Toshiba DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
TC59SM804CMBL-80	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	YES		3.3		4	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel		64MX4	64M	0 Cel		BOTTOM	1	R-PBGA-B60	3.6 V	1.2 mm		7.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH			15.72 mm	6 ns
TC5164165AJ-50	Toshiba	EDO DRAM	COMMERCIAL	50	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words			3.3		16	SMALL OUTLINE				.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel		DUAL	1	R-PDSO-J50	3.6 V	3.7 mm		10.16 mm	Not Qualified	67108864 bit	3 V	CAS BEFORE RAS/HIDDEN REFRESH			20.96 mm	50 ns
THM81020L-10	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30		512		PLASTIC/EPOXY		NO		CMOS			480 mA	1048576 words		COMMON	5	5	8		SIP30,.2		DRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	Tin/Lead (Sn/Pb)	SINGLE				12.7 mm			Not Qualified	8388608 bit			e0	.008 Amp		100 ns
TC51V4260BJL-80	Toshiba	OTHER DRAM		40	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND			262144 words			3.3		16	SMALL OUTLINE				1.27 mm			256KX16	256K			DUAL	1	R-PDSO-J40	3.6 V	3.7 mm		10.16 mm	Not Qualified	4194304 bit	3 V				26.04 mm	80 ns
TC59SM816CMBL-75	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES		3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel		16MX16	16M	0 Cel		BOTTOM	1	R-PBGA-B60	3.6 V	1.2 mm		7.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH			15.72 mm	5.4 ns
THM325120ASG-80	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words			5		16	MICROELECTRONIC ASSEMBLY					70 Cel		1MX16	1M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				80 ns
THMY7216C1EG-80H	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		16MX72	16M	0 Cel		DUAL	1	R-XDMA-N168	3.45 V				Not Qualified	1207959552 bit	3.15 V	AUTO/SELF REFRESH				6 ns
THMR1E16-7	Toshiba	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words			2.5		18	MICROELECTRONIC ASSEMBLY							128MX18	128M			DUAL	1	R-XDMA-N184	2.63 V				Not Qualified	2415919104 bit	2.37 V
THM362040AS-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			5		36	MICROELECTRONIC ASSEMBLY		18			70 Cel		2MX36	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	75497472 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH				70 ns
THLY64N11A70L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	680 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V	25.4 mm	143 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH		.004 Amp		5.4 ns
THMY1GE0SB75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	9663676416 bit	3 V	AUTO/SELF REFRESH				6 ns
TC5117405BSJ-60	Toshiba	EDO DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		110 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24					Not Qualified	16777216 bit			e0	.001 Amp		60 ns
TC511665JL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		65536 words			5		16	SMALL OUTLINE				1.27 mm	70 Cel		64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		26.04 mm	100 ns
TC524165TR-60	Toshiba	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST EDO AND PIPELINED PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			5		16	SMALL OUTLINE, THIN PROFILE				.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		23.45 mm	60 ns
THM321020S-80	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	MOS	NO LEAD	ASYNCHRONOUS		1048576 words			5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	1MX32	1M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				80 ns
TC51V4400ASJL-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words			3.3		4	SMALL OUTLINE				1.27 mm	70 Cel		1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	3.6 V	3.75 mm		7.7 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	e0		17.15 mm	80 ns
THM3210B5BS-70	Toshiba	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		300 mA	1048576 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel		SINGLE		R-PSMA-N72		17.78 mm			Not Qualified	33554432 bit				.002 Amp		70 ns
TC514266AJ-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE				1.27 mm	70 Cel		256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.55 mm		7.7 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		17.15 mm	70 ns
TC51V4400AJL-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		60 mA	1048576 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ20/26,.4		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20					Not Qualified	4194304 bit			e0	.00015 Amp		80 ns
TC524257J-12	Toshiba	PAGE MODE DRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE				1.27 mm	70 Cel		256KX4	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-J32	5.5 V	3.6 mm		10.2 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH	e0		21 mm	120 ns
TMM41256AT-15	Toshiba	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND		65 mA	262144 words		SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53		DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18					Not Qualified	262144 bit			e0			150 ns
TC5165405BFT-50	Toshiba	EDO DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	16777216 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V		e0	.0005 Amp	20.95 mm	50 ns
THLY6416G1FG-80L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1440 mA	16777216 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V		125 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		.008 Amp		6 ns
TH8D362000UA-70L	Toshiba	DRAM CARD	COMMERCIAL	88			UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	MOS	UNSPECIFIED	ASYNCHRONOUS		2097152 words			5		36	MICROELECTRONIC ASSEMBLY					55 Cel	3-STATE	2MX36	2M	0 Cel		UNSPECIFIED	1	X-XXMA-X88					Not Qualified	75497472 bit		RAS ONLY/CAS BEFORE RAS REFRESH; BYTE ACCESS				70 ns
