Renesas Electronics DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

MC-42S2000LAB32SA-A70

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

DIMM

2048

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

360 mA

2097152 words

YES

COMMON

3.3

3.3

32

MICROELECTRONIC ASSEMBLY

DIMM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

DUAL

R-PDMA-N72

25.4 mm

Not Qualified

67108864 bit

.0006 Amp

70 ns

UPD42S4400AGS-60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

TSSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

120 mA

1048576 words

YES

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP20/26,.36

DRAMs

.635 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G20

Not Qualified

4194304 bit

e0

.0002 Amp

60 ns

UPD42S4280LE-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

190 mA

262144 words

YES

COMMON

5

5

18

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX18

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J40

Not Qualified

4718592 bit

e0

.0001 Amp

70 ns

UPD42S4190ALE-60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

130 mA

262144 words

YES

COMMON

5

5

18

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX18

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J40

Not Qualified

4718592 bit

e0

.0003 Amp

60 ns

MC-42S2000LAD32SA-A70

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

DIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

281 mA

2097152 words

YES

COMMON

3.3

3.3

32

MICROELECTRONIC ASSEMBLY

DIMM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

DUAL

R-PDMA-N72

25.4 mm

Not Qualified

67108864 bit

.0006 Amp

70 ns

UPD4264800LG-A70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

34

SOJ

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

8388608 words

NO

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ34,.54

DRAMs

1.27 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J34

Not Qualified

67108864 bit

e0

70 ns

UPD424280G5-70-7KF

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

190 mA

262144 words

NO

COMMON

5

5

18

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

YES

3-STATE

256KX18

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4718592 bit

e0

.001 Amp

70 ns

MC-42256AB9BA-10

Renesas Electronics

PAGE MODE DRAM

COMMERCIAL

30

SIMM

256

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

180 mA

262144 words

COMMON

5

5

9

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

256KX9

256K

0 Cel

SINGLE

R-PSMA-N30

16.7894 mm

Not Qualified

2359296 bit

.003 Amp

100 ns

UPD4217160G5M-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

44

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

110 mA

1048576 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

YES

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

16777216 bit

e0

.0004 Amp

70 ns

MC-4516CD64ES-A10BL

Renesas Electronics

SYNCHRONOUS DRAM MODULE

COMMERCIAL

144

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1020 mA

16777216 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM144,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX64

16M

0 Cel

DUAL

R-PDMA-N144

100 MHz

Not Qualified

1073741824 bit

.004 Amp

7 ns

UPD424800V-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

105 mA

524288 words

NO

COMMON

5

5

8

IN-LINE

ZIP28,.1

DRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T28

Not Qualified

4194304 bit

e0

.001 Amp

70 ns

UPD42S4170AG5M-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

90 mA

262144 words

YES

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

YES

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

e0

.0003 Amp

80 ns

UPD488130

Renesas Electronics

RAMBUS DRAM

32

PLASTIC/EPOXY

YES

CMOS

2097152 words

COMMON

5

5

8

SMSIP32,25

DRAMs

2.54 mm

3-STATE

2MX8

2M

Tin/Lead (Sn/Pb)

