Toshiba DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
THM41000L-10	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	25		512		PLASTIC/EPOXY		NO		CMOS			240 mA	1048576 words			SEPARATE	5	5	4		SIP25,.2		DRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	SINGLE							Not Qualified	4194304 bit			e0						100 ns
TC511665BJL-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		65536 words				5		16	SMALL OUTLINE				1.27 mm	70 Cel		64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					26.04 mm	80 ns
TC51V18160AFT-80	Toshiba	OTHER DRAM		44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			1048576 words				3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm			1MX16	1M			DUAL	1	R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V							20.95 mm	80 ns
THM324000SG-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words				5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel		4MX32	4M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	134217728 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH							70 ns
THM72V1615BTG-5	Toshiba	EDO DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		16777216 words				3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		16MX72	16M	0 Cel		DUAL	1	R-XDMA-N168	3.47 V				Not Qualified	1207959552 bit	3.13 V								50 ns
TC524257P-12	Toshiba	PAGE MODE DRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		4	IN-LINE				2.54 mm	70 Cel		256KX4	256K	0 Cel	TIN LEAD	DUAL	2	R-PDIP-T28	5.5 V	4.45 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH	e0						120 ns
THM402500ASG-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		262144 words				5		40	MICROELECTRONIC ASSEMBLY					70 Cel		256KX40	256K	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	10485760 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							70 ns
TC514402AP-70	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		4	IN-LINE				2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.4 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					24.6 mm	70 ns
TC59S6404FTL-80	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	210 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	22.22 mm	6 ns
TC51V16405CSJ-60	Toshiba	EDO DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		80 mA	4194304 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24					Not Qualified	16777216 bit			e0			.0005 Amp			60 ns
TC524162SF-70	Toshiba	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST AND PIPELINED PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH				.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	3 mm		11.2 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					25 mm	70 ns
THM401000ASG-60	Toshiba	DRAM MODULE									1					1048576 words						40								1MX40	1M				1						Not Qualified	41943040 bit									60 ns
TC514440CFT-60	Toshiba	FAST PAGE DRAM		20	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			1048576 words				5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm			1MX4	1M			DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		7.7 mm	Not Qualified	4194304 bit	4.5 V							17.14 mm	60 ns
TC59S6416CFT-80	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	110 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	67108864 bit	3 V		e0			.001 Amp	1,2,4,8	22.22 mm	6 ns
TC5165405AJS-50	Toshiba	EDO DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		16777216 words		YES		3.3		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel		DUAL	1	R-PDSO-J32	3.6 V	3.7 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH						20.96 mm	50 ns
TC59LM913AMB-55	Toshiba	DDR1 DRAM	OTHER	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		32MX16	32M	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B64	2.65 V	1.2 mm		12.7 mm	Not Qualified	536870912 bit	2.35 V	AUTO/SELF REFRESH	e0					16.5 mm	.75 ns
TC511664J-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		65536 words				5		16	SMALL OUTLINE				1.27 mm	70 Cel		64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					26.04 mm	80 ns
TC59SM808BFTL-80	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	150 mA	33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	6 ns
TC514256AP-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		4	IN-LINE				2.54 mm	70 Cel		256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.4 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					24.6 mm	70 ns
TMM41464AZ-10	Toshiba	PAGE MODE DRAM	COMMERCIAL	20	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		80 mA	65536 words			COMMON	5	5	4	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20					Not Qualified	262144 bit			e0						100 ns
TC51V16800ANT-70	Toshiba	OTHER DRAM		28	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			2097152 words				3.3		8	SMALL OUTLINE, THIN PROFILE				1.27 mm			2MX8	2M			DUAL	1	R-PDSO-G28	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V							18.41 mm	70 ns
TC5116165CJ-60	Toshiba	EDO DRAM	COMMERCIAL	42	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words				5		16	SMALL OUTLINE				1.27 mm	70 Cel		1MX16	1M	0 Cel		DUAL	1	R-PDSO-J42	5.5 V	3.7 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						27.31 mm	60 ns
TC511000AJL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words				5		1	SMALL OUTLINE				1.27 mm	70 Cel		1MX1	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.55 mm		7.7 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					17.15 mm	100 ns
TC59S6432DFT-54	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	170 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20		DRAMs	.5 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G86	3.6 V	1.2 mm	185 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	5.4 ns
