Toshiba DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
TC5116400BST-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		70 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24					Not Qualified	16777216 bit			e0	.001 Amp			70 ns
THMY7216C1BEG-80L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		16MX72	16M	0 Cel		DUAL	1	R-XDMA-N168	3.45 V				Not Qualified	1207959552 bit	3.15 V	AUTO/SELF REFRESH					6 ns
THLG641021AFG-12	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		570 mA	1048576 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX64	1M	0 Cel		DUAL		R-PDMA-N144			83 MHz		Not Qualified	67108864 bit				.008 Amp			9 ns
TC59LM906AMB-50	Toshiba	DDR1 DRAM	OTHER	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS	BALL	SYNCHRONOUS		67108864 words		YES		2.5		8	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		64MX8	64M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60	2.625 V	1.2 mm		12.7 mm	Not Qualified	536870912 bit	2.375 V	AUTO/SELF REFRESH	e0			16.5 mm	24 ns
TC514400AP-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		4	IN-LINE				2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.4 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			24.6 mm	60 ns
TC5116160CJ-50	Toshiba	FAST PAGE DRAM	COMMERCIAL	42	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words				5		16	SMALL OUTLINE				1.27 mm	70 Cel		1MX16	1M	0 Cel		DUAL	1	R-PDSO-J42	5.5 V	3.7 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				27.31 mm	50 ns
TC514101AJ-10	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words				5		1	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm		8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			17.15 mm	100 ns
TC514266AJ-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words				5		4	SMALL OUTLINE				1.27 mm	70 Cel		256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.55 mm		7.7 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			17.15 mm	100 ns
TC514402ASJ-60	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words				5		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm		7.7 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			17.15 mm	60 ns
TH8D361000UA-70L	Toshiba	DRAM CARD	COMMERCIAL	88			UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	MOS	UNSPECIFIED	ASYNCHRONOUS		1048576 words				5		36	MICROELECTRONIC ASSEMBLY					55 Cel	3-STATE	1MX36	1M	0 Cel		UNSPECIFIED	1	X-XXMA-X88					Not Qualified	37748736 bit		RAS ONLY/CAS BEFORE RAS REFRESH; BYTE ACCESS					70 ns
TC5118180AJ-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	MOS	J BEND	ASYNCHRONOUS		1048576 words				5		18	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	1MX18	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J42	5.5 V	3.7 mm		10.16 mm	Not Qualified	18874368 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			27.31 mm	70 ns
TC51V16400BSJ-60	Toshiba	OTHER DRAM		26	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND			4194304 words				3.3		4	SMALL OUTLINE							4MX4	4M			DUAL	1	R-PDSO-J26	3.6 V				Not Qualified	16777216 bit	3 V						60 ns
TMM41257AZ-15	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		65 mA	262144 words			SEPARATE	5	5	1	IN-LINE	ZIP16,.1		DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T16					Not Qualified	262144 bit			e0				150 ns
TC5117800ANT-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		2097152 words				5		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			18.41 mm	70 ns
TMM41256C-12	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE			262144 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3		DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16					Not Qualified	262144 bit			e0				120 ns
TC5118320BJ-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	70	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		524288 words				5		32	SMALL OUTLINE				.8 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J70	5.5 V	3.7 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			28.57 mm	70 ns
THMR2N8Z-6	Toshiba	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES	COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40		DRAMs	1 mm		3-STATE	128MX16	128M			DUAL	1	R-XDMA-N184	2.63 V	34.93 mm	600 MHz	4.8 mm	Not Qualified	2147483648 bit	2.37 V	SELF CONTAINED REFRESH				133.35 mm
THM321000AS-10	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		600 mA	1048576 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel		SINGLE		R-PSMA-N72		21.59 mm			Not Qualified	33554432 bit				.008 Amp			100 ns
TC524162FT-70	Toshiba	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST AND PIPELINED PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, THIN PROFILE				.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			23.45 mm	70 ns
TC51V17405BFT-70	Toshiba	EDO DRAM	COMMERCIAL	24	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	4194304 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24					Not Qualified	16777216 bit			e0	.0005 Amp			70 ns
THM322020S-80	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	MOS	NO LEAD	ASYNCHRONOUS		2097152 words				5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	2MX32	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					80 ns
THMR2N8Z-7	Toshiba	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES	COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40		DRAMs	1 mm		3-STATE	128MX16	128M			DUAL	1	R-XDMA-N184	2.63 V	34.93 mm	711 MHz	4.8 mm	Not Qualified	2147483648 bit	2.37 V	SELF CONTAINED REFRESH				133.35 mm
