Toshiba DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
TC514268AJ-80	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ		RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words				5		4	SMALL OUTLINE				1.27 mm	70 Cel		256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.55 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					17.145 mm	80 ns
TC59WM703FT-75	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		4	SMALL OUTLINE, THIN PROFILE				.65 mm	70 Cel		32MX4	32M	0 Cel		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.75 ns
TC511000J-12	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		50 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20					Not Qualified	1048576 bit			e0			.001 Amp			120 ns
TC59S6416AFT-10	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			100 MHz		Not Qualified	67108864 bit			e0				1,2,4,8		7.5 ns
TC514266AJ-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words				5		4	SMALL OUTLINE				1.27 mm	70 Cel		256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.55 mm		7.7 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					17.15 mm	80 ns
TC514256AJ-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words				5		4	SMALL OUTLINE				1.27 mm	70 Cel		256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.55 mm		7.7 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					17.15 mm	100 ns
THL321010ATG-6	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1		GULL WING			1048576 words						32	SMALL OUTLINE							1MX32	1M			DUAL	1	R-PDSO-G72					Not Qualified	33554432 bit									60 ns
THM322500AS-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		524288 words				5		16	MICROELECTRONIC ASSEMBLY					70 Cel		512KX16	512K	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							70 ns
TC59SM904AFTL-75	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	128MX4	128M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	5.4 ns
THLY644031FG-10	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	500 mA	4194304 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX64	4M	0 Cel		ZIG-ZAG	1	R-XZMA-N144	3.45 V	25.4 mm	100 MHz		Not Qualified	268435456 bit	3.15 V	AUTO/SELF REFRESH				.004 Amp			9.5 ns
THM362020ASG-80	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words				5		36	MICROELECTRONIC ASSEMBLY		18			70 Cel		2MX36	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	75497472 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH							80 ns
TC514900AZLL-80	Toshiba	FAST PAGE DRAM		28	ZIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE			524288 words		YES		5		9	IN-LINE				1.27 mm			512KX9	512K			ZIG-ZAG	1	R-PZIP-T28	5.5 V	10.16 mm			Not Qualified	4718592 bit	4.5 V	SELF REFRESH						36.2 mm	80 ns
TC514100ASJ-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words				5		1	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm		7.7 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					17.15 mm	100 ns
THM321000AS-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel		1MX32	1M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	33554432 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH							70 ns
THM402020SG-10	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	MOS	NO LEAD	ASYNCHRONOUS		2097152 words				5		40	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	2MX40	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	83886080 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							100 ns
TC59S6432DFT-70	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	140 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20		DRAMs	.5 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G86	3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	5.4 ns
THLY12N01A80L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V		125 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.008 Amp			6 ns
TC524258BFT-10	Toshiba	VIDEO DRAM		28	TSOP2		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			262144 words						4	SMALL OUTLINE, THIN PROFILE				1.27 mm			256KX4	256K			DUAL	2	R-PDSO-G28		1.2 mm		10.16 mm	Not Qualified	1048576 bit								18.41 mm	100 ns
TC511000BFTL-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	TSOP1	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words				5		1	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		1MX1	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		6 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					14.4 mm	60 ns
TC51V17805CJ-60	Toshiba	EDO DRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		2097152 words				3.3		8	SMALL OUTLINE				1.27 mm	70 Cel		2MX8	2M	0 Cel		DUAL	1	R-PDSO-J28	3.6 V	3.7 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/ CAS BEFORE RAS/HIDDEN REFRESH						18.42 mm	60 ns
TC514101AJ-60	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words				5		1	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm		8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					17.15 mm	60 ns
TC5116100BZ-70	Toshiba	FAST PAGE DRAM		24	ZIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE			16777216 words				5		1	IN-LINE				1.27 mm			16MX1	16M			ZIG-ZAG	1	R-PZIP-T24	5.5 V	12.07 mm			Not Qualified	16777216 bit	4.5 V							30.88 mm	70 ns
TC59SM754AFT-80	Toshiba	SYNCHRONOUS DRAM		54	SOP		RECTANGULAR	PLASTIC/EPOXY		YES			GULL WING										SMALL OUTLINE											DUAL		R-PDSO-G54					Not Qualified
TC514100AP-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words				5		1	IN-LINE				2.54 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	4.4 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					22 mm	100 ns
