Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Interleaved Burst Length | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
YES |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
1040 mA |
4194304 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX32 |
4M |
0 Cel |
QUAD |
1 |
R-XQMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
134217728 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.008 Amp |
50 ns |
|||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
840 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.527 mm |
Not Qualified |
33554432 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.008 Amp |
60 ns |
|||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
20 |
SOJ |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
YES |
1 |
CMOS |
MIL-STD-883 |
J BEND |
ASYNCHRONOUS |
262144 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
125 Cel |
256KX4 |
256K |
-55 Cel |
DUAL |
1 |
R-XDSO-J20 |
5.5 V |
2.54 mm |
8.385 mm |
Not Qualified |
1048576 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
17.145 mm |
70 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
855 mA |
4194304 words |
COMMON |
5 |
5 |
9 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
4MX9 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N30 |
5.25 V |
23.114 mm |
Not Qualified |
37748736 bit |
4.75 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.009 Amp |
60 ns |
||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
ZIP |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
65 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
ZIP20,.1 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX1 |
1M |
0 Cel |
ZIG-ZAG |
1 |
R-PZIP-T20 |
5.5 V |
10.16 mm |
2.8 mm |
Not Qualified |
1048576 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.002 Amp |
100 ns |
|||||||||||||||||
Texas Instruments |
VIDEO DRAM |
COMMERCIAL |
64 |
SSOP |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE WITH EDO |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
225 mA |
262144 words |
5 |
5 |
16 |
SMALL OUTLINE, SHRINK PITCH |
SOP64,.54,32 |
Other Memory ICs |
.8 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
DUAL |
2 |
R-PDSO-G64 |
5.5 V |
2.38 mm |
12.04 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT |
NOT SPECIFIED |
NOT SPECIFIED |
.005 Amp |
26.295 mm |
60 ns |
|||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
24 |
QCCN |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
YES |
1 |
CMOS |
MIL-STD-883 |
NO LEAD |
ASYNCHRONOUS |
4194304 words |
5 |
4 |
CHIP CARRIER |
1.27 mm |
125 Cel |
4MX4 |
4M |
-55 Cel |
TIN LEAD |
QUAD |
1 |
R-XQCC-N24 |
5.5 V |
3.18 mm |
11.43 mm |
Not Qualified |
16777216 bit |
4.5 V |
CAS BEFORE RAS REFRESH |
e0 |
19.69 mm |
100 ns |
|||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1048576 words |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
33554432 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
70 ns |
||||||||||||||||||||||||||||||
Texas Instruments |
VIDEO DRAM |
COMMERCIAL |
64 |
TSOP2 |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
262144 words |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
.65 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
DUAL |
2 |
R-PDSO-G64 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT |
23.495 mm |
70 ns |
||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
4194304 words |
YES |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
4MX4 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-J24 |
5.5 V |
3.76 mm |
7.62 mm |
Not Qualified |
16777216 bit |
4.5 V |
CAS BEFORE RAS/SELF REFRESH |
17.145 mm |
70 ns |
|||||||||||||||||||||||||
Texas Instruments |
EDO DRAM |
COMMERCIAL |
44 |
TSOP2 |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE WITH EDO |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
130 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-G44 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
16777216 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
20.95 mm |
50 ns |
|||||||||||||||
Texas Instruments |
VIDEO DRAM |
COMMERCIAL |
18 |
QCCJ |
256 |
RECTANGULAR |
PLASTIC/EPOXY |
PAGE |
YES |
1 |
NMOS |
J BEND |
ASYNCHRONOUS |
90 mA |
65536 words |
5 |
1 |
CHIP CARRIER |
LDCC22,.33X.53 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
64KX1 |
64K |
0 Cel |
QUAD |
2 |
R-PQCC-J18 |
5.5 V |
3.53 mm |
7.366 mm |
Not Qualified |
65536 bit |
4.5 V |
RAS ONLY REFRESH; 256 X 1 SAM PORT |