THM3220C5BS-70	Toshiba	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		304 mA	2097152 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel		SINGLE		R-PSMA-N72		17.78 mm			Not Qualified	67108864 bit				.004 Amp			70 ns
TC5116400CST-40	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel		DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		7.7 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				17.14 mm	40 ns
TC59SM704AS-80	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		3.3		4	SMALL OUTLINE, THIN PROFILE				.4 mm	70 Cel		32MX4	32M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH				11.2 mm	6 ns
TC59S1616AFT-8	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP2		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		1048576 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0			20.95 mm	7.5 ns
TC5118180AFT-60	Toshiba	FAST PAGE DRAM		44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	MOS	GULL WING	ASYNCHRONOUS		1048576 words				5		18	SMALL OUTLINE, THIN PROFILE				.8 mm		3-STATE	1MX18	1M			DUAL	1	R-PDSO-G44		1.2 mm		10.16 mm	Not Qualified	18874368 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				20.95 mm	60 ns
THL64V4095BTG-4S	Toshiba	EDO DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words				3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		4MX64	4M	0 Cel		DUAL	1	R-XDMA-N144	3.47 V				Not Qualified	268435456 bit	3.13 V						40 ns
TC511664BJ-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		65536 words				5		16	SMALL OUTLINE				1.27 mm	70 Cel		64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			26.04 mm	100 ns
TC59S6404BFT-80	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	140 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	6 ns
TC514410AJ-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words				5		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm		8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			17.15 mm	80 ns
TC5117400BTR-60	Toshiba	FAST PAGE DRAM							FAST PAGE		1	CMOS		ASYNCHRONOUS		4194304 words						4								4MX4	4M				1						Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					60 ns
TC51V16900AJ-70	Toshiba	OTHER DRAM		32	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND			2097152 words				3.3		9	SMALL OUTLINE				1.27 mm			2MX9	2M			DUAL	1	R-PDSO-J32	3.6 V	3.6 mm		10.2 mm	Not Qualified	18874368 bit	3 V					21 mm	70 ns
THM72V8015BTG-5	Toshiba	EDO DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words				3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		8MX72	8M	0 Cel		DUAL	1	R-XDMA-N168	3.47 V				Not Qualified	603979776 bit	3.13 V						50 ns
TC524258BZ-80	Toshiba	VIDEO DRAM	COMMERCIAL	28	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		4	IN-LINE				1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	ZIG-ZAG	2	R-PZIP-T28	5.5 V	10.16 mm			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4	e0			36.2 mm	80 ns
TC5164805BJS-50	Toshiba	EDO DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	100 mA	8388608 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44		DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J32	3.6 V	3.7 mm		10.16 mm	Not Qualified	67108864 bit	3 V		e0	.0002 Amp		20.96 mm	50 ns
THM3251F5BSG70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		180 mA	524288 words			COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	512KX32	512K	0 Cel		SINGLE		R-PSMA-N72					Not Qualified	16777216 bit				.001 Amp			70 ns
THMD1GE2SB80	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V		125 MHz		Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH					.8 ns
THMD1GE0SB70	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V		143 MHz		Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH					.75 ns
TC59SM708FT	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		8	SMALL OUTLINE				.8 mm	70 Cel		16MX8	16M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH				22.22 mm
TC5116160CFT-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words				5		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		1MX16	1M	0 Cel		DUAL	1	R-PDSO-G44	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				20.95 mm	60 ns
TC59SM808BFT-70	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	170 mA	33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	5.4 ns
TC511000P-12	Toshiba	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		50 mA	1048576 words			SEPARATE	5	5	1	IN-LINE	DIP18,.3		DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	1048576 bit			e0	.001 Amp			120 ns
THLD12N11B70	Toshiba	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N200	2.7 V		143 MHz		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH					7 ns
THMY728071BEG-10	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	990 mA	8388608 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V		100 MHz		Not Qualified	603979776 bit	3 V			.009 Amp			7 ns
THM321090CS-50	Toshiba	DRAM MODULE									1	CMOS				1048576 words						32								1MX32	1M				1						Not Qualified	33554432 bit							50 ns
TC514410AJ-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words				5		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm		8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			17.15 mm	60 ns
TC59WM715FT-80	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE				.65 mm	70 Cel		8MX16	8M	0 Cel		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH				22.22 mm	.8 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.