OTHER DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
UPD48576236F1-E18-DW1-A	Renesas Electronics	SYNCHRONOUS DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	488 mA	16777216 words	2,4,8	NO	COMMON	1.8		36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32		1 mm	95 Cel		16MX36	16M	0 Cel	TIN BISMUTH	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	533 MHz	11 mm		603979776 bit	1.7 V	AUTO REFRESH, TERM PITCH-MAX	e6			.25 Amp	2,4,8	18.5 mm
UPD48288109AFF-E25-DW1-A	Renesas Electronics	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		33554432 words			SEPARATE	1.8	1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	32MX9	32M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V					2,4,8	18.5 mm
UPD488170VN-A40-9	Renesas Electronics	RAMBUS DRAM	OTHER	32		1024		PLASTIC/EPOXY		YES		CMOS					2097152 words			COMMON	3.3	3.3	9		SMSIP32,25	DRAMs	2.54 mm	100 Cel	3-STATE	2MX9	2M	0 Cel	Tin/Lead (Sn/Pb)	SINGLE						200 MHz		Not Qualified	18874368 bit			e0
UPD48576118FF-E18-DW1-A	Renesas Electronics	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	1078 mA	33554432 words	2,4,8		SEPARATE	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	32MX18	32M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	533 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp	2,4,8	18.5 mm	.12 ns
UPD48576109FF-E24-DW1-A	Renesas Electronics	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	872 mA	67108864 words	2,4,8		SEPARATE	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	64MX9	64M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp	2,4,8	18.5 mm	.2 ns
UPD48288109AFF-E18-DW1-A	Renesas Electronics	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		33554432 words			SEPARATE	1.8	1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	32MX9	32M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	533 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V					2,4,8	18.5 mm
UPD48576109FF-E25-DW1	Renesas Electronics	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	872 mA	67108864 words	2,4,8		SEPARATE	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	64MX9	64M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp	2,4,8	18.5 mm	.2 ns
UPD48288109AFF-E18-DW1	Renesas Electronics	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		33554432 words			SEPARATE	1.8	1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	32MX9	32M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	533 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V					2,4,8	18.5 mm
UPD48576109FF-E33-DW1	Renesas Electronics	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	716 mA	67108864 words	2,4,8		SEPARATE	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	64MX9	64M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	300 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp	2,4,8	18.5 mm	.25 ns
UPD48576118FF-E33-DW1-A	Renesas Electronics	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	716 mA	33554432 words	2,4,8		SEPARATE	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	32MX18	32M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	300 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp	2,4,8	18.5 mm	.25 ns
UPD48576109FF-E18-DW1	Renesas Electronics	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	1078 mA	67108864 words	2,4,8		SEPARATE	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	64MX9	64M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	533 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp	2,4,8	18.5 mm	.12 ns
UPD48576118FF-E25-DW1	Renesas Electronics	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	872 mA	33554432 words	2,4,8		SEPARATE	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	32MX18	32M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp	2,4,8	18.5 mm	.2 ns
UPD48576118FF-E24-DW1	Renesas Electronics	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	872 mA	33554432 words	2,4,8		SEPARATE	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	32MX18	32M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp	2,4,8	18.5 mm	.2 ns
UPD48288118AFF-E33-DW1-A	Renesas Electronics	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		16777216 words			SEPARATE	1.8	1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	16MX18	16M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	300 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V					2,4,8	18.5 mm	.35 ns
K4M51163LC-BF750	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	180 mA	33554432 words	1,2,4,8,FP	YES	COMMON	2.5	2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM	1	R-PBGA-B54	3	2.7 V	1 mm	133 MHz	10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH				.001 Amp	1,2,4,8	11.5 mm	5.4 ns
K4M511533E-YC750	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		33554432 words		YES		3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		32MX16	32M	-25 Cel		BOTTOM	1	R-PBGA-B54		3.6 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.7 V	AUTO/SELF REFRESH						11.5 mm	5.4 ns
K4M51323LE-EC1H0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		16777216 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		16MX32	16M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.4 mm		11 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm	7 ns
M393T5160DZA-CF7	Samsung	DDR2 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD		SYNCHRONOUS	7110 mA	536870912 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V		400 MHz		Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH			260	.54 Amp			.4 ns
K4T1G044QC-ZCLD5	Samsung	DDR2 DRAM	OTHER	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		11 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH						11.5 mm	.5 ns
K4S643233H-HN75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			135 mA	2097152 words	1,2,4,8,FP		COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M	-25 Cel		BOTTOM		R-PBGA-B90				133 MHz		Not Qualified	67108864 bit						.0005 Amp	1,2,4,8		6 ns
M392B1K70DM0-CF8	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD		SYNCHRONOUS	2836 mA	1073741824 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	18.9 mm	533 MHz		Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.972 Amp		133.35 mm	20 ns
K4S56323PF-FF1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			160 mA	8388608 words	1,2,4,8,FP		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B90				111 MHz		Not Qualified	268435456 bit			e0			.0003 Amp	1,2,4,8		7 ns
