Samsung DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4M283233H-FL60T	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		140 mA	4194304 words	1,2,4,8,FP		COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		3-STATE	4MX32	4M	-25 Cel		BOTTOM		R-PBGA-B90				166 MHz		Not Qualified	134217728 bit					.0005 Amp	1,2,4,8		60 ns
KM416S4030AT-G8K	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		200 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54				125 MHz		Not Qualified	67108864 bit			e0		.002 Amp	4,8		6 ns
M312L6420EG0-CB0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4950 mA	67108864 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel		3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		133 MHz		Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH			.38 Amp			.75 ns
KM416C256D-J5	Samsung	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	262144 words		NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J40		5.5 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		.001 Amp		26.04 mm	50 ns
KM44C1000ALP-10	Samsung	FAST PAGE DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	85 mA	1048576 words		NO	COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20		5.5 V	4.65 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		.0002 Amp		24.56 mm	100 ns
KM44C4010ASLSR-6	Samsung	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	80 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	YES	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G24		5.5 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		.0002 Amp		17.14 mm	60 ns
K4B4G0446A-HYF8T	Samsung	DDR3L DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		145 mA	1073741824 words	8		COMMON	1.35	1.35	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel		3-STATE	1GX4	1G	0 Cel		BOTTOM		R-PBGA-B78				533 MHz		Not Qualified	4294967296 bit				260	.015 Amp	8		.3 ns
KMM366F484CS1-5	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	480 mA	4194304 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		3-STATE	4MX64	4M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			.002 Amp			50 ns
KM4132G112Q-8	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel		3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	125 MHz	14 mm	Not Qualified	33554432 bit	3 V		e0		.002 Amp	4,8	20 mm	6 ns
KM416C256ALLTR-7	Samsung	FAST PAGE DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	110 mA	262144 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH	e0		.00015 Amp		18.41 mm	70 ns
K4H560438E-GCB3	Samsung	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	260 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	4	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel		3-STATE	64MX4	64M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60	3	2.7 V	1.2 mm	166 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0	240	.003 Amp	2,4,8	14 mm	.7 ns
M368L6423EUN-LA2	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel			64MX64	64M	0 Cel		DUAL	1	R-XDMA-N184	2	2.7 V				Not Qualified	4294967296 bit	2.3 V	AUTO/SELF REFRESH						.75 ns
KMM3663254AT-G8	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel			32MX64	32M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH						6 ns
K4M51163LC-BG1HT	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		180 mA	33554432 words	1,2,4,8,FP		COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel		3-STATE	32MX16	32M	-25 Cel		BOTTOM		S-PBGA-B54				111 MHz		Not Qualified	536870912 bit					.001 Amp	1,2,4,8		7 ns
M463L0914DT0-CB0	Samsung	DDR DRAM MODULE	COMMERCIAL	172	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	8388608 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM172,20	DRAMs	.5 mm	70 Cel		3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N172		2.7 V		133 MHz		Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH						.75 ns
K4S643234E-TC10	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	125 mA	2097152 words	1,2,4,8,FP	YES	COMMON	2.5	2.5	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20	DRAMs	.5 mm	70 Cel		3-STATE	2MX32	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G86		2.7 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	67108864 bit	2.375 V	AUTO/SELF REFRESH	e0		.0012 Amp	1,2,4,8	22.22 mm	6 ns
M312L3310FTS-LA0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4820 mA	33554432 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel		3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		100 MHz		Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH			.36 Amp			.8 ns
M395T5750CZ4-CE60	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4000 mA	268435456 words			COMMON		1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel		3-STATE	256MX72	256M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			333 MHz		Not Qualified	19327352832 bit			e3
KMM5364005BK/BKG-6	Samsung	EDO DRAM MODULE		72	SIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD			4194304 words				5		36	MICROELECTRONIC ASSEMBLY							4MX36	4M			SINGLE	1	R-XSMA-N72						Not Qualified	150994944 bit								60 ns
KM41C1000CSLTR-6	Samsung	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	70 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSSOP20/26,.36	DRAMs	1.27 mm	70 Cel	YES	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G20		5.5 V	1.2 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		.0001 Amp		17.14 mm	60 ns
KM44C4000C-LK-6	Samsung	FAST PAGE DRAM	COMMERCIAL	24	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words		YES		5		4	SMALL OUTLINE			1.27 mm	70 Cel			4MX4	4M	0 Cel		DUAL	1	R-PDSO-J24		5.5 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH					17.15 mm	60 ns
K4H561638H-ZLCCT	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		350 mA	16777216 words	2,4,8		COMMON	2.6	2.6	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel		3-STATE	16MX16	16M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	268435456 bit			e3		.004 Amp	2,4,8		.65 ns
K4M563233E-MN800	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel			8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.4 mm		11 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH					13 mm	6 ns
K4H510438G-LLB3	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		210 mA	134217728 words	2,4,8		COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel		3-STATE	128MX4	128M	0 Cel	TIN BISMUTH	DUAL		R-PDSO-G66	3			166 MHz		Not Qualified	536870912 bit			e6	260	.005 Amp	2,4,8		.7 ns
