Samsung DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4S510832B-KL1H	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	225 mA	67108864 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	64MX8	64M	0 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.004 Amp	1,2,4,8	22.22 mm	6 ns
K4S643233H-HN1H0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2097152 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel			2MX32	2M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3	3.6 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH	e1					13 mm	7 ns
M393A2K43BB1-CRC	Samsung	DDR DRAM MODULE	OTHER	288	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2540 mA	2147483648 words		YES	COMMON	1.2	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		Other Memory ICs	.85 mm	85 Cel		3-STATE	2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.25 mm	1200 MHz	3.9 mm	Not Qualified	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED			133.35 mm	.175 ns
K4M513233E-MC1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		300 mA	16777216 words	1,2,4,8,FP		COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32		DRAMs	.8 mm	70 Cel		3-STATE	16MX32	16M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B90				105 MHz		Not Qualified	536870912 bit			e0			.0015 Amp	1,2,4,8		7 ns
K4S560832E-UL750	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel			32MX8	32M	0 Cel	TIN BISMUTH	DUAL	1	R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e6					22.22 mm	5.4 ns
KM44C268CVR-8	Samsung	STATIC COLUMN DRAM		20	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	GULL WING			262144 words				5		4	SMALL OUTLINE, THIN PROFILE				.5 mm				256KX4	256K			DUAL	1	R-PDSO-G20			1.2 mm		6 mm	Not Qualified	1048576 bit								14.4 mm	80 ns
K4E660812C-JC45	Samsung	EDO DRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		8388608 words				3.3		8	SMALL OUTLINE				1.27 mm	70 Cel			8MX8	8M	0 Cel		DUAL	1	R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						20.96 mm	45 ns
K4M64163LK-RN750	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	115 mA	4194304 words	1,2,4,8,FP	YES	COMMON	2.5	2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	85 Cel		3-STATE	4MX16	4M	-25 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B54	3	2.7 V	1 mm	133 MHz	8 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH	e0		240	.0005 Amp	1,2,4,8	8 mm	5.4 ns
K4M561633G-RN1HT	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	85 Cel		3-STATE	16MX16	16M	-25 Cel	MATTE TIN	BOTTOM	1	R-PBGA-B54	1	3.6 V	1 mm	111 MHz	8 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH	e3			.001 Amp	1,2,4,8	11 mm	7 ns
K4H561638F-GCCC0	Samsung	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.6		16	GRID ARRAY, THIN PROFILE				1 mm	70 Cel			16MX16	16M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH	e0					14 mm	.65 ns
K4H280838C-TCA2	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	350 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46		DRAMs	.65 mm	70 Cel		3-STATE	16MX8	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0			.004 Amp	2,4,8	22.22 mm	.75 ns
K4H560838F-TLB0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		250 mA	33554432 words	2,4,8		COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46		DRAMs	.635 mm	70 Cel		3-STATE	32MX8	32M	0 Cel	TIN LEAD	DUAL		R-PDSO-G66				133 MHz		Not Qualified	268435456 bit			e0			.003 Amp	2,4,8		.75 ns
KMM5402000AM-8	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words				5		40	MICROELECTRONIC ASSEMBLY					70 Cel			2MX40	2M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V				Not Qualified	83886080 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH							80 ns
KM41V4000BLVR-8	Samsung	FAST PAGE DRAM	COMMERCIAL	20	TSOP1-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	55 mA	4194304 words		NO	SEPARATE	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSSOP20/24,.63,20		DRAMs	.5 mm	70 Cel	YES	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G20		3.6 V	1.2 mm		6 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.00005 Amp		14.4 mm	80 ns
K4F640412C-JL60	Samsung	FAST PAGE DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	100 mA	16777216 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44		DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.0002 Amp		20.96 mm	60 ns
KM44C4004ALLTR-5	Samsung	EDO DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	4194304 words		YES	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46		DRAMs	1.27 mm	70 Cel	YES	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G24		5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp		18.41 mm	50 ns
K4B2G0846C-HCK0	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		215 mA	268435456 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel		3-STATE	256MX8	256M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B78	3			800 MHz		Not Qualified	2147483648 bit			e1		260	.012 Amp	8
K4H510838F-LIB30	Samsung	DDR1 DRAM	INDUSTRIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		360 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46		DRAMs	.635 mm	85 Cel		3-STATE	64MX8	64M	-40 Cel		DUAL		R-PDSO-G66				166 MHz		Not Qualified	536870912 bit						.005 Amp	2,4,8		.7 ns
K4E641611D-TC50	Samsung	EDO DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	4194304 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G50		5.5 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		20.95 mm	50 ns
K4M51163PC-RF75T	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		150 mA	33554432 words	1,2,4,8,FP		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32		DRAMs	.8 mm	70 Cel		3-STATE	32MX16	32M	-25 Cel		BOTTOM		S-PBGA-B54	1			133 MHz		Not Qualified	536870912 bit						.0003 Amp	1,2,4,8		6 ns
M395T5166AZ4-CD50	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			536870912 words			COMMON		1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		Other Memory ICs	1 mm	85 Cel		3-STATE	512MX72	512M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1					Not Qualified	38654705664 bit			e3
KMMR18R84C-RG6	Samsung	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			33554432 words			COMMON		1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40		DRAMs	1 mm			3-STATE	32MX18	32M			DUAL		R-PDMA-N184				600 MHz		Not Qualified	603979776 bit									53 ns
M470L1714ET0-LA2	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1880 mA	16777216 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel		3-STATE	16MX64	16M	0 Cel		ZIG-ZAG	1	R-XZMA-N200	1	2.7 V		133 MHz		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH				.024 Amp			.75 ns
KMM591000AN-10	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	230 mA	1048576 words			COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel		3-STATE	1MX9	1M	0 Cel		SINGLE	1	R-XSMA-N30		5.5 V	16.51 mm			Not Qualified	9437184 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH				.003 Amp			100 ns
