Samsung DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4F640411B-TC500	Samsung	FAST PAGE DRAM	COMMERCIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words				5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel			16MX4	16M	0 Cel		DUAL	1	R-PDSO-G32		5.5 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		30	240			20.95 mm	50 ns
M366S0823AT0-C120	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		920 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel		3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N168			25.4 mm	83 MHz		Not Qualified	536870912 bit						.016 Amp			8 ns
KM416V4000AS-L6	Samsung	FAST PAGE DRAM	COMMERCIAL	50	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	140 mA	4194304 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0003 Amp		20.95 mm	60 ns
KMM53232004CV-6	Samsung	EDO DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		33554432 words				5		32	MICROELECTRONIC ASSEMBLY					70 Cel			32MX32	32M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V				Not Qualified	1073741824 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							60 ns
KMM5364003CSW-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	300 mA	4194304 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel		3-STATE	4MX36	4M	0 Cel		DUAL	1	R-XDMA-N72		5.5 V				Not Qualified	150994944 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.003 Amp			60 ns
K4G163222A-QC50	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK, THIN PROFILE				.65 mm	70 Cel			512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	1.2 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						20 mm	4.5 ns
M368L6523BUN-CB3	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3200 mA	67108864 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel		3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N184	2	2.7 V		166 MHz		Not Qualified	4294967296 bit	2.3 V	AUTO/SELF REFRESH				.04 Amp			.7 ns
K4S640432H-UC750	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		4	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel			16MX4	16M	0 Cel	TIN BISMUTH	DUAL	1	R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e6					22.22 mm	5.4 ns
K4H560838D-TLA20	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE				.65 mm	70 Cel			32MX8	32M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0					22.22 mm	.75 ns
KMM53632000CKG-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1344 mA	33554432 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel		3-STATE	32MX36	32M	0 Cel		DUAL	1	R-XDMA-N72		5.5 V				Not Qualified	1207959552 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.024 Amp			50 ns
K4G323222M-PC50	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	290 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9		DRAMs	.65 mm	70 Cel		3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	200 MHz	14 mm	Not Qualified	33554432 bit	3.135 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	4.5 ns
M383L3223AT0-CB0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					70 Cel			32MX72	32M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V				Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH							.75 ns
KMM532512BWG-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		524288 words				5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel		3-STATE	512KX32	512K	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V				Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							70 ns
K4R881869M-NCK7T	Samsung	RAMBUS DRAM		92	FBGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			16777216 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY, FINE PITCH	BGA92,10X18,32		DRAMs	.8 mm			3-STATE	16MX18	16M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B92				711 MHz		Not Qualified	301989888 bit			e0						45 ns
M312L6420CT0-CA2	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	5880 mA	67108864 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		Other Memory ICs	1.27 mm	70 Cel		3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		133 MHz		Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH				1.14 Amp			.75 ns
KM44V1000LTR10	Samsung
K4M56323LG-FG60T	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		180 mA	8388608 words	1,2,4,8,FP		COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32		DRAMs	.8 mm	85 Cel			8MX32	8M	-25 Cel		BOTTOM		R-PBGA-B90	1			167 MHz		Not Qualified	268435456 bit						.001 Amp	1,2,4,8		5.4 ns
KM44C258CVR-6	Samsung	STATIC COLUMN DRAM		20	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	GULL WING			262144 words				5		4	SMALL OUTLINE, THIN PROFILE				.5 mm				256KX4	256K			DUAL	1	R-PDSO-G20			1.2 mm		6 mm	Not Qualified	1048576 bit								14.4 mm	60 ns
KMM377S6428T2-GH	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel			64MX72	64M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	4831838208 bit	3 V	AUTO/SELF REFRESH							6 ns
KM48V514BLLTR-6	Samsung	EDO DRAM	COMMERCIAL	28	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	70 mA	524288 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46		DRAMs	1.27 mm	70 Cel	YES	3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G28		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0001 Amp		18.41 mm	60 ns
KMM59256-12	Samsung	PAGE MODE DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		675 mA	262144 words			COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel		3-STATE	256KX9	256K	0 Cel		SINGLE		R-PSMA-N30			16.51 mm			Not Qualified	2359296 bit									120 ns
KMM374S823DTS-G8	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel			8MX72	8M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	603979776 bit	3 V	AUTO/SELF REFRESH							6 ns
K4H510838B-NCA2	Samsung	DDR1 DRAM	COMMERCIAL	54	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	340 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP54,.46,16		DRAMs	.4 mm	70 Cel		3-STATE	64MX8	64M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0			.005 Amp	2,4,8		.75 ns
K4S560432C-TL7C0	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		3.3		4	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel			64MX4	64M	0 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH						22.22 mm	5.4 ns
K4R881869E-GCN1	Samsung	RAMBUS DRAM		92	FBGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		830 mA	16777216 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY, FINE PITCH	BGA92,10X18,32		DRAMs	.8 mm			3-STATE	16MX18	16M			BOTTOM		R-PBGA-B92	3			1200 MHz		Not Qualified	301989888 bit					260				32 ns
