Infineon Technologies DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

HYB18T512800BF-3

Infineon Technologies

DDR2 DRAM

60

TFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

67108864 words

YES

1.8

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

64MX8

64M

BOTTOM

1

R-PBGA-B60

1.9 V

1.2 mm

10 mm

Not Qualified

536870912 bit

1.7 V

AUTO/SELF REFRESH

10.5 mm

.45 ns

HYS72V32300GU-8-C

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

33554432 words

YES

3.3

72

MICROELECTRONIC ASSEMBLY

70 Cel

32MX72

32M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

Not Qualified

2415919104 bit

3 V

AUTO/SELF REFRESH

6 ns

HYB3164165ATL-50

Infineon Technologies

EDO DRAM

COMMERCIAL

50

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

140 mA

4194304 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G50

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH

e0

.0002 Amp

20.95 mm

50 ns

HYB314405BJL-60

Infineon Technologies

EDO DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

60 mA

1048576 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J20

3.6 V

3.75 mm

7.75 mm

Not Qualified

4194304 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.0002 Amp

17.27 mm

60 ns

HYS72D256320HBR-7-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

268435456 words

YES

2.5

72

MICROELECTRONIC ASSEMBLY

70 Cel

256MX72

256M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

Not Qualified

19327352832 bit

2.3 V

AUTO/SELF REFRESH

.75 ns

HYS72V8220GU-10

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

775 mA

8388608 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

8MX72

8M

0 Cel

DUAL

2

R-XDMA-N168

3.6 V

100 MHz

Not Qualified

603979776 bit

3 V

.01 Amp

7 ns

HYS72V128320GR-8

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

8640 mA

134217728 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

128MX72

128M

0 Cel

DUAL

R-PDMA-N168

100 MHz

Not Qualified

9663676416 bit

.072 Amp

6 ns

HYS72D32501HR-8-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

33554432 words

YES

2.5

72

MICROELECTRONIC ASSEMBLY

70 Cel

32MX72

32M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

Not Qualified

2415919104 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.8 ns

HYM362020S-80

Infineon Technologies

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1140 mA

2097152 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX36

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

75497472 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.024 Amp

80 ns

HYM321000GS-50

Infineon Technologies

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

400 mA

1048576 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

1MX32

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

20.32 mm

Not Qualified

33554432 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.002 Amp

50 ns

HYB39S256800DTL-7.5

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

190 mA

33554432 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

32MX8

32M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

133 MHz

10.16 mm

Not Qualified

268435456 bit

3 V

AUTO/SELF REFRESH

e0

.002 Amp

1,2,4,8

22.22 mm

5.4 ns

HYM364025GS-60

Infineon Technologies

EDO DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1120 mA

4194304 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

150994944 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.008 Amp

60 ns

HYS72D32000GU-7

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

33554432 words

YES

2.5

72

MICROELECTRONIC ASSEMBLY

70 Cel

32MX72

32M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

Not Qualified

2415919104 bit

2.3 V

AUTO/SELF REFRESH

.75 ns

HYS64T64020HM-3.7-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

214

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

900 mA

67108864 words

YES

COMMON

1.8

1.8

64

MICROELECTRONIC ASSEMBLY

DIMM214,16

DRAMs

.4 mm

65 Cel

3-STATE

64MX64

64M

0 Cel

MATTE TIN

DUAL

1

R-XDMA-N214

1.9 V

267 MHz

Not Qualified

4294967296 bit

1.7 V

AUTO/SELF REFRESH

e3

.03 Amp

.5 ns

HYS72T64000GR-3-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

67108864 words

YES

1.8

72

MICROELECTRONIC ASSEMBLY

55 Cel

64MX72

64M

0 Cel

DUAL

1

R-XDMA-N240

1.9 V

Not Qualified

4831838208 bit

1.7 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.45 ns

HYS72V64300GR-8

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

4320 mA

67108864 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

64MX72

64M

0 Cel

DUAL

R-PDMA-N168

100 MHz

Not Qualified

4831838208 bit

.036 Amp

6 ns

HYB39S128400DT-7.5

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

33554432 words

YES

3.3

4

SMALL OUTLINE, THIN PROFILE

.8 mm

70 Cel

32MX4

32M

0 Cel

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

10.16 mm

Not Qualified

134217728 bit

3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

22.22 mm

5.4 ns

HYB18T1G160AC-3

Infineon Technologies

DDR2 DRAM

92

FBGA

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

67108864 words

YES

1.8

16

GRID ARRAY, FINE PITCH

.8 mm

64MX16

64M

BOTTOM

1

R-PBGA-B92

1.9 V

10 mm

Not Qualified

1073741824 bit

1.7 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

20 mm

.45 ns

HYB39V64800TL-7

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

900 mA

8388608 words

1,2,4,8,16

YES

COMMON

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

.8 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

143 MHz

10.16 mm

67108864 bit

3 V

AUTO/SELF REFRESH; LG-MAX

.0005 Amp

1,2,4,8,16

22.62 mm

5.5 ns

HYS64V32220GDL-7.5-C2

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

144

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

920 mA

33554432 words

YES

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM144,32

DRAMs

.8 mm

70 Cel

3-STATE

32MX64

32M

0 Cel

DUAL

1

R-XDMA-N144

3.6 V

133 MHz

Not Qualified

2147483648 bit

3 V

AUTO/SELF REFRESH

.008 Amp

5.4 ns

HYB514256BJ-80

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

70 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

256KX4

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

1048576 bit

e0

.001 Amp

80 ns

HYS64V32300GU-7-D

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1920 mA

33554432 words

YES

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

32MX64

32M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

133 MHz

Not Qualified

2147483648 bit

3 V

AUTO/SELF REFRESH

.016 Amp

5.4 ns

HYB39M93200Q125

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

128

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

195 mA

294912 words

COMMON

3.3

3.3

32

FLATPACK

QFP128,.67X.93,20

DRAMs

.5 mm

70 Cel

3-STATE

288KX32

288K

0 Cel

Tin/Lead (Sn/Pb)

