Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Interleaved Burst Length | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
FAST PAGE DRAM |
COMMERCIAL |
20 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
95 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ20/26,.4 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J20 |
5.5 V |
3.75 mm |
9 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
e0 |
.001 Amp |
17.27 mm |
80 ns |
|||||||||||||||
Infineon Technologies |
FAST PAGE DRAM |
COMMERCIAL |
32 |
TSOP2 |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
130 mA |
16777216 words |
NO |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX4 |
16M |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G32 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
67108864 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
e0 |
.0009 Amp |
20.95 mm |
50 ns |
|||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
90 mA |
4194304 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX64 |
4M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
100 MHz |
Not Qualified |
268435456 bit |
3 V |
.001 Amp |
8 ns |
|||||||||||||||||||||
Infineon Technologies |
DDR2 DRAM |
OTHER |
84 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
FOUR BANK PAGE BURST |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
16777216 words |
YES |
2 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
.8 mm |
85 Cel |
16MX16 |
16M |
0 Cel |
BOTTOM |
1 |
R-PBGA-B84 |
2.1 V |
1.2 mm |
10 mm |
Not Qualified |
268435456 bit |
1.9 V |
AUTO/SELF REFRESH |
12.5 mm |
.55 ns |
|||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP2 |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
FOUR BANK PAGE BURST |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
250 mA |
33554432 words |
1,2,4,8 |
YES |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
32MX4 |
32M |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G54 |
3.6 V |
1.2 mm |
143 MHz |
10.16 mm |
Not Qualified |
134217728 bit |
3 V |
AUTO/SELF REFRESH |
e0 |
.0015 Amp |
1,2,4,8 |
22.22 mm |
5.4 ns |
||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
240 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX64 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
2147483648 bit |
.002 Amp |
6 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
33554432 words |
YES |
2.6 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
32MX72 |
32M |
0 Cel |
MATTE TIN |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
Not Qualified |
2415919104 bit |
2.5 V |
AUTO/SELF REFRESH |
e3 |
.6 ns |
||||||||||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
33554432 words |
YES |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
55 Cel |
32MX72 |
32M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.9 V |
Not Qualified |
2415919104 bit |
1.7 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.5 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
FOUR BANK PAGE BURST |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
33554432 words |
YES |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
70 Cel |
32MX4 |
32M |
0 Cel |
DUAL |
1 |
R-PDSO-G54 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
134217728 bit |
3 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
22.22 mm |
5.4 ns |
|||||||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
33554432 words |
YES |
1.8 |
64 |
MICROELECTRONIC ASSEMBLY |
65 Cel |
32MX64 |
32M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.9 V |
Not Qualified |
2147483648 bit |
1.7 V |
AUTO/SELF REFRESH |
.4 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
240 mA |
67108864 words |
YES |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
100 MHz |
Not Qualified |
4831838208 bit |
3 V |
AUTO/SELF REFRESH |
.002 Amp |
6 ns |
|||||||||||||||||||
Infineon Technologies |
RAMBUS DRAM MODULE |
184 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
BLOCK ORIENTED PROTOCOL |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
33554432 words |
YES |
COMMON |
2.5 |
1.8/2.5,2.5 |
16 |
MICROELECTRONIC ASSEMBLY |
DIMM184,40 |
DRAMs |
1 mm |
3-STATE |
32MX16 |
32M |
DUAL |
1 |
R-XDMA-N184 |
2.63 V |
600 MHz |
Not Qualified |
536870912 bit |
2.37 V |
SELF CONTAINED REFRESH |
53 ns |
|||||||||||||||||||||||||
Infineon Technologies |
FAST PAGE DRAM |
COMMERCIAL |
20 |
DIP |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
90 mA |
262144 words |
COMMON |
5 |
5 |
4 |
IN-LINE |
DIP20,.3 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX4 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T20 |
Not Qualified |
1048576 bit |
e0 |
.001 Amp |
50 ns |
||||||||||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
33554432 words |
YES |
COMMON |
2.5 |
2.5 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX64 |
32M |
0 Cel |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
166 MHz |
Not Qualified |
2147483648 bit |
2.3 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.7 ns |
|||||||||||||||||||
Infineon Technologies |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1800 mA |
4194304 words |
NO |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
36 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
4MX72 |
4M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
Not Qualified |
301989888 bit |
3 V |
RAS ONLY/CAS BEFORE RAS REFRESH |
.03 Amp |
50 ns |
|||||||||||||||||||
|
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
5390 mA |
134217728 words |
YES |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
MATTE TIN |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
