Toshiba DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
TC5116100BJ-50	Toshiba	FAST PAGE DRAM		24	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND			16777216 words				5		1	SMALL OUTLINE			1.27 mm			16MX1	16M			DUAL	1	R-PDSO-J24	5.5 V	3.75 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V					18.42 mm	50 ns
TC514900AZ-80	Toshiba	FAST PAGE DRAM		28	ZIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE			524288 words				5		9	IN-LINE			1.27 mm			512KX9	512K		TIN LEAD	ZIG-ZAG	1	R-PZIP-T28	5.5 V	10.16 mm			Not Qualified	4718592 bit	4.5 V		e0			36.2 mm	80 ns
TC514100CFT-50	Toshiba	OTHER DRAM		20	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			4194304 words				5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm			4MX1	4M			DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		7.7 mm	Not Qualified	4194304 bit	4.5 V					17.14 mm	50 ns
THLY12N11B70	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	680 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V		143 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		.004 Amp			5.4 ns
TMM416D-4	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE			16384 words			SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16					Not Qualified	16384 bit			e0				250 ns
TC5165805AFT-40	Toshiba	EDO DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		8388608 words				3.3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			20.95 mm	40 ns
THLY12N11C80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	600 mA	16777216 words		YES	COMMON	3.3	3.3	16	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	1.27 mm	70 Cel	3-STATE	16MX16	16M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V	25.53 mm	125 MHz	2.8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH; WD-MAX		.004 Amp		133.35 mm	6 ns
THM84020CL-50	Toshiba	DRAM MODULE									1	CMOS				4194304 words						8							4MX8	4M				1						Not Qualified	33554432 bit							50 ns
TC514410J-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words				5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm		8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			17.15 mm	80 ns
THMY12E11B80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	750 mA	16777216 words		YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		16MX72	16M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V		125 MHz		Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH		.005 Amp			6 ns
THMD51N01B80	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V		125 MHz		Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH					.8 ns
THMY12N11B70	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	680 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V		142 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		.004 Amp			5.4 ns
THM3220C0ASG-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		284 mA	2097152 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel		SINGLE		R-PSMA-N72		17.78 mm			Not Qualified	67108864 bit				.004 Amp			70 ns
TC59SM904AFT-70	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	128MX4	128M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	5.4 ns
THMR1N4E-8	Toshiba	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES	COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	32MX16	32M			DUAL	1	R-XDMA-N184	2.63 V	31.75 mm	800 MHz	4.8 mm	Not Qualified	536870912 bit	2.37 V	SELF CONTAINED REFRESH; WD-MAX				133.35 mm	45 ns
TC514400AZ-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		4	IN-LINE			1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm			Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			25.8 mm	70 ns
TC5164805BJ-40	Toshiba	EDO DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	120 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J32	3.6 V	3.7 mm		10.16 mm	Not Qualified	67108864 bit	3 V		e0	.0005 Amp		20.96 mm	40 ns
TC59SM704FTL-75	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		190 mA	33554432 words	1,2,4,8,FP		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX4	32M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			133 MHz		Not Qualified	134217728 bit			e0	.001 Amp	1,2,4,8		5.4 ns
TC59S6432BFT-80	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		YES		3.3		32	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		2MX32	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G86	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0			22.22 mm	6 ns
TC5116800ANJ-70	Toshiba	OTHER DRAM		28	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND			2097152 words				5		8	SMALL OUTLINE			1.27 mm			2MX8	2M			DUAL	1	R-PDSO-J28	5.5 V	3.7 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V					18.42 mm	70 ns
TC514400AJL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words				5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm		8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			17.15 mm	100 ns
TC51V17405BFT-60	Toshiba	EDO DRAM	COMMERCIAL	24	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	4194304 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24					Not Qualified	16777216 bit			e0	.0005 Amp			60 ns
TC59YM916AMG32A	Toshiba	RAMBUS DRAM		108	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE			1.27 mm			32MX16	32M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B108	1.86 V	1.2 mm			Not Qualified	536870912 bit	1.74 V	SELF CONTAINED REFRESH	e1
TC59SM916AFTL-75	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	5.4 ns