QUAD

R-PQFP-G128

125 MHz

Not Qualified

9437184 bit

e0

.001 Amp

HYS64T32000LM-3.7-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

214

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

880 mA

33554432 words

YES

COMMON

1.8

1.8

64

MICROELECTRONIC ASSEMBLY

DIMM214,16

DRAMs

.4 mm

65 Cel

3-STATE

32MX64

32M

0 Cel

DUAL

1

R-XDMA-N214

1.9 V

266 MHz

Not Qualified

2147483648 bit

1.7 V

AUTO/SELF REFRESH

.016 Amp

.5 ns

HYS72D64320HU-5-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

67108864 words

YES

2.6

72

MICROELECTRONIC ASSEMBLY

70 Cel

64MX72

64M

0 Cel

MATTE TIN

DUAL

1

R-XDMA-N184

2.7 V

Not Qualified

4831838208 bit

2.5 V

AUTO/SELF REFRESH

e3

.6 ns

HYS64T64020HDL-5-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

200

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

67108864 words

YES

1.8

64

MICROELECTRONIC ASSEMBLY

65 Cel

64MX64

64M

0 Cel

MATTE TIN

DUAL

1

R-XDMA-N200

1.9 V

Not Qualified

4294967296 bit

1.7 V

AUTO/SELF REFRESH

e3

.6 ns

HYS72T128020HR-3-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

134217728 words

YES

1.8

72

MICROELECTRONIC ASSEMBLY

55 Cel

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N240

1.9 V

Not Qualified

9663676416 bit

1.7 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.45 ns

HYS64T128020HU-3-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

134217728 words

YES

1.8

64

MICROELECTRONIC ASSEMBLY

65 Cel

128MX64

128M

0 Cel

DUAL

1

R-XDMA-N240

1.9 V

Not Qualified

8589934592 bit

1.7 V

AUTO/SELF REFRESH

.45 ns

HYS64V16302GU-7.5-C2

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

920 mA

16777216 words

YES

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

16MX64

16M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

133 MHz

Not Qualified

1073741824 bit

3 V

AUTO/SELF REFRESH

.008 Amp

5.4 ns

HYS72D128020HR-8-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

134217728 words

YES

2.5

72

MICROELECTRONIC ASSEMBLY

70 Cel

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

Not Qualified

9663676416 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.8 ns

HYB514256AJ-80

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

70 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

256KX4

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

1048576 bit

e0

.001 Amp

80 ns

HYS64D16020GDL-7-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

200

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1300 mA

16777216 words

YES

COMMON

2.5

2.5

64

MICROELECTRONIC ASSEMBLY

DIMM200,24

DRAMs

.6 mm

70 Cel

3-STATE

16MX64

16M

0 Cel

DUAL

1

R-XDMA-N200

2.7 V

143 MHz

Not Qualified

1073741824 bit

2.3 V

AUTO/SELF REFRESH

.04 Amp

.75 ns

HYB514256A-70

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

20

DIP

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

80 mA

262144 words

COMMON

5

5

4

IN-LINE

DIP20,.3

DRAMs

2.54 mm

70 Cel

3-STATE

256KX4

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T20

Not Qualified

1048576 bit

e0

.001 Amp

70 ns

HYM361140GS-60

Infineon Technologies

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1240 mA

1048576 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX36

1M

0 Cel

SINGLE

R-PSMA-N72

31.75 mm

Not Qualified

37748736 bit

.012 Amp

60 ns

HYS64D16301HU-5-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

16777216 words

YES

2.6

64

MICROELECTRONIC ASSEMBLY

70 Cel

16MX64

16M

0 Cel

MATTE TIN

DUAL

1

R-XDMA-N184

2.7 V

Not Qualified

1073741824 bit

2.5 V

AUTO/SELF REFRESH

e3

.6 ns

HYM324020S-60

Infineon Technologies

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

880 mA

4194304 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

22.86 mm

Not Qualified

134217728 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.008 Amp

60 ns

HYB514405BJL-60

Infineon Technologies

