Toshiba DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
THM88020ATS-80	Toshiba	DRAM MODULE		30	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			8388608 words						8	SMALL OUTLINE							8MX8	8M			DUAL	1	R-PDSO-G30					Not Qualified	67108864 bit							80 ns
THL321010ATS-7L	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			1048576 words						32	SMALL OUTLINE							1MX32	1M			DUAL	1	R-PDSO-G72					Not Qualified	33554432 bit							70 ns
TC5116165CFT-60	Toshiba	EDO DRAM	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words				5		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		1MX16	1M	0 Cel		DUAL	1	R-PDSO-G44	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				20.95 mm	60 ns
TC5116100BVK-70	Toshiba	OTHER DRAM							FAST PAGE		1	CMOS				16777216 words				5		1								16MX1	16M				1		5.5 V				Not Qualified	16777216 bit	4.5 V						70 ns
TC5117445BST-60	Toshiba	OTHER DRAM		20	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			4194304 words				5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm			4MX4	4M			DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		7.7 mm	Not Qualified	16777216 bit	4.5 V					17.14 mm	60 ns
TC514100AZL-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words				5		1	IN-LINE				1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm			Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			25.8 mm	80 ns
TC524165SF-70	Toshiba	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST EDO AND PIPELINED PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH				.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	3 mm		11.2 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			25 mm	70 ns
THMR2N2Z-8	Toshiba	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES	COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40		DRAMs	1 mm		3-STATE	32MX16	32M			DUAL	1	R-XDMA-N184	2.63 V	34.93 mm	800 MHz	4.8 mm	Not Qualified	536870912 bit	2.37 V	SELF CONTAINED REFRESH				133.35 mm	45 ns
TC514900AFT-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		524288 words				5		9	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		512KX9	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28	5.5 V	1.2 mm		10.16 mm	Not Qualified	4718592 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			18.41 mm	70 ns
TC59WM807BFT-80	Toshiba	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE				.65 mm	70 Cel		32MX8	32M	0 Cel		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH				22.22 mm	.8 ns
TC5117445BSJ	Toshiba	EDO DRAM MODULE							FAST PAGE WITH EDO		1	CMOS		ASYNCHRONOUS		4194304 words						4								4MX4	4M				1						Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					60 ns
THM322020CS-50	Toshiba	DRAM MODULE									1	CMOS				2097152 words						32								2MX32	2M				1						Not Qualified	67108864 bit							50 ns
TC514100AFT-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				5		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		7.7 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			17.14 mm	70 ns
TC514260BFT-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			18.41 mm	80 ns
THM94000AS-60	Toshiba	DRAM MODULE									1					4194304 words						9								4MX9	4M				1						Not Qualified	37748736 bit							60 ns
TC59SM916AFTL-80	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	6 ns
TC51V18325BFT-70	Toshiba	EDO DRAM	COMMERCIAL	70	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		524288 words				3.3		32	SMALL OUTLINE, THIN PROFILE				.65 mm	70 Cel		512KX32	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G70	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			23.49 mm	70 ns
TMM41257AZ-12	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		72 mA	262144 words			SEPARATE	5	5	1	IN-LINE	ZIP16,.1		DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T16					Not Qualified	262144 bit			e0				120 ns
TC511000BFT-10	Toshiba	FAST PAGE DRAM		20	TSOP1		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			1048576 words				5		1	SMALL OUTLINE, THIN PROFILE				.5 mm			1MX1	1M			DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		6 mm	Not Qualified	1048576 bit	4.5 V					14.4 mm	100 ns
TC514100AFTL-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				5		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		7.7 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	e0			17.14 mm	60 ns
THM361010ASG-80	Toshiba	DRAM MODULE									1	CMOS				1048576 words						36								1MX36	1M				1						Not Qualified	37748736 bit							80 ns
TC5117800CJ-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		2097152 words				5		8	SMALL OUTLINE				1.27 mm	70 Cel		2MX8	2M	0 Cel		DUAL	1	R-PDSO-J28	5.5 V	3.7 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				18.42 mm	60 ns
THMY64E11A75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		16	MICROELECTRONIC ASSEMBLY				1.27 mm	70 Cel		8MX16	8M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V	25.53 mm		2.8 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH; WD-MAX				133.35 mm	5.4 ns
TC59SM804BFT-75	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	160 mA	67108864 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	64MX4	64M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	5.4 ns
THMY7264E0LEG-75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6853 mA	67108864 words		YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V		133 MHz		Not Qualified	4831838208 bit	3 V	AUTO/SELF REFRESH		.049 Amp			5.4 ns
