Toshiba DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
TC5116405CST-50	Toshiba	EDO DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel		DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		7.7 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.14 mm	50 ns
THMY51E2SA75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6129 mA	134217728 words		YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V	43.05 mm	133 MHz	6.35 mm	Not Qualified	9663676416 bit	3 V	AUTO/SELF REFRESH				.067 Amp		133.35 mm	5.4 ns
TC514100AJL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words				5		1	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm		8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					17.15 mm	100 ns
TC5116100BZ-60	Toshiba	FAST PAGE DRAM		24	ZIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE			16777216 words				5		1	IN-LINE				1.27 mm			16MX1	16M			ZIG-ZAG	1	R-PZIP-T24	5.5 V	12.07 mm			Not Qualified	16777216 bit	4.5 V							30.88 mm	60 ns
THM65V4075ATG-4	Toshiba	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	640 mA	4194304 words		NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel		DUAL	1	R-XDMA-N168	3.47 V	25.4 mm			Not Qualified	268435456 bit	3.13 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.002 Amp			40 ns
TC51V4260BJLL-80	Toshiba	OTHER DRAM		40	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND			262144 words				3.3		16	SMALL OUTLINE				1.27 mm			256KX16	256K			DUAL	1	R-PDSO-J40	3.6 V	3.7 mm		10.16 mm	Not Qualified	4194304 bit	3 V							26.04 mm	80 ns
TC5117900AJ-60	Toshiba	OTHER DRAM		32	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND			2097152 words				5		9	SMALL OUTLINE				1.27 mm			2MX9	2M			DUAL	1	R-PDSO-J32	5.5 V	3.6 mm		10.2 mm	Not Qualified	18874368 bit	4.5 V							21 mm	60 ns
TC51V16405BSJ-60	Toshiba	OTHER DRAM		26	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND			4194304 words				3.3		4	SMALL OUTLINE							4MX4	4M			DUAL	1	R-PDSO-J26	3.6 V				Not Qualified	16777216 bit	3 V								60 ns
TC514273BJ-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE				1.27 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.7 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					26.04 mm	80 ns
TC59LM806BFT-30	Toshiba	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	150 mA	33554432 words	2,4	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46		DRAMs	.65 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.002 Amp	2,4	22.22 mm	1 ns
TC5118160BFT-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		155 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44					Not Qualified	16777216 bit			e0			.001 Amp			70 ns
TC51V4400ASJ-80	Toshiba	OTHER DRAM		20	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND			1048576 words				3.3		4	SMALL OUTLINE				1.27 mm			1MX4	1M			DUAL	1	R-PDSO-J20	3.6 V	3.75 mm		7.7 mm	Not Qualified	4194304 bit	3 V							17.15 mm	80 ns
THM94000ASG-60	Toshiba	DRAM MODULE									1					4194304 words						9								4MX9	4M				1						Not Qualified	37748736 bit									60 ns
THMY6416H1EG-75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1520 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V		133 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.008 Amp			5.4 ns
THMD51E01B70	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V		143 MHz		Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH							.75 ns
TC514900AZL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		75 mA	524288 words		NO	COMMON	5	5	9	IN-LINE	ZIP28,.1		DRAMs	1.27 mm	70 Cel	3-STATE	512KX9	512K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T28					Not Qualified	4718592 bit			e0			.0003 Amp			100 ns
THM3620C0AS-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		304 mA	2097152 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX36	2M	0 Cel		SINGLE		R-PSMA-N72		17.78 mm			Not Qualified	75497472 bit						.004 Amp			70 ns
TC514402AJ-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words				5		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm		8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					17.15 mm	100 ns
TC59SM816BFTL-70	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	170 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	5.4 ns
TC5117405BSJ-70	Toshiba	EDO DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		95 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24					Not Qualified	16777216 bit			e0			.001 Amp			70 ns
THMY25E10A70	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3429 mA	33554432 words		YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V		143 MHz		Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH				.049 Amp			5.4 ns
TC514190BJ-80	Toshiba	OTHER DRAM		40	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND			262144 words				5		18	SMALL OUTLINE				1.27 mm			256KX18	256K		TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.7 mm		10.16 mm	Not Qualified	4718592 bit	4.5 V		e0					26.04 mm	80 ns
THM328025BSG-70	Toshiba	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		776 mA	8388608 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX32	8M	0 Cel		SINGLE		R-PSMA-N72		25.4 mm			Not Qualified	268435456 bit						.016 Amp			70 ns
TC59LM818DMBI-40	Toshiba	DDR1 DRAM	INDUSTRIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			16777216 words	2,4		COMMON		1.8,2.5	18	GRID ARRAY	BGA60,6X15,40		DRAMs	1 mm	85 Cel	3-STATE	16MX18	16M	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B60			200 MHz		Not Qualified	301989888 bit			e0				2,4		.6 ns
TC59S1604	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL						DUAL BANK PAGE BURST		1	CMOS		SYNCHRONOUS		4194304 words		YES		3.3		4						70 Cel		4MX4	4M	0 Cel			1		3.6 V				Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH							60 ns
