Samsung DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
KM44C4100ALLTR-6	Samsung	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	4194304 words		YES	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46		DRAMs	1.27 mm	70 Cel	YES	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G24		5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp		18.41 mm	60 ns
K4F641612D-TC500	Samsung	FAST PAGE DRAM	COMMERCIAL	50	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel			4MX16	4M	0 Cel		DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH		30	240			20.95 mm	50 ns
K4J55323QG-BC160	Samsung	GDDR3 DRAM	OTHER	136	TFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	860 mA	8388608 words	4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA136,12X17,32		DRAMs	.8 mm	85 Cel		3-STATE	8MX32	8M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	2	1.9 V	1.2 mm	600 MHz	11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1			.08 Amp	4,8	14 mm	.29 ns
KM432D2131TQ-G60	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		YES		3.3		32	FLATPACK, THIN PROFILE				.65 mm	65 Cel			2MX32	2M	0 Cel		QUAD	1	R-PQFP-G100		3.465 V	1.2 mm		14 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH						20 mm	5.5 ns
KM432D2131TQ-G80	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		YES		3.3		32	FLATPACK, THIN PROFILE				.65 mm	65 Cel			2MX32	2M	0 Cel		QUAD	1	R-PQFP-G100		3.465 V	1.2 mm		14 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH						20 mm	6 ns
K4D261638F-LC33	Samsung	GDDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		290 mA	8388608 words	2,4,8		COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46		DRAMs	.635 mm	65 Cel		3-STATE	8MX16	8M	0 Cel		DUAL		R-PDSO-G66	3			300 MHz		Not Qualified	134217728 bit					260	.045 Amp	2,4,8		.6 ns
K4M64163PK-BE75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		50 mA	4194304 words	1,2,4,8,FP		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	85 Cel		3-STATE	4MX16	4M	-25 Cel	MATTE TIN	BOTTOM		S-PBGA-B54	1			133 MHz		Not Qualified	67108864 bit			e3			.0003 Amp	1,2,4,8		6 ns
KM4216V258GF-7	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words		YES		3.3		16	SMALL OUTLINE, SHRINK PITCH				.8 mm	70 Cel		3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64		3.6 V	3 mm		11.43 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT						26.03 mm	70 ns
K4H560838E-TLCC	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		310 mA	33554432 words	2,4,8		COMMON	2.6	2.6	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46		DRAMs	.635 mm	70 Cel		3-STATE	32MX8	32M	0 Cel		DUAL		R-PDSO-G66	1			166 MHz		Not Qualified	268435456 bit						.004 Amp	2,4,8		.65 ns
K4E661611D-TC500	Samsung	EDO DRAM	COMMERCIAL	50	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				5		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel			4MX16	4M	0 Cel		DUAL	1	R-PDSO-G50		5.5 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		30	240			20.95 mm	50 ns
KM41C4000DJ-5	Samsung	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	85 mA	4194304 words		NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20		5.5 V	3.76 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		17.15 mm	50 ns
M470T6554BG3-CCC	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1760 mA	67108864 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	95 Cel		3-STATE	64MX64	64M	0 Cel		ZIG-ZAG	1	R-XZMA-N200		1.9 V		200 MHz		Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.064 Amp			.6 ns
K4M51323PC-DE75T	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		150 mA	16777216 words	1,2,4,8,FP		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32		DRAMs	.8 mm	85 Cel		3-STATE	16MX32	16M	-25 Cel	MATTE TIN	BOTTOM		R-PBGA-B90	1			133 MHz		Not Qualified	536870912 bit			e3			.0003 Amp	1,2,4,8		6 ns
M392T2950EZA-CD5	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3950 mA	134217728 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		Other Memory ICs	1 mm	95 Cel		3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240	2	1.9 V		267 MHz		Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH				.664 Amp			.5 ns
K4R881869E-FCM80	Samsung	RAMBUS DRAM		92	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm				16MX18	16M			BOTTOM	1	R-PBGA-B92		2.63 V	1 mm		9.3 mm	Not Qualified	301989888 bit	2.37 V	AUTO/SELF REFRESH						15.1 mm
K4G163222A-QC55	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK, THIN PROFILE				.65 mm	70 Cel			512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	1.2 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						20 mm	5 ns
