Toshiba DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
THM81000AL-80	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		8	MICROELECTRONIC ASSEMBLY				70 Cel		1MX8	1M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30	5.5 V				Not Qualified	8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				80 ns
TC511000AJL-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words				5		1	SMALL OUTLINE			1.27 mm	70 Cel		1MX1	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.55 mm		7.7 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			17.15 mm	70 ns
THMY51E10C80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2973 mA	67108864 words		YES	COMMON	3.3	3.3	4	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	64MX4	64M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V	43.18 mm	125 MHz	4 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH; WD-MAX		.049 Amp		133.35 mm	6 ns
THM94000AL-60	Toshiba	DRAM MODULE									1					4194304 words						9							4MX9	4M				1						Not Qualified	37748736 bit							60 ns
TC5117400CSJ-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel		DUAL	1	R-PDSO-J24	5.5 V	3.7 mm		7.7 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				17.15 mm	60 ns
THM73V1635BTG-4	Toshiba	EDO DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		16777216 words				3.3		72	MICROELECTRONIC ASSEMBLY				70 Cel		16MX72	16M	0 Cel		DUAL	1	R-XDMA-N168	3.47 V				Not Qualified	1207959552 bit	3.13 V						40 ns
TC5164405BFT-50	Toshiba	EDO DRAM	COMMERCIAL	32	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V		e0	.0005 Amp		20.95 mm	50 ns
THMY6432G1EG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS	2880 mA	33554432 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-X168	3.6 V		125 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH		.016 Amp			6 ns
TC51V16405CSTS-60	Toshiba	EDO DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words		YES		3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel		DUAL	1	R-PDSO-G24	3.6 V	1.2 mm		7.7 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH				17.14 mm	60 ns
TC511000Z-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		60 mA	1048576 words			SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20					Not Qualified	1048576 bit			e0	.001 Amp			100 ns
THMY25E10A80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2973 mA	33554432 words		YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V		125 MHz		Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH		.049 Amp			6 ns
THM8512L-10	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30		512		PLASTIC/EPOXY		NO		CMOS			134 mA	524288 words			COMMON	5	5	8		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	SINGLE							Not Qualified	4194304 bit			e0	.004 Amp			100 ns
TC514100AFTL-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		7.7 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	e0			17.14 mm	80 ns
THMD51E20B75	Toshiba	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N184	2.7 V		133 MHz		Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH					.75 ns
TC5165405AFTS-50	Toshiba	EDO DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words		YES		3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel		DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH				20.95 mm	50 ns
THMY728030BEG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	8MX72	8M	0 Cel		DUAL	1	R-XDMA-N168	3.45 V		125 MHz		Not Qualified	603979776 bit	3.15 V	AUTO/SELF REFRESH					6.5 ns
TC51V16105BSJ-70	Toshiba	OTHER DRAM		26	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND			4194304 words				3.3		4	SMALL OUTLINE						4MX4	4M			DUAL	1	R-PDSO-J26	3.6 V				Not Qualified	16777216 bit	3 V						70 ns
TC514100APL-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words				5		1	IN-LINE			2.54 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	4.4 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			22 mm	70 ns
THM401040SG-80	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	MOS	NO LEAD	ASYNCHRONOUS		1048576 words				5		40	MICROELECTRONIC ASSEMBLY				70 Cel	3-STATE	1MX40	1M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	41943040 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					80 ns
THM82500AS-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		262144 words				5		8	MICROELECTRONIC ASSEMBLY				70 Cel		256KX8	256K	0 Cel		SINGLE	1	R-XSMA-N30	5.5 V				Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					70 ns
THL64V8015BTG-5S	Toshiba	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	800 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144	3.47 V				Not Qualified	536870912 bit	3.13 V			.0016 Amp			50 ns
TC59RM816MB-8	Toshiba	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	16MX16	16M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B92	2.63 V	1.2 mm	800 MHz	9.057 mm	Not Qualified	268435456 bit	2.37 V	SELF CONTAINED REFRESH	e0			17.349 mm	45 ns
TC514265DFTS-60	Toshiba	EDO DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	262144 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40					Not Qualified	4194304 bit			e0	.0002 Amp			60 ns
