OTHER DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
M470T2864FB3-CF7	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	836 mA	134217728 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N200		1.9 V	30.15 mm	400 MHz		Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH			260	.08 Amp		67.6 mm	.4 ns
K4M563233D-ME1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	290 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B90		3.6 V	1.45 mm	105 MHz	11 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH	e0			.0012 Amp	1,2,4,8	13 mm	7 ns
K4M513233C-DF75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		180 mA	16777216 words	1,2,4,8,FP		COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM		R-PBGA-B90				133 MHz		Not Qualified	536870912 bit						.001 Amp	1,2,4,8		5.4 ns
K4M513233C-SF75T	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		180 mA	16777216 words	1,2,4,8,FP		COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM		R-PBGA-B90				133 MHz		Not Qualified	536870912 bit						.001 Amp	1,2,4,8		5.4 ns
M470T6464EHS-LE7	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	680 mA	33554432 words		YES	COMMON	1.8	1.8	16	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	32MX16	32M	0 Cel		ZIG-ZAG	1	R-XZMA-N200	3	1.9 V	30.15 mm	400 MHz	3.8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH			260	.02 Amp		67.6 mm	.4 ns
K4S643233H-HC75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		135 mA	2097152 words	1,2,4,8,FP		COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX32	2M	-25 Cel		BOTTOM		R-PBGA-B90				133 MHz		Not Qualified	67108864 bit						.0005 Amp	1,2,4,8		6 ns
K4M563233D-EE1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	290 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	3.6 V	1.45 mm	105 MHz	11 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH			260	.0012 Amp	1,2,4,8	13 mm	7 ns
K4S643233H-FL1H0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2097152 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		2MX32	2M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH		30	240			13 mm	7 ns
K4T51163QC-ZLE6	Samsung	DDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		301 mA	33554432 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B84	1			333 MHz		Not Qualified	536870912 bit			e3			.005 Amp	4,8		.45 ns
K4S64163LH-BL75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		115 mA	4194304 words	1,2,4,8,FP		COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM		S-PBGA-B54				133 MHz		Not Qualified	67108864 bit						.0005 Amp	1,2,4,8		5.4 ns
K4T51163QI-HLE60	Samsung	DDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		185 mA	33554432 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B84	1			333 MHz		Not Qualified	536870912 bit			e3			.008 Amp	4,8		.45 ns
K4X56323PG-8ECA	Samsung	DDR1 DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		125 mA	8388608 words	2,4,8,16		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	-25 Cel		BOTTOM		R-PBGA-B90				111 MHz		Not Qualified	268435456 bit						.0003 Amp	2,4,8,16		6 ns
K4S511533F-YL75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		160 mA	33554432 words	1,2,4,8,FP		COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		S-PBGA-B54				133 MHz		Not Qualified	536870912 bit			e0			.001 Amp	1,2,4,8		5.4 ns
M391B5773DH0-YK0	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1170 mA	268435456 words		YES	COMMON	1.35	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M	0 Cel	MATTE TIN	DUAL	1	R-XDMA-N240	1	1.45 V	30.15 mm	800 MHz	4 mm	Not Qualified	19327352832 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY	e3			.09 Amp		133.35 mm	.225 ns
M395T6553GZ4-CE65	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4000 mA	67108864 words		YES	COMMON	1.5	1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N240	3	1.575 V		333 MHz		Not Qualified	4831838208 bit	1.455 V	AUTO/SELF REFRESH			260	1.015 Amp
K4S56163LF-XF75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		165 mA	16777216 words	1,2,4,8,FP		COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		S-PBGA-B54				133 MHz		Not Qualified	268435456 bit			e0			.0005 Amp	1,2,4,8		5.4 ns
K4T2G084QM-ZCE6T	Samsung	CACHE DRAM MODULE	OTHER	68	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			268435456 words	4,8		COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B68	1			333 MHz		Not Qualified	2147483648 bit			e3		260		4,8		.45 ns
K4N56163QF-ZC2A0	Samsung	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	410 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	2	1.9 V	1.2 mm	350 MHz	11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	13 mm	.45 ns
K4M64163LK-RF75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		115 mA	4194304 words	1,2,4,8,FP		COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM		S-PBGA-B54	3			133 MHz		Not Qualified	67108864 bit					240	.0005 Amp	1,2,4,8		5.4 ns
K4S56163LF-XE1H0	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54		2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		30	240			11 mm	7 ns
M378B5673FH0-CF8	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1360 mA	268435456 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	256MX64	256M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	533 MHz		Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH			260	.16 Amp		133.35 mm	20 ns
M393B5670FH0-YF8	Samsung	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	95 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.15 mm			Not Qualified	19327352832 bit	1.2825 V	AUTO/SELF REFRESH						133.35 mm	.3 ns
K4M641633K-RF1H0	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B54		3.6 V	1 mm	111 MHz	8 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH	e0			.0005 Amp	1,2,4,8	8 mm	7 ns
