Infineon Technologies DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

HYM641010GS-60

Infineon Technologies

FAST PAGE DRAM MODULE

COMMERCIAL

168

DIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1760 mA

1048576 words

NO

COMMON

5

5

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

1MX64

1M

0 Cel

DUAL

1

R-XDMA-N168

5.5 V

25.4 mm

Not Qualified

67108864 bit

4.5 V

RAS ONLY/CAS BEFORE RAS REFRESH

.03 Amp

60 ns

HYB39S128400CE-8

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

33554432 words

YES

3.3

4

SMALL OUTLINE, THIN PROFILE

.8 mm

70 Cel

32MX4

32M

0 Cel

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

10.16 mm

Not Qualified

134217728 bit

3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

22.22 mm

6 ns

HYB4116-C2

Infineon Technologies

PAGE MODE DRAM

COMMERCIAL

16

DIP

128

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

16384 words

SEPARATE

+-5,12

1

IN-LINE

DIP16,.3

DRAMs

2.54 mm

70 Cel

3-STATE

16KX1

16K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T16

Not Qualified

16384 bit

e0

150 ns

HYB39S256400DEL-7.5

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

67108864 words

YES

3.3

4

SMALL OUTLINE, THIN PROFILE

.8 mm

70 Cel

64MX4

64M

0 Cel

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

10.16 mm

Not Qualified

268435456 bit

3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

22.22 mm

5.4 ns

HYB3165805BT-60

Infineon Technologies

EDO DRAM

COMMERCIAL

32

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

90 mA

8388608 words

NO

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

DRAMs

1.27 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G32

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

e0

.001 Amp

20.95 mm

60 ns

HYS64V4200GDL-8-X

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

144

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

4194304 words

YES

3.3

64

MICROELECTRONIC ASSEMBLY

70 Cel

4MX64

4M

0 Cel

ZIG-ZAG

1

R-XZMA-N144

3.6 V

Not Qualified

268435456 bit

3 V

AUTO/SELF REFRESH

6 ns

HYS64V16221GDL-8-C2

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

144

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

16777216 words

YES

3.3

64

MICROELECTRONIC ASSEMBLY

70 Cel

16MX64

16M

0 Cel

DUAL

1

R-XDMA-N144

3.6 V

Not Qualified

1073741824 bit

3 V

AUTO/SELF REFRESH

6 ns

HYS72T256220HR-3-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

268435456 words

YES

1.8

72

MICROELECTRONIC ASSEMBLY

65 Cel

256MX72

256M

0 Cel

MATTE TIN

DUAL

1

R-XDMA-N240

1.9 V

Not Qualified

19327352832 bit

1.7 V

AUTO/SELF REFRESH

e3

.45 ns

HYB5117400BT-70

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

24

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

100 mA

4194304 words

YES

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE

TSOP24/26,.36

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G24

Not Qualified

16777216 bit

e0

.001 Amp

70 ns

HYS64D32300HU-5-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

33554432 words

YES

2.6

64

MICROELECTRONIC ASSEMBLY

70 Cel

32MX64

32M

0 Cel

MATTE TIN

DUAL

1

R-XDMA-N184

2.7 V

Not Qualified

2147483648 bit

2.5 V

AUTO/SELF REFRESH

e3

.6 ns

HYB314175BJL-60

Infineon Technologies

EDO DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

105 mA

262144 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J40

3.6 V

3.68 mm

10.3 mm

Not Qualified

4194304 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH

e0

.0002 Amp

26.16 mm

60 ns

HYS72D32000GR-7-X

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

33554432 words

YES

2.5

72

MICROELECTRONIC ASSEMBLY

70 Cel

32MX72

32M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

Not Qualified

2415919104 bit

2.3 V

AUTO/SELF REFRESH

.75 ns

HYS72T128020HR-5-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

134217728 words

YES

1.8

72

MICROELECTRONIC ASSEMBLY

65 Cel

128MX72

128M

0 Cel

MATTE TIN

DUAL

1

R-XDMA-N240

1.9 V

Not Qualified

9663676416 bit

1.7 V

AUTO/SELF REFRESH

e3

.6 ns

HYS72V64500GR-7.5

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

4320 mA

67108864 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

64MX72

64M

0 Cel

DUAL

R-PDMA-N168

133 MHz

Not Qualified

4831838208 bit

.036 Amp

5.4 ns

HYS72D16500HR-8-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

16777216 words

YES

2.5

72

MICROELECTRONIC ASSEMBLY

70 Cel

16MX72

16M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

Not Qualified

1207959552 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.8 ns

HYS72T128020HFN-3S-A

Infineon Technologies

DDR DRAM MODULE

240

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

67108864 words

YES

1.8

8

MICROELECTRONIC ASSEMBLY

64MX8

64M

MATTE TIN

DUAL

1

R-XDMA-N240

1.9 V

Not Qualified

536870912 bit

1.7 V

AUTO/SELF REFRESH

e3

HYM321120S-80

Infineon Technologies

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

680 mA

1048576 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

1MX32

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

33554432 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; BYTE ACCESS; PRESENCE DETECT PINS

