Infineon Technologies DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

HYB39S256400FE-7

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

67108864 words

YES

3.3

4

SMALL OUTLINE, THIN PROFILE

.8 mm

70 Cel

64MX4

64M

0 Cel

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

10.16 mm

Not Qualified

268435456 bit

3 V

AUTO/SELF REFRESH

22.22 mm

5.4 ns

HYB3164405TL-50

Infineon Technologies

EDO DRAM

COMMERCIAL

34

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

16777216 words

YES

3.3

4

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

16MX4

16M

0 Cel

DUAL

1

R-PDSO-G34

3.6 V

1.2 mm

12.7 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

22.25 mm

50 ns

HYS72D32000GU-7-X

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

33554432 words

YES

2.5

72

MICROELECTRONIC ASSEMBLY

70 Cel

32MX72

32M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

Not Qualified

2415919104 bit

2.3 V

AUTO/SELF REFRESH

.75 ns

HYB39S16160CT-6

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

50

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

DUAL BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

100 mA

1048576 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G50

3.6 V

1.2 mm

166 MHz

10.16 mm

Not Qualified

16777216 bit

3 V

AUTO/SELF REFRESH

e0

.001 Amp

1,2,4,8

20.95 mm

5 ns

HYS64V64220GU-7.5-C2

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

3840 mA

67108864 words

YES

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

64MX64

64M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

133 MHz

Not Qualified

4294967296 bit

3 V

AUTO/SELF REFRESH

.032 Amp

5.4 ns

HYB18T512400AC-3.7

Infineon Technologies

DDR2 DRAM

OTHER

60

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

134217728 words

4,8

YES

COMMON

1.8

1.8

4

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA60,9X11,32

DRAMs

.8 mm

95 Cel

3-STATE

128MX4

128M

0 Cel

TIN LEAD

BOTTOM

1

R-PBGA-B60

1.9 V

1.2 mm

267 MHz

10 mm

Not Qualified

536870912 bit

1.7 V

AUTO/SELF REFRESH

e0

.004 Amp

4,8

10.5 mm

.5 ns

HYS72V2200GU-10

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

900 mA

2097152 words

YES

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

2MX72

2M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

100 MHz

Not Qualified

150994944 bit

3 V

AUTO/SELF REFRESH

.018 Amp

8 ns

HYM64V1005GCDL-50

Infineon Technologies

EDO DRAM MODULE

COMMERCIAL

144

DIMM

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1048576 words

YES

3.3

64

MICROELECTRONIC ASSEMBLY

70 Cel

1MX64

1M

0 Cel

ZIG-ZAG

1

R-XZMA-N144

3.6 V

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/SELF REFRESH

50 ns

HYM64V8005GU-70

Infineon Technologies

EDO DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

800 mA

8388608 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

32

DRAMs

1.27 mm

70 Cel

3-STATE

8MX64

8M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

25.4 mm

Not Qualified

536870912 bit

3 V

RAS ONLY/CAS BEFORE RAS REFRESH

.004 Amp

70 ns

HYS72V4000GU-12

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

2500 mA

4194304 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

4MX72

4M

0 Cel

DUAL

R-PDMA-N168

83 MHz

Not Qualified

301989888 bit

.04 Amp

10 ns

HYM361110S-80

Infineon Technologies

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1000 mA

1048576 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX36

1M

0 Cel

SINGLE

R-PSMA-N72

31.75 mm

Not Qualified

37748736 bit

.012 Amp

80 ns

HYB39S128160DT-6

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

8388608 words

YES

3.3

16

SMALL OUTLINE, THIN PROFILE

.8 mm

70 Cel

8MX16

8M

0 Cel

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

10.16 mm

Not Qualified

134217728 bit

3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

22.22 mm

5 ns

HYB39S16400T-12

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

44

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

DUAL BANK PAGE BURST

YES

1

MOS

GULL WING

SYNCHRONOUS

125 mA

4194304 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G44

3.6 V

1.2 mm

83 MHz

10.16 mm

Not Qualified

16777216 bit

3 V

AUTO/SELF REFRESH

e0

.002 Amp

1,2,4,8

18.41 mm

10 ns

HYS64V2200GU-10

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

800 mA

2097152 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

2MX64

2M

0 Cel

DUAL

R-PDMA-N168

100 MHz

Not Qualified

134217728 bit

.016 Amp

8 ns

HYB511000J-85

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

70 mA

1048576 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX1

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

1048576 bit

e0

.001 Amp

85 ns

HYS64D64020HU-7-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

67108864 words

YES

2.5

