Infineon Technologies DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
HYB314265BJL-45	Infineon Technologies	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	130 mA	262144 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	3.6 V	3.68 mm		10.3 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp		26.16 mm	45 ns
HYB3118160BSJ-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	200 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J42	3.6 V	3.75 mm		10.3 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		27.43 mm	50 ns
HYB18RL28818AC-5	Infineon Technologies	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.8		18	GRID ARRAY, THIN PROFILE				1 mm			16MX18	16M			BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH						18.5 mm
HYB39S256162T-8	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			16777216 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			125 MHz		Not Qualified	268435456 bit			e0			.001 Amp	1,2,4,8		5 ns
HYM368035GS-60	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1320 mA	8388608 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX36	8M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	301989888 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.024 Amp			60 ns
HYS64T32000HU-5-B	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY					65 Cel		32MX64	32M	0 Cel	MATTE TIN	DUAL	1	R-XDMA-N240	1.9 V				Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e3						.6 ns
HYM361120GS-80	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1000 mA	1048576 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	0 Cel		SINGLE		R-PSMA-N72		25.4 mm			Not Qualified	37748736 bit						.012 Amp			80 ns
HYB5116800AJ-80	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	28	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	70 mA	2097152 words		NO	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44		DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.75 mm		10.28 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; TEST MODE	e0			.001 Amp		18.54 mm	80 ns
HYB18L256160BF-7.5	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	90 mA	16777216 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54	1.95 V		133 MHz	8 mm	Not Qualified	268435456 bit	1.65 V	AUTO/SELF REFRESH	e1			.00035 Amp	1,2,4,8	12 mm	5.4 ns
HYB3164800T-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	34	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	8388608 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP34,.56		DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G34					Not Qualified	67108864 bit			e0			.0002 Amp			50 ns
HYB39S64160BTL-10	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	90 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	67108864 bit	3 V		e0			.001 Amp	1,2,4,8	22.22 mm	7 ns
HYB3117800BSJ-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	2097152 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.44		DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	3.6 V	3.75 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.002 Amp		18.54 mm	60 ns
HYB514256BL-70	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		70 mA	262144 words			COMMON	5	5	4	IN-LINE	DIP20,.3		DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20					Not Qualified	1048576 bit			e0			.0002 Amp			70 ns
HYM361140GS-70	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1120 mA	1048576 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	0 Cel		SINGLE		R-PSMA-N72		31.75 mm			Not Qualified	37748736 bit						.012 Amp			70 ns
HYB5116100AJ-80	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	70 mA	16777216 words		NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.75 mm		7.75 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; TEST MODE	e0			.001 Amp		17.27 mm	80 ns
HYS64D16001GDL-6-B	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1140 mA	16777216 words		YES	COMMON	2.5	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N200	2.7 V		166 MHz		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.7 ns
HYS72V32220GR-8	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	130 mA	33554432 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V		100 MHz		Not Qualified	2415919104 bit	3 V					.001 Amp			6 ns
HYB18T512800AC-3	Infineon Technologies	DDR2 DRAM	OTHER	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		8	GRID ARRAY, FINE PITCH				.8 mm	95 Cel		64MX8	64M	0 Cel		BOTTOM	1	R-PBGA-B60	1.9 V			10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			10.5 mm	.45 ns
HYB39S64400AT-10	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	90 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	8 ns
HYB514100AJ-70	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		100 mA	4194304 words		NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20					Not Qualified	4194304 bit			e0			.001 Amp			70 ns
HYB39S64800BTL-7	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		150 mA	8388608 words	1,2,4,8,FP		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			143 MHz		Not Qualified	67108864 bit			e0			.001 Amp	1,2,4,8		5.4 ns
HYB514400AZ-70	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		100 mA	1048576 words		NO	COMMON	5	5	4	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20					Not Qualified	4194304 bit			e0			.001 Amp			70 ns
HYB3165400AJ-40	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	155 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44		DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32	3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0009 Amp		21.08 mm	40 ns