M383L1713BT0-CA2	Samsung	DDR DRAM MODULE	COMMERCIAL	184			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					70 Cel			32MX72	32M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V				Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH							.75 ns
K4S64163LH-BL1H0	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	70 Cel			4MX16	4M	-25 Cel		BOTTOM	1	S-PBGA-B54	3	2.7 V	1 mm		8 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH						8 mm	7 ns
KMM372C404BS-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	720 mA	4194304 words			COMMON	5	5	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel		3-STATE	4MX72	4M	0 Cel		DUAL	1	R-XDMA-N168		5.5 V	25.4 mm			Not Qualified	301989888 bit	4.5 V	RAS ONLY/HIDDEN REFRESH; CAS BEFORE RAS REFRESH				.03 Amp			50 ns
K4H561638J-LPB3	Samsung	DDR1 DRAM	INDUSTRIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		270 mA	16777216 words	2,4,8		COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46		DRAMs	.635 mm	85 Cel		3-STATE	16MX16	16M	-40 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			167 MHz		Not Qualified	268435456 bit			e3			.003 Amp	2,4,8		.7 ns
K4A8G045WC-BCPB0	Samsung	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words		YES		1.2		4	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel			2GX4	2G	0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH						11 mm
M372V1680BB0-C600	Samsung		COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1440 mA	16777216 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel		3-STATE	16MX72	16M	0 Cel		DUAL		R-PDMA-N168			31.75 mm			Not Qualified	1207959552 bit						.03 Amp			60 ns
K4T1G164QG-BCF70	Samsung	DDR2 DRAM		84	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	150 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,9X15,32		DRAMs	.8 mm			3-STATE	64MX16	64M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	3	1.9 V	1 mm	400 MHz	7.5 mm	Not Qualified	1073741824 bit	1.7 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	e1		260	.01 Amp	4,8	12.5 mm	.4 ns
KM432S2030CT-F10	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	150 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20		DRAMs	.5 mm	70 Cel		3-STATE	2MX32	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	22.22 mm	6 ns
KM44C16004BS-6K	Samsung	EDO DRAM	COMMERCIAL	32	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	16777216 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32						Not Qualified	67108864 bit			e0			.001 Amp			60 ns
K4T56163QI-ZCD50	Samsung	SYNCHRONOUS DRAM		84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm				16MX16	16M			BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		9 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm	.5 ns
KMM466S424CT-F00	Samsung	DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4194304 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				.8 mm	70 Cel			4MX64	4M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V	25.53 mm		3.81 mm		268435456 bit	3 V	AUTO/SELF REFRESH; WD-MAX						67.6 mm
KMM5362203C2W-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	361 mA	2097152 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel		3-STATE	2MX36	2M	0 Cel		DUAL	1	R-XDMA-N72		5.5 V	19.05 mm			Not Qualified	75497472 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.006 Amp			60 ns
M832G0115AP0-C7C	Samsung	SYNCHRONOUS GRAPHICS RAM MODULE	COMMERCIAL	132	DIMM	2048	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	290 mA	1048576 words		YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM132		DRAMs	1.27 mm	70 Cel		3-STATE	1MX32	1M	0 Cel		DUAL	1	R-XDMA-N132		3.6 V		133 MHz		Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH				.002 Amp			6 ns
M393B5273CH0-YF8	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2340 mA	536870912 words		YES	COMMON	1.5	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		Other Memory ICs	1 mm	85 Cel		3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	533 MHz		Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH			260	.786 Amp		133.35 mm	.3 ns
MR18R0828BN1-CK7	Samsung	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40		DRAMs	1 mm			3-STATE	64MX18	64M			DUAL	1	R-XDMA-N184		2.63 V		711 MHz		Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH							45 ns
KM44C1004CSLP-8	Samsung	EDO DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	55 mA	1048576 words		NO	COMMON	5	5	4	IN-LINE	DIP20,.3		DRAMs	2.54 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T20		5.5 V	4.65 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0001 Amp		24.56 mm	80 ns
KM416C4000CS-6	Samsung	FAST PAGE DRAM	COMMERCIAL	50	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		80 mA	4194304 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G50						Not Qualified	67108864 bit			e0			.001 Amp			60 ns
K4E660812B-TC600	Samsung	EDO DRAM	COMMERCIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		8388608 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel			8MX8	8M	0 Cel		DUAL	1	R-PDSO-G32		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH		30	240			20.95 mm	65 ns
KMM5324000AV-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words				5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel		3-STATE	4MX32	4M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V				Not Qualified	134217728 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							60 ns
KM416V1204CT-5	Samsung	EDO DRAM	COMMERCIAL	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	140 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		20.95 mm	50 ns
K4E641612D-TP60T	Samsung	EDO DRAM	INDUSTRIAL	50	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	4194304 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	85 Cel		3-STATE	4MX16	4M	-40 Cel	TIN LEAD	DUAL		R-PDSO-G50						Not Qualified	67108864 bit			e0			.0002 Amp			60 ns
K4T51043QG-HLD5T	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		175 mA	134217728 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32		DRAMs	.8 mm	95 Cel		3-STATE	128MX4	128M	0 Cel		BOTTOM		R-PBGA-B60				267 MHz		Not Qualified	536870912 bit						.0045 Amp	4,8		.5 ns
KMM372V404BS-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	600 mA	4194304 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel		3-STATE	4MX72	4M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V	25.4 mm			Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.03 Amp			60 ns
K4E641612B-TC60M0	Samsung	EDO DRAM	COMMERCIAL	50	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G50						Not Qualified	67108864 bit			e0			.0005 Amp			60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.