Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Interleaved Burst Length | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
DIMM |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
360 mA |
2097152 words |
YES |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
DIMM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
DUAL |
R-PDMA-N72 |
25.4 mm |
Not Qualified |
67108864 bit |
.0006 Amp |
70 ns |
||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
20 |
TSSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
120 mA |
1048576 words |
YES |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP20/26,.36 |
DRAMs |
.635 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G20 |
Not Qualified |
4194304 bit |
e0 |
.0002 Amp |
60 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
40 |
SOJ |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
190 mA |
262144 words |
YES |
COMMON |
5 |
5 |
18 |
SMALL OUTLINE |
SOJ40,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J40 |
Not Qualified |
4718592 bit |
e0 |
.0001 Amp |
70 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
40 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
130 mA |
262144 words |
YES |
COMMON |
5 |
5 |
18 |
SMALL OUTLINE |
SOJ40,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J40 |
Not Qualified |
4718592 bit |
e0 |
.0003 Amp |
60 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
DIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
281 mA |
2097152 words |
YES |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
DIMM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
DUAL |
R-PDMA-N72 |
25.4 mm |
Not Qualified |
67108864 bit |
.0006 Amp |
70 ns |
||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
34 |
SOJ |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
8388608 words |
NO |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ34,.54 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX8 |
8M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J34 |
Not Qualified |
67108864 bit |
e0 |
70 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
40 |
TSOP |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
190 mA |
262144 words |
NO |
COMMON |
5 |
5 |
18 |
SMALL OUTLINE, THIN PROFILE |
TSOP40/44,.46,32 |
DRAMs |
.8 mm |
70 Cel |
YES |
3-STATE |
256KX18 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G40 |
Not Qualified |
4718592 bit |
e0 |
.001 Amp |
70 ns |
||||||||||||||||||||||||
Renesas Electronics |
PAGE MODE DRAM |
COMMERCIAL |
30 |
SIMM |
256 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
180 mA |
262144 words |
COMMON |
5 |
5 |
9 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX9 |
256K |
0 Cel |
SINGLE |
R-PSMA-N30 |
16.7894 mm |
Not Qualified |
2359296 bit |
.003 Amp |
100 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
44 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
110 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
YES |
3-STATE |
1MX16 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G44 |
Not Qualified |
16777216 bit |
e0 |
.0004 Amp |
70 ns |
||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1020 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
R-PDMA-N144 |
100 MHz |
Not Qualified |
1073741824 bit |
.004 Amp |
7 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
28 |
ZIP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
105 mA |
524288 words |
NO |
COMMON |
5 |
5 |
8 |
IN-LINE |
ZIP28,.1 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T28 |
Not Qualified |
4194304 bit |
e0 |
.001 Amp |
70 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
40 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
90 mA |
262144 words |
YES |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP40/44,.46,32 |
DRAMs |
.8 mm |
70 Cel |
YES |
3-STATE |
256KX16 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G40 |
Not Qualified |
4194304 bit |
e0 |
.0003 Amp |
80 ns |
||||||||||||||||||||||||
Renesas Electronics |
RAMBUS DRAM |
32 |
PLASTIC/EPOXY |
YES |
CMOS |
2097152 words |
COMMON |
5 |
5 |
8 |
SMSIP32,25 |
DRAMs |
2.54 mm |
3-STATE |
2MX8 |
2M |
Tin/Lead (Sn/Pb) |
SINGLE |
Not Qualified |
16777216 bit |
e0 |
||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
20 |
ZIP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
70 mA |
1048576 words |
YES |
COMMON |
3.3 |
3.3 |
4 |
IN-LINE |
ZIP20,.1 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T20 |
Not Qualified |
4194304 bit |
e0 |
.0001 Amp |
70 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
18 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
262144 words |
5 |
1 |
CHIP CARRIER |
70 Cel |
256KX1 |
256K |
0 Cel |
QUAD |
1 |
R-PQCC-J18 |
5.5 V |
262144 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
120 ns |
|||||||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
28 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
100 mA |
524288 words |
NO |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP28,.46 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G28 |
Not Qualified |