TC59LM906AMG-37	Toshiba	DDR1 DRAM	OTHER	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS	BALL	SYNCHRONOUS	450 mA	67108864 words	2,4	YES	COMMON	2.5	1.5/1.8,2.5	8	GRID ARRAY, THIN PROFILE	BGA60,6X15,40		DRAMs	1 mm	85 Cel	3-STATE	64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B64	2.625 V	1.2 mm	266 MHz	12.7 mm	Not Qualified	536870912 bit	2.375 V	AUTO/SELF REFRESH	e1	NOT SPECIFIED	250	.09 Amp	2,4	16.5 mm	.5 ns
THM81070AL-80	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		8	MICROELECTRONIC ASSEMBLY					70 Cel		1MX8	1M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30	5.5 V				Not Qualified	8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0						80 ns
THM328020BSG-60	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		896 mA	8388608 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX32	8M	0 Cel		SINGLE		R-PSMA-N72		25.4 mm			Not Qualified	268435456 bit						.016 Amp			60 ns
TC59S6404AFT-10	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			16777216 words	1,2,4,8,FP		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			100 MHz		Not Qualified	67108864 bit			e0				1,2,4,8		7.5 ns
TC59S6408CFTL-80	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	110 mA	8388608 words	1,2,4,8,FP		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	67108864 bit	3 V		e0			.001 Amp	1,2,4,8	22.22 mm	6 ns
THL321010ATG-7L	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1		GULL WING			1048576 words						32	SMALL OUTLINE							1MX32	1M			DUAL	1	R-PDSO-G72					Not Qualified	33554432 bit									70 ns
TC59SM716AFTL-75	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	160 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	5.4 ns
THMY643281EG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS	2880 mA	67108864 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-X168	3.6 V	30.48 mm	125 MHz	4 mm	Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH				.016 Amp		133.35 mm	6 ns
TC511665Z-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		16	IN-LINE				1.27 mm	70 Cel		64KX16	64K	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.07 mm			Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					51.2 mm	100 ns
THM402020ASG-70	Toshiba	DRAM MODULE									1					2097152 words						40								2MX40	2M				1						Not Qualified	83886080 bit									70 ns
THM362020ASG-60	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words				5		36	MICROELECTRONIC ASSEMBLY		18			70 Cel		2MX36	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	75497472 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH							60 ns
THM324080AS-80	Toshiba	DRAM MODULE									1	CMOS				4194304 words						32								4MX32	4M				1						Not Qualified	134217728 bit									80 ns
TMHY6440A1AEG-12A	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1224 mA	4194304 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel		DUAL		R-PDMA-N168		27.94 mm	83 MHz		Not Qualified	268435456 bit						.032 Amp			9 ns
TC59SM716AFT-70	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	170 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	5.4 ns
THLY51N61C70	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2720 mA	67108864 words		YES	COMMON	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	64MX8	64M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V	31.88 mm	143 MHz	3.8 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH; WD-MAX				.016 Amp		67.6 mm	5.4 ns
TMM41464AP-10	Toshiba	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		80 mA	65536 words			COMMON	5	5	4	IN-LINE	DIP18,.3		DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	262144 bit			e0						100 ns
TC51V4260BFTL-70	Toshiba	OTHER DRAM		40	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			262144 words				3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm			256KX16	256K			DUAL	1	R-PDSO-G40	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V							18.41 mm	70 ns
THL324010TS-6	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			4194304 words						32	SMALL OUTLINE							4MX32	4M			DUAL	1	R-PDSO-G72					Not Qualified	134217728 bit									60 ns
TC51V17400BST-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	4194304 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24					Not Qualified	16777216 bit			e0			.0005 Amp			70 ns
TC524165FT-70	Toshiba	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST EDO AND PIPELINED PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, THIN PROFILE				.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					23.45 mm	70 ns
THLY51N61C75L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2560 mA	67108864 words		YES	COMMON	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	64MX8	64M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V	31.88 mm	133 MHz	3.8 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH; WD-MAX				.016 Amp		67.6 mm	5.4 ns
THMR2N16-6	Toshiba	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES	COMMON	2.5	2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40		DRAMs	1 mm		3-STATE	256MX16	256M			DUAL	1	R-XDMA-N184	2.63 V	34.93 mm	600 MHz	8 mm	Not Qualified	4294967296 bit	2.37 V	SELF CONTAINED REFRESH						133.35 mm	53 ns
THMR1E16E-7	Toshiba	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40		DRAMs	1 mm		3-STATE	128MX18	128M			DUAL	1	R-XDMA-N184	2.63 V	31.75 mm	711 MHz	8 mm	Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH; WD-MAX						133.35 mm	45 ns
THM161000ASG-60	Toshiba	DRAM MODULE									1					1048576 words						16								1MX16	1M				1						Not Qualified	16777216 bit									60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.