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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4M56163DG-BF1H0	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel		8MX16	8M	-25 Cel		BOTTOM	1	R-PBGA-B54	3	2.7 V	1 mm		8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						11 mm	7 ns
K4S563233F-FF1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		3		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH		30	240			13 mm	7 ns
K4M563233E-MC1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		290 mA	8388608 words	1,2,4,8,FP		COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B90				105 MHz		Not Qualified	268435456 bit			e0			.0012 Amp	1,2,4,8		7 ns
K4B2G1646E-BYK00	Samsung	DDR3L DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX16	128M	0 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		7.5 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						13.3 mm
K4M56323LG-FG75T	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		160 mA	8388608 words	1,2,4,8,FP		COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel		BOTTOM		R-PBGA-B90	1			133 MHz		Not Qualified	268435456 bit						.001 Amp	1,2,4,8		5.4 ns
K4T51083QG-HCF8	Samsung	CACHE DRAM MODULE	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		210 mA	67108864 words	4,8		COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	64MX8	64M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			533 MHz		Not Qualified	536870912 bit			e3		260	.008 Amp	4,8		.35 ns
M393B5173FH0-CF8	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2650 mA	536870912 words			COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL		R-PDMA-N240				533 MHz		Not Qualified	38654705664 bit					260	.93 Amp			.3 ns
K4S641633H-BG750	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel		BOTTOM	1	S-PBGA-B54	3	3.6 V	1 mm		8 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH						8 mm	5.4 ns
K4S56163LF-ZF1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		150 mA	16777216 words	1,2,4,8,FP		COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	-25 Cel		BOTTOM		S-PBGA-B54				105 MHz		Not Qualified	268435456 bit						.0005 Amp	1,2,4,8		7 ns
K4M56163PG-RE900	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	65 mA	16777216 words	1,2,4,8,FP		COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54		1.95 V	1 mm	111 MHz	8 mm	Not Qualified	268435456 bit	1.7 V	AUTO REFRESH		30	240	.00001 Amp	1,2,4,8	11 mm	7 ns
K4M28163LH-BL1L0	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	120 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	-25 Cel		BOTTOM	1	S-PBGA-B54	3	2.7 V	1 mm	111 MHz	8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH				.0005 Amp	1,2,4,8	8 mm	7 ns
K4M28323LH-FN60T	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		140 mA	4194304 words	1,2,4,8,FP		COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM		R-PBGA-B90				166 MHz		Not Qualified	134217728 bit						.0005 Amp	1,2,4,8		5.4 ns
M392T2953CZA-CD5	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3005 mA	134217728 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V		267 MHz		Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.664 Amp			.5 ns
M392B1G73BH0-CK0	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2505 mA	1073741824 words			COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G	0 Cel		DUAL		R-PDMA-N240				800 MHz		Not Qualified	77309411328 bit						.5 Amp			.225 ns
K4M563233G-FF75T	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		160 mA	8388608 words	1,2,4,8,FP		COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel		BOTTOM		R-PBGA-B90	1			133 MHz		Not Qualified	268435456 bit						.001 Amp	1,2,4,8		5.4 ns
M378T5663AZ3-CE6	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2760 mA	268435456 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	256MX64	256M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		333 MHz		Not Qualified	17179869184 bit	1.7 V	AUTO/SELF REFRESH			260	.24 Amp			.45 ns
K4S64163LF-BG75	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	115 mA	4194304 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	1	S-PBGA-B54	3	2.7 V	1 mm	133 MHz	8 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH			260	.0005 Amp	1,2,4,8	8 mm	5.4 ns
K4T51083QB-GCCC	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			67108864 words	4,8		COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	64MX8	64M	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B60	3			200 MHz		Not Qualified	536870912 bit			e0		240	.008 Amp	4,8		.6 ns
K4M28163PF-BF1L0	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54	2	1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH	e1					8 mm	7 ns
K4M64163LK-BG1HT	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		110 mA	4194304 words	1,2,4,8,FP		COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM		S-PBGA-B54				111 MHz		Not Qualified	67108864 bit						.0005 Amp	1,2,4,8		7 ns
M393T5663QZ3-CD5	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2385 mA	268435456 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		267 MHz		Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH			260				.5 ns
K4Y50044UE-JCC40	Samsung	RAMBUS DRAM	OTHER	100	TFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS	1110 mA	134217728 words		YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	128MX4	128M	0 Cel		BOTTOM	1	R-PBGA-B100		1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.04 Amp		14.5 mm	28 ns
M393T5660FBA-CF7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3838 mA	268435456 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V		400 MHz		Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH			260	.18 Amp		133.5 mm	.4 ns
K4S56163LF-ZL75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		165 mA	16777216 words	1,2,4,8,FP		COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	-25 Cel		BOTTOM		S-PBGA-B54				133 MHz		Not Qualified	268435456 bit						.0005 Amp	1,2,4,8		5.4 ns