K4M563233G-FG7L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	160 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1 mm	133 MHz	8 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH		30	240	.001 Amp	1,2,4,8	13 mm	5.4 ns
K4M51163PC-RE1L0	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	150 mA	33554432 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B54		1.95 V	1 mm	111 MHz	10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e0			.0003 Amp	1,2,4,8	11.5 mm	7 ns
K4M28163LH-BL1LT	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL			120 mA	8388608 words	1,2,4,8,FP		COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	-25 Cel	MATTE TIN	BOTTOM		S-PBGA-B54	1			111 MHz		Not Qualified	134217728 bit			e3			.0005 Amp	1,2,4,8		7 ns
K4M283233H-FL60T	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			140 mA	4194304 words	1,2,4,8,FP		COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM		R-PBGA-B90				166 MHz		Not Qualified	134217728 bit						.0005 Amp	1,2,4,8		60 ns
K4B4G0446A-HYF8T	Samsung	DDR3L DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			145 mA	1073741824 words	8		COMMON	1.35	1.35	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	1GX4	1G	0 Cel		BOTTOM		R-PBGA-B78				533 MHz		Not Qualified	4294967296 bit					260	.015 Amp	8		.3 ns
K4M51163LC-BG1HT	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL			180 mA	33554432 words	1,2,4,8,FP		COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM		S-PBGA-B54				111 MHz		Not Qualified	536870912 bit						.001 Amp	1,2,4,8		7 ns
M395T5750CZ4-CE60	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			4000 mA	268435456 words			COMMON		1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			333 MHz		Not Qualified	19327352832 bit			e3
K4M563233E-MN800	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		8388608 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.4 mm		11 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH						13 mm	6 ns
K4S561633C-BN75	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	185 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3	3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54	3	3.6 V	1 mm	133 MHz	8.1 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH			260	.0005 Amp	1,2,4,8	15.1 mm	5.4 ns
K4M51323PC-SF900	Samsung	SYNCHRONOUS DRAM	OTHER	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	150 mA	16777216 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX32	16M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	111 MHz	11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e0			.0003 Amp	1,2,4,8	13 mm	7 ns
M393T5750EZ3-CD5	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD		SYNCHRONOUS	5060 mA	268435456 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		267 MHz		Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH			260				.5 ns
K4B2G0446E-BCK0T	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			140 mA	536870912 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel		BOTTOM		R-PBGA-B78				800 MHz		Not Qualified	2147483648 bit						.012 Amp	8		.225 ns
M391B5673DZ1-CF8	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD		SYNCHRONOUS	2970 mA	268435456 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240	3	1.575 V		533 MHz		Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH			260	.2 Amp			.3 ns
M391T2863DZ3-CCC	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD		SYNCHRONOUS	2025 mA	134217728 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V	4 mm	200 MHz	30 mm	Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.135 Amp		133.35 mm	.6 ns
K4T51163QC-ZCE6T	Samsung	DDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			300 mA	33554432 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B84	3			333 MHz		Not Qualified	536870912 bit			e1		260	.008 Amp	4,8		.45 ns
K4M28323LH-HG7LT	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			120 mA	4194304 words	1,2,4,8,FP		COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM		R-PBGA-B90				133 MHz		Not Qualified	134217728 bit						.0005 Amp	1,2,4,8		5.4 ns
K4X51323PC-7ECA	Samsung	DDR1 DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			135 mA	16777216 words	2,4,8,16		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-25 Cel	MATTE TIN	BOTTOM		R-PBGA-B90	1			111 MHz		Not Qualified	536870912 bit			e3			.0003 Amp	2,4,8,16		6 ns
K4S64163LF-RR1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	110 mA	4194304 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B54		2.7 V	1 mm	105 MHz	8 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH	e0			.0005 Amp	1,2,4,8	8 mm	7 ns
K4N56163QG-GC250	Samsung	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	400 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e0			.01 Amp	4,8	13 mm	.4 ns
K4S64323LH-FG1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			100 mA	2097152 words	1,2,4,8,FP		COMMON		1.8/2.5,2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B90				105 MHz		Not Qualified	67108864 bit			e0			.0005 Amp	1,2,4,8		7 ns
K4S64163LF-RN1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	100 mA	4194304 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B54		2.7 V	1 mm	100 MHz	8 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH	e0			.0005 Amp	1,2,4,8	8 mm	7 ns
K4T51083QG-HCCCT	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			175 mA	67108864 words	4,8		COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	64MX8	64M	0 Cel		BOTTOM		R-PBGA-B60				200 MHz		Not Qualified	536870912 bit						.0045 Amp	4,8		.6 ns
K4S561633C-BL1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	185 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3	3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54	3	3.6 V	1 mm	105 MHz	8.1 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH			260	.0005 Amp	1,2,4,8	15.1 mm	7 ns
M393B5270DH0-YH9	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD		SYNCHRONOUS	2780 mA	536870912 words		YES	COMMON	1.35	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.15 mm	667 MHz	4 mm	Not Qualified	38654705664 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY				.72 Amp		133.35 mm	.25 ns
M391T6453FG0-CD500	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			2925 mA	67108864 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	64MX72	64M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			267 MHz		Not Qualified	4831838208 bit			e3						.5 ns
K4T51043QC-ZCE7	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			250 mA	134217728 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			400 MHz		Not Qualified	536870912 bit			e3			.008 Amp	4,8		.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.