TC5164165BFTS-40	Toshiba	EDO DRAM	COMMERCIAL	50	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	4194304 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V		e0			.0002 Amp		20.95 mm	40 ns
TC514101ASJ-10	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words				5		1	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm		7.7 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					17.15 mm	100 ns
THLY64N11A80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	600 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V	25.4 mm	125 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.004 Amp			6 ns
TC59SM716FTL-10	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	150 mA	8388608 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	134217728 bit	3 V		e0			.001 Amp	1,2,4,8	22.22 mm	7 ns
TH8D362042UA-80LU	Toshiba	DRAM CARD	COMMERCIAL	88			UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	MOS	UNSPECIFIED	ASYNCHRONOUS		2097152 words				3.3		36	MICROELECTRONIC ASSEMBLY					55 Cel	3-STATE	2MX36	2M	0 Cel		UNSPECIFIED	1	X-XXMA-X88					Not Qualified	75497472 bit		RAS ONLY/CAS BEFORE RAS REFRESH; BYTE ACCESS; UNBUFFERED CONTROL LINES							80 ns
TC59LM818DMGI-37	Toshiba	DDR1 DRAM	INDUSTRIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS	BALL	SYNCHRONOUS	420 mA	16777216 words	2,4		COMMON	2.5	1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA60,6X15,40		DRAMs	1 mm	85 Cel	3-STATE	16MX18	16M	-40 Cel		BOTTOM	1	R-PBGA-B60	2.625 V	1.2 mm	266 MHz	9 mm	Not Qualified	301989888 bit	2.375 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED		2,4	16.5 mm	.65 ns
TC5118165BFT-60	Toshiba	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		180 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44					Not Qualified	16777216 bit			e0			.001 Amp			60 ns
THM73V1635BTG-5	Toshiba	EDO DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		16777216 words				3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		16MX72	16M	0 Cel		DUAL	1	R-XDMA-N168	3.47 V				Not Qualified	1207959552 bit	3.13 V								50 ns
TC59S6408FT-10	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	190 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	22.22 mm	8 ns
TC511001BP-60	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		1	IN-LINE				2.54 mm	70 Cel		1MX1	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	4.4 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					22 mm	60 ns
TC59SM808CFT-75	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	160 mA	33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	5.4 ns
THMY7280D1EG-80H	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		8MX72	8M	0 Cel		DUAL	1	R-XDMA-N168	3.45 V				Not Qualified	603979776 bit	3.15 V	AUTO/SELF REFRESH							6 ns
THLY641641FG-10	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	740 mA	67108864 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		ZIG-ZAG	1	R-XZMA-N144	3.6 V		100 MHz		Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH				.008 Amp			7 ns
THM361010ASG-60	Toshiba	DRAM MODULE									1	CMOS				1048576 words						36								1MX36	1M				1						Not Qualified	37748736 bit									60 ns
THM362060AS-80	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words				5		36	MICROELECTRONIC ASSEMBLY					70 Cel		2MX36	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	75497472 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH							80 ns
TC514100ATR-60	Toshiba	OTHER DRAM		20	TSOP2-R		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			4194304 words				5		1	SMALL OUTLINE, THIN PROFILE				1.27 mm			4MX1	4M			DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		7.7 mm	Not Qualified	4194304 bit	4.5 V							17.14 mm	60 ns
TC51V17800CSJS-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		2097152 words		YES		3.3		8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel		DUAL	1	R-PDSO-J28	3.6 V	3.7 mm		7.7 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH						18.42 mm	60 ns
THM73V1635ATG-5	Toshiba	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2340 mA	16777216 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	36	DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel		DUAL	1	R-XDMA-N168	3.47 V				Not Qualified	1207959552 bit	3.13 V	CAS BEFORE RAS/HIDDEN REFRESH				.009 Amp			50 ns
THLY6480H1FG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH							6 ns
TC59LM836DKG-33	Toshiba	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS	BALL	SYNCHRONOUS	800 mA	8388608 words	2,4	YES	COMMON	2.5	1.5/1.8,2.5	36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32		DRAMs	1 mm	85 Cel	3-STATE	8MX36	8M	0 Cel		BOTTOM	1	R-PBGA-B144	2.625 V	1.2 mm	300 MHz	11 mm	Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		2,4	18.5 mm	.5 ns
TC514273BFT-70	Toshiba	FAST PAGE DRAM		40	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			262144 words				5		16	SMALL OUTLINE, THIN PROFILE				.8 mm			256KX16	256K			DUAL	1	R-PDSO-G40	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V							18.41 mm	70 ns
TH81070AS-80	Toshiba	DRAM MODULE									1	CMOS				1048576 words						8								1MX8	1M				1						Not Qualified	8388608 bit									80 ns
THM321000S-10	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	MOS	NO LEAD	ASYNCHRONOUS		1048576 words				5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	1MX32	1M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							100 ns
TMM411000C-12	Toshiba	PAGE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE			1048576 words			SEPARATE	5	5	1	IN-LINE	DIP18,.3		DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	1048576 bit			e0						120 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.