OTHER DRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4M28163PF-BG900	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54	2	1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH	e1					8 mm	7 ns
M392B5173FM0-YF8	Samsung	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY					95 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.45 V				Not Qualified	38654705664 bit	1.2825 V	AUTO/SELF REFRESH							.3 ns
K4S51153PF-PF90	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		95 mA	33554432 words	1,2,4,8,FP		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel	MATTE TIN	BOTTOM		S-PBGA-B54	1			111 MHz		Not Qualified	536870912 bit			e3			.0006 Amp	1,2,4,8		7 ns
M392T2953EZA-CD5	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2645 mA	134217728 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	95 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240	2	1.9 V		267 MHz		Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH				.664 Amp			.5 ns
K4M51163LC-BF1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		180 mA	33554432 words	1,2,4,8,FP		COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM		S-PBGA-B54				111 MHz		Not Qualified	536870912 bit						.001 Amp	1,2,4,8		7 ns
K4T2G044QA-HCF70	Samsung	DDR2 DRAM	OTHER	68	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	350 mA	536870912 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA68,9X19,32		DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel		BOTTOM	1	R-PBGA-B68	3	1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH			260	.015 Amp	4,8	18 mm	.4 ns
K4T51043QC-ZLD60	Samsung	DDR2 DRAM	OTHER	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2	1.9 V	1.2 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					11 mm	.45 ns
K4M281633H-BG1H0	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	60 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel		BOTTOM	1	S-PBGA-B54	3	3.6 V	1 mm	111 MHz	8 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH				.0005 Amp	1,2,4,8	8 mm	7 ns
K4N56163QG-ZC22T	Samsung	GDDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		420 mA	16777216 words	4,8		COMMON	2	2	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32		DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	0 Cel		BOTTOM		R-PBGA-B84				450 MHz		Not Qualified	268435456 bit						.01 Amp	4,8		.35 ns
K4M281633H-RN1LT	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		60 mA	8388608 words	1,2,4,8,FP		COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	-25 Cel		BOTTOM		S-PBGA-B54	1			111 MHz		Not Qualified	134217728 bit						.0005 Amp	1,2,4,8		7 ns
K4S561633F-ZE1H0	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		3		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54	3	3.6 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH						11 mm	7 ns
K4N51163QC-ZC2AT	Samsung	GDDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		350 mA	33554432 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32		DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM		R-PBGA-B84				350 MHz		Not Qualified	536870912 bit					260	.01 Amp	4,8		.45 ns
M391T6553EZ3-CE6	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1620 mA	67108864 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	95 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		333 MHz		Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH			260	.072 Amp			.45 ns
K4X51323PE-7EC3	Samsung	DDR1 DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		120 mA	16777216 words	2,4,8,16		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32		DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM		R-PBGA-B90				133 MHz		Not Qualified	536870912 bit						.0003 Amp	2,4,8,16		6 ns
M470T2953BY0-CCC	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2680 mA	134217728 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	95 Cel	3-STATE	128MX64	128M	0 Cel		ZIG-ZAG	1	R-XZMA-N200	2	1.9 V		200 MHz		Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH				.128 Amp			.6 ns
K4N1G164QE-HC25T	Samsung	STATIC COLUMN DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	200 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32		DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm	400 MHz	7.5 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.01 Amp	4,8	12.5 mm	.4 ns
K4T51083QC-ZLE60	Samsung	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		DRAMs	.8 mm	85 Cel	3-STATE	64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	3	1.9 V	1.2 mm	333 MHz	10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.18 Amp	4,8	11 mm	.45 ns
M393B4G70BM0-CF8	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		Other Memory ICs	1 mm	85 Cel	3-STATE	4GX72	4G	0 Cel		DUAL	1	R-XDMA-N240	2	1.575 V	30.15 mm	533 MHz	4 mm	Not Qualified	309237645312 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm	.3 ns
K4S561633C-RL75	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	185 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3	3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B54		3.6 V	1 mm	133 MHz	8.1 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH	e0			.0005 Amp	1,2,4,8	15.1 mm	5.4 ns
M470T2953CZ0-CD6	Samsung	DDR DRAM MODULE	OTHER	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY					85 Cel		128MX64	128M	0 Cel		ZIG-ZAG	1	R-XZMA-N200		1.9 V				Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH							.45 ns
K4T1G164QM-ZCD50	Samsung	DDR2 DRAM	OTHER	92	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words				1.8		16	GRID ARRAY					95 Cel		64MX16	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B92	2	1.9 V	1.2 mm		11 mm	Not Qualified	1073741824 bit	1.7 V	AUTO REFRESH	e1					21.7 mm	.5 ns
K4S561633F-ZL750	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		3		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel		16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54	3	3.6 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH			260			11 mm	5.4 ns
K4X56323PI-8GC3T	Samsung	DDR1 DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		110 mA	8388608 words	2,4,8,16		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32		DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B90	3			133 MHz		Not Qualified	268435456 bit			e1		260	.00001 Amp	2,4,8,16		6 ns
M393B2G70QH0-CMA	Samsung	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				1 mm	85 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm		4 mm		154618822656 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