SINGLE

Not Qualified

16777216 bit

e0

UPD42S4400LV-A70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

70 mA

1048576 words

YES

COMMON

3.3

3.3

4

IN-LINE

ZIP20,.1

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T20

Not Qualified

4194304 bit

e0

.0001 Amp

70 ns

HM51256CP-12

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

18

QCCJ

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

262144 words

5

1

CHIP CARRIER

70 Cel

256KX1

256K

0 Cel

QUAD

1

R-PQCC-J18

5.5 V

262144 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

120 ns

UPD424810AG5-60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

100 mA

524288 words

NO

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSOP28,.46

DRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G28

Not Qualified

4194304 bit

e0

.0003 Amp

60 ns

UPD48288118FF-E33-DW1-A

Renesas Electronics

DDR DRAM

144

TBGA

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

COMMON

1.8

1.8,2.5

18

GRID ARRAY, THIN PROFILE

BGA144,12X18,40/32

DRAMs

1 mm

3-STATE

16MX18

16M

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B144

1.9 V

1.17 mm

300 MHz

11 mm

Not Qualified

301989888 bit

1.7 V

AUTO REFRESH

e1

2,4,8

18.5 mm

.35 ns

UPD42S4440LE-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

80 mA

1048576 words

YES

COMMON

5

5

4

SMALL OUTLINE

SOJ24/26,.4

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

4194304 bit

e0

.0003 Amp

70 ns

UPD488170LG6-A45

Renesas Electronics

RAMBUS DRAM

COMMERCIAL

72

SSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

440 mA

2097152 words

COMMON

3.3

3.3

9

SMALL OUTLINE, SHRINK PITCH

SSOP72,.5

DRAMs

.635 mm

70 Cel

3-STATE

2MX9

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G72

225 MHz

Not Qualified

18874368 bit

e0

.33 Amp

MC-4532DA727EF-A75

Renesas Electronics

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

4540 mA

33554432 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

DUAL

R-PDMA-N168

133 MHz

Not Qualified

2415919104 bit

.086 Amp

5.4 ns

MC-421000A9FA-70

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

30

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

280 mA

1048576 words

COMMON

5

5

9

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

1MX9

1M

0 Cel

SINGLE

R-PSMA-N30

16.6624 mm

Not Qualified

9437184 bit

.003 Amp

70 ns

UPD42S4800LG5-A70-7KD

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

80 mA

524288 words

YES

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP28,.46

DRAMs

1.27 mm

70 Cel

YES

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G28

Not Qualified

4194304 bit

e0

.0001 Amp

70 ns

UPD424190ALE-60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

130 mA

262144 words

NO

COMMON

5

5

18

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX18

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J40

Not Qualified

4718592 bit

e0

.0003 Amp

60 ns

UPD421000GXM-70L

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

TSSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

80 mA

1048576 words

SEPARATE

5

5

1

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP20/24,.63,20

DRAMs

.5 mm

70 Cel

YES

3-STATE

1MX1

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G20

Not Qualified

1048576 bit

e0

.0002 Amp

70 ns

UPD424266LA-60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

90 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

256KX4

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

1048576 bit

e0

.001 Amp

60 ns

UPD42S4280AV-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

ZIP

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

140 mA

262144 words

YES

COMMON

5

5

18

IN-LINE

ZIP40,.1

DRAMs

1.27 mm

70 Cel

3-STATE

256KX18

256K

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T40

Not Qualified

4718592 bit

e0

.0003 Amp

80 ns

MC-42S1000LAD32SA-A70

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

DIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

280 mA

1048576 words

YES

COMMON

3.3

3.3

32

MICROELECTRONIC ASSEMBLY

DIMM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX32

1M

0 Cel

DUAL

R-PDMA-N72

25.4 mm

Not Qualified

33554432 bit

.0003 Amp

70 ns

MC-422000A32FJ-60

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1020 mA

2097152 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

SINGLE

R-PSMA-N72

31.75 mm

Not Qualified

67108864 bit

.016 Amp

60 ns

UPD42S16190G5-60-7JF

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

44

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

110 mA

1048576 words

YES

COMMON

5

5

18

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX18

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

18874368 bit

e0

.0004 Amp

60 ns

UPD42S18170G5-70-7KF

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

150 mA

1048576 words

YES

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

YES

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

16777216 bit

e0

.0004 Amp

70 ns

MC-421000A8B-60

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

30

SIMM

