STMicroelectronics - M65KG512AB6W8

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M65KG512AB6W8 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number M65KG512AB6W8
Description DDR1 DRAM; Temperature Grade: OTHER; Refresh Cycles: 8192; Power Supplies (V): 1.8; Maximum Standby Current: .00001 Amp; Minimum Operating Temperature: -30 Cel;
Datasheet M65KG512AB6W8 Datasheet
In Stock322
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Standby Current: .00001 Amp
Organization: 32MX16
Output Characteristics: 3-STATE
Sub-Category: DRAMs
Maximum Supply Current: 180 mA
Maximum Clock Frequency (fCLK): 166 MHz
No. of Words: 33554432 words
Technology: CMOS
Maximum Operating Temperature: 85 Cel
Input/Output Type: COMMON
Memory Density: 536870912 bit
Sequential Burst Length: 2,4,8,16
Memory IC Type: DDR1 DRAM
Minimum Operating Temperature: -30 Cel
Memory Width: 16
Qualification: Not Qualified
Package Equivalence Code: WAFER
Refresh Cycles: 8192
Interleaved Burst Length: 2,4,8,16
Maximum Access Time: 5 ns
No. of Words Code: 32M
Nominal Supply Voltage / Vsup (V): 1.8
Temperature Grade: OTHER
Power Supplies (V): 1.8
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