Renesas Electronics DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

UPD42S4800AG5-60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

100 mA

524288 words

YES

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSOP28,.46

DRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G28

Not Qualified

4194304 bit

e0

.0003 Amp

60 ns

UPD424410LA-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

90 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

4194304 bit

e0

.001 Amp

80 ns

UPD4217400G3M-60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

110 mA

4194304 words

NO

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE

TSOP24/26,.36

DRAMs

1.27 mm

70 Cel

YES

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G24

Not Qualified

16777216 bit

e0

.001 Amp

60 ns

MC-4516CD641ES-A10L

Renesas Electronics

SYNCHRONOUS DRAM MODULE

COMMERCIAL

144

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1000 mA

16777216 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM144,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX64

16M

0 Cel

DUAL

R-PDMA-N144

100 MHz

Not Qualified

1073741824 bit

.004 Amp

6 ns

UPD42S64800LG-A80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

34

SOJ

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

8388608 words

YES

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ34,.54

DRAMs

1.27 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J34

Not Qualified

67108864 bit

e0

80 ns

UPD42S16900LLE-A80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

32

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

70 mA

2097152 words

YES

COMMON

3.3

3.3

9

SMALL OUTLINE

SOJ32,.44

DRAMs

1.27 mm

70 Cel

3-STATE

2MX9

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J32

Not Qualified

18874368 bit

e0

.0001 Amp

80 ns

UPD424101GS-10

Renesas Electronics

NIBBLE MODE DRAM

COMMERCIAL

20

TSSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

80 mA

4194304 words

SEPARATE

5

5

1

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP20/26,.36

DRAMs

.635 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G20

Not Qualified

4194304 bit

e0

.001 Amp

100 ns

UPD42S4263LLE-A60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

130 mA

262144 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J40

Not Qualified

4194304 bit

e0

.0001 Amp

60 ns

UPD42S4900LE-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

160 mA

524288 words

YES

COMMON

5

5

9

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

512KX9

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

4718592 bit

e0

.00015 Amp

70 ns

UPD421000GXM-60L

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

TSSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

90 mA

1048576 words

SEPARATE

5

5

1

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP20/24,.63,20

DRAMs

.5 mm

70 Cel

YES

3-STATE

1MX1

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G20

Not Qualified

1048576 bit

e0

.0002 Amp

60 ns

UPD4216100LA-50

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

100 mA

16777216 words

NO

SEPARATE

5

5

1

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

16MX1

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

16777216 bit

e0

.001 Amp

50 ns

UPD42S17100G3-50

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

120 mA

16777216 words

YES

SEPARATE

5

5

1

SMALL OUTLINE, THIN PROFILE

TSOP24/26,.36

DRAMs

1.27 mm

70 Cel

3-STATE

16MX1

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G24

Not Qualified

16777216 bit

e0

.00025 Amp

50 ns

UPD42S4190LV-A80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

100 mA

262144 words

YES

COMMON

3.3

3.3

18

IN-LINE

ZIP40,.1

DRAMs

1.27 mm

70 Cel

3-STATE

256KX18

256K

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T40

Not Qualified

4718592 bit

e0

.0001 Amp

80 ns

UPD42S4260LG5-A60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

140 mA

262144 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

e0

.0001 Amp

60 ns

UPD4516161G5A12

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