64

MICROELECTRONIC ASSEMBLY

70 Cel

64MX64

64M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

Not Qualified

4294967296 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.75 ns

HYB514000J-10

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

66 mA

4194304 words

NO

SEPARATE

5

5

1

SMALL OUTLINE

SOJ20/26,.4

DRAMs

1.27 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

4194304 bit

e0

.0011 Amp

100 ns

HYB5116405BJ-70

Infineon Technologies

EDO DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

80 mA

4194304 words

YES

COMMON

5

5

4

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

16777216 bit

e0

.001 Amp

70 ns

HYS72V2100GU-10

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

900 mA

2097152 words

YES

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

Other Memory ICs

1.27 mm

70 Cel

3-STATE

2MX72

2M

3 V

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

100 MHz

Not Qualified

150994944 bit

3 V

AUTO/SELF REFRESH

.018 Amp

8 ns

HYS64V32300GU-8-C2

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1760 mA

33554432 words

YES

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

32MX64

32M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

100 MHz

Not Qualified

2147483648 bit

3 V

AUTO/SELF REFRESH

.016 Amp

6 ns

HYB3165800AT-50

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

32

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

130 mA

8388608 words

NO

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

DRAMs

1.27 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G32

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.0005 Amp

20.95 mm

50 ns

HYS64V8200GU-8B

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

130 mA

8388608 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

8MX64

8M

0 Cel

DUAL

R-PDMA-N168

100 MHz

Not Qualified

536870912 bit

.001 Amp

6 ns

HYS64T16000HU-3-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

16777216 words

YES

1.8

64

MICROELECTRONIC ASSEMBLY

55 Cel

16MX64

16M

0 Cel

MATTE TIN

DUAL

1

R-XDMA-N240

1.9 V

Not Qualified

1073741824 bit

1.7 V

AUTO/SELF REFRESH

e3

.45 ns

HYS64V8220GDL-8-B

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

144

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

8388608 words

YES

3.3

64

MICROELECTRONIC ASSEMBLY

70 Cel

8MX64

8M

0 Cel

ZIG-ZAG

1

R-XZMA-N144

3.6 V

Not Qualified

536870912 bit

3 V

AUTO/SELF REFRESH

6 ns

HYB514256AJL-60

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

90 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

256KX4

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

1048576 bit

e0

.0003 Amp

60 ns

HYS72V8200GU-8

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

130 mA

8388608 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

8MX72

8M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

100 MHz

Not Qualified

603979776 bit

3 V

.001 Amp

6 ns

HYM32V4040GD-60

Infineon Technologies

FAST PAGE DRAM MODULE

COMMERCIAL

72

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

210 mA

4194304 words

NO

COMMON

3.3

3.3

32

MICROELECTRONIC ASSEMBLY

DIMM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

DUAL

R-PDMA-N72

25.4 mm

Not Qualified

134217728 bit

.0018 Amp

60 ns

HYS72D128320GBR-6-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

6760 mA

134217728 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

166 MHz

Not Qualified

9663676416 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.7 ns

HYR166420G-653

Infineon Technologies

RAMBUS DRAM MODULE

184

DIMM

RECTANGULAR

UNSPECIFIED

BLOCK ORIENTED PROTOCOL

NO

1

CMOS

NO LEAD

SYNCHRONOUS

67108864 words

YES

COMMON

2.5

1.8/2.5,2.5

16

MICROELECTRONIC ASSEMBLY

DIMM184,40

DRAMs

1 mm

3-STATE

64MX16

64M

DUAL

1

R-XDMA-N184

2.63 V

600 MHz

Not Qualified

1073741824 bit

2.37 V

SELF CONTAINED REFRESH

1.6 ns

HYS72V16200GU-8B

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

240 mA

16777216 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

16MX72

16M

0 Cel

DUAL

R-PDMA-N168

100 MHz

Not Qualified

1207959552 bit

.002 Amp

6 ns

HYS72T64001HP-3.7-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

67108864 words

YES

1.8

72

MICROELECTRONIC ASSEMBLY

65 Cel

64MX72

64M

0 Cel

DUAL

1

R-XDMA-N240

1.9 V

Not Qualified

4831838208 bit

1.7 V

AUTO/SELF REFRESH

.5 ns

HYB18T512160AC-3S

Infineon Technologies

DDR2 DRAM

OTHER

84

FBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

33554432 words

YES

1.8

16

GRID ARRAY, FINE PITCH

.8 mm

95 Cel

32MX16

32M

0 Cel

BOTTOM

1

R-PBGA-B84

1.9 V

10 mm

Not Qualified

536870912 bit

1.7 V

AUTO/SELF REFRESH

12.5 mm

.45 ns

HYS72V64220GU-7.5

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

270 mA

67108864 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

