Infineon Technologies DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
HYB514800BJL-80	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		90 mA	524288 words		YES	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44		DRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28					Not Qualified	4194304 bit			e0			.0002 Amp			80 ns
HYB4164-P4	Infineon Technologies	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			65536 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3		DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16					Not Qualified	65536 bit			e0						250 ns
HYS64V64220GU-7.5	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		270 mA	67108864 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N168			133 MHz		Not Qualified	4294967296 bit						.002 Amp			5.4 ns
HYM64V8045GU-60	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	920 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	536870912 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEELF REFRESH				.004 Amp			60 ns
HYB514256AZL-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		90 mA	262144 words			COMMON	5	5	4	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20					Not Qualified	1048576 bit			e0			.0003 Amp			60 ns
HYB3116405BTL-70	Infineon Technologies	EDO DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		80 mA	4194304 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24					Not Qualified	16777216 bit			e0			.0002 Amp			70 ns
HYB39S256400DFL-7	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		3.3		4	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel		64MX4	64M	0 Cel		BOTTOM	1	R-PBGA-B54	3.6 V	1.2 mm		8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			12 mm	5.4 ns
HYB514100BJ-80	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	85 mA	4194304 words		NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.66 mm		7.75 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; TEST MODE	e0			.001 Amp		17.27 mm	80 ns
HYB39S64400ET-7.5	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	140 mA	16777216 words	1,2,4,8	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	5.4 ns
HYB39S64400CTL-7.5	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		4	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		16MX4	16M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH						22.22 mm	5.4 ns
HYB39S64XXX0ATL-8	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		4	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		4MX4	4M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						22.22 mm	6 ns
HYR1625640G-845	Infineon Technologies	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES	COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40		DRAMs	1 mm		3-STATE	256MX16	256M			DUAL	1	R-XDMA-N184	2.63 V		800 MHz		Not Qualified	4294967296 bit	2.37 V	SELF CONTAINED REFRESH							45 ns
HYS72T64000HU-3.7-B	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY					65 Cel		64MX72	64M	0 Cel		DUAL	1	R-XDMA-N240	1.9 V				Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH							.5 ns
HYS72D64020GU-7F-B	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2520 mA	67108864 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V		143 MHz		Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH							.75 ns
HYB39S128160CE-8	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		8MX16	8M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	6 ns
HYS64V8200GU-10	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	90 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V		100 MHz		Not Qualified	536870912 bit	3 V					.001 Amp			8 ns
HYB3165800J-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	34	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	140 mA	8388608 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ34,.54		DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J34	3.6 V	3.76 mm		12.7 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp		22.25 mm	50 ns
HYB39S64400CT-7.5	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		4	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		16MX4	16M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH						22.22 mm	5.4 ns
HYB39S256400FF-7	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		3.3		4	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel		64MX4	64M	0 Cel		BOTTOM	1	R-PBGA-B54	3.6 V	1.2 mm		8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH						12 mm	5.4 ns
HYB39V64160TL-7.5	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING	SYNCHRONOUS	900 mA	4194304 words	1,2,4,8,16	YES	COMMON	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32			.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	133 MHz	10.16 mm		67108864 bit	3 V	AUTO/SELF REFRESH; LG-MAX				.0005 Amp	1,2,4,8,16	22.62 mm	5.5 ns
HYS64V8300GU-8-C	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		8MX64	8M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH							6 ns
HYM321000GS-60	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	360 mA	1048576 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	20.32 mm			Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.002 Amp			60 ns
HYB3165805BJ-50	Infineon Technologies	EDO DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44		DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32	3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V		e0			.001 Amp		21.08 mm	50 ns
HYB3164400J-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	34	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		100 mA	16777216 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ34,.54		DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J34					Not Qualified	67108864 bit			e0			.0002 Amp			60 ns
HYS64T32000LM-5-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	214	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	840 mA	33554432 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM214,16		DRAMs	.4 mm	65 Cel	3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N214	1.9 V		200 MHz		Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH				.016 Amp			.6 ns
HYB514256B-80	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		70 mA	262144 words			COMMON	5	5	4	IN-LINE	DIP20,.3		DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20					Not Qualified	1048576 bit			e0			.001 Amp			80 ns
HYB4164-P1	Infineon Technologies	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			65536 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3		DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16					Not Qualified	65536 bit			e0						120 ns
HYS64V16220GDL-7.5-C2	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		16MX64	16M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH							5.4 ns
HYS72V32300GR-7.5-D	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2430 mA	33554432 words		YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V		133 MHz		Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH				.018 Amp			5.4 ns
HYS72V16300GR-7.5-E	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2520 mA	16777216 words		YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V		133 MHz		Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH				.036 Amp			5.4 ns
HYS72V32300GU-7.5-C	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		32MX72	32M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH							5.4 ns
HYB3165165TL-60	Infineon Technologies	EDO DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		4MX16	4M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		12.7 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH						22.25 mm	60 ns
HYB3117800BSJL-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		110 mA	2097152 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.44		DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28					Not Qualified	16777216 bit			e0			.0002 Amp			60 ns
HYS64T16000HDL-2.5-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY					65 Cel		16MX64	16M	0 Cel	MATTE TIN	DUAL	1	R-XDMA-N200	1.9 V				Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e3						.4 ns
HYB18TC512800AF-3.7	Infineon Technologies	DDR2 DRAM		60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm			64MX8	64M			BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						10.5 mm	.5 ns
HYB314171BJL-70	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	85 mA	262144 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	3.6 V	3.68 mm		10.3 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.0002 Amp		26.16 mm	70 ns
HYS64V32300GU-7.5-A	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		32MX64	32M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH							5.4 ns
HYS72V32200GU-8	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	240 mA	33554432 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V		100 MHz		Not Qualified	2415919104 bit	3 V					.002 Amp			6 ns
HYB39S128160CE-7	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		8MX16	8M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	5.4 ns
HYS64V16220GDL-7	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		720 mA	16777216 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N144			133 MHz		Not Qualified	1073741824 bit						.004 Amp			5.4 ns
HYS64D32020GU-7-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2600 mA	33554432 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V		143 MHz		Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.75 ns
HYS64D128320GU-6-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3840 mA	134217728 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V		166 MHz		Not Qualified	8589934592 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.288 Amp			.7 ns
HYS72T256021HFN-3.7-A	Infineon Technologies	DDR DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY							256MX72	256M			DUAL	1	R-XDMA-N240	1.9 V				Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED
HYS64V8220GDL-8	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		520 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N144			100 MHz		Not Qualified	536870912 bit						.004 Amp			6 ns
HYB39V644402T-7.5	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING	SYNCHRONOUS	900 mA	16777216 words	1,2,4,8,16	YES	COMMON	3.3		4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32			.8 mm	70 Cel	3-STATE	16MX4	16M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	133 MHz	10.16 mm		67108864 bit	3 V	AUTO/SELF REFRESH; LG-MAX				.0005 Amp	1,2,4,8,16	22.62 mm	5.5 ns
HYB3165165BTL-60	Infineon Technologies	EDO DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	90 mA	4194304 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.0002 Amp		20.95 mm	60 ns
HYS64V4120GU-12	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1000 mA	4194304 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel		DUAL		R-PDMA-N168		29.21 mm	83 MHz		Not Qualified	268435456 bit						.032 Amp			9 ns
HYM361140S-70	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1120 mA	1048576 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	0 Cel		SINGLE		R-PSMA-N72		31.75 mm			Not Qualified	37748736 bit						.012 Amp			70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.