4194304 bit |
e0 |
.0003 Amp |
60 ns |
|||||||||||||||||||||||||
|
Renesas Electronics |
DDR DRAM |
144 |
TBGA |
RECTANGULAR |
PLASTIC/EPOXY |
MULTI BANK PAGE BURST |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
16777216 words |
COMMON |
1.8 |
1.8,2.5 |
18 |
GRID ARRAY, THIN PROFILE |
BGA144,12X18,40/32 |
DRAMs |
1 mm |
3-STATE |
16MX18 |
16M |
TIN SILVER COPPER |
BOTTOM |
1 |
R-PBGA-B144 |
1.9 V |
1.17 mm |
300 MHz |
11 mm |
Not Qualified |
301989888 bit |
1.7 V |
AUTO REFRESH |
e1 |
2,4,8 |
18.5 mm |
.35 ns |
|||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
24 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
80 mA |
1048576 words |
YES |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24/26,.4 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J24 |
Not Qualified |
4194304 bit |
e0 |
.0003 Amp |
70 ns |
|||||||||||||||||||||||||
Renesas Electronics |
RAMBUS DRAM |
COMMERCIAL |
72 |
SSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
440 mA |
2097152 words |
COMMON |
3.3 |
3.3 |
9 |
SMALL OUTLINE, SHRINK PITCH |
SSOP72,.5 |
DRAMs |
.635 mm |
70 Cel |
3-STATE |
2MX9 |
2M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G72 |
225 MHz |
Not Qualified |
18874368 bit |
e0 |
.33 Amp |
||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
4540 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
133 MHz |
Not Qualified |
2415919104 bit |
.086 Amp |
5.4 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
280 mA |
1048576 words |
COMMON |
5 |
5 |
9 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
1MX9 |
1M |
0 Cel |
SINGLE |
R-PSMA-N30 |
16.6624 mm |
Not Qualified |
9437184 bit |
.003 Amp |
70 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
28 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
80 mA |
524288 words |
YES |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP28,.46 |
DRAMs |
1.27 mm |
70 Cel |
YES |
3-STATE |
512KX8 |
512K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G28 |
Not Qualified |
4194304 bit |
e0 |
.0001 Amp |
70 ns |
||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
40 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
130 mA |
262144 words |
NO |
COMMON |
5 |
5 |
18 |
SMALL OUTLINE |
SOJ40,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J40 |
Not Qualified |
4718592 bit |
e0 |
.0003 Amp |
60 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
20 |
TSSOP |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
80 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP20/24,.63,20 |
DRAMs |
.5 mm |
70 Cel |
YES |
3-STATE |
1MX1 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G20 |
Not Qualified |
1048576 bit |
e0 |
.0002 Amp |
70 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
20 |
SOJ |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
90 mA |
262144 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ20/26,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX4 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J20 |
Not Qualified |
1048576 bit |
e0 |
.001 Amp |
60 ns |
||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
40 |
ZIP |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
140 mA |
262144 words |
YES |
COMMON |
5 |
5 |
18 |
IN-LINE |
ZIP40,.1 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T40 |
Not Qualified |
4718592 bit |
e0 |
.0003 Amp |
80 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
DIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
280 mA |
1048576 words |
YES |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
DIMM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
DUAL |
R-PDMA-N72 |
25.4 mm |
Not Qualified |
33554432 bit |
.0003 Amp |
70 ns |
||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1020 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
R-PSMA-N72 |
31.75 mm |
Not Qualified |
67108864 bit |
.016 Amp |
60 ns |
||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
44 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
110 mA |
1048576 words |
YES |
COMMON |
5 |
5 |
18 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G44 |
Not Qualified |
18874368 bit |
e0 |
.0004 Amp |
60 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
44 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
150 mA |
1048576 words |
YES |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
YES |
3-STATE |
1MX16 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G44 |
Not Qualified |
16777216 bit |
e0 |
.0004 Amp |
70 ns |
||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
720 mA |
1048576 words |
COMMON |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
1MX8 |
1M |
0 Cel |
SINGLE |
R-PSMA-N30 |
19.9898 mm |
Not Qualified |
8388608 bit |
.008 Amp |
60 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
20 |
TSSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
60 mA |
4194304 words |
NO |
SEPARATE |
3.3 |
3.3 |
1 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP20/26,.36 |
DRAMs |
.635 mm |
70 Cel |
YES |
3-STATE |
4MX1 |
4M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G20 |
