Renesas Electronics DRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
UPD424263LV-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		120 mA	262144 words		NO	COMMON	3.3	3.3	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T40					Not Qualified	4194304 bit			e0	.0001 Amp			70 ns
MC-421000A36FD-80	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1000 mA	1048576 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	1MX36	1M	0 Cel		SINGLE		R-PSMA-N72		25.4 mm			Not Qualified	37748736 bit				.012 Amp			80 ns
UPD4565421G5-A10-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		115 mA	16777216 words	1,2,4,8,16		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			100 MHz		Not Qualified	67108864 bit			e0	.0005 Amp	1,2,4,8,16		6 ns
UPD42S17805LG5-A60	Renesas Electronics	EDO DRAM	COMMERCIAL	28	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	2097152 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28					Not Qualified	16777216 bit			e0	.00015 Amp			60 ns
UPD42S16100Q-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	QFP	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	GULL WING		120 mA	16777216 words		YES	SEPARATE	5	5	1	FLATPACK	QFP28,.56SQ,50	DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQFP-G28					Not Qualified	16777216 bit			e0	.0002 Amp			70 ns
UPD42S17900LG5-A80-7JD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	32	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	2097152 words		YES	COMMON	3.3	3.3	9	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel		3-STATE	2MX9	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	18874368 bit			e0	.0001 Amp			80 ns
MC-4532DA726F-A10	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4800 mA	33554432 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		3-STATE	32MX72	32M	0 Cel		DUAL		R-PDMA-N168			100 MHz		Not Qualified	2415919104 bit				.019 Amp			6 ns
UPD48288209AFF-E18-DW1-A	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words			COMMON	1.8	1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	32MX9	32M			BOTTOM	1	R-PBGA-B144	1.9 V	1.17 mm	533 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V			2,4,8	18.5 mm
MC-428000A36FH-10	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1020 mA	8388608 words		NO	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	8MX36	8M	0 Cel		SINGLE		R-PSMA-N72		31.75 mm			Not Qualified	301989888 bit				.024 Amp			100 ns
UPD42S17160G5-70	Renesas Electronics	FAST PAGE DRAM																		5							70 Cel					0 Cel					5.5 V						4.5 V						70 ns
UPD42S17160G5-80	Renesas Electronics	FAST PAGE DRAM																		5							70 Cel					0 Cel					5.5 V						4.5 V						80 ns
UPD42S4260V-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		160 mA	262144 words		YES	COMMON	5	5	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T40					Not Qualified	4194304 bit			e0	.0002 Amp			70 ns
MC-422000A36BJ-80	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1060 mA	2097152 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	2MX36	2M	0 Cel		SINGLE		R-PSMA-N72		31.75 mm			Not Qualified	75497472 bit				.024 Amp			80 ns
UPD42S17900LG5-A60-7KD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	32	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	2097152 words		YES	COMMON	3.3	3.3	9	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	2MX9	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	18874368 bit			e0	.0001 Amp			60 ns
MC-424256A36B-85	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		808 mA	262144 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	256KX36	256K	0 Cel		SINGLE		R-PSMA-N72		25.4 mm			Not Qualified	9437184 bit				.008 Amp			85 ns
UPD424266V-10	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		60 mA	262144 words			COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20					Not Qualified	1048576 bit			e0	.001 Amp			100 ns
UPD424170LG5-A70-7KF	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	262144 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40					Not Qualified	4194304 bit			e0	.0005 Amp			70 ns
UPD48288209AFF-E18-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			33554432 words			COMMON		1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	32MX9	32M			BOTTOM		R-PBGA-B144			533 MHz		Not Qualified	301989888 bit					2,4,8
UPD42S65800G7-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			8388608 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP34,.56	DRAMs	1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G34					Not Qualified	67108864 bit			e0				70 ns
UPD4516821AG5-A80L-7JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		160 mA	2097152 words	1,2,4,8,FP		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44			125 MHz		Not Qualified	16777216 bit			e0	.002 Amp	1,2,4,8		6 ns
MC-421000A8A-12	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30		512		PLASTIC/EPOXY		NO		CMOS			400 mA	1048576 words			COMMON	5	5	8		SIP30,.2	DRAMs	2.54 mm	70 Cel		3-STATE	1MX8	1M	0 Cel	Tin/Lead (Sn/Pb)	SINGLE				21.6154 mm			Not Qualified	8388608 bit			e0	.008 Amp			120 ns
UPD42S18160G5-50	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		170 mA	1048576 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44					Not Qualified	16777216 bit			e0	.00025 Amp			50 ns
UPD424810ALE-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		90 mA	524288 words		NO	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28					Not Qualified	4194304 bit			e0	.0003 Amp			70 ns