M378T6553EZS-CCC	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1440 mA	67108864 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	95 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V		200 MHz		Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.064 Amp			.6 ns
K4S511533F-YC1L0	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		3		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel		32MX16	32M	-25 Cel		BOTTOM	1	R-PBGA-B54		3.6 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.7 V	AUTO/SELF REFRESH		30	240			11.5 mm	7 ns
K4S56163LF-ZC1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		155 mA	16777216 words	1,2,4,8,FP		COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	-25 Cel		BOTTOM		S-PBGA-B54				105 MHz		Not Qualified	268435456 bit						.0005 Amp	1,2,4,8		7 ns
K4M513233E-EF75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		350 mA	16777216 words	1,2,4,8,FP		COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM		R-PBGA-B90	3			133 MHz		Not Qualified	536870912 bit					260	.0015 Amp	1,2,4,8		5.4 ns
K4S64163LF-BN15	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	80 mA	4194304 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	1	S-PBGA-B54	3	2.7 V	1 mm	66 MHz	8 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH			260	.0005 Amp	1,2,4,8	8 mm	9 ns
K4M51163PC-BG75T	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		150 mA	33554432 words	1,2,4,8,FP		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM		S-PBGA-B54	3			133 MHz		Not Qualified	536870912 bit					260	.0003 Amp	1,2,4,8		6 ns
K4M51323PC-SE900	Samsung	SYNCHRONOUS DRAM	OTHER	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	150 mA	16777216 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32		DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	111 MHz	11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e0			.0003 Amp	1,2,4,8	13 mm	7 ns
K4B2G0446C-HYK00	Samsung	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	95 Cel		512MX4	512M	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		7.5 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH						11 mm
K4N56163QG-ZC22	Samsung	GDDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		420 mA	16777216 words	4,8		COMMON	2	2	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32		DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	0 Cel		BOTTOM		R-PBGA-B84				450 MHz		Not Qualified	268435456 bit						.01 Amp	4,8		.35 ns
K4S51323LF-MF750	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	70 Cel		16MX32	16M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.4 mm		11 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm	5.4 ns
K4T1G044QA-ZCCC0	Samsung	DDR2 DRAM	OTHER	68	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA68,9X19,32		DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68	3	1.9 V	1.2 mm	200 MHz	11 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1		260		4,8	18 mm	.6 ns
K4T1G084QE-HLF70	Samsung	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	170 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY	BGA60,9X11,32		DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	7.5 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		4,8	9.5 mm	.4 ns
K4M56323LG-HF7L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	160 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	2.5	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32		DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	2.7 V	1 mm	133 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH				.001 Amp	1,2,4,8	13 mm	5.4 ns
K4M283233H-HF7LT	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		120 mA	4194304 words	1,2,4,8,FP		COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM		R-PBGA-B90				133 MHz		Not Qualified	134217728 bit						.0005 Amp	1,2,4,8		7.5 ns
K4T28163QP-BCE7	Samsung	DDR2 DRAM	OTHER	84	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		185 mA	8388608 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32		DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	0 Cel		BOTTOM		R-PBGA-B84				400 MHz		Not Qualified	134217728 bit						.008 Amp	4,8		.4 ns
K4S64163LF-BF75	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	115 mA	4194304 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	1	S-PBGA-B54	3	2.7 V	1 mm	133 MHz	8 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH			260	.0005 Amp	1,2,4,8	8 mm	5.4 ns
M392B5673GB0-CH9	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1975 mA	268435456 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	18.9 mm	667 MHz		Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.76 Amp		133.35 mm	20 ns
M392B5673FH0-YK0	Samsung	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY					95 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.45 V				Not Qualified	19327352832 bit	1.2825 V	AUTO/SELF REFRESH							.225 ns
K4S563233F-HE600	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		3		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		8MX32	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3	3.6 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH	e1					13 mm	5.4 ns
K4S64323LH-FL750	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2097152 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	70 Cel		2MX32	2M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH		30	240			13 mm	6 ns
K4S51153PF-PF75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		95 mA	33554432 words	1,2,4,8,FP		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel	MATTE TIN	BOTTOM		S-PBGA-B54	1			133 MHz		Not Qualified	536870912 bit			e3			.0006 Amp	1,2,4,8		6 ns
K4S64163LF-AR1L	Samsung	SYNCHRONOUS DRAM	OTHER	52	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	100 mA	4194304 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA52,6X13,30		DRAMs	.75 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	1	R-PBGA-B52	3	2.7 V	1 mm	105 MHz	6.6 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH			260	.0005 Amp	1,2,4,8	11 mm	7 ns
K4M56163PE-BF90	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		80 mA	16777216 words	1,2,4,8,FP		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	-25 Cel		BOTTOM		S-PBGA-B54				111 MHz		Not Qualified	268435456 bit						.0003 Amp	1,2,4,8		7 ns
K4M51323PC-DE90	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		150 mA	16777216 words	1,2,4,8,FP		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32		DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-25 Cel	MATTE TIN	BOTTOM		R-PBGA-B90	1			111 MHz		Not Qualified	536870912 bit			e3			.0003 Amp	1,2,4,8		7 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.