Toshiba DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
THM88020ATS-70	Toshiba	DRAM MODULE		30	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			8388608 words						8	SMALL OUTLINE								8MX8	8M			DUAL	1	R-PDSO-G30					Not Qualified	67108864 bit							70 ns
TC51V18165CJS-60	Toshiba	EDO DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words		YES		3.3		16	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	1MX16	1M	0 Cel		DUAL	1	R-PDSO-J42	3.6 V	3.7 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH				27.31 mm	60 ns
THL64V4095BTG-4	Toshiba	EDO DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words				3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel			4MX64	4M	0 Cel		DUAL	1	R-XDMA-N144	3.47 V				Not Qualified	268435456 bit	3.13 V						40 ns
TC51V16180AFT-70	Toshiba	OTHER DRAM		44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			1048576 words				3.3		18	SMALL OUTLINE, THIN PROFILE				.8 mm				1MX18	1M			DUAL	1	R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	18874368 bit	3 V					20.95 mm	70 ns
TC514280BTR-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	262144 words		NO	COMMON	5	5	18	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX18	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40					Not Qualified	4718592 bit			e0	.001 Amp			70 ns
TC51V16400CSJ-50	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words				3.3		4	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	3.6 V	3.7 mm		7.7 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			17.15 mm	50 ns
TC59SM916AFT-75	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	32MX16	32M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	5.4 ns
TC59S6432DFTLI-70	Toshiba	SYNCHRONOUS DRAM	INDUSTRIAL	86	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	140 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20		DRAMs	.5 mm	85 Cel		3-STATE	2MX32	2M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G86	3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	4.4 ns
THMY64N11A70L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel			8MX64	8M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH					5.4 ns
TC51V16160AFT-80	Toshiba	OTHER DRAM		44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			1048576 words				3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm				1MX16	1M			DUAL	1	R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V					20.95 mm	80 ns
TC514280BTR-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		95 mA	262144 words		NO	COMMON	5	5	18	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX18	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40					Not Qualified	4718592 bit			e0	.001 Amp			80 ns
TC5117400CST-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel		DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		7.7 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				17.14 mm	60 ns
TC59LM806CTG-50	Toshiba	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS	GULL WING	SYNCHRONOUS	190 mA	33554432 words	2,4	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46		DRAMs	.65 mm	70 Cel		3-STATE	32MX8	32M	0 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G66	2.65 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	268435456 bit	2.35 V	AUTO/SELF REFRESH	e4	.002 Amp	2,4	22.22 mm	.65 ns
TC514800AZLL-70	Toshiba	FAST PAGE DRAM		28	ZIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE			524288 words				5		8	IN-LINE				1.27 mm				512KX8	512K			ZIG-ZAG	1	R-PZIP-T28	5.5 V	10.16 mm			Not Qualified	4194304 bit	4.5 V					36.2 mm	70 ns
THM94020CL-50	Toshiba	DRAM MODULE									1	CMOS				4194304 words						9									4MX9	4M				1						Not Qualified	37748736 bit							50 ns
TC59LM814CFTI-60	Toshiba	DDR1 DRAM	INDUSTRIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS	GULL WING	SYNCHRONOUS		16777216 words				2.5		16	SMALL OUTLINE, THIN PROFILE				.65 mm	85 Cel			16MX16	16M	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.65 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	2.35 V	AUTO REFRESH	e0			22.22 mm	.85 ns
THLY6480X1MG-80L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				.5 mm	70 Cel			8MX64	8M	0 Cel		ZIG-ZAG	1	R-XZMA-N144	3.6 V	30 mm		3.8 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				38 mm	6 ns
TMM411001C-12	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE			1048576 words			SEPARATE	5	5	1	IN-LINE	DIP18,.3		DRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	1048576 bit			e0				120 ns
TC514258BFT-60	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	TSOP1	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		4	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		6 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			14.4 mm	60 ns
TC524259BJ-80	Toshiba	VIDEO DRAM	COMMERCIAL	28	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words				5		4	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-J28	5.5 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT	e0			18.42 mm	80 ns
THM72V1635ATG-4	Toshiba	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2890 mA	16777216 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	36	Other Memory ICs	1.27 mm	70 Cel		3-STATE	16MX72	16M	0 Cel		DUAL	1	R-XDMA-N168	3.47 V	30.48 mm			Not Qualified	1207959552 bit	3.13 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.019 Amp			40 ns
THM364080AS-70	Toshiba	DRAM MODULE									1					4194304 words						36									4MX36	4M				1						Not Qualified	150994944 bit							70 ns
TC524262TR-60	Toshiba	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST AND PIPELINED PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, THIN PROFILE				.65 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			23.45 mm	60 ns
TC514102AZ-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words				5		1	IN-LINE				1.27 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm			Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			25.8 mm	100 ns