EDO DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

110 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J20

5.5 V

3.75 mm

7.75 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.0002 Amp

17.27 mm

60 ns

HYS64D64020HBDL-8-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

200

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

67108864 words

YES

2.5

64

MICROELECTRONIC ASSEMBLY

70 Cel

64MX64

64M

0 Cel

DUAL

1

R-XDMA-N200

2.7 V

Not Qualified

4294967296 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.8 ns

HYM84500L-70

Infineon Technologies

FAST PAGE DRAM MODULE

COMMERCIAL

30

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

800 mA

4194304 words

COMMON

5

5

8

MICROELECTRONIC ASSEMBLY

SIP30

DRAMs

70 Cel

3-STATE

4MX8

4M

0 Cel

TIN LEAD

SINGLE

1

R-XSMA-T30

5.5 V

22.606 mm

Not Qualified

33554432 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.008 Amp

70 ns

HYS64V64220GU-8-A

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

210 mA

67108864 words

YES

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

64MX64

64M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

100 MHz

Not Qualified

4294967296 bit

3 V

AUTO/SELF REFRESH

.002 Amp

6 ns

HYB3165800AT-60

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

32

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

105 mA

8388608 words

NO

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

DRAMs

1.27 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G32

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.0005 Amp

20.95 mm

60 ns

HYS64D64300HU-6-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2600 mA

67108864 words

YES

COMMON

2.5

2.5

64

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

64MX64

64M

0 Cel

MATTE TIN

DUAL

1

R-XDMA-N184

2.7 V

133 MHz

Not Qualified

4294967296 bit

2.3 V

AUTO/SELF REFRESH

e3

.03 Amp

.7 ns

HYS64V2100GU-10

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

800 mA

2097152 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

2MX64

2M

0 Cel

DUAL

R-PDMA-N168

100 MHz

Not Qualified

134217728 bit

.016 Amp

8 ns

HYR1625640G-840

Infineon Technologies

RAMBUS DRAM MODULE

184

DIMM

RECTANGULAR

UNSPECIFIED

BLOCK ORIENTED PROTOCOL

NO

1

CMOS

NO LEAD

SYNCHRONOUS

268435456 words

YES

COMMON

2.5

1.8/2.5,2.5

16

MICROELECTRONIC ASSEMBLY

DIMM184,40

DRAMs

1 mm

3-STATE

256MX16

256M

DUAL

1

R-XDMA-N184

2.63 V

800 MHz

Not Qualified

4294967296 bit

2.37 V

SELF CONTAINED REFRESH

40 ns

HYB39S512800AT-7

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

300 mA

67108864 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

64MX8

64M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

143 MHz

10.16 mm

Not Qualified

536870912 bit

3 V

AUTO/SELF REFRESH

e0

.003 Amp

1,2,4,8

22.22 mm

5.4 ns

HYS64V64220GBDL-7-D

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

144

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1920 mA

67108864 words

YES

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM144,32

DRAMs

.8 mm

70 Cel

3-STATE

64MX64

64M

0 Cel

DUAL

1

R-XDMA-N144

3.6 V

143 MHz

Not Qualified

4294967296 bit

3 V

AUTO/SELF REFRESH

.016 Amp

5.4 ns

HYB514100BJ-50

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

120 mA

4194304 words

NO

SEPARATE

5

5

1

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J20

5.5 V

3.75 mm

7.75 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.001 Amp

17.27 mm

50 ns

HYM641020GS-70

Infineon Technologies

FAST PAGE DRAM MODULE

COMMERCIAL

168

DIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1600 mA

1048576 words

NO

COMMON

5

5

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

1MX64

1M

0 Cel

DUAL

1

R-XDMA-N168

5.5 V

25.4 mm

Not Qualified

67108864 bit

4.5 V

RAS ONLY/CAS BEFORE RAS REFRESH

.03 Amp

70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.