M16HR-3L:G	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	350 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	333 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.007 Amp	4,8	12.5 mm	.45 ns
MT61K512M32KPA-14:B	Micron Technology	GDDR6 DRAM	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES	COMMON	1.25		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA180,14X18,30		.75 mm	95 Cel		512MX32	512M		0 Cel		BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm		17179869184 bit	1.2125 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V						14 mm
MTA16ATF2G64AZ-3G2J1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2		64	MICROELECTRONIC ASSEMBLY				95 Cel		2GX64	2G	1.14 V	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm	1612 MHz	3.9 mm		137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED		8	133.35 mm
MTA18ASF2G72HZ-2G6E1	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1881 mA	2147483648 words	4,8	YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY				95 Cel	3-STATE	2GX72	2G		0 Cel		DUAL	1	R-XDMA-N260		1.26 V	30.15 mm	1333 MHz	3.7 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				.45 Amp	4,8	69.6 mm
MTA18ASF2G72PZ-2G9E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	3870 mA	2147483648 words	8	YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY	DIMM288,33			95 Cel	OPEN-DRAIN	2GX72	2G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm	1466 MHz	3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				.396 Amp	8	133.35 mm
MTA36ASF2G72PZ-2G3B1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel		2GX72	2G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA36ASF8G72PZ-3G2B2	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		8589934592 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				95 Cel		8GX72	8G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		618475290624 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA8ATF1G64HZ-2G3B1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel		1GX72	1G		0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		3.7 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm
MTA8ATF2G64HZ-3G2E2	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1480 mA	2147483648 words		YES	COMMON	1.2		64	MICROELECTRONIC ASSEMBLY	DIMM260,20		.5 mm	95 Cel		2GX64	2G		0 Cel		DUAL	1	R-XDMA-N260			30.15 mm	1600 MHz	3.7 mm		137438953472 bit		AUTO/SELF REFRESH; WD-MAX				.304 Amp		69.6 mm
MTA9ASF1G72PZ-2G6D1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY			.6 mm	85 Cel		1GX72	1G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED			133.35 mm
SMJ4464-12FVS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS		NO LEAD	ASYNCHRONOUS		65536 words				5		4	CHIP CARRIER			1.27 mm	110 Cel	3-STATE	64KX4	64K		-55 Cel		QUAD	1	R-CQCC-N18		5.5 V	2.18 mm		7.24 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						12.32 mm	120 ns
5962-01-263-9398	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			65536 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	100 Cel	3-STATE	64KX1	64K		-55 Cel		DUAL		R-XDIP-T16						Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED				120 ns
5962-01-231-3789	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	38535Q/M;38534H;883B	NO LEAD			65536 words			SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	100 Cel	3-STATE	64KX1	64K		-55 Cel		QUAD		R-XQCC-N18						Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED				150 ns
5962-01-168-5239	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			65536 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	100 Cel	3-STATE	64KX1	64K		-55 Cel		DUAL		R-XDIP-T16						Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED				150 ns
5962-01-407-9554	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			262144 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	110 Cel	3-STATE	256KX1	256K		-55 Cel		DUAL		R-XDIP-T16						Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED				120 ns
SMJ4464-15FVS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS		NO LEAD	ASYNCHRONOUS		65536 words				5		4	CHIP CARRIER			1.27 mm	110 Cel	3-STATE	64KX4	64K		-55 Cel		QUAD	1	R-CQCC-N18		5.5 V	2.18 mm		7.24 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						12.32 mm	150 ns
SMJ4161-15JDS	Texas Instruments	VIDEO DRAM	OTHER	20	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS	100 mA	65536 words				5		1	IN-LINE	DIP20,.3	Other Memory ICs	2.54 mm	100 Cel	3-STATE	64KX1	64K		-55 Cel		DUAL	2	R-CDIP-T20		5.25 V	4.45 mm		7.62 mm	Not Qualified	65536 bit	4.75 V	RAS ONLY REFRESH; 256 X 1 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.025 Amp			150 ns
SMJ4416-12FGS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		16384 words			COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	100 Cel	3-STATE	16KX4	16K		-55 Cel		QUAD	1	R-CQCC-N18		5.5 V	1.85 mm		7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED			10.795 mm	120 ns
5962-01-321-0149	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			65536 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	100 Cel	3-STATE	64KX1	64K		-55 Cel		DUAL		R-XDIP-T16						Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED				200 ns
5962-01-266-1459	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	38535Q/M;38534H;883B	NO LEAD			262144 words			SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	110 Cel	3-STATE	256KX1	256K		-55 Cel		QUAD		R-XQCC-N18						Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED				120 ns