NOT SPECIFIED |
NOT SPECIFIED |
.02 Amp |
12.446 mm |
200 ns |
||||||||||||||||||
Texas Instruments |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
MOS |
NO LEAD |
ASYNCHRONOUS |
640 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
Not Qualified |
536870912 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.002 Amp |
40 ns |
|||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
ZIP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
85 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
4 |
IN-LINE |
ZIP20,.1 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
ZIG-ZAG |
1 |
R-PZIP-T20 |
5.5 V |
10.16 mm |
2.8 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
70 ns |
||||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
2097152 words |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
67108864 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
70 ns |
||||||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
18 |
DIP |
512 |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
1048576 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP18,.3 |
DRAMs |
2.54 mm |
125 Cel |
3-STATE |
1MX1 |
1M |
-55 Cel |
DUAL |
R-XDIP-T18 |
Not Qualified |
1048576 bit |
120 ns |
||||||||||||||||||||||||||||||
Texas Instruments |
DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
256 |
RECTANGULAR |
UNSPECIFIED |
PAGE |
NO |
1 |
NMOS |
NO LEAD |
ASYNCHRONOUS |
262144 words |
COMMON |
5 |
5 |
9 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX9 |
256K |
0 Cel |
SINGLE |
1 |
R-XSMA-N30 |
5.5 V |
16.51 mm |
Not Qualified |
2359296 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
120 ns |
||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
24 |
TSOP2 |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
100 mA |
4194304 words |
NO |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP24/26,.36 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX4 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-G24 |
3.6 V |
1.2 mm |
7.62 mm |
Not Qualified |
16777216 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
17.14 mm |
60 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
2097152 words |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
67108864 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
80 ns |
||||||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
720 mA |
1048576 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX36 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.527 mm |
Not Qualified |
37748736 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.009 Amp |
80 ns |
||||||||||||||||||||
Texas Instruments |
DRAM MODULE |
COMMERCIAL |
24 |
256 |
RECTANGULAR |
UNSPECIFIED |
NIBBLE |
NO |
1 |
NMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
262144 words |
SEPARATE |
5 |
5 |
5 |
MICROELECTRONIC ASSEMBLY |
SIP24,.2 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX5 |
256K |
0 Cel |
SINGLE |
1 |
R-XSMA-T24 |
5.5 V |
Not Qualified |
1310720 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
120 ns |
||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
320 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
67108864 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.004 Amp |
70 ns |
|||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
280 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.527 mm |
Not Qualified |
67108864 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.004 Amp |
80 ns |
|||||||||||||||||||
Texas Instruments |
PAGE MODE DRAM |
COMMERCIAL |
16 |
DIP |
128 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
16384 words |
SEPARATE |
+-5,12 |
1 |
IN-LINE |
DIP16,.3 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
16KX1 |
16K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T16 |
Not Qualified |
16384 bit |
e0 |
200 ns |
|||||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
540 mA |
16777216 words |
COMMON |
5 |
5 |
9 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
16MX9 |
16M |
0 Cel |
SINGLE |
1 |
R-XSMA-N30 |
5.5 V |
Not Qualified |
150994944 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.009 Amp |
100 ns |
|||||||||||||||||||
Texas Instruments |
EDO DRAM |
COMMERCIAL |
24 |
SOJ |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE WITH EDO |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
4194304 words |
YES |
3.3 |
4 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
3-STATE |