.008 Amp

80 ns

HYS64V4200GDL-8

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

144

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

520 mA

4194304 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM144,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX64

4M

0 Cel

DUAL

R-PDMA-N144

100 MHz

Not Qualified

268435456 bit

.004 Amp

6 ns

HYS72V128220GR-8A

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

240 mA

134217728 words

YES

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

100 MHz

Not Qualified

9663676416 bit

3 V

AUTO/SELF REFRESH

.002 Amp

6 ns

HYS72V64220GU-7.5-A

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

67108864 words

YES

3.3

72

MICROELECTRONIC ASSEMBLY

70 Cel

64MX72

64M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

Not Qualified

4831838208 bit

3 V

AUTO/SELF REFRESH

5.4 ns

HYS64D64000HU-7-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

67108864 words

YES

2.5

64

MICROELECTRONIC ASSEMBLY

70 Cel

64MX64

64M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

Not Qualified

4294967296 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.75 ns

HYS64V64220GU-8A-A

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

67108864 words

YES

3.3

64

MICROELECTRONIC ASSEMBLY

70 Cel

64MX64

64M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

Not Qualified

4294967296 bit

3 V

AUTO/SELF REFRESH

6 ns

HYB18T512400AF-3S

Infineon Technologies

DDR2 DRAM

60

TFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

134217728 words

YES

1.8

4

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

128MX4

128M

BOTTOM

1

R-PBGA-B60

1.9 V

1.2 mm

10 mm

Not Qualified

536870912 bit

1.7 V

AUTO/SELF REFRESH

10.5 mm

.45 ns

HYS72D128520GR-7-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

134217728 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

143 MHz

Not Qualified

9663676416 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.75 ns

HYS64V8301GU-7-C2

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

230 mA

8388608 words

YES

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

8MX64

8M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

133 MHz

Not Qualified

536870912 bit

3 V

AUTO/SELF REFRESH

.0015 Amp

5.4 ns

HYS72D32300HU-6-C

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1935 mA

33554432 words

YES

COMMON

2.5

2.6

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

167 MHz

Not Qualified

2415919104 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.7 ns

HYB18T256321F-20

Infineon Technologies

DDR3 DRAM

OTHER

144

TFBGA

SQUARE

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

YES

2

32

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

8MX32

8M

0 Cel

TIN SILVER COPPER

BOTTOM

1

S-PBGA-B144

2.1 V

1.2 mm

11 mm

Not Qualified

268435456 bit

1.9 V

AUTO/SELF REFRESH

e1

11 mm

.4 ns

HYB3116400BJ-60

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

90 mA

4194304 words

YES

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J24

3.6 V

3.75 mm

7.75 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.001 Amp

17.27 mm

60 ns

HYS72D64500GR-8-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

3780 mA

67108864 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

Other Memory ICs

1.27 mm

70 Cel

3-STATE

64MX72

64M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

125 MHz

Not Qualified

4831838208 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.126 Amp

.8 ns

HYM72V4045GU-60

Infineon Technologies

EDO DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1620 mA

4194304 words

NO

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

4MX72

4M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

25.4 mm

Not Qualified

301989888 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH

.018 Amp

60 ns

HYS72D128300HBR-7-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

5140 mA

134217728 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

Other Memory ICs

1.27 mm

70 Cel

3-STATE

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

133 MHz

Not Qualified

9663676416 bit

2.3 V

AUTO/SELF REFRESH

.57 Amp

.75 ns

HYS72V128321GR-7.5-C2

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

9720 mA

134217728 words

YES

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

133 MHz

Not Qualified

9663676416 bit

3 V

AUTO/SELF REFRESH

.072 Amp

5.4 ns

HYB511000BZ-80

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

20

ZIP

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

70 mA

1048576 words

SEPARATE

5

5

1

IN-LINE

ZIP20,.1

DRAMs

1.27 mm

70 Cel

3-STATE

1MX1

1M

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T20

Not Qualified

