Samsung DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
KM48V8100R-F5	Samsung	FAST PAGE DRAM	COMMERCIAL	32	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		8388608 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel		DUAL	1	R-PDSO-G32		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH						20.95 mm	50 ns
K4T1G044QF-BCF7T	Samsung	DDR2 DRAM		60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		156 mA	268435456 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm		3-STATE	256MX4	256M			BOTTOM		R-PBGA-B60				400 MHz		Not Qualified	1073741824 bit							4,8		.4 ns
K4F660812D-JP500	Samsung	FAST PAGE DRAM	INDUSTRIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		110 mA	8388608 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL		R-PDSO-J32						Not Qualified	67108864 bit						.0002 Amp			50 ns
M383L3223DTS-LB0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3470 mA	33554432 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		133 MHz		Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH				1.12 Amp			.75 ns
M366S1654CTS-C1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	760 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V		100 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.008 Amp			6 ns
K4S641632K-UP600	Samsung	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		4MX16	4M	-40 Cel		DUAL	1	R-PDSO-G54	2	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH						22.22 mm	5 ns
M366S1623AT0-C120	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1160 mA	16777216 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N168				83 MHz		Not Qualified	1073741824 bit						.032 Amp			8 ns
K4F160812D-BL50	Samsung	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	2097152 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		3.6 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.0002 Amp		18.42 mm	50 ns
M470T6464AZ3-LE6	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1400 mA	67108864 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	64MX64	64M	0 Cel		ZIG-ZAG	1	R-XZMA-N200	2	1.9 V		333 MHz		Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH				.032 Amp			.45 ns
KM48C2000ALT-6	Samsung	FAST PAGE DRAM	COMMERCIAL	28	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	80 mA	2097152 words		NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G28		5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0003 Amp		18.41 mm	60 ns
KMM5321200AWG-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	300 mA	1048576 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V	19.05 mm			Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.002 Amp			70 ns
K4H511638B-ZLB0	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		360 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM		R-PBGA-B60	3			133 MHz		Not Qualified	536870912 bit					260	.005 Amp	2,4,8		.75 ns
K4F640412C-TC45	Samsung	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		20.95 mm	45 ns
K4H511638G-HLB3	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		230 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			166 MHz		Not Qualified	536870912 bit			e3			.005 Amp	2,4,8		.7 ns
K4S640432D-TL80	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	135 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	6 ns
M368L6523CUS-CB0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2600 mA	67108864 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V		133 MHz		Not Qualified	4294967296 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.04 Amp			.75 ns
M378T3354BZ0-CCC	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1500 mA	33554432 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	32MX64	32M	0 Cel	TIN SILVER COPPER	DUAL	1	R-XDMA-N240	3	1.9 V		200 MHz		Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1		260				.6 ns
K4S563233F-FN1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		3		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH		30	240			13 mm	7 ns
KMM366S213DTS-GH	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2097152 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		2MX64	2M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH							6 ns
M393T2950BG0-LE6	Samsung	DDR DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY						128MX72	128M			DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	9663676416 bit	1.7 V	SELF CONTAINED REFRESH		30	230				.45 ns
MR18R082CAN1-CK7	Samsung	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		100663296 words		YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	96MX18	96M			DUAL	1	R-XDMA-N184		2.63 V		711 MHz		Not Qualified	1811939328 bit	2.37 V	SELF CONTAINED REFRESH							45 ns
K4S56163LF-XE1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		150 mA	16777216 words	1,2,4,8,FP		COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		S-PBGA-B54				105 MHz		Not Qualified	268435456 bit			e0			.0005 Amp	1,2,4,8		7 ns
KMM366S104CT-GH0	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED		NO	1	CMOS	NO LEAD	SYNCHRONOUS		1048576 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		1MX64	1M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V	35.055 mm		2.54 mm		67108864 bit	3 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm	6 ns
K4H560838F-UCA20	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	250 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX8	32M	0 Cel		DUAL	1	R-PDSO-G66	2	2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH				.003 Amp	2,4,8	22.22 mm	.75 ns
K4R881869D-FCCS9	Samsung	RAMBUS DRAM
