Renesas Electronics DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Maximum Access Time
UPD45128441G5-A80L-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		270 mA	33554432 words	1,2,4,8,FP		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	32MX4	32M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			125 MHz	Not Qualified	134217728 bit			e0			.0005 Amp	1,2,4,8	6 ns
UPD41257L-20	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND			262144 words			SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel		3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18				Not Qualified	262144 bit			e0					200 ns
MC-42S1000LAD32SA-60	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	DIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		300 mA	1048576 words		YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	DRAMs	1.27 mm	70 Cel		3-STATE	1MX32	1M	0 Cel		DUAL		R-PDMA-N72		25.4 mm		Not Qualified	33554432 bit						.0003 Amp		60 ns
UPD421000V-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		70 mA	1048576 words			SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit			e0			.001 Amp		80 ns
UPD424170G5-80-7JF	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		105 mA	262144 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40				Not Qualified	4194304 bit			e0			.001 Amp		80 ns
UPD424900LV-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		110 mA	524288 words		NO	COMMON	3.3	3.3	9	IN-LINE	ZIP28,.1	DRAMs	1.27 mm	70 Cel		3-STATE	512KX9	512K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T28				Not Qualified	4718592 bit			e0			.0001 Amp		60 ns
UPD42S17170LG5-A60-7KF	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44				Not Qualified	16777216 bit			e0			.0001 Amp		60 ns
UPD4516421G5A15	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	4MX4	4M	0 Cel		DUAL		R-PDSO-G44			66 MHz	Not Qualified	16777216 bit						.002 Amp	1,2,4,8	14 ns
UPD42S16800LV-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	ZIP	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		80 mA	2097152 words		YES	COMMON	3.3	3.3	8	IN-LINE	ZIP28,.1	DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T28				Not Qualified	16777216 bit			e0			.0001 Amp		60 ns
UPD424410LB-10L	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		80 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.4	DRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20				Not Qualified	4194304 bit			e0			.0003 Amp		100 ns
UPD4216400LLA-A50	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		100 mA	4194304 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	YES	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24				Not Qualified	16777216 bit			e0			.0005 Amp		50 ns
MC-421000A8FA-80	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		180 mA	1048576 words			COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel		3-STATE	1MX8	1M	0 Cel		SINGLE		R-PSMA-N30		16.6624 mm		Not Qualified	8388608 bit						.002 Amp		80 ns
UPD4216405G3-70	Renesas Electronics	EDO DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		80 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24				Not Qualified	16777216 bit			e0			.001 Amp		70 ns
UPD4516161G5-A10-7JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		80 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G50			100 MHz	Not Qualified	16777216 bit			e0			.002 Amp	1,2,4,8	8 ns
UPD4565422G5-A70A-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		120 mA	16777216 words	1,2,4,8,16		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			142.8 MHz	Not Qualified	67108864 bit			e0			.001 Amp	1,2,4,8,16	4.5 ns
MC-458CD641LS-A80	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		880 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel		3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N144		31.75 mm	125 MHz	Not Qualified	536870912 bit						.004 Amp		6 ns
UPD42S4900ALE-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		100 mA	524288 words		YES	COMMON	5	5	9	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	512KX9	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28				Not Qualified	4718592 bit			e0			.0003 Amp		80 ns
UPD4216800G5-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	2097152 words		NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28				Not Qualified	16777216 bit			e0			.001 Amp		60 ns
UPD42S4800G5-10	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		80 mA	524288 words		YES	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28				Not Qualified	4194304 bit			e0			.001 Amp		100 ns
UPD42S16900G5-50-7JD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	32	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	2097152 words		YES	COMMON	5	5	9	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel		3-STATE	2MX9	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32				Not Qualified	18874368 bit			e0			.0004 Amp		50 ns
UPD42S4170LV-A10	Renesas Electronics	FAST PAGE DRAM																		5							70 Cel					0 Cel					5.5 V					4.5 V
MC-421000A9BA-10	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		220 mA	1048576 words			COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel		3-STATE	1MX9	1M	0 Cel		SINGLE		R-PSMA-N30		16.6624 mm		Not Qualified	9437184 bit						.003 Amp		100 ns
UPD45D128442G5-C80-9LG	Renesas Electronics	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		250 mA	33554432 words	2,4,8		COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel		3-STATE	32MX4	32M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G66			125 MHz	Not Qualified	134217728 bit			e0			.01 Amp	2,4,8	.8 ns