50

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

180 mA

1048576 words

1,2,4,8,FP

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

R-PDSO-G50

83 MHz

Not Qualified

16777216 bit

.002 Amp

1,2,4,8

10 ns

UPD4516821AG5-A10-7JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

44

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

160 mA

2097152 words

1,2,4,8,FP

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

100 MHz

Not Qualified

16777216 bit

e0

.002 Amp

1,2,4,8

7 ns

UPD4216412V-60

Renesas Electronics

STATIC COLUMN DRAM

COMMERCIAL

24

ZIP

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

4194304 words

COMMON

5

5

4

IN-LINE

ZIP24,.1

SRAMs

1.27 mm

70 Cel

YES

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T24

Not Qualified

16777216 bit

e0

60 ns

UPD4216100G5M-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

80 mA

16777216 words

NO

SEPARATE

5

5

1

SMALL OUTLINE, THIN PROFILE

TSOP24/28,.46

DRAMs

1.27 mm

70 Cel

YES

3-STATE

16MX1

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G24

Not Qualified

16777216 bit

e0

.001 Amp

70 ns

UPD4216800G5M-50

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

100 mA

2097152 words

NO

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSOP28,.46

DRAMs

1.27 mm

70 Cel

YES

3-STATE

2MX8

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G28

Not Qualified

16777216 bit

e0

.0004 Amp

50 ns

MC-422000AA64FB-80

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

168

DIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

632 mA

2097152 words

COMMON

5

5

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

2MX64

2M

0 Cel

DUAL

R-PDMA-N168

Not Qualified

134217728 bit

.072 Amp

80 ns

UPD424256LA-60L

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

90 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

256KX4

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

1048576 bit

e0

.0002 Amp

60 ns

UPD42S17160LE-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

42

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

100 mA

1048576 words

YES

COMMON

5

5

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J42

Not Qualified

16777216 bit

e0

.0001 Amp

80 ns

UPD42S18160G5-50-7KF

Renesas Electronics

FAST PAGE DRAM

5

70 Cel

0 Cel

5.5 V

4.5 V

50 ns

MC-424000A32B-70

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

800 mA

4194304 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

SINGLE

R-PSMA-N72

25.4 mm

Not Qualified

134217728 bit

.008 Amp

70 ns

UPD4265800G7-A80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

34

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

8388608 words

NO

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSOP34,.56

DRAMs

1.27 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G34

Not Qualified

67108864 bit

e0

80 ns

UPD42S16400LG3-A80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

60 mA

4194304 words

YES

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP24/26,.36

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G24

Not Qualified

16777216 bit

e0

.00015 Amp

80 ns

UPD424260LG5-A10-7KF

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

100 mA

262144 words

NO

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

YES

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

e0

.0005 Amp

100 ns

MC-424000F32F-70

Renesas Electronics

EDO DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

800 mA

4194304 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

SINGLE

R-PSMA-N72

25.4 mm

Not Qualified

134217728 bit

.008 Amp

70 ns

UPD42S16400LG5-A60-7JD

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

80 mA

4194304 words

YES

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP24/28,.46

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G24

Not Qualified

16777216 bit

e0

.00015 Amp

60 ns

UPD42S16400LLE-A70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

70 mA

4194304 words

YES

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ24/28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