THMY6480H1EG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	720 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V		125 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH		.004 Amp			6 ns
TC59S6432DFTL-60	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	155 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20		DRAMs	.5 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G86	3.6 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	5.4 ns
THLG641021AFG-8	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		670 mA	1048576 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX64	1M	0 Cel		DUAL		R-PDMA-N144			125 MHz		Not Qualified	67108864 bit				.008 Amp			7.5 ns
THM94000ASG-70	Toshiba	DRAM MODULE									1					4194304 words						9								4MX9	4M				1						Not Qualified	37748736 bit							70 ns
TC511001AZ-10	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	19	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		1	IN-LINE				1.27 mm	70 Cel		1MX1	1M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T19	5.5 V	10.16 mm			Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			25.8 mm	100 ns
TC514260BJLL-80	Toshiba	FAST PAGE DRAM		40	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1		J BEND			262144 words				5		16	SMALL OUTLINE				1.27 mm			256KX16	256K			DUAL	1	R-PDSO-J40	5.5 V	3.7 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V					26.04 mm	80 ns
THM322020AS-80	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words				5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel		2MX32	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	67108864 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					80 ns
TC511001AZ-70	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	19	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		1	IN-LINE				1.27 mm	70 Cel		1MX1	1M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T19	5.5 V	10.16 mm			Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			25.8 mm	70 ns
THMY51E2SA70	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6489 mA	134217728 words		YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V	43.05 mm	142 MHz	6.35 mm	Not Qualified	9663676416 bit	3 V	AUTO/SELF REFRESH		.067 Amp		133.35 mm	5.4 ns
THM328020S-60	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words				5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel		8MX32	8M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	268435456 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					60 ns
TC59S6432CFT-60	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	155 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20		DRAMs	.5 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G86	3.6 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	5.4 ns
TC5116160AJ-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		70 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J42					Not Qualified	16777216 bit			e0	.001 Amp			80 ns
TC5117400CST-40	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel		DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		7.7 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				17.14 mm	40 ns
TC59WM707FT-70	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE				.65 mm	70 Cel		16MX8	16M	0 Cel		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH				22.22 mm	.75 ns
THLD25N11B80	Toshiba	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N200	2.7 V	31.75 mm	125 MHz	3.8 mm	Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH				67.6 mm	.8 ns
TC59SM904AFTL-70	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	128MX4	128M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	5.4 ns
TC5118180BJ-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	42	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words				5		18	SMALL OUTLINE				1.27 mm	70 Cel		1MX18	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J42	5.5 V	3.7 mm		10.16 mm	Not Qualified	18874368 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			27.31 mm	70 ns
TC51V16400BST-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		70 mA	4194304 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24					Not Qualified	16777216 bit			e0	.0005 Amp			70 ns
TC514280BJ-70	Toshiba	FAST PAGE DRAM		40	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND			262144 words				5		18	SMALL OUTLINE				1.27 mm			256KX18	256K		TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.7 mm		10.16 mm	Not Qualified	4718592 bit	4.5 V		e0			26.04 mm	70 ns
THM334080ASG-70	Toshiba	DRAM MODULE									1	CMOS				4194304 words						33								4MX33	4M				1						Not Qualified	138412032 bit							70 ns
THMR1E8-6	Toshiba	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words				2.5		18	MICROELECTRONIC ASSEMBLY							64MX18	64M			DUAL	1	R-XDMA-N184	2.63 V				Not Qualified	1207959552 bit	2.37 V
TC514265DFT-70	Toshiba	EDO DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		95 mA	262144 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40					Not Qualified	4194304 bit			e0	.001 Amp			70 ns
THM325120ASG-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				5		16	MICROELECTRONIC ASSEMBLY					70 Cel		1MX16	1M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.