HYB39S128160CT-7.5	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	230 mA	8388608 words	1,2,4,8	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0			.0015 Amp	1,2,4,8	22.22 mm	5.4 ns
HYM362140GS-60	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1264 mA	2097152 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	18	DRAMs	1.27 mm	70 Cel	3-STATE	2MX36	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	31.75 mm			Not Qualified	75497472 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.024 Amp			60 ns
HYB18T512400BF-3	Infineon Technologies	DDR2 DRAM		60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm			128MX4	128M			BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						10.5 mm	.45 ns
HYS64V64220GBDL-8-D	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1760 mA	67108864 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V		125 MHz		Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH				.016 Amp			6 ns
HYB39S64400T-10	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	155 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	22.22 mm	8 ns
HYS72V32300GU-8	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		210 mA	33554432 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL		R-PDMA-N168			100 MHz		Not Qualified	2415919104 bit						.002 Amp			6 ns
HYB39S16160T-12	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		125 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G50			83 MHz		Not Qualified	16777216 bit			e0			.003 Amp	1,2,4,8		10 ns
HYB18T512400BF-3.7F	Infineon Technologies	DDR2 DRAM		60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm			128MX4	128M			BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						10.5 mm	.5 ns
HYB39S64160BT-7.5	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	140 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	5.4 ns
HYB18T256160AFL-3	Infineon Technologies	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	160 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32		DRAMs	.8 mm		3-STATE	16MX16	16M			BOTTOM	1	R-PBGA-B84	1.9 V		333 MHz	10 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	4,8	12.5 mm	.45 ns
HYB39S64800CT-8	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		8MX8	8M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH						22.22 mm	6 ns
HYS72D64020HU-8-B	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					70 Cel		64MX72	64M	0 Cel	MATTE TIN	DUAL	1	R-XDMA-N184	2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	e3						.8 ns
HYB18T1G400AC-5	Infineon Technologies	DDR2 DRAM		68	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY, FINE PITCH				.8 mm			256MX4	256M			BOTTOM	1	R-PBGA-B68	1.9 V			10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			20 mm	.6 ns
HYS72T64020HR-2.5-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY					55 Cel		64MX72	64M	0 Cel	MATTE TIN	DUAL	1	R-XDMA-N240	1.9 V				Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e3						.4 ns
HYB3165165BT-60	Infineon Technologies	EDO DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	90 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		20.95 mm	60 ns
HYS72V32301GR-7.5-C	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS		33554432 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		32MX72	32M	0 Cel		DUAL	1	R-XDMA-X168	3.6 V				Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH							5.4 ns
HYS72D64320GU-5-C	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2655 mA	67108864 words		YES	COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel	MATTE TIN	DUAL	1	R-XDMA-N184	2.7 V		200 MHz		Not Qualified	4831838208 bit	2.5 V	AUTO/SELF REFRESH	e3						.6 ns
HYB39S256160CTL-7.5	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	240 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	22.22 mm	5.4 ns
HYB5116400BT-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	24	SOP	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	90 mA	4194304 words		YES	COMMON	5	5	4	SMALL OUTLINE	TSOP24/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24	5.5 V	3.75 mm		7.75 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.001 Amp		17.27 mm	60 ns
HYM91000L-80	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30		512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	630 mA	1048576 words			COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30,.2		DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30	5.5 V	20.447 mm			Not Qualified	9437184 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.009 Amp			80 ns
HYS72D256320GBR-7-B	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6170 mA	268435456 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V		133 MHz		Not Qualified	19327352832 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	1.05 Amp			.75 ns
HYB39S128160CT-8	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	210 mA	8388608 words	1,2,4,8	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0			.0015 Amp	1,2,4,8	22.22 mm	6 ns
HYB3164400AJ-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	105 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44		DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32	3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0009 Amp		21.08 mm	60 ns
HYB39S16320TQ-6	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	524288 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		DRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm	166 MHz	14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	20 mm	5.5 ns
HYB18H512321AF-20	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	2.1 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.9 V	AUTO/SELF REFRESH	e1					14 mm	.35 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.