K4F160412D-FL500	Samsung	FAST PAGE DRAM	COMMERCIAL	24	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words		YES		3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		4MX4	4M	0 Cel		DUAL	1	R-PDSO-G24		3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH						17.14 mm	50 ns
K4B4G0846D-BCMA0	Samsung	DDR3 DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			512MX8	512M			BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		7.5 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH						11 mm
K4S56163LF-XG1L0	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54		2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		30	240			11 mm	7 ns
KM416C1204ATR-8	Samsung	EDO DRAM	COMMERCIAL	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words				5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel		DUAL	1	R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						20.95 mm	80 ns
KM416V1000ATR-L6	Samsung	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel		DUAL	1	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH						20.95 mm	60 ns
KMM464S824CT1-FH/FL	Samsung	SYNCHRONOUS DRAM MODULE		144			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD			8388608 words						64	MICROELECTRONIC ASSEMBLY						8MX64	8M			DUAL	1	R-XDMA-N144						Not Qualified	536870912 bit									6 ns
M53640410DW0-C50	Samsung	EDO DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words				5		36	MICROELECTRONIC ASSEMBLY				70 Cel		4MX36	4M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V				Not Qualified	150994944 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							50 ns
K4F160811C-BC50	Samsung	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	2097152 words		NO	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel		DUAL	1	R-PDSO-J28		5.5 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.001 Amp		18.42 mm	50 ns
K4H511638D-UCCC	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		400 mA	33554432 words	2,4,8		COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	32MX16	32M	0 Cel	TIN BISMUTH	DUAL		R-PDSO-G66	3			200 MHz		Not Qualified	536870912 bit			e6		260	.005 Amp	2,4,8		.65 ns
K4S560832D-NL750	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel		32MX8	32M	0 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		7.6 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH		30	240			14 mm	5.4 ns
K4T1G164QF-BCF7T	Samsung	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		180 mA	67108864 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM		R-PBGA-B84				400 MHz		Not Qualified	1073741824 bit						.01 Amp	4,8		.4 ns
K4H280438E-TCAA	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	280 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX4	32M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0			.003 Amp	2,4,8	22.22 mm	.75 ns
K4F660411B-TC500	Samsung	FAST PAGE DRAM	COMMERCIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words				5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		16MX4	16M	0 Cel		DUAL	1	R-PDSO-G32		5.5 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		30	240			20.95 mm	50 ns
KMM366S400BTN-G2	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2080 mA	4194304 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel		DUAL		R-PDMA-N168			31.75 mm	83 MHz		Not Qualified	268435456 bit						.008 Amp			8 ns
K4H561638F-TLB30	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	350 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0				2,4,8	22.22 mm	.7 ns
K4F661612E-TC450	Samsung	FAST PAGE DRAM	COMMERCIAL	50	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		130 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel		DUAL		R-PDSO-G50						Not Qualified	67108864 bit						.0005 Amp			45 ns
KMMR16R8GAC1-RK8	Samsung	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES	COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	128MX16	128M			DUAL	1	R-XDMA-N184		2.63 V		800 MHz		Not Qualified	2147483648 bit	2.37 V	SELF CONTAINED REFRESH
KMM491000-10	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	30		512		PLASTIC/EPOXY		NO		CMOS			540 mA	1048576 words			COMMON	5	5	9		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	0 Cel	TIN LEAD	SINGLE			3					Not Qualified	9437184 bit			e0			.009 Amp			100 ns
K4H280438B-TLA2	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	350 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX4	32M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0			.03 Amp	2,4,8	22.22 mm	.75 ns
M366S6453CTU-L7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1840 mA	67108864 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V		133 MHz		Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH				.032 Amp			5.4 ns
K4E660811B-TC600	Samsung	EDO DRAM	COMMERCIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		8388608 words				5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		8MX8	8M	0 Cel		DUAL	1	R-PDSO-G32		5.5 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						20.95 mm	60 ns
K4F660812E-TL60T	Samsung	FAST PAGE DRAM	COMMERCIAL	32	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	8388608 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel		DUAL		R-PDSO-G32						Not Qualified	67108864 bit						.0002 Amp			60 ns
K4M56163PG-RE90T	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		65 mA	16777216 words	1,2,4,8,FP		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel		BOTTOM		S-PBGA-B54	1			111 MHz		Not Qualified	268435456 bit						.00001 Amp	1,2,4,8		7 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.