Samsung DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4T51043QG-HLE6	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		175 mA	134217728 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel		3-STATE	128MX4	128M	0 Cel		BOTTOM		R-PBGA-B60				333 MHz		Not Qualified	536870912 bit						.005 Amp	4,8		.45 ns
M372V1680CJ0-C50	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1980 mA	16777216 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel		3-STATE	16MX72	16M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V	31.75 mm			Not Qualified	1207959552 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.03 Amp			50 ns
K4E641612C-TL45	Samsung	EDO DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	130 mA	4194304 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.0002 Amp		20.95 mm	45 ns
M470T2863EH3-LE7	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	792 mA	134217728 words		YES	COMMON	1.8	1.8	8	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel		3-STATE	128MX8	128M	0 Cel		ZIG-ZAG	1	R-XZMA-N200	3	1.9 V	30.15 mm	400 MHz	3.8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH			260			67.6 mm	.4 ns
KM44C4000ASLS-8	Samsung	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	60 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G24		5.5 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp		17.14 mm	80 ns
M470L1714BT0-LA2	Samsung	DDR1 DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1820 mA	16777216 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel		3-STATE	16MX64	16M	0 Cel		ZIG-ZAG	1	R-XZMA-N200	1	2.7 V		133 MHz		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH				.34 Amp			.75 ns
K4S561632J-UP750	Samsung	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	180 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel		3-STATE	16MX16	16M	-40 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	1,2,4,8	22.22 mm	5.4 ns
M53620400DB0-60	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		720 mA	4194304 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	4MX36	4M	0 Cel		SINGLE		R-PSMA-N72						Not Qualified	150994944 bit						.009 Amp			60 ns
K4E171612C-TC45	Samsung	EDO DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.0005 Amp		20.95 mm	45 ns
KM44C4103ALTR-5	Samsung	FAST PAGE DRAM	COMMERCIAL	28	TSOP2-R	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	110 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G28		5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0003 Amp		18.41 mm	50 ns
KM44V16004AK-L6	Samsung	EDO DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	140 mA	16777216 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0003 Amp		20.96 mm	60 ns
KM48V8100BK-6	Samsung	FAST PAGE DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		20.96 mm	60 ns
KM41C16002ALK-6	Samsung	STATIC COLUMN DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	J BEND	ASYNCHRONOUS	80 mA	16777216 words		NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24/26,.34	SRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J24		5.5 V	3.68 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		17.145 mm	60 ns
K4S641632N-LL600	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	120 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	0 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	1,2,4,8	22.22 mm	5 ns
KM48C2004ASLJ-5	Samsung	EDO DRAM	COMMERCIAL	28	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	100 mA	2097152 words		NO	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J28		5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp		18.42 mm	50 ns
K4H511638D-UPB0	Samsung	DDR1 DRAM	INDUSTRIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		345 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	85 Cel		3-STATE	32MX16	32M	-40 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			133 MHz		Not Qualified	536870912 bit			e3			.005 Amp	2,4,8		.75 ns
KM44C1010BTR-7	Samsung	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	80 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSSOP20/26,.36	DRAMs	1.27 mm	70 Cel	YES	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G20		5.5 V	1.2 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.001 Amp		17.14 mm	70 ns
KM44C4102AK-8	Samsung	STATIC COLUMN DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	J BEND	ASYNCHRONOUS	80 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34	SRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J24		5.5 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		17.145 mm	80 ns
K4J52324KI-HC7A	Samsung	GDDR3 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		760 mA	16777216 words	4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel		3-STATE	16MX32	16M	0 Cel		BOTTOM		R-PBGA-B136				1300 MHz		Not Qualified	536870912 bit					260	.095 Amp			.18 ns
K4J55323QG-BC14	Samsung	DDR3 DRAM	OTHER	136	TFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	935 mA	8388608 words	4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel		3-STATE	8MX32	8M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	3	1.9 V	1.2 mm	700 MHz	11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.09 Amp	4,8	14 mm	.26 ns
K4M51163LC-BF75T	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		180 mA	33554432 words	1,2,4,8,FP		COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel		3-STATE	32MX16	32M	-25 Cel		BOTTOM		S-PBGA-B54				133 MHz		Not Qualified	536870912 bit						.001 Amp	1,2,4,8		5.4 ns
M391T5663QZ3-CF7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2565 mA	268435456 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel		3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		400 MHz		Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH			260	.27 Amp			.4 ns
K4E151611D-JC45T	Samsung	EDO DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		150 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel		3-STATE	1MX16	1M	0 Cel		DUAL		R-PDSO-J42						Not Qualified	16777216 bit						.001 Amp			45 ns