UPD42S17405G3-70	Renesas Electronics	EDO DRAM	COMMERCIAL	24	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	4194304 words		YES	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24					Not Qualified	16777216 bit			e0	.00025 Amp			70 ns
UPD45125421G5-A75-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			33554432 words	1,2,4,8,16		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	32MX4	32M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			133 MHz		Not Qualified	134217728 bit			e0		1,2,4,8,16		5.4 ns
UPD42S4260AG5M-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		140 mA	262144 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40					Not Qualified	4194304 bit			e0	.0003 Amp			60 ns
UPD4216160LG5M-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		80 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44					Not Qualified	16777216 bit			e0	.0005 Amp			70 ns
MC-4516DC72F-A12	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1425 mA	16777216 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel		3-STATE	16MX72	16M	0 Cel		DUAL		R-PDMA-N200			83 MHz		Not Qualified	1207959552 bit				.036 Amp			9.5 ns
MC-421000A36BT-70	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1120 mA	1048576 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	1MX36	1M	0 Cel		SINGLE		R-PSMA-N72		25.4 mm			Not Qualified	37748736 bit				.012 Amp			70 ns
UPD42S17800G5-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	2097152 words		YES	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28					Not Qualified	16777216 bit			e0	.00025 Amp			80 ns
UPD4216165G5-50	Renesas Electronics	EDO DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		120 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44					Not Qualified	16777216 bit			e0	.001 Amp			50 ns
UPD42S16180G5-80	Renesas Electronics	FAST PAGE DRAM																		5							70 Cel					0 Cel					5.5 V						4.5 V						80 ns
UPD42S16400G5-80-7JD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		70 mA	4194304 words		YES	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24					Not Qualified	16777216 bit			e0	.00025 Amp			80 ns
MC-4R64CEE6C-653	Renesas Electronics	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			33554432 words			COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm			3-STATE	32MX16	32M			DUAL		R-PDMA-N184			600 MHz		Not Qualified	536870912 bit
UPD4217412G5M-70	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	24	TSSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			4194304 words			COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP24/28,.46,20	SRAMs	.5 mm	70 Cel	YES	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24					Not Qualified	16777216 bit			e0				70 ns
UPD4216160G5-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44					Not Qualified	16777216 bit			e0	.001 Amp			70 ns
UPD4216402G5-70	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	SRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24					Not Qualified	16777216 bit			e0				70 ns
UPD421000GXM-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/24,.63,20	DRAMs	.5 mm	70 Cel	YES	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20					Not Qualified	1048576 bit			e0	.001 Amp			60 ns
UPD414C	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	64	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			4096 words			SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel		3-STATE	4KX1	4K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16					Not Qualified	4096 bit			e0				300 ns
UPD42S17900LG5-A60-7JD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	32	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	2097152 words		YES	COMMON	3.3	3.3	9	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel		3-STATE	2MX9	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	18874368 bit			e0	.0001 Amp			60 ns
UPD41464L-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND			65536 words			COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel		3-STATE	64KX4	64K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18					Not Qualified	262144 bit			e0				150 ns
MC-4532CD646F-A10	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2200 mA	33554432 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N168			100 MHz		Not Qualified	2147483648 bit				.008 Amp			6 ns
UPD42S17160G5-80-7JF	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	1048576 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44					Not Qualified	16777216 bit			e0	.0004 Amp			80 ns
MC-458CB64S-A12	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		800 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel		3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N144		29.21 mm	83 MHz		Not Qualified	536870912 bit				.016 Amp			9 ns
UPD4265400LG-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J34					Not Qualified	67108864 bit			e0				80 ns
UPD4565821G5-A80BL-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		125 mA	8388608 words	1,2,4,8,16		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			125 MHz		Not Qualified	67108864 bit			e0	.001 Amp	1,2,4,8,16		5.5 ns
UPD4217410V-10	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	ZIP	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE			4194304 words		NO	COMMON	5	5	4	IN-LINE	ZIP24,.1	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T24					Not Qualified	16777216 bit			e0				100 ns
UPD42S17400G5-80-7JD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	4194304 words		YES	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24					Not Qualified	16777216 bit			e0	.0004 Amp			80 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.