TC514400APL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		4	IN-LINE				2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.4 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					24.6 mm	100 ns
THMY648071EG-10	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1		NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		8MX64	8M	0 Cel		DUAL	1	R-XDMA-N168	3.45 V				Not Qualified	536870912 bit	3.15 V	AUTO/SELF REFRESH							8.5 ns
THM361070AS-80	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				5		36	MICROELECTRONIC ASSEMBLY					70 Cel		1MX36	1M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	37748736 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH							80 ns
TC59LM818DMG-40	Toshiba	DDR1 DRAM	OTHER	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS	BALL	SYNCHRONOUS		16777216 words	2,4	YES	COMMON	2.5	1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA60,6X15,40		DRAMs	1 mm	85 Cel	3-STATE	16MX18	16M	0 Cel		BOTTOM	1	R-PBGA-B60	2.625 V	1.2 mm	200 MHz	9 mm	Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		2,4	16.5 mm	.65 ns
THM92500AS-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		262144 words				5		9	MICROELECTRONIC ASSEMBLY					70 Cel		256KX9	256K	0 Cel		SINGLE	1	R-XSMA-N30	5.5 V				Not Qualified	2359296 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							70 ns
TC511000JL-12	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		50 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20					Not Qualified	1048576 bit			e0			.0003 Amp			120 ns
THM91000AL-10	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		9	MICROELECTRONIC ASSEMBLY					70 Cel		1MX9	1M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30	5.5 V				Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0						100 ns
THM361020ATS-80	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			1048576 words						36	SMALL OUTLINE							1MX36	1M			DUAL	1	R-PDSO-G72					Not Qualified	37748736 bit									80 ns
TC59SM816BFT-80	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	150 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	6 ns
TC59LM818DMBI-37	Toshiba	DDR1 DRAM	INDUSTRIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS	BALL	SYNCHRONOUS		16777216 words				2.5		18	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		16MX18	16M	-40 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60	2.625 V	1.2 mm		9 mm	Not Qualified	301989888 bit	2.375 V	AUTO REFRESH	e0					16.5 mm	.65 ns
THM402040SG-10	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	MOS	NO LEAD	ASYNCHRONOUS		2097152 words				5		40	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	2MX40	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	83886080 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							100 ns
TC514170BJ-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		55 mA	262144 words		NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J40					Not Qualified	4194304 bit			e0			.001 Amp			100 ns
TC514280BZ-80	Toshiba	FAST PAGE DRAM		40	ZIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE			262144 words				5		18	IN-LINE				1.27 mm			256KX18	256K		TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.07 mm			Not Qualified	4718592 bit	4.5 V		e0					51.2 mm	80 ns
TC514280BFT-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		85 mA	262144 words		NO	COMMON	5	5	18	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	256KX18	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40					Not Qualified	4718592 bit			e0			.001 Amp			100 ns
TMM4164AP-15	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			65536 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3		DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16					Not Qualified	65536 bit			e0						150 ns
TC511001Z-10	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		60 mA	1048576 words			SEPARATE	5	5	1	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20					Not Qualified	1048576 bit			e0			.001 Amp			100 ns
TC51V17800BNTS-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		125 mA	2097152 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46		DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28					Not Qualified	16777216 bit			e0			.0002 Amp			60 ns
TC5116100BTR-50	Toshiba	OTHER DRAM		28	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			16777216 words				5		1	SMALL OUTLINE							16MX1	16M			DUAL	1	R-PDSO-G28	5.5 V				Not Qualified	16777216 bit	4.5 V								50 ns
TC59S6416BFTL-80	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	140 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	6 ns
THM3620C0AS-80	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words				5		36	MICROELECTRONIC ASSEMBLY		18			70 Cel		2MX36	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	75497472 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH							80 ns
TC524256BZ-80	Toshiba	VIDEO DRAM	COMMERCIAL	28	ZIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		4	IN-LINE				1.27 mm	70 Cel		256KX4	256K	0 Cel	TIN LEAD	ZIG-ZAG	2	R-PZIP-T28	5.5 V	10.16 mm			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					36.2 mm	80 ns
THM322020AS-60	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words				5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel		2MX32	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	67108864 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH							60 ns
TC514102ASJ-80	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words				5		1	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm		7.7 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					17.15 mm	80 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.