Toshiba DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
TC51V18165CJ-50	Toshiba	EDO DRAM	COMMERCIAL	42	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words				3.3		16	SMALL OUTLINE				1.27 mm	70 Cel			1MX16	1M	0 Cel		DUAL	1	R-PDSO-J42	3.6 V	3.7 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						27.31 mm	50 ns
TC514256BTR-80	Toshiba	OTHER DRAM		24	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			262144 words				5		4	SMALL OUTLINE, THIN PROFILE				.5 mm				256KX4	256K			DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		6 mm	Not Qualified	1048576 bit	4.5 V							14.4 mm	80 ns
TC5116100CSJ-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		16777216 words				5		1	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	16MX1	16M	0 Cel		DUAL	1	R-PDSO-J24	5.5 V	3.7 mm		7.7 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.15 mm	60 ns
THMY641051AEG-12	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		500 mA	1048576 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel		3-STATE	1MX64	1M	0 Cel		DUAL		R-PDMA-N168			83 MHz		Not Qualified	67108864 bit						.008 Amp			9 ns
TC514256BZ-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	19	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		4	IN-LINE				1.27 mm	70 Cel			256KX4	256K	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T19	5.5 V	10.16 mm			Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					25.8 mm	60 ns
TC59WM807BFT-70	Toshiba	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE				.65 mm	70 Cel			32MX8	32M	0 Cel		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.75 ns
TC5117800CFT-50	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		2097152 words				5		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel			2MX8	2M	0 Cel		DUAL	1	R-PDSO-G28	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						18.41 mm	50 ns
TC5164405AFT-60	Toshiba	EDO DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words				3.3		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel		DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	CAS BEFORE RAS/HIDDEN REFRESH						20.95 mm	60 ns
TC59RM718MB-7	Toshiba	RAMBUS DRAM		62	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA62,12X9,40/32		DRAMs	.8 mm			3-STATE	8MX18	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1.2 mm	711 MHz	11.66 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0					12.92 mm
TC5165165AFTS-40	Toshiba	EDO DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	160 mA	4194304 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	8	DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0003 Amp		20.95 mm	40 ns
TC59RM716RB-8	Toshiba	RAMBUS DRAM		62	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA62,12X9,40/32		DRAMs	.8 mm		YES	3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1.2 mm	800 MHz	11.66 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0					12.92 mm
TC59R0409VK	Toshiba	RAMBUS DRAM									1	CMOS				524288 words				5		9									512KX9	512K				1		5.5 V				Not Qualified	4718592 bit	4.5 V
THMY7280H1EG-75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	950 mA	8388608 words		YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel		3-STATE	8MX72	8M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V	25.4 mm	133 MHz	2.8 mm	Not Qualified	603979776 bit	3 V	AUTO/SELF REFRESH				.005 Amp		133.35 mm	5.4 ns
THM328020S-80	Toshiba	DRAM MODULE									1	CMOS				8388608 words						32									8MX32	8M				1						Not Qualified	268435456 bit									80 ns
TC514900AZL-80	Toshiba	FAST PAGE DRAM		28	ZIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE			524288 words				5		9	IN-LINE				1.27 mm				512KX9	512K		TIN LEAD	ZIG-ZAG	1	R-PZIP-T28	5.5 V	10.16 mm			Not Qualified	4718592 bit	4.5 V		e0					36.2 mm	80 ns
TC514256BFTL-80	Toshiba	OTHER DRAM		20	TSOP1		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			262144 words				5		4	SMALL OUTLINE, THIN PROFILE				.5 mm				256KX4	256K			DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		6 mm	Not Qualified	1048576 bit	4.5 V							14.4 mm	80 ns
TC514900AFTL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	SOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		75 mA	524288 words		NO	COMMON	5	5	9	SMALL OUTLINE	SO28(UNSPEC)		DRAMs		70 Cel		3-STATE	512KX9	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28					Not Qualified	4718592 bit			e0			.0003 Amp			100 ns
THMR2E8Z-7	Toshiba	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40		DRAMs	1 mm			3-STATE	128MX18	128M			DUAL	1	R-XDMA-N184	2.63 V	34.93 mm	711 MHz	4.8 mm	Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH						133.35 mm
THM364080CSG-50	Toshiba	DRAM MODULE									1	CMOS				4194304 words						36									4MX36	4M				1						Not Qualified	150994944 bit									50 ns
TC514268AP-70	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	DIP		RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		4	IN-LINE				2.54 mm	70 Cel			256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	5 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0						70 ns
TC514402AZ-70	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		4	IN-LINE				1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm			Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					25.8 mm	70 ns
TC5117445BSJ-60	Toshiba	OTHER DRAM		26	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND			4194304 words				5		4	SMALL OUTLINE								4MX4	4M			DUAL	1	R-PDSO-J26	5.5 V				Not Qualified	16777216 bit	4.5 V								60 ns
THM321000CTSG-50	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			1048576 words						32	SMALL OUTLINE								1MX32	1M			DUAL	1	R-PDSO-G72					Not Qualified	33554432 bit									50 ns
TC5116400FT-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel			4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					18.41 mm	60 ns