K4T1G084QC-ZCE6	Samsung	DDR2 DRAM		60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			134217728 words	4,8		COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32		DRAMs	.8 mm			3-STATE	128MX8	128M		TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3			333 MHz		Not Qualified	1073741824 bit			e1		260		4,8		.45 ns
KM48V8004BK-4	Samsung	EDO DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		140 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44		DRAMs	1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL		R-PDSO-J32	3					Not Qualified	67108864 bit			e0			.0005 Amp			40 ns
KM44C16104AS-6	Samsung	EDO DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	140 mA	16777216 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		20.95 mm	60 ns
KM49V512AJ-8	Samsung	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	70 mA	524288 words		NO	COMMON	3.3	3.3	9	SMALL OUTLINE	SOJ28,.44		DRAMs	1.27 mm	70 Cel		3-STATE	512KX9	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		3.6 V	3.76 mm		10.16 mm	Not Qualified	4718592 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.0005 Amp		18.42 mm	80 ns
K4S64163LF-AS15	Samsung	SYNCHRONOUS DRAM	OTHER	52	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	80 mA	4194304 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA52,6X13,30		DRAMs	.75 mm	85 Cel		3-STATE	4MX16	4M	-25 Cel		BOTTOM	1	R-PBGA-B52	3	2.7 V	1 mm	66 MHz	6.6 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH			260	.0005 Amp	1,2,4,8	11 mm	9 ns
K4S643233H-FF1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2097152 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	70 Cel			2MX32	2M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH		30	240			13 mm	7 ns
K4Y50024UE-JCA20	Samsung	RAMBUS DRAM	OTHER	100	TFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS	710 mA	268435456 words		YES	COMMON	1.8	1.8	2	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,50/32		DRAMs	.8 mm	100 Cel		3-STATE	256MX2	256M	0 Cel		BOTTOM	1	R-PBGA-B100		1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.04 Amp		14.5 mm	36 ns
KMM5364100AK-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words				5		36	MICROELECTRONIC ASSEMBLY		18			70 Cel		3-STATE	4MX36	4M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V				Not Qualified	150994944 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							60 ns
KMM5328104CK-5	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	896 mA	8388608 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel		3-STATE	8MX32	8M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V	25.4 mm			Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.016 Amp			50 ns
K4S643232F-TC70	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	140 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20		DRAMs	.5 mm	70 Cel		3-STATE	2MX32	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	22.22 mm	5.5 ns
KMM372V3280AS-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2800 mA	33554432 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	36	Other Memory ICs	1.27 mm	70 Cel		3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V	59.69 mm			Not Qualified	2415919104 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.03 Amp			50 ns
K4F160812C-BC60	Samsung	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	100 mA	2097152 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34		DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		3.6 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		18.42 mm	60 ns
M471B5673DZ1-CF8	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2360 mA	268435456 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24		DRAMs	.6 mm	85 Cel		3-STATE	256MX64	256M	0 Cel		DUAL	1	R-XDMA-N204	3	1.575 V		533 MHz		Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH			260	.176 Amp
KMM372E1600BS-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1980 mA	16777216 words			COMMON	5	5	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel		3-STATE	16MX72	16M	0 Cel		DUAL	1	R-XDMA-N168		5.5 V	31.75 mm			Not Qualified	1207959552 bit	4.5 V	RAS ONLY/HIDDEN REFRESH; CAS BEFORE RAS REFRESH				.03 Amp			60 ns
M53640404AZ0-C600	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		360 mA	4194304 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel		3-STATE	4MX36	4M	0 Cel		SINGLE		R-PSMA-N72						Not Qualified	150994944 bit						.003 Amp			60 ns
K4F640812D-JL600	Samsung	FAST PAGE DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	100 mA	8388608 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44		DRAMs	1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel		DUAL	1	R-PDSO-J32	1	3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH				.001 Amp		20.96 mm	60 ns