KM41V16000ASR-8	Samsung	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	60 mA	16777216 words		NO	SEPARATE	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36		DRAMs	1.27 mm	70 Cel	YES	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G24		3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		17.14 mm	80 ns
K4T1G084QF-BCF7T	Samsung	DDR2 DRAM		60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		160 mA	134217728 words	4,8		COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32		DRAMs	.8 mm			3-STATE	128MX8	128M			BOTTOM		R-PBGA-B60				400 MHz		Not Qualified	1073741824 bit							4,8		.4 ns
KMM53216004AK-6	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1120 mA	16777216 words			COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel		3-STATE	16MX32	16M	0 Cel		SINGLE		R-PSMA-N72						Not Qualified	536870912 bit						.008 Amp			60 ns
K4M511633C-RL1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		180 mA	33554432 words	1,2,4,8,FP		COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	70 Cel		3-STATE	32MX16	32M	-25 Cel		BOTTOM		S-PBGA-B54				111 MHz		Not Qualified	536870912 bit						.001 Amp	1,2,4,8		7 ns
KM416S4020BT-GLK	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		150 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL		R-PDSO-G54	3			100 MHz		Not Qualified	67108864 bit			e0			.001 Amp	1,2,4,8		6 ns
K4M51163LE-PF1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		280 mA	33554432 words	1,2,4,8,FP		COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	70 Cel		3-STATE	32MX16	32M	-25 Cel		BOTTOM		S-PBGA-B54	3			105 MHz		Not Qualified	536870912 bit					260	.0015 Amp	1,2,4,8		7 ns
K4M56323LD-EU1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	270 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32		DRAMs	.8 mm	85 Cel			8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	2.7 V	1.45 mm	105 MHz	11 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH			260	.0012 Amp	1,2,4,8	13 mm	7 ns
KM44V16004BJ-5	Samsung	EDO DRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		16777216 words				3.3		4	SMALL OUTLINE				1.27 mm	70 Cel			16MX4	16M	0 Cel		DUAL	1	R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	CAS BEFORE RAS/RAS ONLY/HIDDEN REFRESH						20.96 mm	50 ns
KM48V514DT-L7	Samsung	EDO DRAM	COMMERCIAL	28	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	65 mA	524288 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46		DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0001 Amp		18.41 mm	70 ns
KM49C512AT-7	Samsung	FAST PAGE DRAM	COMMERCIAL	28	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	90 mA	524288 words		NO	COMMON	5	5	9	SMALL OUTLINE, THIN PROFILE	TSOP28,.46		DRAMs	1.27 mm	70 Cel		3-STATE	512KX9	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	1.2 mm		10.16 mm	Not Qualified	4718592 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.001 Amp		18.41 mm	70 ns
K4H560438E-ULAA	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46		DRAMs	.65 mm	70 Cel		3-STATE	64MX4	64M	0 Cel		DUAL	1	R-PDSO-G66	3	2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH			260		2,4,8	22.22 mm	.75 ns
M366S1724MT0-C1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1600 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel		3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V		100 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.008 Amp			6 ns
K4T2G044QA-HLE60	Samsung	DDR2 DRAM	OTHER	68	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		320 mA	536870912 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA68,9X19,32		DRAMs	.8 mm	95 Cel		3-STATE	512MX4	512M	0 Cel		BOTTOM		R-PBGA-B68				333 MHz		Not Qualified	2147483648 bit						.008 Amp	4,8		.45 ns
KMM366S823BT-GL	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel			8MX64	8M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH							6 ns
M366S0924CTS-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel			8MX64	8M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH							6 ns
K4R761869A-GCN10	Samsung	RAMBUS DRAM		92	VFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		18	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm				32MX18	32M			BOTTOM	1	R-PBGA-B92		2.63 V	1 mm		13.4 mm	Not Qualified	603979776 bit	2.37 V	SELF CONTAINED REFRESH		NOT SPECIFIED	NOT SPECIFIED			15.1 mm
K4S561632D-NL7C	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	220 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE	TSSOP54,.46,16		DRAMs	.4 mm	70 Cel		3-STATE	16MX16	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V		133 MHz		Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8		5.4 ns
K4H511638B-UCB30	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	405 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46		DRAMs	.65 mm	70 Cel		3-STATE	32MX16	32M	0 Cel		DUAL	1	R-PDSO-G66	2	2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH				.005 Amp	2,4,8	22.22 mm	.7 ns
KMM364E484CS-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	360 mA	4194304 words			COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel		3-STATE	4MX64	4M	0 Cel		DUAL	1	R-XDMA-N168		5.5 V				Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.03 Amp			60 ns
KM48C128J-55	Samsung	FAST PAGE DRAM	COMMERCIAL	24	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	65 mA	131072 words		NO	COMMON	5	5	8	SMALL OUTLINE	SOJ24/26,.34		DRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.76 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		15.88 mm	55 ns
K4S64163LH-BF750	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	70 Cel			4MX16	4M	-25 Cel		BOTTOM	1	S-PBGA-B54	3	2.7 V	1 mm		8 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH						8 mm	5.4 ns
K4S641633H-RN1H0	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel			4MX16	4M	-25 Cel		BOTTOM	1	S-PBGA-B54		3.6 V	1 mm		8 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH		30	240			8 mm	7 ns
K4M51323LE-EC80	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		350 mA	16777216 words	1,2,4,8,FP		COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32		DRAMs	.8 mm	70 Cel		3-STATE	16MX32	16M	-25 Cel		BOTTOM		R-PBGA-B90	3			125 MHz		Not Qualified	536870912 bit					260	.0015 Amp	1,2,4,8		6 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.