Toshiba DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
TC59LM818DMG-33	Toshiba	DDR1 DRAM	OTHER	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS	BALL	SYNCHRONOUS		16777216 words	2,4	YES	COMMON	2.5	1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA60,6X15,40		DRAMs	1 mm	85 Cel		3-STATE	16MX18	16M	0 Cel		BOTTOM	1	R-PBGA-B60	2.625 V	1.2 mm	222 MHz	9 mm	Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		2,4	16.5 mm	.5 ns
THM91000AS-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				5		9	MICROELECTRONIC ASSEMBLY					70 Cel			1MX9	1M	0 Cel		SINGLE	1	R-XSMA-N30	5.5 V				Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							70 ns
THM408020SG-70	Toshiba	DRAM MODULE									1					8388608 words						40									8MX40	8M				1						Not Qualified	335544320 bit									70 ns
THM91070AL-60	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1		THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		9	MICROELECTRONIC ASSEMBLY					70 Cel			1MX9	1M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30	5.5 V				Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0						60 ns
THMY728071EG-10	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1		NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel			8MX72	8M	0 Cel		DUAL	1	R-XDMA-N168	3.45 V				Not Qualified	603979776 bit	3.15 V	AUTO/SELF REFRESH							8.5 ns
THM3610B0AS-60	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		390 mA	1048576 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel		3-STATE	1MX36	1M	0 Cel		SINGLE		R-PSMA-N72		17.78 mm			Not Qualified	37748736 bit						.002 Amp			60 ns
TC5116400BFT-60	Toshiba	OTHER DRAM		28	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			4194304 words				5		4	SMALL OUTLINE								4MX4	4M			DUAL	1	R-PDSO-G28	5.5 V				Not Qualified	16777216 bit	4.5 V								60 ns
THM328020BS-60	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		896 mA	8388608 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel		3-STATE	8MX32	8M	0 Cel		SINGLE		R-PSMA-N72		25.4 mm			Not Qualified	268435456 bit						.016 Amp			60 ns
TC5117900AJ-70	Toshiba	OTHER DRAM		32	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND			2097152 words				5		9	SMALL OUTLINE				1.27 mm				2MX9	2M			DUAL	1	R-PDSO-J32	5.5 V	3.6 mm		10.2 mm	Not Qualified	18874368 bit	4.5 V							21 mm	70 ns
TC514102AJ-80	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words				5		1	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm		8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					17.15 mm	80 ns
THLY641691FG-80L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS	1440 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel		3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-X144	3.6 V	26.67 mm	125 MHz	3.8 mm	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.008 Amp		67.6 mm	6 ns
TC59LM806BFT-24	Toshiba	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	165 mA	33554432 words	2,4	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46		DRAMs	.65 mm	70 Cel		3-STATE	32MX8	32M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.002 Amp	2,4	22.22 mm	.9 ns
THM322500ASG-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		524288 words				5		16	MICROELECTRONIC ASSEMBLY					70 Cel			512KX16	512K	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							70 ns
THM91000AS-80	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				5		9	MICROELECTRONIC ASSEMBLY					70 Cel			1MX9	1M	0 Cel		SINGLE	1	R-XSMA-N30	5.5 V				Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							80 ns
THM91620TS-80	Toshiba	DRAM MODULE		30	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			16777216 words						9	SMALL OUTLINE								16MX9	16M			DUAL	1	R-PDSO-G30					Not Qualified	150994944 bit									80 ns
THMR1E16-8	Toshiba	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words				2.5		18	MICROELECTRONIC ASSEMBLY								128MX18	128M			DUAL	1	R-XDMA-N184	2.63 V				Not Qualified	2415919104 bit	2.37 V
THLY641681FG-10	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS		16777216 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				.8 mm	70 Cel			16MX64	16M	0 Cel		DUAL	1	R-XDMA-X144	3.6 V	26.67 mm		3.8 mm	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH						67.6 mm	7 ns
TC5118165BJ-60	Toshiba	EDO DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		180 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel		3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J42					Not Qualified	16777216 bit			e0			.001 Amp			60 ns
TC5116400CSJ-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel		DUAL	1	R-PDSO-J24	5.5 V	3.7 mm		7.7 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.15 mm	60 ns
TC59SM804CFTL-75	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	160 mA	67108864 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	64MX4	64M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	5.4 ns
TC59SM754AFTL-80	Toshiba	SYNCHRONOUS DRAM		54	SOP		RECTANGULAR	PLASTIC/EPOXY		YES			GULL WING										SMALL OUTLINE												DUAL		R-PDSO-G54					Not Qualified
TC51V17800BNT-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		125 mA	2097152 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46		DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28					Not Qualified	16777216 bit			e0			.0005 Amp			60 ns
THM94020AL-80	Toshiba	DRAM MODULE									1					4194304 words						9									4MX9	4M				1						Not Qualified	37748736 bit									80 ns
TC59YM916BKG32B	Toshiba	RAMBUS DRAM		100	TFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	1450 mA	33554432 words		YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,50/32		DRAMs	.8 mm			3-STATE	32MX16	32M			BOTTOM	1	R-PBGA-B100	1.86 V	1.2 mm		14.56 mm	Not Qualified	536870912 bit	1.74 V	SELF CONTAINED REFRESH				.00005 Amp		15.18 mm