TC514400ATR-70	Toshiba	OTHER DRAM		20	TSOP2-R		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			1048576 words			5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm			1MX4	1M			DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		7.7 mm	Not Qualified	4194304 bit	4.5 V				17.14 mm	70 ns
TMM4164AP-20	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3		DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16					Not Qualified	65536 bit			e0			200 ns
THL64V8035BTG-5	Toshiba	EDO DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144	3.47 V				Not Qualified	536870912 bit	3.13 V					50 ns
THM91070L-10	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		9	MICROELECTRONIC ASSEMBLY					70 Cel		1MX9	1M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30	5.5 V				Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			100 ns
TC514410ASJ-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words			5		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm		7.7 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		17.15 mm	70 ns
THM41001L-10	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	25		512		PLASTIC/EPOXY		NO		CMOS			240 mA	1048576 words		SEPARATE	5	5	4		SIP25,.2		DRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	SINGLE							Not Qualified	4194304 bit			e0			100 ns
TC51V18325BFT-60	Toshiba	EDO DRAM	COMMERCIAL	70	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		524288 words			3.3		32	SMALL OUTLINE, THIN PROFILE				.65 mm	70 Cel		512KX32	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G70	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		23.49 mm	60 ns
TC511665BJ-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		65536 words			5		16	SMALL OUTLINE				1.27 mm	70 Cel		64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		26.04 mm	80 ns
TC514265DJ-50	Toshiba	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		130 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J40					Not Qualified	4194304 bit			e0	.001 Amp		50 ns
THL64V8015ATG-5S	Toshiba	EDO DRAM MODULE	COMMERCIAL	144		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	8MX64	8M	0 Cel		ZIG-ZAG	1	R-XZMA-N144	3.47 V				Not Qualified	536870912 bit	3.13 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH				50 ns
TC514800AZ-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		75 mA	524288 words	NO	COMMON	5	5	8	IN-LINE	ZIP28,.1		DRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T28					Not Qualified	4194304 bit			e0	.001 Amp		100 ns
TC514260BFT-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			5		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		18.41 mm	70 ns
TC5165405AJ-40	Toshiba	EDO DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		16777216 words			3.3		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel		DUAL	1	R-PDSO-J32	3.6 V	3.7 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			20.96 mm	40 ns
THM321000AS-80	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words			5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel		1MX32	1M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	33554432 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH				80 ns
TC524256Z-10	Toshiba	PAGE MODE DRAM	COMMERCIAL	28	ZIP		RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		4	IN-LINE				1.27 mm	70 Cel		256KX4	256K	0 Cel	TIN LEAD	ZIG-ZAG	2	R-PZIP-T28	5.5 V	10.16 mm			Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH	e0		36.2 mm	100 ns
TC59SM808CMB-80	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	YES		3.3		8	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel		32MX8	32M	0 Cel		BOTTOM	1	R-PBGA-B60	3.6 V	1.2 mm		7.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH			15.72 mm	6 ns
TC51V4260BFT-80	Toshiba	OTHER DRAM		40	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			262144 words			3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm			256KX16	256K			DUAL	1	R-PDSO-G40	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V				18.41 mm	80 ns
THM3610B0AS-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		330 mA	1048576 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	0 Cel		SINGLE		R-PSMA-N72		17.78 mm			Not Qualified	37748736 bit				.002 Amp		70 ns
TC51V4265DFTS-70	Toshiba	EDO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEELF REFRESH	e0		18.41 mm	70 ns
TC514100AP-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE				2.54 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	4.4 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		22 mm	60 ns
TC511001J-12	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		50 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20					Not Qualified	1048576 bit			e0	.001 Amp		120 ns
TC51V4400AFTL-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words			3.3		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G20	3.6 V	1.2 mm		7.7 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	e0		17.14 mm	80 ns
TC514256BTR-70	Toshiba	OTHER DRAM		24	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			262144 words			5		4	SMALL OUTLINE, THIN PROFILE				.5 mm			256KX4	256K			DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		6 mm	Not Qualified	1048576 bit	4.5 V				14.4 mm	70 ns
TC59G1631AFB-80	Toshiba	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words	YES		3.3		32	FLATPACK, LOW PROFILE				.65 mm	70 Cel		512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.27 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0		20 mm	7.5 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.