THMY1GE2SB75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel			128MX72	128M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	9663676416 bit	3 V	AUTO/SELF REFRESH							5.4 ns
TC514260BZ-70	Toshiba	FAST PAGE DRAM		40	ZIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE			262144 words				5		16	IN-LINE				1.27 mm				256KX16	256K		TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.07 mm			Not Qualified	4194304 bit	4.5 V		e0					51.2 mm	70 ns
TC511002AZ-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	19	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		1	IN-LINE				1.27 mm	70 Cel			1MX1	1M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T19	5.5 V	10.16 mm			Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					25.8 mm	100 ns
TC514410AZ-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		4	IN-LINE				1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm			Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					25.8 mm	100 ns
THMY12E11A70	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		8	MICROELECTRONIC ASSEMBLY				1.27 mm	70 Cel			16MX8	16M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V	34.98 mm		2.8 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm	5.4 ns
THM91020AL70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		9	MICROELECTRONIC ASSEMBLY					70 Cel			1MX9	1M	0 Cel	Tin/Lead (Sn/Pb)	SINGLE	1	R-XSMA-T30	5.5 V				Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	NOT SPECIFIED	NOT SPECIFIED				70 ns
THM91020L-10	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30		512		PLASTIC/EPOXY		NO		CMOS			540 mA	1048576 words			COMMON	5	5	9		SIP30,.2		DRAMs	2.54 mm	70 Cel		3-STATE	1MX9	1M	0 Cel	Tin/Lead (Sn/Pb)	SINGLE				12.7 mm			Not Qualified	9437184 bit			e0			.009 Amp			100 ns
THM3251FOBSG60	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		205 mA	524288 words			COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel		3-STATE	512KX32	512K	0 Cel		SINGLE		R-PSMA-N72					Not Qualified	16777216 bit						.001 Amp			60 ns
TC59S6408FTL-10	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	190 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	22.22 mm	8 ns
THLY641681FG-80L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS		16777216 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				.8 mm	70 Cel			16MX64	16M	0 Cel		DUAL	1	R-XDMA-X144	3.6 V	26.67 mm		3.8 mm	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH						67.6 mm	6 ns
THM321000ATS-70	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			1048576 words						32	SMALL OUTLINE								1MX32	1M			DUAL	1	R-PDSO-G72					Not Qualified	33554432 bit									70 ns
TC511000AZ-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	19	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		1	IN-LINE				1.27 mm	70 Cel			1MX1	1M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T19	5.5 V	10.16 mm			Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					25.8 mm	100 ns
THMY721630BEG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES	COMMON	3.3	3.3	4	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel		DUAL	1	R-XDMA-N168	3.45 V	43.374 mm	125 MHz	4 mm	Not Qualified	67108864 bit	3.15 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm	6.5 ns
THM91070AS-10	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				5		9	MICROELECTRONIC ASSEMBLY					70 Cel			1MX9	1M	0 Cel		SINGLE	1	R-XSMA-N30	5.5 V				Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							100 ns
THM364020S-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words				5		36	MICROELECTRONIC ASSEMBLY		18			70 Cel			4MX36	4M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	150994944 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH							70 ns
THM164020ASG-80	Toshiba	DRAM MODULE									1					4194304 words						16									4MX16	4M				1						Not Qualified	67108864 bit									80 ns
TC514900AJL-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		524288 words				5		9	SMALL OUTLINE				1.27 mm	70 Cel			512KX9	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.7 mm		10.16 mm	Not Qualified	4718592 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	e0					18.42 mm	80 ns
TC5117400BST-50	Toshiba	FAST PAGE DRAM							FAST PAGE		1			ASYNCHRONOUS		4194304 words						4									4MX4	4M				1						Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							50 ns
TC5118160AFT-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	MOS	GULL WING	ASYNCHRONOUS		1048576 words				5		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G44	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					20.95 mm	70 ns
TC514400JL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words				5		4	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm		8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					17.15 mm	100 ns
TC59S6404AFT-7	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			16777216 words	1,2,4,8,FP		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			142 MHz		Not Qualified	67108864 bit			e0				1,2,4,8		5 ns
THMD25E30B75	Toshiba	DDR DRAM MODULE	COMMERCIAL	184			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					70 Cel			32MX72	32M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V				Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH							.75 ns
THM322020ASG-60	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words				5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel			2MX32	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	67108864 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH							60 ns
TC514100ATR-80	Toshiba	OTHER DRAM		20	TSOP2-R		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			4194304 words				5		1	SMALL OUTLINE, THIN PROFILE				1.27 mm				4MX1	4M			DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		7.7 mm	Not Qualified	4194304 bit	4.5 V							17.14 mm	80 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.