4MX4 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-J24 |
3.6 V |
3.76 mm |
7.62 mm |
Not Qualified |
16777216 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH |
17.145 mm |
60 ns |
|||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
LSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
90 mA |
1048576 words |
YES |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE, LOW PROFILE |
TSSOP20/26,.36 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-G20 |
5.5 V |
1.27 mm |
7.62 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.0005 Amp |
17.14 mm |
70 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
24 |
SON |
4096 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
FAST PAGE |
YES |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
16777216 words |
5 |
1 |
SMALL OUTLINE |
1.27 mm |
125 Cel |
3-STATE |
16MX1 |
16M |
-55 Cel |
DUAL |
1 |
R-CDSO-N24 |
5.5 V |
3.18 mm |
11.43 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
19.685 mm |
100 ns |
||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
20 |
DFP |
1024 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
FAST PAGE |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
FLAT |
ASYNCHRONOUS |
85 mA |
4194304 words |
NO |
SEPARATE |
5 |
5 |
1 |
FLATPACK |
FL20,.5 |
DRAMs |
1.27 mm |
125 Cel |
3-STATE |
4MX1 |
4M |
-55 Cel |
DUAL |
1 |
R-CDFP-F20 |
5.5 V |
2.54 mm |
12.446 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.004 Amp |
17.775 mm |
80 ns |
||||||||||||||
Texas Instruments |
DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
256 |
RECTANGULAR |
UNSPECIFIED |
PAGE |
NO |
1 |
NMOS |
NO LEAD |
ASYNCHRONOUS |
65536 words |
COMMON |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
0 Cel |
SINGLE |
1 |
R-XSMA-N30 |
5.5 V |
Not Qualified |
524288 bit |
4.5 V |
RAS ONLY REFRESH |
150 ns |
|||||||||||||||||||||||
Texas Instruments |
PAGE MODE DRAM |
OTHER |
16 |
DIP |
256 |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
262144 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP16,.3 |
DRAMs |
2.54 mm |
100 Cel |
3-STATE |
256KX1 |
256K |
-55 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
262144 bit |
NOT SPECIFIED |
NOT SPECIFIED |
150 ns |
||||||||||||||||||||||||||||
Texas Instruments |
DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
256 |
RECTANGULAR |
UNSPECIFIED |
PAGE |
NO |
1 |
NMOS |
NO LEAD |
ASYNCHRONOUS |
65536 words |
COMMON |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
0 Cel |
SINGLE |
1 |
R-XSMA-N30 |
5.5 V |
Not Qualified |
524288 bit |
4.5 V |
RAS ONLY REFRESH |
150 ns |
|||||||||||||||||||||||
Texas Instruments |
SYNCHRONOUS DRAM |
MILITARY |
50 |
TSOP2 |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
DUAL BANK PAGE BURST |
YES |
1 |
CMOS |
MIL-PRF-38535 Class N |
GULL WING |
SYNCHRONOUS |
175 mA |
1048576 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP50,.46,32 |
DRAMs |
.8 mm |
125 Cel |
3-STATE |
1MX16 |
1M |
-55 Cel |
DUAL |
1 |
R-PDSO-G50 |
3.465 V |
1.2 mm |
66 MHz |
10.16 mm |
Not Qualified |
16777216 bit |
3.135 V |
AUTO REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.002 Amp |
1,2,4,8 |
20.95 mm |
9 ns |
||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
20 |
SON |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
FAST PAGE |
YES |
1 |
MOS |
NO LEAD |
ASYNCHRONOUS |
1048576 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
125 Cel |
1MX4 |
1M |
-55 Cel |
DUAL |
1 |
R-CDSO-N20 |
5.5 V |
2.03 mm |
8.89 mm |
Not Qualified |
4194304 bit |
4.5 V |
CAS BEFORE RAS/HIDDEN REFRESH |
17.145 mm |
100 ns |
||||||||||||||||||||||||||
Texas Instruments |
VIDEO DRAM |
MILITARY |
28 |
DIP |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
262144 words |
5 |
4 |
IN-LINE |
125 Cel |
256KX4 |
256K |
-55 Cel |
TIN LEAD |
DUAL |
2 |
R-XDIP-T28 |
5.5 V |
Not Qualified |
1048576 bit |
4.5 V |
CAS BEFORE RAS/HIDDEN REFRESH |
e0 |
100 ns |
||||||||||||||||||||||||||||
Texas Instruments |
VIDEO DRAM |
MILITARY |
28 |
SON |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
FAST PAGE |
YES |
1 |
MOS |
NO LEAD |
ASYNCHRONOUS |
262144 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
125 Cel |
256KX4 |
256K |
-55 Cel |
DUAL |
2 |
R-CDSO-N28 |
5.5 V |
2.54 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT |
18.285 mm |
120 ns |
||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
600 mA |
4194304 words |
COMMON |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