TC5117400TR-70	Toshiba	OTHER DRAM		24	TSOP2-R		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			4194304 words				5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm			4MX4	4M			DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V					18.41 mm	70 ns
TC514260BZ-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		75 mA	262144 words		NO	COMMON	5	5	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T40					Not Qualified	4194304 bit			e0	.001 Amp			100 ns
TC514266BP-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		4	IN-LINE			2.54 mm	70 Cel		256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.4 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			24.6 mm	60 ns
THM322500BSG-60	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		524288 words				5		16	MICROELECTRONIC ASSEMBLY				70 Cel		512KX16	512K	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					60 ns
TMM41256C-15	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE			262144 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16					Not Qualified	262144 bit			e0				150 ns
TC5116100J-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		16777216 words				5		1	SMALL OUTLINE			1.27 mm	70 Cel		16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J24	5.5 V	3.75 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			18.42 mm	60 ns
TC514400AFT-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words				5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		7.7 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			17.14 mm	60 ns
TC51V16160AJ-70	Toshiba	OTHER DRAM		42	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND			1048576 words				3.3		16	SMALL OUTLINE			1.27 mm			1MX16	1M			DUAL	1	R-PDSO-J42	3.6 V	3.7 mm		10.16 mm	Not Qualified	16777216 bit	3 V					27.31 mm	70 ns
TC524162SF-60	Toshiba	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST AND PIPELINED PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	3 mm		11.2 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			25 mm	60 ns
TC51V16165CJ-60	Toshiba	EDO DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words				3.3		16	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel		DUAL	1	R-PDSO-J42	3.6 V	3.7 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				27.31 mm	60 ns
TC524265FT-70	Toshiba	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST EDO AND PIPELINED PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			23.45 mm	70 ns
TC59YM916BKG24A	Toshiba	RAMBUS DRAM		100	TFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,50/32	DRAMs	.8 mm		3-STATE	32MX16	32M			BOTTOM	1	R-PBGA-B100	1.86 V	1.2 mm		14.56 mm	Not Qualified	536870912 bit	1.74 V	SELF CONTAINED REFRESH				15.18 mm
TC514258AZ-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	19	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		4	IN-LINE			1.27 mm	70 Cel		256KX4	256K	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T19	5.5 V	10.16 mm			Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			25.8 mm	100 ns
TMHY644041AEG-10	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1320 mA	4194304 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel		DUAL		R-PDMA-N168		27.94 mm	100 MHz		Not Qualified	268435456 bit				.032 Amp			8.5 ns
TC59S6416BFT-10	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	110 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	7 ns
THMR1E8E-6	Toshiba	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	64MX18	64M			DUAL	1	R-XDMA-N184	2.63 V	31.75 mm	600 MHz	4.8 mm	Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH; WD-MAX				133.35 mm	53 ns
THMY51N01C70	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH					5.4 ns
TC514402AZ-80	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		4	IN-LINE			1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm			Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			25.8 mm	80 ns
TC5165805BFTS-50	Toshiba	EDO DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	8388608 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V		e0	.0002 Amp		20.95 mm	50 ns
TC514100AZL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words				5		1	IN-LINE			1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm			Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			25.8 mm	100 ns
TC514410AZ-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		4	IN-LINE			1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm			Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			25.8 mm	70 ns
THM84020AL-80	Toshiba	DRAM MODULE									1					4194304 words						8							4MX8	4M				1						Not Qualified	33554432 bit							80 ns
TC5165805AFTS-50	Toshiba	EDO DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		8388608 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			20.95 mm	50 ns
TC59WM703FT-70	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		4	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		32MX4	32M	0 Cel		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH				22.22 mm	.75 ns
TC514258AJ-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words				5		4	SMALL OUTLINE			1.27 mm	70 Cel		256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.55 mm		7.7 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			17.15 mm	100 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.