M383L3310BT1-CA0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel		3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		125 MHz		Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH							.8 ns
KM48V512BLJ-6	Samsung	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	70 mA	524288 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		3.6 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0001 Amp		18.42 mm	60 ns
KM416C1200AR-L6	Samsung	FAST PAGE DRAM	COMMERCIAL	44	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	160 mA	1048576 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0002 Amp		20.95 mm	60 ns
KM44C1004CLT-8	Samsung	EDO DRAM	COMMERCIAL	20	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	55 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSSOP20/26,.36	DRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G20		5.5 V	1.2 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0002 Amp		17.14 mm	80 ns
KM48S8030BT-G10TH	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		135 mA	8388608 words	1,2,4,8,FP		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL		R-PDSO-G54	3			100 MHz		Not Qualified	67108864 bit			e0			.001 Amp	1,2,4,8		7 ns
KM44C258AZ-12	Samsung	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		55 mA	262144 words			COMMON	5	5	4	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	0 Cel	TIN LEAD	ZIG-ZAG		R-PZIP-T20	3					Not Qualified	1048576 bit			e0			.001 Amp			120 ns
KM41C1000CP-7	Samsung	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	65 mA	1048576 words			SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T18		5.5 V	4.65 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		22.02 mm	70 ns
K4M28323LH-FN75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		130 mA	4194304 words	1,2,4,8,FP		COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		3-STATE	4MX32	4M	-25 Cel		BOTTOM		R-PBGA-B90				133 MHz		Not Qualified	134217728 bit						.0005 Amp	1,2,4,8		5.4 ns
K4T51083QE-ZCD5T	Samsung	DDR2 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		180 mA	67108864 words	4,8		COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel		3-STATE	64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3			266 MHz		Not Qualified	536870912 bit			e1		260	.008 Amp	4,8		.5 ns
M378T5663AZ3-CE600	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2760 mA	268435456 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel		3-STATE	256MX64	256M	0 Cel		DUAL		R-PDMA-N240				333 MHz		Not Qualified	17179869184 bit						.24 Amp			.45 ns
K4S513233F-MC75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		300 mA	16777216 words	1,2,4,8,FP		COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		3-STATE	16MX32	16M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B90				133 MHz		Not Qualified	536870912 bit			e0			.001 Amp	1,2,4,8		5.4 ns
K4S64163LH-BN1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		100 mA	4194304 words	1,2,4,8,FP		COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel		3-STATE	4MX16	4M	-25 Cel		BOTTOM		S-PBGA-B54				105 MHz		Not Qualified	67108864 bit						.0005 Amp	1,2,4,8		7 ns
KMM366S824BT-GL	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V	35.052 mm	100 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.008 Amp			6 ns
K4F151612D-J60	Samsung
KM44V16000CK-L5	Samsung	FAST PAGE DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	16777216 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	CAS BEFORE RAS/RAS ONLY/HIDDEN/SELF REFRESH	e0			.0002 Amp		20.96 mm	50 ns
M393T6553CZ0-CD5000	Samsung	DDR DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY							64MX72	64M			DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH							.5 ns
KMM5328004BSW-6	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	224 mA	8388608 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	8MX32	8M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V				Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.004 Amp			60 ns
KM44C1000ATR-10	Samsung	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	85 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSSOP20/26,.36	DRAMs	1.27 mm	70 Cel	YES	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G20		5.5 V	1.2 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		17.14 mm	100 ns
K4D263238E-VC2A	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	935 mA	4194304 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel		3-STATE	4MX32	4M	0 Cel		BOTTOM	1	S-PBGA-B144	3	2.625 V	1.4 mm	350 MHz	12 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH			260	.095 Amp	2,4,8	12 mm	.55 ns
M470L3223DT0-CA0	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1880 mA	33554432 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel		3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N200	1	2.7 V		100 MHz		Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH							.8 ns
K4E661612E-TI45	Samsung	EDO DRAM	INDUSTRIAL	50	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			4MX16	4M	-40 Cel		DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						20.95 mm	45 ns
M53233200BE0-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	896 mA	33554432 words			COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	32MX32	32M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V				Not Qualified	1073741824 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.016 Amp			60 ns
KM44C4010ASLS-5	Samsung	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	90 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G24		5.5 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0002 Amp		17.14 mm	50 ns
K4E640411D-JC60	Samsung	EDO DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	16777216 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J32		5.5 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		20.96 mm	60 ns
K4E640412B-JL50	Samsung	EDO DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	120 mA	16777216 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.0003 Amp		20.96 mm	50 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.