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

720 mA

1048576 words

COMMON

5

5

8

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

SINGLE

R-PSMA-N30

19.9898 mm

Not Qualified

8388608 bit

.008 Amp

60 ns

UPD424100LGSM-A80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

TSSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

60 mA

4194304 words

NO

SEPARATE

3.3

3.3

1

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP20/26,.36

DRAMs

.635 mm

70 Cel

YES

3-STATE

4MX1

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G20

Not Qualified

4194304 bit

e0

.0002 Amp

80 ns

UPD42S4810AV-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

90 mA

524288 words

YES

COMMON

5

5

8

IN-LINE

ZIP28,.1

DRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T28

Not Qualified

4194304 bit

e0

.0003 Amp

70 ns

MC-452AB64S-A12L

Renesas Electronics

SYNCHRONOUS DRAM MODULE

COMMERCIAL

144

DIMM

2048

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

880 mA

2097152 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM144,32

DRAMs

.8 mm

70 Cel

3-STATE

2MX64

2M

0 Cel

DUAL

R-PDMA-N144

25.4 mm

83 MHz

Not Qualified

134217728 bit

.016 Amp

8 ns

UPD424170LG5-A10-7KF

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

70 mA

262144 words

NO

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

YES

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

e0

.0005 Amp

100 ns

MC-421000A8AA-60

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

30

1024

PLASTIC/EPOXY

NO

CMOS

240 mA

1048576 words

COMMON

5

5

8

SIP30,.2

DRAMs

2.54 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

Tin/Lead (Sn/Pb)

SINGLE

17.78 mm

Not Qualified

8388608 bit

e0

.002 Amp

60 ns

HM5212325FBPC-B60

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

90

LFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

4194304 words

YES

3.3

32

GRID ARRAY, LOW PROFILE, FINE PITCH

.8 mm

70 Cel

4MX32

4M

0 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B90

3.6 V

1.45 mm

10 mm

Not Qualified

134217728 bit

3 V

AUTO/SELF REFRESH

e1

13 mm

6 ns

UPD4216101G5-70

Renesas Electronics

NIBBLE MODE DRAM

COMMERCIAL

24

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

16777216 words

SEPARATE

5

5

1

SMALL OUTLINE, THIN PROFILE

TSOP24/28,.46

DRAMs

1.27 mm

70 Cel

3-STATE

16MX1

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G24

Not Qualified

16777216 bit

e0

70 ns

UPD4218165LG5-A70-7JF

Renesas Electronics

EDO DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

140 mA

1048576 words

NO

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

16777216 bit

e0

.0005 Amp

70 ns

UPD42S16400LG3A70-7KD

Renesas Electronics

FAST PAGE DRAM

5

70 Cel

0 Cel

5.5 V

4.5 V

70 ns

MC-428LFF721FB-A60

Renesas Electronics

EDO DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1035 mA

8388608 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

8MX72

8M

0 Cel

DUAL

R-PDMA-N168

31.75 mm

Not Qualified

603979776 bit

.0045 Amp

60 ns

MC-421000AA64FA-70

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

168

DIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1664 mA

1048576 words

NO

COMMON

5

5

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

1MX64

1M

0 Cel

DUAL

R-PDMA-N168

25.4 mm

Not Qualified

67108864 bit

.08 Amp

70 ns

UPD424800AG5M-60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

100 mA

524288 words

NO

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSOP28,.46

DRAMs

1.27 mm

70 Cel

YES

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G28

Not Qualified

4194304 bit

e0

.0003 Amp

60 ns

UPD4216410V-60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

24

ZIP

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

4194304 words

NO

COMMON

5

5

4

IN-LINE

ZIP24,.1

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T24

Not Qualified

16777216 bit

e0

60 ns

MC-428LFC721FH-A50

Renesas Electronics

EDO DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1215 mA

8388608 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

8MX72

8M

0 Cel

DUAL

R-PDMA-N168

31.75 mm

Not Qualified

603979776 bit

.0045 Amp

50 ns

MC-4532CC726F-A10

Renesas Electronics

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

2475 mA

33554432 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

DUAL

R-PDMA-N168

100 MHz

Not Qualified

2415919104 bit

.009 Amp

6 ns

UPD4216101LE-70

Renesas Electronics

NIBBLE MODE DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

16777216 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ24/28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

16MX1

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

16777216 bit

e0

70 ns

UPD424102GS-70

Renesas Electronics

STATIC COLUMN DRAM

COMMERCIAL

20

TSSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

80 mA

4194304 words

SEPARATE

5

5

1

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP20/26,.36

SRAMs

.635 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G20

Not Qualified

4194304 bit

e0

.001 Amp

70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.