166 MHz |
Not Qualified |
9663676416 bit |
2.3 V |
AUTO/SELF REFRESH |
e3 |
.65 Amp |
.7 ns |
||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
990 mA |
8388608 words |
YES |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
100 MHz |
Not Qualified |
603979776 bit |
3 V |
AUTO/SELF REFRESH |
.018 Amp |
6 ns |
|||||||||||||||||||
|
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
67108864 words |
YES |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
65 Cel |
64MX72 |
64M |
0 Cel |
MATTE TIN |
DUAL |
1 |
R-XDMA-N240 |
1.9 V |
Not Qualified |
4831838208 bit |
1.7 V |
AUTO/SELF REFRESH |
e3 |
.4 ns |
||||||||||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
67108864 words |
YES |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
64MX72 |
64M |
0 Cel |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
Not Qualified |
4831838208 bit |
2.3 V |
AUTO/SELF REFRESH |
.7 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
FAST PAGE DRAM |
COMMERCIAL |
28 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
100 mA |
524288 words |
YES |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J28 |
Not Qualified |
4194304 bit |
e0 |
.0002 Amp |
70 ns |
|||||||||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
200 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
2360 mA |
67108864 words |
YES |
COMMON |
2.5 |
2.5 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM200,24 |
DRAMs |
.6 mm |
70 Cel |
3-STATE |
64MX64 |
64M |
0 Cel |
DUAL |
1 |
R-XDMA-N200 |
2.7 V |
143 MHz |
Not Qualified |
4294967296 bit |
2.3 V |
AUTO/SELF REFRESH |
.75 ns |
||||||||||||||||||||
|
Infineon Technologies |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
FOUR BANK PAGE BURST |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
67108864 words |
YES |
3.3 |
4 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
.8 mm |
70 Cel |
64MX4 |
64M |
0 Cel |
BOTTOM |
1 |
R-PBGA-B54 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
268435456 bit |
3 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
12 mm |
5 ns |
||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
3870 mA |
67108864 words |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
R-PDMA-N184 |
125 MHz |
Not Qualified |
4831838208 bit |
.578 Amp |
.8 ns |
||||||||||||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
5040 mA |
134217728 words |
YES |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
143 MHz |
Not Qualified |
9663676416 bit |
2.3 V |
AUTO/SELF REFRESH |
.75 ns |
||||||||||||||||||||
Infineon Technologies |
DDR2 DRAM |
OTHER |
60 |
TFBGA |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
FOUR BANK PAGE BURST |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
67108864 words |
4,8 |
YES |
COMMON |
1.8 |
1.8 |
8 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA60,9X11,32 |
DRAMs |
.8 mm |
95 Cel |
3-STATE |
64MX8 |
64M |
0 Cel |
TIN LEAD |
BOTTOM |
1 |
R-PBGA-B60 |
1.9 V |
1.2 mm |
267 MHz |
10 mm |
Not Qualified |
536870912 bit |
1.7 V |
AUTO/SELF REFRESH |
e0 |
.004 Amp |
4,8 |
10.5 mm |
.5 ns |
|||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
33554432 words |
YES |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
32MX72 |
32M |
0 Cel |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
Not Qualified |
2415919104 bit |
2.3 V |
AUTO/SELF REFRESH |
.8 ns |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
FOUR BANK PAGE BURST |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
67108864 words |
YES |
3.3 |
4 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
.8 mm |
70 Cel |
64MX4 |
64M |
0 Cel |
BOTTOM |
1 |
R-PBGA-B54 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
268435456 bit |
3 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
12 mm |
5 ns |
||||||||||||||||||||||
Infineon Technologies |
RAMBUS DRAM MODULE |
184 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
BLOCK ORIENTED PROTOCOL |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
67108864 words |
YES |
COMMON |
2.5 |
1.8/2.5,2.5 |
18 |
MICROELECTRONIC ASSEMBLY |
DIMM184,40 |
DRAMs |
1 mm |
3-STATE |
64MX18 |
64M |
DUAL |
1 |
R-XDMA-N184 |
2.63 V |
600 MHz |
Not Qualified |
1207959552 bit |
2.37 V |
SELF CONTAINED REFRESH |
1.6 ns |
|||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1620 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
33.02 mm |
Not Qualified |
603979776 bit |
3 V |
RAS ONLY/CAS BEFORE RAS REFRESH |
.03 Amp |
60 ns |
||||||||||||||||||||
Infineon Technologies |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
480 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
20.32 mm |
Not Qualified |
67108864 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.004 Amp |
50 ns |
|||||||||||||||||||
|
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
268435456 words |
YES |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
256MX72 |
256M |
0 Cel |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
Not Qualified |
19327352832 bit |
2.3 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.8 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM |
COMMERCIAL |
42 |
SOJ |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
90 mA |
1048576 words |
YES |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ42,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J42 |
Not Qualified |
16777216 bit |
e0 |
.001 Amp |
60 ns |
|||||||||||||||||||||||||
Infineon Technologies |
DDR2 DRAM |
60 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
FOUR BANK PAGE BURST |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
67108864 words |