THM91070AL-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1		THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		9	MICROELECTRONIC ASSEMBLY					70 Cel			1MX9	1M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30	5.5 V				Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				70 ns
TC59S6408AFT-12	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			8388608 words	1,2,4,8,FP		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			83 MHz		Not Qualified	67108864 bit			e0		1,2,4,8		8 ns
THM81070AS-80	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		170 mA	1048576 words			COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel		3-STATE	1MX8	1M	0 Cel		SINGLE		R-PSMA-N30		5.08 mm			Not Qualified	8388608 bit				.002 Amp			80 ns
TC514400ATR-80	Toshiba	OTHER DRAM		20	TSOP2-R		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			1048576 words				5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm				1MX4	1M			DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		7.7 mm	Not Qualified	4194304 bit	4.5 V					17.14 mm	80 ns
TC59S6432CFTL-54	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	160 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20		DRAMs	.5 mm	70 Cel		3-STATE	2MX32	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G86	3.6 V	1.2 mm	185 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	5.4 ns
TC514101AP-80	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words				5		1	IN-LINE				2.54 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	4.4 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			22 mm	80 ns
TC514100JL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words				5		1	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm		8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			17.15 mm	100 ns
THLY641641FG-10L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	740 mA	67108864 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel		3-STATE	64MX64	64M	0 Cel		ZIG-ZAG	1	R-XZMA-N144	3.6 V		100 MHz		Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH		.008 Amp			7 ns
TC528257TR-80	Toshiba	VIDEO DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST AND PIPELINED PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		8	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G40	5.5 V	1.2 mm		10.16 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/AUTO/HIDDEN REFRESH	e0			18.41 mm	80 ns
TC511664Z-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		16	IN-LINE				1.27 mm	70 Cel			64KX16	64K	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.07 mm			Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			51.2 mm	80 ns
TC514800AFT-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		75 mA	524288 words		NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46		DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28					Not Qualified	4194304 bit			e0	.001 Amp			100 ns
TC59SM816CFTI-75	Toshiba	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	160 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	85 Cel		3-STATE	16MX16	16M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	5.4 ns
TC514265DFTS-50	Toshiba	EDO DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		130 mA	262144 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40					Not Qualified	4194304 bit			e0	.0002 Amp			50 ns
THMY12E11C70	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	850 mA	16777216 words		YES	COMMON	3.3	3.3	16	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel			16MX16	16M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V	25.53 mm	143 MHz	2.8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH; WD-MAX		.005 Amp		133.35 mm	5.4 ns
TC51V18165BJ-70	Toshiba	EDO DRAM MODULE							FAST PAGE WITH EDO		1			ASYNCHRONOUS		1048576 words						16									1MX16	1M				1						Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					70 ns
TC5117405CST-40	Toshiba	EDO DRAM	COMMERCIAL	24	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel		DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		7.7 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				17.14 mm	40 ns
TC59S6404FT-80	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	210 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0	.002 Amp	1,2,4,8	22.22 mm	6 ns
TC59R1809VK	Toshiba	RAMBUS DRAM	COMMERCIAL	32			RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	L BEND	SYNCHRONOUS		2097152 words		YES		3.3		9	VERTICAL SURFACE MOUNT					70 Cel			2MX9	2M	0 Cel	TIN LEAD	SINGLE	1	R-PSVP-L32	3.6 V				Not Qualified	18874368 bit	3 V	SELF REFRESH	e0
THLY641681FG-10L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS		16777216 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				.8 mm	70 Cel			16MX64	16M	0 Cel		DUAL	1	R-XDMA-X144	3.6 V	26.67 mm		3.8 mm	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				67.6 mm	7 ns
THMY25E01A80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel			32MX72	32M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH					6 ns
TC5117445BSJ-50	Toshiba	OTHER DRAM		26	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND			4194304 words				5		4	SMALL OUTLINE								4MX4	4M			DUAL	1	R-PDSO-J26	5.5 V				Not Qualified	16777216 bit	4.5 V						50 ns
TC51V17800BNJ70	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		105 mA	2097152 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.44		DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28					Not Qualified	16777216 bit			e0	.0005 Amp			70 ns
THM364080AS-10	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2700 mA	4194304 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel		3-STATE	4MX36	4M	0 Cel		SINGLE		R-PSMA-N72		31.877 mm			Not Qualified	150994944 bit				.036 Amp			100 ns
TC5164165AJ-60	Toshiba	EDO DRAM	COMMERCIAL	50	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words				3.3		16	SMALL OUTLINE				.8 mm	70 Cel		3-STATE	4MX16	4M	0 Cel		DUAL	1	R-PDSO-J50	3.6 V	3.7 mm		10.16 mm	Not Qualified	67108864 bit	3 V	CAS BEFORE RAS/HIDDEN REFRESH				20.96 mm	60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.