16777216 bit

e0

.00015 Amp

70 ns

UPD424800LE-10L

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

80 mA

524288 words

NO

COMMON

5

5

8

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

4194304 bit

e0

.0002 Amp

100 ns

MC-421000A32FA-70

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

300 mA

1048576 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX32

1M

0 Cel

SINGLE

R-PSMA-N72

25.4 mm

Not Qualified

33554432 bit

.002 Amp

70 ns

MC-4516CD646F-A80

Renesas Electronics

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1280 mA

16777216 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

16MX64

16M

0 Cel

DUAL

R-PDMA-N168

125 MHz

Not Qualified

1073741824 bit

.008 Amp

6 ns

UPD48576218FF-E18-DW1

Renesas Electronics

DDR1 DRAM

144

TBGA

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

1078 mA

33554432 words

2,4,8

COMMON

1.8

1.5/1.8,1.8,2.5

18

GRID ARRAY, THIN PROFILE

BGA144,12X18,40/32

DRAMs

1 mm

3-STATE

32MX18

32M

BOTTOM

1

R-PBGA-B144

1.9 V

1.17 mm

533 MHz

11 mm

Not Qualified

603979776 bit

1.7 V

AUTO REFRESH

.055 Amp

18.5 mm

.22 ns

UPD42S17100G5-50-7KD

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

120 mA

16777216 words

YES

SEPARATE

5

5

1

SMALL OUTLINE, THIN PROFILE

TSOP24/28,.46

DRAMs

1.27 mm

70 Cel

YES

3-STATE

16MX1

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G24

Not Qualified

16777216 bit

e0

.0004 Amp

50 ns

UPD4565821G5-A15L-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

110 mA

8388608 words

1,2,4,8,16

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

67 MHz

Not Qualified

67108864 bit

e0

.0005 Amp

1,2,4,8,16

12 ns

UPD48288109AFF-E25-DW1

Renesas Electronics

DDR1 DRAM

OTHER

144

TBGA

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

33554432 words

SEPARATE

1.8

1.8,2.5

9

GRID ARRAY, THIN PROFILE

BGA144,12X18,40/32

DRAMs

1 mm

95 Cel

3-STATE

32MX9

32M

0 Cel

BOTTOM

1

R-PBGA-B144

1.9 V

1.17 mm

400 MHz

11 mm

Not Qualified

301989888 bit

1.7 V

AUTO REFRESH; IT ALSO REQUIRES AT 2.5V

2,4,8

18.5 mm

UPD424810LG5M-A60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

100 mA

524288 words

NO

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP28,.46

DRAMs

1.27 mm

70 Cel

YES

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G28

Not Qualified

4194304 bit

e0

.0001 Amp

60 ns

UPD48288218FF-E50-DW1-A

Renesas Electronics

DDR1 DRAM

144

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

560 mA

16777216 words

2,4,8

COMMON

1.8,2.5

18

GRID ARRAY

BGA144,12X18,40/32

DRAMs

.8 mm

3-STATE

16MX18

16M

BOTTOM

R-PBGA-B144

200 MHz

Not Qualified

301989888 bit

UPD424263LG5M-A70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

120 mA

262144 words

NO

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.36,32

DRAMs

.8 mm

70 Cel

YES

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

e0

.0001 Amp

70 ns

UPD4564323G5-A60-9JH

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

86

TSSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

240 mA

2097152 words

1,2,4,8,FP

COMMON

3.3

3.3

32

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP86,.46,20

DRAMs

.5 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G86

166 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8

5.5 ns

UPD48576209FF-E33-DW1

Renesas Electronics

DDR1 DRAM

144

TBGA

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

716 mA

67108864 words

2,4,8

COMMON

1.8

1.5/1.8,1.8,2.5

9

GRID ARRAY, THIN PROFILE

BGA144,12X18,40/32

DRAMs

1 mm

3-STATE

64MX9

64M

BOTTOM

1

R-PBGA-B144

1.9 V

1.17 mm

300 MHz

11 mm

Not Qualified

603979776 bit

1.7 V

AUTO REFRESH

.055 Amp

18.5 mm

.35 ns

UPD424410LB-10

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

80 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.4

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

4194304 bit

e0

.001 Amp

100 ns

UPD42S17100LLE-A70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

90 mA

16777216 words

YES

SEPARATE

3.3

3.3

1

SMALL OUTLINE

SOJ24/28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

16MX1

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

16777216 bit

e0

.0001 Amp

70 ns

UPD424402V-80L

Renesas Electronics

STATIC COLUMN DRAM

COMMERCIAL

20

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

90 mA

1048576 words

COMMON

5

5

4

IN-LINE

ZIP20,.1

SRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T20

Not Qualified

4194304 bit

e0

.0003 Amp

80 ns

MC-42S4000LAC32SA-60

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

DIMM

2048

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

800 mA

4194304 words

YES

COMMON

3.3

3.3

32

MICROELECTRONIC ASSEMBLY

DIMM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

DUAL

R-PDMA-N72

25.4 mm

Not Qualified

134217728 bit

.0012 Amp

60 ns

UPD42S16900G5M50

Renesas Electronics

FAST PAGE DRAM

5

70 Cel

0 Cel

5.5 V

4.5 V

UPD45128841G5-A10B-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

230 mA

16777216 words

1,2,4,8,FP

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX8

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

100 MHz

Not Qualified

134217728 bit

e0

.0005 Amp

1,2,4,8

7 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.