MC-421000A36BH-60	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1320 mA	1048576 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	1MX36	1M	0 Cel		SINGLE		R-PSMA-N72		31.75 mm		Not Qualified	37748736 bit						.012 Amp		60 ns
UPD421001C-70	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		80 mA	1048576 words			SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18				Not Qualified	1048576 bit			e0			.001 Amp		70 ns
UPD42S4100ALA-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		100 mA	4194304 words		YES	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20				Not Qualified	4194304 bit			e0			.0002 Amp		70 ns
UPD42S16100LG5-A60-7KD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		80 mA	16777216 words		YES	SEPARATE	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24				Not Qualified	16777216 bit			e0			.00008 Amp		60 ns
MC-4R256CEE6B-745	Renesas Electronics	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			134217728 words			COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm			3-STATE	128MX16	128M			DUAL		R-PDMA-N184			711 MHz	Not Qualified	2147483648 bit
HM5283206FP-12	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		280 mA	262144 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.635 mm	70 Cel		3-STATE	256KX32	256K	0 Cel		QUAD		R-PQFP-G100			83 MHz	Not Qualified	8388608 bit						.003 Amp	1,2,4,8	8 ns
UPD42S17900LG5M-A70	Renesas Electronics	FAST PAGE DRAM																		5							70 Cel					0 Cel					5.5 V					4.5 V							70 ns
UPD42S17900G5-50	Renesas Electronics	FAST PAGE DRAM																		5							70 Cel					0 Cel					5.5 V					4.5 V							50 ns
MC-4516CD64ES-A10B	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1020 mA	16777216 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel		3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N144			100 MHz	Not Qualified	1073741824 bit						.004 Amp		7 ns
UPD48288209AFF-E24-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			33554432 words			COMMON		1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm			3-STATE	32MX9	32M			BOTTOM		R-PBGA-B144			400 MHz	Not Qualified	301989888 bit				NOT SPECIFIED	NOT SPECIFIED		2,4,8
UPD4216900LE-50	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		110 mA	2097152 words		NO	COMMON	5	5	9	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel		3-STATE	2MX9	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32				Not Qualified	18874368 bit			e0			.0004 Amp		50 ns
UPD42S16900G5-70-7JD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	32	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	2097152 words		YES	COMMON	5	5	9	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel		3-STATE	2MX9	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32				Not Qualified	18874368 bit			e0			.0004 Amp		70 ns
UPD424210ALG5-A60	Renesas Electronics	EDO DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		80 mA	262144 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40				Not Qualified	4194304 bit			e0			.0005 Amp		60 ns
HM51256LZP-8	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	16	SIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		1	IN-LINE				70 Cel			256KX1	256K	0 Cel		ZIG-ZAG	1	R-PZIP-T16	5.5 V				262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						85 ns
MC-424256A36FH-80	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		840 mA	262144 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	256KX36	256K	0 Cel		SINGLE		R-PSMA-N72		31.75 mm		Not Qualified	9437184 bit						.012 Amp		80 ns
MC-454BC72F-A10	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1722 mA	4194304 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel		3-STATE	4MX72	4M	0 Cel		DUAL		R-PDMA-N200		38.1 mm	100 MHz	Not Qualified	301989888 bit						.036 Amp		8.5 ns
MC-42256A32BT-10	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		480 mA	262144 words			COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	256KX32	256K	0 Cel		SINGLE		R-PSMA-N72		25.4 mm		Not Qualified	8388608 bit						.008 Amp		100 ns
UPD42S64800LG-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			8388608 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J34				Not Qualified	67108864 bit			e0					70 ns
MC-45V8AB64S-A15L	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		880 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel		3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N144			66 MHz	Not Qualified	536870912 bit						.004 Amp		12 ns
UPD424800LV-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		100 mA	524288 words		NO	COMMON	3.3	3.3	8	IN-LINE	ZIP28,.1	DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T28				Not Qualified	4194304 bit			e0			.0005 Amp		60 ns
UPD42S4400LGS-A10-9KD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		50 mA	1048576 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20				Not Qualified	4194304 bit			e0			.0001 Amp		100 ns
UPD424100V-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		120 mA	4194304 words		NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	4194304 bit			e0			.001 Amp		60 ns
UPD42S16900LG5A70	Renesas Electronics	FAST PAGE DRAM																		5							70 Cel					0 Cel					5.5 V					4.5 V							70 ns
UPD4216400V-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	ZIP	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		70 mA	4194304 words		NO	COMMON	5	5	4	IN-LINE	ZIP24,.1	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T24				Not Qualified	16777216 bit			e0			.001 Amp		80 ns
UPD424256V-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		90 mA	262144 words			COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit			e0			.001 Amp		60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.