64MX72

64M

0 Cel

DUAL

R-PDMA-N168

133 MHz

Not Qualified

4831838208 bit

.002 Amp

5.4 ns

HYS64V16200GDL-7-D

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

144

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

16777216 words

YES

3.3

64

MICROELECTRONIC ASSEMBLY

70 Cel

16MX64

16M

0 Cel

DUAL

1

R-XDMA-N144

3.6 V

Not Qualified

1073741824 bit

3 V

AUTO/SELF REFRESH

5.4 ns

HYS64D64020GBDL-5-C

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

200

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2430 mA

67108864 words

YES

COMMON

2.6

2.6

64

MICROELECTRONIC ASSEMBLY

DIMM200,24

DRAMs

.6 mm

70 Cel

3-STATE

64MX64

64M

0 Cel

DUAL

1

R-XDMA-N200

2.7 V

200 MHz

Not Qualified

4294967296 bit

2.5 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.5 ns

HYM364020S-70

Infineon Technologies

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1200 mA

4194304 words

NO

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

18

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

22.86 mm

Not Qualified

150994944 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.012 Amp

70 ns

HYS64T32000GU-3-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

33554432 words

YES

1.8

64

MICROELECTRONIC ASSEMBLY

55 Cel

32MX64

32M

0 Cel

DUAL

1

R-XDMA-N240

1.9 V

Not Qualified

2147483648 bit

1.7 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.45 ns

HYB514256-85

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

20

DIP

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

75 mA

262144 words

COMMON

5

5

4

IN-LINE

DIP20,.3

DRAMs

2.54 mm

70 Cel

3-STATE

256KX4

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T20

Not Qualified

1048576 bit

e0

.001 Amp

85 ns

HYM32200L-60

Infineon Technologies

FAST PAGE DRAM MODULE

COMMERCIAL

30

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

310 mA

1048576 words

COMMON

5

5

9

MICROELECTRONIC ASSEMBLY

SIP30,.2

DRAMs

2.54 mm

70 Cel

3-STATE

1MX9

1M

0 Cel

TIN LEAD

SINGLE

1

R-XSMA-T30

5.5 V

17.5006 mm

Not Qualified

9437184 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT

e0

.003 Amp

60 ns

HYB314405BJL-50

Infineon Technologies

EDO DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

70 mA

1048576 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J20

3.6 V

3.75 mm

7.75 mm

Not Qualified

4194304 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.0002 Amp

17.27 mm

50 ns

HYS72V2200GU-8

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

900 mA

2097152 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

2MX72

2M

0 Cel

DUAL

R-PDMA-N168

100 MHz

Not Qualified

150994944 bit

.018 Amp

6 ns

HYB3164405TL-60

Infineon Technologies

EDO DRAM

COMMERCIAL

34

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

16777216 words

YES

3.3

4

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

16MX4

16M

0 Cel

DUAL

1

R-PDSO-G34

3.6 V

1.2 mm

12.7 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

22.25 mm

60 ns

HYS72T64000HFN-3S-A

Infineon Technologies

DDR DRAM MODULE

240

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

67108864 words

YES

1.8

8

MICROELECTRONIC ASSEMBLY

64MX8

64M

MATTE TIN

DUAL

1

R-XDMA-N240

1.9 V

Not Qualified

536870912 bit

1.7 V

AUTO/SELF REFRESH

e3

HYS72V8300GU-8

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

110 mA

8388608 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

8MX72

8M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

100 MHz

Not Qualified

603979776 bit

3 V

.001 Amp

6 ns

HYR1612830G-840

Infineon Technologies

RAMBUS DRAM MODULE

184

DIMM

RECTANGULAR

UNSPECIFIED

BLOCK ORIENTED PROTOCOL

NO

1

CMOS

NO LEAD

SYNCHRONOUS

134217728 words

YES

COMMON

2.5

1.8/2.5,2.5

16

MICROELECTRONIC ASSEMBLY

DIMM184,40

DRAMs

1 mm

3-STATE

128MX16

128M

DUAL

1

R-XDMA-N184

2.63 V

800 MHz

Not Qualified

2147483648 bit

2.37 V

SELF CONTAINED REFRESH

2.06 ns

HYS64T128020HU-3.7-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

134217728 words

YES

1.8

64

MICROELECTRONIC ASSEMBLY

65 Cel

128MX64

128M

0 Cel

MATTE TIN

DUAL

1

R-XDMA-N240

1.9 V

Not Qualified

8589934592 bit

1.7 V

AUTO/SELF REFRESH

e3

.5 ns

HYS72T64000HFA-3S-A

Infineon Technologies

DDR DRAM MODULE

240

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

67108864 words

YES

1.8

8

MICROELECTRONIC ASSEMBLY

64MX8

64M

MATTE TIN

DUAL

1

R-XDMA-N240

1.9 V

Not Qualified

536870912 bit

1.7 V

AUTO/SELF REFRESH

e3

HYS72T32000HU-2.5-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

33554432 words

YES

1.8

72

MICROELECTRONIC ASSEMBLY

65 Cel

32MX72

32M

0 Cel

DUAL

1

R-XDMA-N240

1.9 V

Not Qualified

2415919104 bit

1.7 V

AUTO/SELF REFRESH

.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.