4MX8 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N30 |
5.5 V |
23.114 mm |
Not Qualified |
33554432 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.008 Amp |
80 ns |
||||||||||||||||||||
Texas Instruments |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
MOS |
NO LEAD |
ASYNCHRONOUS |
2880 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
31.75 mm |
Not Qualified |
1207959552 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.009 Amp |
40 ns |
||||||||||||||||||||
Texas Instruments |
EDO DRAM |
COMMERCIAL |
24 |
SOJ |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE WITH EDO |
YES |
1 |
CMOS |
J BEND |
SYNCHRONOUS |
100 mA |
4194304 words |
NO |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24/26,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX4 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-J24 |
5.5 V |
3.76 mm |
7.62 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
17.145 mm |
50 ns |
|||||||||||||||
Texas Instruments |
VIDEO DRAM |
MILITARY |
28 |
DIP |
512 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
FAST PAGE |
NO |
1 |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
ASYNCHRONOUS |
110 mA |
262144 words |
5 |
5 |
4 |
IN-LINE |
DIP28,.4 |
Other Memory ICs |
2.54 mm |
125 Cel |
3-STATE |
256KX4 |
256K |
-55 Cel |
DUAL |
2 |
R-CDIP-T28 |
5.5 V |
4.445 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT |
NOT SPECIFIED |
NOT SPECIFIED |
.015 Amp |
36.83 mm |
100 ns |
||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
20 |
DIP |
1024 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
FAST PAGE |
NO |
1 |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
SYNCHRONOUS |
80 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
4 |
IN-LINE |
DIP20,.3 |
DRAMs |
2.54 mm |
125 Cel |
3-STATE |
1MX4 |
1M |
-55 Cel |
DUAL |
1 |
R-CDIP-T20 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
4194304 bit |
4.5 V |
CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.004 Amp |
25.4 mm |
100 ns |
||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
18 |
DIP |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
80 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP18,.3 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
1MX1 |
1M |
0 Cel |
DUAL |
R-PDIP-T18 |
Not Qualified |
1048576 bit |
.002 Amp |
70 ns |
||||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
85 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ20/26,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J20 |
5.5 V |
3.76 mm |
7.62 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
17.145 mm |
70 ns |
|||||||||||||||
Texas Instruments |
STATIC COLUMN DRAM |
COMMERCIAL |
20 |
SOJ |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
STATIC COLUMN |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
75 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ20/26,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX1 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J20 |
5.5 V |
3.76 mm |
7.57 mm |
Not Qualified |
1048576 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.002 Amp |
17.145 mm |
80 ns |
||||||||||||||||
Texas Instruments |
PAGE MODE DRAM |
COMMERCIAL |
16 |
DIP |
256 |
RECTANGULAR |
PLASTIC/EPOXY |
PAGE |
NO |
1 |
NMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
65536 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP16,.3 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
64KX1 |
64K |
0 Cel |
DUAL |
1 |
R-PDIP-T16 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
RAS ONLY REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
200 ns |
||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
20 |
DFP |
512 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
FAST PAGE WITH EDO |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
FLAT |
SYNCHRONOUS |
70 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
FLATPACK |
FL20,.4 |
DRAMs |
1.27 mm |
125 Cel |
3-STATE |
1MX1 |
1M |
-55 Cel |
DUAL |
1 |
R-CDFP-F20 |
5.5 V |
2.41 mm |
9.655 mm |
Not Qualified |
1048576 bit |
4.5 V |
CAS BEFORE RAS REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.003 Amp |
17.015 mm |
100 ns |
DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.
DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.
DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.
There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.
One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.