K4T1G044QQ-HLF70	Samsung	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	245 mA	268435456 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		4,8	11 mm	.4 ns
K4M56163PG-BC1L0	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	65 mA	16777216 words	1,2,4,8,FP		COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54	3	1.95 V	1 mm	111 MHz	8 mm	Not Qualified	268435456 bit	1.7 V	AUTO REFRESH				.00001 Amp	1,2,4,8	11 mm	7 ns
K4M641633K-BL1LT	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		100 mA	4194304 words	1,2,4,8,FP		COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel	MATTE TIN	BOTTOM		S-PBGA-B54	1			111 MHz		Not Qualified	67108864 bit			e3			.0005 Amp	1,2,4,8		7 ns
K4M51323PC-SF1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		150 mA	16777216 words	1,2,4,8,FP		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM		R-PBGA-B90	1			111 MHz		Not Qualified	536870912 bit						.0003 Amp	1,2,4,8		7 ns
K4M56163DG-RF1L0	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel		8MX16	8M	-25 Cel		BOTTOM	1	R-PBGA-B54		2.7 V	1 mm		8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH		30	240			11 mm	7 ns
M393B2873GB0-YF8	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1500 mA	134217728 words		YES	COMMON	1.35	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.15 mm	533 MHz	4 mm	Not Qualified	9663676416 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX				.6 Amp		133.35 mm	.3 ns
K4M28163LF-RE1L0	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B54		2.7 V	1 mm		8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0					8 mm	7 ns
M395T6553CZ4-CE60	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4000 mA	67108864 words			COMMON		1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	64MX72	64M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			333 MHz		Not Qualified	4831838208 bit			e3			1.015 Amp
K4M281633H-BL750	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	70 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	-25 Cel		BOTTOM	1	S-PBGA-B54	3	3.6 V	1 mm	133 MHz	8 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH				.0005 Amp	1,2,4,8	8 mm	5.4 ns
K4S511533F-YF1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		150 mA	33554432 words	1,2,4,8,FP		COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		S-PBGA-B54				111 MHz		Not Qualified	536870912 bit			e0			.001 Amp	1,2,4,8		7 ns
K4S561633F-XG750	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54		3.6 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH		30	240			11 mm	5.4 ns
K4S513233C-MN1H	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	330 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B90		3.6 V	1.4 mm	100 MHz	9.5 mm	Not Qualified	536870912 bit	2.7 V	AUTO/SELF REFRESH	e0			.0015 Amp	1,2,4,8	15.5 mm	7 ns
M393T6553EZA-CF7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		400 MHz		Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH			260				.4 ns
K4S511633F-YC1L0	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		32MX16	32M	-25 Cel		BOTTOM	1	R-PBGA-B54		3.6 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.7 V	AUTO/SELF REFRESH		30	240			11.5 mm	7 ns
K4S643234E-TE600	Samsung	SYNCHRONOUS DRAM	OTHER	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		YES		2.5		32	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		2MX32	2M	-25 Cel		DUAL	1	R-PDSO-G86		3.3 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH		30	240			22.22 mm	5.5 ns
K4M281633F-RF1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		170 mA	8388608 words	1,2,4,8,FP		COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		S-PBGA-B54				105 MHz		Not Qualified	134217728 bit			e0			.0005 Amp	1,2,4,8		7 ns
K4M56163PG-RE1L0	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	65 mA	16777216 words	1,2,4,8,FP		COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54		1.95 V	1 mm	111 MHz	8 mm	Not Qualified	268435456 bit	1.7 V	AUTO REFRESH		30	240	.00001 Amp	1,2,4,8	11 mm	7 ns
K4J55323QF-GL200	Samsung	GDDR3 DRAM	OTHER	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	950 mA	8388608 words	4	YES	COMMON	1.8	2	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	0 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B144		1.9 V	1.4 mm	500 MHz	12 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e0			.13 Amp	4	12 mm	.35 ns
K4M64163LK-BL75T	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		115 mA	4194304 words	1,2,4,8,FP		COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM		S-PBGA-B54				133 MHz		Not Qualified	67108864 bit						.0005 Amp	1,2,4,8		5.4 ns
M392B5173FM0-YH9	Samsung	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				95 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.45 V				Not Qualified	38654705664 bit	1.2825 V	AUTO/SELF REFRESH							.255 ns
K4S51323LF-EC1H0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		16MX32	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3	2.7 V	1.4 mm		11 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e1					13 mm	7 ns
K4M56163LG-RL1HT	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		110 mA	16777216 words	1,2,4,8,FP		COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	-25 Cel		BOTTOM		S-PBGA-B54	1			111 MHz		Not Qualified	268435456 bit						.001 Amp	1,2,4,8		7 ns
K4Y50084UE-JCB3	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1020 mA	67108864 words			COMMON	1.8	1.8	8	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	64MX8	64M	0 Cel		BOTTOM		R-PBGA-B100	3					Not Qualified	536870912 bit					260	.04 Amp			35 ns
K4M641633K-RN75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		115 mA	4194304 words	1,2,4,8,FP		COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM		S-PBGA-B54	1			133 MHz		Not Qualified	67108864 bit						.0005 Amp	1,2,4,8		5.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.