K4H280838C-TLA20	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		350 mA	16777216 words	2,4,8		COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46		DRAMs	.635 mm	70 Cel		3-STATE	16MX8	16M	0 Cel		DUAL		R-PDSO-G66	3			133 MHz		Not Qualified	134217728 bit					240	.004 Amp	2,4,8		.75 ns
KMM366S424AT-G8	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		740 mA	4194304 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel		3-STATE	4MX64	4M	0 Cel		DUAL		R-PDMA-N168				125 MHz		Not Qualified	268435456 bit						.008 Amp			6 ns
K4J52324QH-HC140	Samsung	GDDR3 DRAM	OTHER	136	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	750 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA136,12X17,32		DRAMs	.8 mm	85 Cel		3-STATE	16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	3	1.9 V	1.2 mm	700 MHz	10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.07 Amp	4,8	14 mm	.26 ns
K4H1G0838M-UCA20	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE				.65 mm	70 Cel			128MX8	128M	0 Cel		DUAL	1	R-PDSO-G66	2	2.7 V	1.2 mm		10.16 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.75 ns
KM48C2000AT-8	Samsung	FAST PAGE DRAM	COMMERCIAL	28	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	60 mA	2097152 words		NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46		DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G28		5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		18.41 mm	80 ns
K4F661612C-TL60	Samsung	FAST PAGE DRAM	COMMERCIAL	50	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel			4MX16	4M	0 Cel		DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH						20.95 mm	60 ns
KM416V4104CS-L5TH	Samsung	EDO DRAM	COMMERCIAL	50	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		120 mA	4194304 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G50						Not Qualified	67108864 bit			e0			.0002 Amp			50 ns
KM48C514DT-L6	Samsung	EDO DRAM	COMMERCIAL	28	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	70 mA	524288 words		YES	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46		DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.00015 Amp		18.41 mm	60 ns
K4F660811B-JC45	Samsung	FAST PAGE DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	100 mA	8388608 words		NO	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44		DRAMs	1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		5.5 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		20.96 mm	45 ns
K4T51083QI-HCF7	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		128 mA	67108864 words	4,8		COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32		DRAMs	.8 mm	95 Cel		3-STATE	64MX8	64M	0 Cel		BOTTOM		R-PBGA-B60	3			400 MHz		Not Qualified	536870912 bit					260	.008 Amp	4,8		.4 ns
KM4216V256G-8	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	110 mA	262144 words				3.3	3.3	16	SMALL OUTLINE, SHRINK PITCH	SOP64,.54,32		Other Memory ICs	.8 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64		3.6 V	3 mm		11.43 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT	e0			.01 Amp		26.03 mm	80 ns
KMM5322000CVG-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words				5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel		3-STATE	2MX32	2M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V				Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							60 ns
KM41C16002AS-8	Samsung	STATIC COLUMN DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	GULL WING	ASYNCHRONOUS	60 mA	16777216 words		NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36		SRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G24		5.5 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		17.14 mm	80 ns
K4D551638F-TC33	Samsung	GDDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		520 mA	16777216 words	2,4,8		COMMON	2.8	2.8	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46		DRAMs	.635 mm	65 Cel		3-STATE	16MX16	16M	0 Cel		DUAL		R-PDSO-G66	1			300 MHz		Not Qualified	268435456 bit							2,4,8
KM44V4104ALSR-7	Samsung	EDO DRAM	COMMERCIAL	24	TSOP2-R	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	90 mA	4194304 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36		DRAMs	1.27 mm	70 Cel	YES	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G24		3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0003 Amp		17.14 mm	70 ns
KM44C16100AS-5	Samsung	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	150 mA	16777216 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		20.95 mm	50 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.