TC514260BTR-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		75 mA	262144 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40					Not Qualified	4194304 bit			e0			.001 Amp			100 ns
TC59S1604TR-12	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	42	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		4	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G42	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0					18.41 mm	72 ns
TC514256AZ-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	19	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		4	IN-LINE				1.27 mm	70 Cel			256KX4	256K	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T19	5.5 V	10.16 mm			Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					25.8 mm	70 ns
TC5164805AFTS-40	Toshiba	EDO DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		8388608 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0					20.95 mm	40 ns
TC514101AZ-80	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words				5		1	IN-LINE				1.27 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm			Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					25.8 mm	80 ns
TC51V17400CSJ-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		100 mA	4194304 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34		DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24					Not Qualified	16777216 bit			e0			.0005 Amp			60 ns
TC514260BFT-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		75 mA	262144 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40					Not Qualified	4194304 bit			e0			.001 Amp			100 ns
TC5116440BST-70	Toshiba	OTHER DRAM		20	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			4194304 words				5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm				4MX4	4M			DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		7.7 mm	Not Qualified	16777216 bit	4.5 V							17.14 mm	70 ns
THLY648051FG-80L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS	720 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel		3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-X144	3.6 V	25.4 mm	125 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.004 Amp			6 ns
THM361010AS-60	Toshiba	DRAM MODULE									1	CMOS				1048576 words						36									1MX36	1M				1						Not Qualified	37748736 bit									60 ns
THM368020SG-80	Toshiba	DRAM MODULE									1					8388608 words						36									8MX36	8M				1						Not Qualified	301989888 bit									80 ns
TC514800AZLL-80	Toshiba	FAST PAGE DRAM		28	ZIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE			524288 words				5		8	IN-LINE				1.27 mm				512KX8	512K			ZIG-ZAG	1	R-PZIP-T28	5.5 V	10.16 mm			Not Qualified	4194304 bit	4.5 V							36.2 mm	80 ns
THMY64N11A80L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel			8MX64	8M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH							6 ns
TC5164405AJ-60	Toshiba	EDO DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		16777216 words				3.3		4	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel		DUAL	1	R-PDSO-J32	3.6 V	3.7 mm		10.16 mm	Not Qualified	67108864 bit	3 V	CAS BEFORE RAS/HIDDEN REFRESH						20.96 mm	60 ns
TC514266BFT-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	TSOP1	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		4	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		6 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					14.4 mm	60 ns
THM91020AL-80	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30		512		PLASTIC/EPOXY		NO		CMOS			630 mA	1048576 words			COMMON	5	5	9		SIP30,.2		DRAMs	2.54 mm	70 Cel		3-STATE	1MX9	1M	0 Cel	Tin/Lead (Sn/Pb)	SINGLE				12.7 mm			Not Qualified	9437184 bit			e0			.009 Amp			80 ns
TC514800AJLL-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		524288 words		YES		5		8	SMALL OUTLINE				1.27 mm	70 Cel			512KX8	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.7 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH	e0					18.42 mm	70 ns
TC514256AP-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		4	IN-LINE				2.54 mm	70 Cel			256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.4 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					24.6 mm	80 ns
TC511000AP-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		1	IN-LINE				2.54 mm	70 Cel			1MX1	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	4.4 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					22 mm	80 ns
THM3251FOBSG70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		180 mA	524288 words			COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel		3-STATE	512KX32	512K	0 Cel		SINGLE		R-PSMA-N72					Not Qualified	16777216 bit						.001 Amp			70 ns
THM362040ASG-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words				5		36	MICROELECTRONIC ASSEMBLY		18			70 Cel			2MX36	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	75497472 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH							70 ns
TC5116400CSJ-50	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel		DUAL	1	R-PDSO-J24	5.5 V	3.7 mm		7.7 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.15 mm	50 ns
THMR2N16-8	Toshiba	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES	COMMON	2.5	2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40		DRAMs	1 mm			3-STATE	256MX16	256M			DUAL	1	R-XDMA-N184	2.63 V	34.93 mm	800 MHz	8 mm	Not Qualified	4294967296 bit	2.37 V	SELF CONTAINED REFRESH						133.35 mm	45 ns
THM361070ASG-60	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				5		36	MICROELECTRONIC ASSEMBLY					70 Cel			1MX36	1M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	37748736 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH							60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.