1048576 bit

e0

.001 Amp

80 ns

HYB39S256800DCL-7

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

190 mA

33554432 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA54,9X9,32

DRAMs

.8 mm

70 Cel

3-STATE

32MX8

32M

0 Cel

TIN LEAD

BOTTOM

1

R-PBGA-B54

3.6 V

1.2 mm

143 MHz

8 mm

Not Qualified

268435456 bit

3 V

AUTO/SELF REFRESH

e0

.002 Amp

1,2,4,8

12 mm

5.4 ns

HYS72V64220GU-8-C

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

67108864 words

YES

3.3

72

MICROELECTRONIC ASSEMBLY

70 Cel

64MX72

64M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

Not Qualified

4831838208 bit

3 V

AUTO/SELF REFRESH

6 ns

HYB511000AJ-60

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

1048576 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX1

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

1048576 bit

e0

60 ns

HYB39M93200L100

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

68

QCCJ

SQUARE

PLASTIC/EPOXY

YES

CMOS

J BEND

195 mA

294912 words

COMMON

3.3

3.3

32

CHIP CARRIER

LDCC68,1.0SQ

DRAMs

1.27 mm

70 Cel

3-STATE

288KX32

288K

0 Cel

Tin/Lead (Sn/Pb)

QUAD

S-PQCC-J68

100 MHz

Not Qualified

9437184 bit

e0

.001 Amp

HYS72V64300GR-7.5-D

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

4860 mA

67108864 words

YES

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

64MX72

64M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

133 MHz

Not Qualified

4831838208 bit

3 V

AUTO/SELF REFRESH

.036 Amp

5.4 ns

HYB18M512160AF-6

Infineon Technologies

DDR1 DRAM

COMMERCIAL

60

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

110 mA

33554432 words

2,4,8,16

COMMON

1.8

1.8

16

GRID ARRAY, FINE PITCH

BGA60,9X10,32

DRAMs

.8 mm

70 Cel

3-STATE

32MX16

32M

0 Cel

BOTTOM

R-PBGA-B60

166 MHz

Not Qualified

536870912 bit

.0005 Amp

2,4,8,16

5.4 ns

HYS64V32220GCDL-7.5-X

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

144

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

33554432 words

YES

3.3

64

MICROELECTRONIC ASSEMBLY

70 Cel

32MX64

32M

0 Cel

ZIG-ZAG

1

R-XZMA-N144

3.6 V

Not Qualified

2147483648 bit

3 V

AUTO/SELF REFRESH

5.4 ns

HYB39S128800DT-7

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

16777216 words

YES

3.3

8

SMALL OUTLINE, THIN PROFILE

.8 mm

70 Cel

16MX8

16M

0 Cel

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

10.16 mm

Not Qualified

134217728 bit

3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

22.22 mm

5.4 ns

HYB514100BTL-50

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

20

TSOP2

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

120 mA

4194304 words

NO

SEPARATE

5

5

1

SMALL OUTLINE, THIN PROFILE

TSSOP20/26,.36

DRAMs

1.27 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G20

5.5 V

1.2 mm

7.62 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH

e0

.0002 Amp

17.14 mm

50 ns

HYS72D128020GR-8-X

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

134217728 words

YES

2.5

72

MICROELECTRONIC ASSEMBLY

70 Cel

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

Not Qualified

9663676416 bit

2.3 V

AUTO/SELF REFRESH

.8 ns

HYB39S64800ETL-7

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

150 mA

8388608 words

1,2,4,8

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

143 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8

5.4 ns

HYB514256AZ80

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

20

ZIP

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

70 mA

262144 words

COMMON

5

5

4

IN-LINE

ZIP20,.1

DRAMs

1.27 mm

70 Cel

3-STATE

256KX4

256K

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T20

Not Qualified

1048576 bit

e0

.001 Amp

80 ns

HYS64D64020HBDL-5-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

200

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

67108864 words

YES

2.6

64

MICROELECTRONIC ASSEMBLY

70 Cel

64MX64

64M

0 Cel

DUAL

1

R-XDMA-N200

2.7 V

Not Qualified

4294967296 bit

2.5 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.6 ns

HYB511000J-10

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

60 mA

1048576 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX1

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

1048576 bit

e0

.001 Amp

100 ns

HYR1612820G-745

Infineon Technologies

RAMBUS DRAM MODULE

184

DIMM

RECTANGULAR

UNSPECIFIED

BLOCK ORIENTED PROTOCOL

NO

1

CMOS

NO LEAD

SYNCHRONOUS

134217728 words

YES

COMMON

2.5

1.8/2.5,2.5

16

MICROELECTRONIC ASSEMBLY

DIMM184,40

DRAMs

1 mm

3-STATE

128MX16

128M

DUAL

1

R-XDMA-N184

2.63 V

711 MHz

Not Qualified

2147483648 bit

2.37 V

SELF CONTAINED REFRESH

2.06 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.