THM91021AL-80	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30			UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	MOS	UNSPECIFIED	ASYNCHRONOUS		1048576 words				5		9	MICROELECTRONIC ASSEMBLY				70 Cel		1MX9	1M	0 Cel		UNSPECIFIED	1	X-XXMA-X30	5.5 V				Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					80 ns
TMM41257P-12	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			262144 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16					Not Qualified	262144 bit			e0				120 ns
TC514258AZ-80	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	19	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		4	IN-LINE			1.27 mm	70 Cel		256KX4	256K	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T19	5.5 V	10.16 mm			Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			25.8 mm	80 ns
TC59LM905AMG-50	Toshiba	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			67108864 words	2,4		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,6X15,40	DRAMs	1 mm	70 Cel	3-STATE	64MX8	64M	0 Cel		BOTTOM		R-PBGA-B60			200 MHz		Not Qualified	536870912 bit					2,4		.65 ns
TC5165165AJ-50	Toshiba	EDO DRAM	COMMERCIAL	50	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words				3.3		16	SMALL OUTLINE			.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J50	3.6 V	3.7 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			20.96 mm	50 ns
TC51V18160AJ-80	Toshiba	OTHER DRAM		42	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND			1048576 words				3.3		16	SMALL OUTLINE			1.27 mm			1MX16	1M			DUAL	1	R-PDSO-J42	3.6 V	3.7 mm		10.16 mm	Not Qualified	16777216 bit	3 V					27.31 mm	80 ns
TC514100AFT-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		7.7 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			17.14 mm	80 ns
TC51V16160CFTS-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel		DUAL	1	R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH				20.95 mm	60 ns
TC59LM814CFT-60	Toshiba	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS	GULL WING	SYNCHRONOUS	170 mA	16777216 words	2,4	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G66	2.65 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	268435456 bit	2.35 V	AUTO/SELF REFRESH	e0	.002 Amp	2,4	22.22 mm	.85 ns
TC51V16165BFT-70	Toshiba	EDO DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		75 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44					Not Qualified	16777216 bit			e0	.0005 Amp			70 ns
TC51V16160CJ-50	Toshiba	FAST PAGE DRAM	COMMERCIAL	42	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words				3.3		16	SMALL OUTLINE			1.27 mm	70 Cel		1MX16	1M	0 Cel		DUAL	1	R-PDSO-J42	3.6 V	3.7 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				27.31 mm	50 ns
THL321010ATG-7	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1		GULL WING			1048576 words						32	SMALL OUTLINE						1MX32	1M			DUAL	1	R-PDSO-G72					Not Qualified	33554432 bit							70 ns
TC5117800ANT-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		2097152 words				5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			18.41 mm	80 ns
TC51V17400BSJ-60	Toshiba	OTHER DRAM		26	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND			4194304 words				3.3		4	SMALL OUTLINE						4MX4	4M			DUAL	1	R-PDSO-J26	3.6 V				Not Qualified	16777216 bit	3 V						60 ns
THL321010CTG-5	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			1048576 words						32	SMALL OUTLINE						1MX32	1M			DUAL	1	R-PDSO-G72					Not Qualified	33554432 bit							50 ns
THM368020S-80	Toshiba	DRAM MODULE									1	CMOS				8388608 words						36							8MX36	8M				1						Not Qualified	301989888 bit							80 ns
TC511664JL-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		65536 words				5		16	SMALL OUTLINE			1.27 mm	70 Cel		64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			26.04 mm	80 ns
THM361070AS-60	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				5		36	MICROELECTRONIC ASSEMBLY				70 Cel		1MX36	1M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	37748736 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					60 ns
THMD1GE2SB70	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V		143 MHz		Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH					.75 ns
THL64V8015BTG-5	Toshiba	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	800 mA	8388608 words		NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144	3.47 V				Not Qualified	536870912 bit	3.13 V			.004 Amp			50 ns
THM362060AS-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words				5		36	MICROELECTRONIC ASSEMBLY				70 Cel		2MX36	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	75497472 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					70 ns
TC514400CFT-50	Toshiba	FAST PAGE DRAM		20	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			1048576 words				5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm			1MX4	1M			DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		7.7 mm	Not Qualified	4194304 bit	4.5 V					17.14 mm	50 ns
TC514102AZ-70	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words				5		1	IN-LINE			1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm			Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			25.8 mm	70 ns
TC514800AJLL-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		524288 words		YES		5		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.7 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH	e0			18.42 mm	80 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.