M395T6553CZ4-CD50	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3500 mA	67108864 words			COMMON		1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	64MX72	64M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			266 MHz		Not Qualified	4831838208 bit			e3			.97 Amp
K4M641633K-RN1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		100 mA	4194304 words	1,2,4,8,FP		COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM		S-PBGA-B54	1			111 MHz		Not Qualified	67108864 bit						.0005 Amp	1,2,4,8		7 ns
K4S641633H-RF750	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel		4MX16	4M	-25 Cel		BOTTOM	1	S-PBGA-B54		3.6 V	1 mm		8 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH		30	240			8 mm	5.4 ns
K4S56323LF-HN1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3	2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1					13 mm	7 ns
K4S643233H-HC1H0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2097152 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		2MX32	2M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	3.6 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH						13 mm	7 ns
M392B2G70BM0-CF8	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3410 mA	2147483648 words			COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	2GX72	2G	0 Cel		DUAL		R-PDMA-N240				533 MHz		Not Qualified	154618822656 bit									.3 ns
K4T51043QI-HCE6T	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		115 mA	134217728 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	1			333 MHz		Not Qualified	536870912 bit			e1		260	.008 Amp	4,8		.45 ns
M378T6453FG0-CCC	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2560 mA	67108864 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V		200 MHz		Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	230	.128 Amp			.6 ns
K4S56323LF-FL600	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		30	240			13 mm	5.4 ns
M392T6553CZA-CF7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2985 mA	67108864 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V		400 MHz		Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.4 ns
K4M56323LG-HG75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		160 mA	8388608 words	1,2,4,8,FP		COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel	MATTE TIN	BOTTOM		R-PBGA-B90	1			133 MHz		Not Qualified	268435456 bit			e3			.001 Amp	1,2,4,8		5.4 ns
K4S643233H-FG1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2097152 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		2MX32	2M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH		30	240			13 mm	7 ns
M378T3354CZ0-CCC	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V		200 MHz		Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.6 ns
K4M28163LF-BL750	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel		8MX16	8M	-25 Cel		BOTTOM	1	S-PBGA-B54	3	2.7 V	1 mm		8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						8 mm	5.4 ns
K4M28323PH-HC90	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		95 mA	4194304 words	1,2,4,8,FP		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM		R-PBGA-B90				111 MHz		Not Qualified	134217728 bit						.0003 Amp	1,2,4,8		7 ns
M393T2950BZ0-CCC	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	5570 mA	134217728 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	128MX72	128M	0 Cel	TIN SILVER COPPER	DUAL	1	R-XDMA-N240	3	1.9 V		200 MHz		Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.724 Amp			.6 ns
K4S64163LH-RL1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		100 mA	4194304 words	1,2,4,8,FP		COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		S-PBGA-B54				105 MHz		Not Qualified	67108864 bit			e0			.0005 Amp	1,2,4,8		7 ns
K4M28323LH-HG7L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	120 mA	4194304 words	1,2,4,8,FP	YES	COMMON	2.5	2.5	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	2.7 V	1 mm	133 MHz	8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH				.0005 Amp	1,2,4,8	13 mm	5.4 ns
M395T5160QZ4-CD55	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3860 mA	536870912 words		YES	COMMON	1.5	1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240	3	1.575 V				Not Qualified	38654705664 bit	1.455 V	AUTO/SELF REFRESH			260
K4N56163QF-GC330	Samsung	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	370 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	16MX16	16M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	300 MHz	11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e0				4,8	13 mm	.47 ns
K4M28323LH-HN75T	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		130 mA	4194304 words	1,2,4,8,FP		COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B90	3			133 MHz		Not Qualified	134217728 bit			e1		260	.0005 Amp	1,2,4,8		5.4 ns
M391T6553BG0-CCC	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2430 mA	67108864 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V		200 MHz		Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	230	.072 Amp			.6 ns
M395T2953CZ4-CD500/E600	Samsung	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240	2	1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH
M392B5670FH0-YF8	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3010 mA	268435456 words		YES	COMMON	1.35	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	18.9 mm	533 MHz		Not Qualified	19327352832 bit	1.2825 V	AUTO/SELF REFRESH			260	.75 Amp		133.35 mm	.3 ns
M393B4G70AM0-CF8	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	4GX72	4G	0 Cel		DUAL	1	R-XDMA-N240	2	1.575 V	30.15 mm	533 MHz		Not Qualified	309237645312 bit	1.425 V	AUTO/SELF REFRESH			260			133.5 mm	.3 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.