SMJ4164-12FGS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		65536 words			SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	110 Cel	3-STATE	64KX1	64K		-55 Cel		QUAD	1	R-CQCC-N18		5.5 V	2.18 mm		7.24 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED			12.32 mm	120 ns
SMC4060JR	Texas Instruments		OTHER	22	DIP	64	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE		80 mA	4096 words			SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	85 Cel	3-STATE	4KX1	4K		-55 Cel		DUAL		R-XDIP-T22						Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				300 ns
SMJ4256-20FVS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		262144 words			SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	110 Cel	3-STATE	256KX1	256K		-55 Cel		QUAD	1	R-CQCC-N18		5.25 V	2.18 mm		7.24 mm	Not Qualified	262144 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED			12.32 mm	200 ns
TMS4050JR	Texas Instruments		OTHER	18	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		80 mA	4096 words			COMMON			1	IN-LINE	DIP18,.3	Other Memory ICs	2.54 mm	85 Cel	OPEN-DRAIN	4KX1	4K		-55 Cel		DUAL		R-XDIP-T18						Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				300 ns
5962-01-263-9396	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			65536 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	100 Cel	3-STATE	64KX1	64K		-55 Cel		DUAL		R-XDIP-T16						Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED				200 ns
SM4256-15JDS	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			262144 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	100 Cel	3-STATE	256KX1	256K		-55 Cel		DUAL		R-XDIP-T16						Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED				150 ns
SM4256-20JDS	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			262144 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	100 Cel	3-STATE	256KX1	256K		-55 Cel		DUAL		R-XDIP-T16						Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED				200 ns
5962-01-263-9895	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			65536 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	100 Cel	3-STATE	64KX1	64K		-55 Cel		DUAL		R-XDIP-T16						Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED				150 ns
5962-01-263-9395	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	38535Q/M;38534H;883B	NO LEAD			65536 words			SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	100 Cel	3-STATE	64KX1	64K		-55 Cel		QUAD		R-XQCC-N18						Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED				150 ns
5962-01-265-8175	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			262144 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	100 Cel	3-STATE	256KX1	256K		-55 Cel		DUAL		R-XDIP-T16						Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED				150 ns
SMJ4161-20JDS	Texas Instruments	VIDEO DRAM	OTHER	20	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS	100 mA	65536 words				5		1	IN-LINE	DIP20,.3	Other Memory ICs	2.54 mm	100 Cel	3-STATE	64KX1	64K		-55 Cel		DUAL	2	R-CDIP-T20		5.25 V	4.45 mm		7.62 mm	Not Qualified	65536 bit	4.75 V	RAS ONLY REFRESH; 256 X 1 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.025 Amp			200 ns
SMJ4164-20JDS	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		65536 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	110 Cel	3-STATE	64KX1	64K		-55 Cel		DUAL	1	R-CDIP-T16		5.5 V	5.08 mm		7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED				200 ns
8201008EX	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		1	IN-LINE				110 Cel		64KX1	64K		-55 Cel		DUAL	1	R-GDIP-T16		5.5 V				Not Qualified	65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							120 ns
SMC4030JR	Texas Instruments		OTHER	22	DIP	64	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE		80 mA	4096 words			SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	85 Cel	3-STATE	4KX1	4K		-55 Cel		DUAL		R-XDIP-T22						Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				300 ns
5962-01-341-2450	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			262144 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	110 Cel	3-STATE	256KX1	256K		-55 Cel		DUAL		R-XDIP-T16						Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED				120 ns
SMJ4164-12JDS	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		65536 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	110 Cel	3-STATE	64KX1	64K		-55 Cel		DUAL	1	R-CDIP-T16		5.5 V	5.08 mm		7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED				120 ns
TMS1103NC	Texas Instruments		OTHER	18	DIP	32	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			1024 words			SEPARATE			1	IN-LINE	DIP18,.3	Other Memory ICs	2.54 mm	70 Cel		1KX1	1K		-25 Cel		DUAL		R-PDIP-T18						Not Qualified	1024 bit				NOT SPECIFIED	NOT SPECIFIED				300 ns
SMJ4256-15JDS	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		262144 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	110 Cel	3-STATE	256KX1	256K		-55 Cel		DUAL	1	R-CDIP-T16		5.25 V	5.08 mm		7.62 mm	Not Qualified	262144 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED				150 ns
SMJ4164-20FGS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		65536 words			SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	110 Cel	3-STATE	64KX1	64K		-55 Cel		QUAD	1	R-CQCC-N18		5.5 V	2.18 mm		7.24 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED			12.32 mm	200 ns
TMS4030JR	Texas Instruments		OTHER	22	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		80 mA	4096 words			SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	85 Cel	3-STATE	4KX1	4K		-55 Cel		DUAL		R-XDIP-T22						Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				300 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.