YES |
1.8 |
8 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
.8 mm |
64MX8 |
64M |
BOTTOM |
1 |
R-PBGA-B60 |
1.9 V |
1.2 mm |
10 mm |
Not Qualified |
536870912 bit |
1.7 V |
AUTO/SELF REFRESH |
10.5 mm |
.6 ns |
||||||||||||||||||||||||||||
Infineon Technologies |
FAST PAGE DRAM |
COMMERCIAL |
34 |
SOJ |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
120 mA |
8388608 words |
YES |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ34,.54 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX8 |
8M |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J34 |
3.6 V |
3.76 mm |
12.7 mm |
Not Qualified |
67108864 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
e0 |
.0002 Amp |
22.25 mm |
60 ns |
|||||||||||||||
|
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
1720 mA |
33554432 words |
YES |
COMMON |
2.5 |
2.6 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX64 |
32M |
0 Cel |
MATTE TIN |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
167 MHz |
Not Qualified |
2147483648 bit |
2.3 V |
AUTO/SELF REFRESH |
e3 |
.7 ns |
|||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
134217728 words |
YES |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
65 Cel |
128MX72 |
128M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.9 V |
Not Qualified |
9663676416 bit |
1.7 V |
AUTO/SELF REFRESH |
.5 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
8388608 words |
YES |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
8MX64 |
8M |
0 Cel |
ZIG-ZAG |
1 |
R-XZMA-N144 |
3.6 V |
Not Qualified |
536870912 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/SELF REFRESH |
50 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
FAST PAGE DRAM |
COMMERCIAL |
34 |
TSOP |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
100 mA |
16777216 words |
YES |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP34,.56 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX4 |
16M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G34 |
Not Qualified |
67108864 bit |
e0 |
.0002 Amp |
60 ns |
|||||||||||||||||||||||||
Infineon Technologies |
FAST PAGE DRAM |
COMMERCIAL |
20 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
85 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ20/26,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J20 |
5.5 V |
3.66 mm |
7.75 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH; TEST MODE |
e0 |
.0002 Amp |
17.27 mm |
80 ns |
|||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
67108864 words |
YES |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
64MX72 |
64M |
0 Cel |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
Not Qualified |
4831838208 bit |
2.3 V |
AUTO/SELF REFRESH |
.8 ns |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
134217728 words |
YES |
2.6 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
128MX72 |
128M |
0 Cel |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
Not Qualified |
9663676416 bit |
2.5 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.6 ns |
||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM MODULE |
COMMERCIAL |
72 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
800 mA |
4194304 words |
YES |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
DIMM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX32 |
4M |
0 Cel |
DUAL |
1 |
R-XDMA-N72 |
3.6 V |
Not Qualified |
134217728 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/SELF REFRESH |
.0016 Amp |
50 ns |
|||||||||||||||||||
|
Infineon Technologies |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
FOUR BANK PAGE BURST |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
33554432 words |
YES |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
70 Cel |
32MX16 |
32M |
0 Cel |
DUAL |
1 |
R-PDSO-G54 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
536870912 bit |
3 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
22.22 mm |
6 ns |
||||||||||||||||||||||
Infineon Technologies |
FAST PAGE DRAM |
COMMERCIAL |
28 |
SOJ |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
120 mA |
2097152 words |
YES |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ28,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J28 |
Not Qualified |
16777216 bit |
e0 |
.0002 Amp |
50 ns |
|||||||||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
33554432 words |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N184 |
143 MHz |
Not Qualified |
2415919104 bit |
.75 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
5760 mA |
134217728 words |
YES |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
128MX64 |
128M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
100 MHz |
Not Qualified |
8589934592 bit |
3 V |
AUTO/SELF REFRESH |
.064 Amp |
6 ns |
|||||||||||||||||||
Infineon Technologies |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
800 mA |
262144 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
9437184 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.018 Amp |
80 ns |
|||||||||||||||||||||
Infineon Technologies |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1120 mA |
8388608 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX36 |
8M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
301989888 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.024 Amp |
60 ns |
DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.
DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.
DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.
There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.
One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.