Not Qualified |
4194304 bit |
e0 |
.0002 Amp |
80 ns |
||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
28 |
ZIP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
90 mA |
524288 words |
YES |
COMMON |
5 |
5 |
8 |
IN-LINE |
ZIP28,.1 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T28 |
Not Qualified |
4194304 bit |
e0 |
.0003 Amp |
70 ns |
|||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
880 mA |
2097152 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
2MX64 |
2M |
0 Cel |
DUAL |
R-PDMA-N144 |
25.4 mm |
83 MHz |
Not Qualified |
134217728 bit |
.016 Amp |
8 ns |
||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
40 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
70 mA |
262144 words |
NO |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP40/44,.46,32 |
DRAMs |
.8 mm |
70 Cel |
YES |
3-STATE |
256KX16 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G40 |
Not Qualified |
4194304 bit |
e0 |
.0005 Amp |
100 ns |
||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
1024 |
PLASTIC/EPOXY |
NO |
CMOS |
240 mA |
1048576 words |
COMMON |
5 |
5 |
8 |
SIP30,.2 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
1MX8 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
SINGLE |
17.78 mm |
Not Qualified |
8388608 bit |
e0 |
.002 Amp |
60 ns |
||||||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
90 |
LFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
FOUR BANK PAGE BURST |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
4194304 words |
YES |
3.3 |
32 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
.8 mm |
70 Cel |
4MX32 |
4M |
0 Cel |
TIN SILVER COPPER |
BOTTOM |
1 |
R-PBGA-B90 |
3.6 V |
1.45 mm |
10 mm |
Not Qualified |
134217728 bit |
3 V |
AUTO/SELF REFRESH |
e1 |
13 mm |
6 ns |
|||||||||||||||||||||||
Renesas Electronics |
NIBBLE MODE DRAM |
COMMERCIAL |
24 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
16777216 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE, THIN PROFILE |
TSOP24/28,.46 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX1 |
16M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G24 |
Not Qualified |
16777216 bit |
e0 |
70 ns |
||||||||||||||||||||||||||||
Renesas Electronics |
EDO DRAM |
COMMERCIAL |
44 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
140 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G44 |
Not Qualified |
16777216 bit |
e0 |
.0005 Amp |
70 ns |
|||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
5 |
70 Cel |
0 Cel |
5.5 V |
4.5 V |
70 ns |
||||||||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1035 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
31.75 mm |
Not Qualified |
603979776 bit |
.0045 Amp |
60 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1664 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX64 |
1M |
0 Cel |
DUAL |
R-PDMA-N168 |
25.4 mm |
Not Qualified |
67108864 bit |
.08 Amp |
70 ns |
||||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
28 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
100 mA |
524288 words |
NO |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP28,.46 |
DRAMs |
1.27 mm |
70 Cel |
YES |
3-STATE |
512KX8 |
512K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G28 |
Not Qualified |
4194304 bit |
e0 |
.0003 Amp |
60 ns |
||||||||||||||||||||||||
Renesas Electronics |
FAST PAGE DRAM |
COMMERCIAL |
24 |
ZIP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
4194304 words |
NO |
COMMON |
5 |
5 |
4 |
IN-LINE |
ZIP24,.1 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX4 |
4M |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T24 |
Not Qualified |
16777216 bit |
e0 |
60 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1215 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
31.75 mm |
Not Qualified |
603979776 bit |
.0045 Amp |
50 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2475 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
2415919104 bit |
.009 Amp |
6 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
NIBBLE MODE DRAM |
COMMERCIAL |
24 |
SOJ |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
16777216 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ24/28,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX1 |
16M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J24 |
Not Qualified |
16777216 bit |
e0 |
70 ns |
||||||||||||||||||||||||||||
Renesas Electronics |
STATIC COLUMN DRAM |
COMMERCIAL |
20 |
TSSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
80 mA |
4194304 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP20/26,.36 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
4MX1 |
4M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G20 |
Not Qualified |
4194304 bit |
e0 |
.001 Amp |
70 ns |
DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.
DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.
DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.
There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.
One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.