KMM5402000BG-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	920 mA	2097152 words			COMMON	5	5	40	MICROELECTRONIC ASSEMBLY	SSIM72	Other Memory ICs	1.27 mm	70 Cel		3-STATE	2MX40	2M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V	25.4 mm			Not Qualified	83886080 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH			.02 Amp			60 ns
KMM5916000AT-8	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	30		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		16777216 words				5		9	MICROELECTRONIC ASSEMBLY				70 Cel		3-STATE	16MX9	16M	0 Cel		SINGLE	1	R-XSMA-N30		5.5 V				Not Qualified	150994944 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						80 ns
K4S561633C-BN75	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	185 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3	3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel		3-STATE	16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54	3	3.6 V	1 mm	133 MHz	8.1 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH		260	.0005 Amp	1,2,4,8	15.1 mm	5.4 ns
KM48V8000J-6	Samsung	FAST PAGE DRAM	COMMERCIAL	34	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J34		3.6 V	3.76 mm		12.7 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		.0005 Amp		22.23 mm	60 ns
K4M51323PC-SF900	Samsung	SYNCHRONOUS DRAM	OTHER	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	150 mA	16777216 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		3-STATE	16MX32	16M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	111 MHz	11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e0		.0003 Amp	1,2,4,8	13 mm	7 ns
KM416C1204AJ-L7	Samsung	EDO DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	150 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel		3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J42		5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0		.0003 Amp		27.31 mm	70 ns
M393T5750EZ3-CD5	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	5060 mA	268435456 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel		3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		267 MHz		Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH		260				.5 ns
KM44V16104CK-45	Samsung	EDO DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	120 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		.0005 Amp		20.96 mm	45 ns
K4B2G0446E-BCK0T	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		140 mA	536870912 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel		3-STATE	512MX4	512M	0 Cel		BOTTOM		R-PBGA-B78				800 MHz		Not Qualified	2147483648 bit					.012 Amp	8		.225 ns
KM416S4030CT-F10T	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54				100 MHz		Not Qualified	67108864 bit			e0		.001 Amp	1,2,4,8		7 ns
KMM364C803CK-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	960 mA	8388608 words			COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N168		5.5 V				Not Qualified	536870912 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			.03 Amp			50 ns
K4F660812C-TL50	Samsung	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	80 mA	8388608 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0		.0002 Amp		20.95 mm	50 ns
KMMR16R86C-RM8	Samsung	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			50331648 words			COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm			3-STATE	48MX16	48M			DUAL		R-PDMA-N184				800 MHz		Not Qualified	805306368 bit
K4D261638F-LC500	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	245 mA	8388608 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	65 Cel		3-STATE	8MX16	8M	0 Cel	TIN BISMUTH	DUAL	1	R-PDSO-G66	3	2.625 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH	e6		.045 Amp	2,4,8	22.22 mm	.7 ns
KM48V2004BK-L7	Samsung	EDO DRAM	COMMERCIAL	28	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	70 mA	2097152 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		3.6 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0		.0003 Amp		18.42 mm	70 ns
M391B5673DZ1-CF8	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2970 mA	268435456 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel		3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240	3	1.575 V		533 MHz		Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH		260	.2 Amp			.3 ns
KMM5916100-8	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	810 mA	16777216 words			COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel		3-STATE	16MX9	16M	0 Cel		SINGLE	1	R-XSMA-N30		5.5 V	22.86 mm			Not Qualified	150994944 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH			.009 Amp			80 ns
KM44C256CSLP-6	Samsung	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	70 mA	262144 words			COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel		3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T20		5.5 V	4.65 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		.0001 Amp		24.56 mm	60 ns
K4B2G1646Q-BMH90	Samsung	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words				1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			128MX16	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		7.5 mm		2147483648 bit	1.283 V	PROGRAMMABLE CAS LATENCY; ALSO OPERATES AT 1.5V NOMINAL SUPPLY	e1				13.3 mm	.255 ns
M312L3223CT0-CA0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3240 mA	33554432 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel		3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		100 MHz		Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH			1.12 Amp			.8 ns
KM44C16100CK	Samsung
KM49V512ALT-7	Samsung	FAST PAGE DRAM	COMMERCIAL	28	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	75 mA	524288 words		NO	COMMON	3.3	3.3	9	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	512KX9	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		3.6 V	1.2 mm		10.16 mm	Not Qualified	4718592 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		.0001 Amp		18.41 mm	70 ns
M383L6420BT0-LB0	Samsung	DDR DRAM MODULE	COMMERCIAL	184			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel			64MX72	64M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH						.75 ns
KM44V16004CK-6TE	Samsung	EDO DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		100 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32						Not Qualified	67108864 bit			e0		.0005 Amp			60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.