Toshiba DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
TC51V4400AFT-80	Toshiba	OTHER DRAM		20	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			1048576 words				3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm			1MX4	1M			DUAL	1	R-PDSO-G20	3.6 V	1.2 mm		7.7 mm	Not Qualified	4194304 bit	3 V					17.14 mm	80 ns
TC51V16100BST-60	Toshiba	OTHER DRAM		20	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			16777216 words				3.3		1	SMALL OUTLINE, THIN PROFILE			1.27 mm			16MX1	16M			DUAL	1	R-PDSO-G20	3.6 V	1.2 mm		7.7 mm	Not Qualified	16777216 bit	3 V					17.14 mm	60 ns
THM91000L-12	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		540 mA	1048576 words			COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	0 Cel		SINGLE		R-PSMA-N30		22.86 mm			Not Qualified	9437184 bit				.009 Amp			120 ns
THLY12N11C70	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	680 mA	16777216 words		YES	COMMON	3.3	3.3	16	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	1.27 mm	70 Cel	3-STATE	16MX16	16M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V	25.53 mm	142 MHz	2.8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH; WD-MAX		.004 Amp		133.35 mm	5.4 ns
THMR2N4Z-8	Toshiba	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES	COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	64MX16	64M			DUAL	1	R-XDMA-N184	2.63 V	34.93 mm	800 MHz	4.8 mm	Not Qualified	1073741824 bit	2.37 V	SELF CONTAINED REFRESH				133.35 mm	45 ns
THLY64N11A75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	640 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V	25.4 mm	133 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH		.004 Amp			5.4 ns
TC511000BTR-70	Toshiba	FAST PAGE DRAM		20	TSOP1-R		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			1048576 words				5		1	SMALL OUTLINE, THIN PROFILE			.5 mm			1MX1	1M			DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		6 mm	Not Qualified	1048576 bit	4.5 V					14.4 mm	70 ns
TC514102AZ-60	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words				5		1	IN-LINE			1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm			Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			25.8 mm	60 ns
TC514102Z-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words				5		1	IN-LINE			1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm			Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			25.8 mm	100 ns
TC5117405BST	Toshiba	EDO DRAM MODULE							FAST PAGE WITH EDO		1	CMOS		ASYNCHRONOUS		4194304 words						4							4MX4	4M				1						Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					60 ns
THM325120AS-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				5		16	MICROELECTRONIC ASSEMBLY				70 Cel		1MX16	1M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					70 ns
TC514190BZ-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		55 mA	262144 words		NO	COMMON	5	5	18	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T40					Not Qualified	4718592 bit			e0	.001 Amp			100 ns
THM322080AS-70	Toshiba	DRAM MODULE									1	CMOS				2097152 words						32							2MX32	2M				1						Not Qualified	67108864 bit							70 ns
TC5165165BFTS-40	Toshiba	EDO DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	4194304 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V		e0	.0002 Amp		20.95 mm	40 ns
TC59RM718RB-6	Toshiba	RAMBUS DRAM		62	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX18	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1.2 mm	600 MHz	11.66 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			12.92 mm
TC511002AZ-70	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	19	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		1	IN-LINE			1.27 mm	70 Cel		1MX1	1M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T19	5.5 V	10.16 mm			Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			25.8 mm	70 ns
TC59S6432CFTL-70	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	145 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20	DRAMs	.5 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G86	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	5.4 ns
TC59SM908AFTL-75	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX8	64M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	5.4 ns
THM84000CS-50	Toshiba	DRAM MODULE									1	CMOS				4194304 words						8							4MX8	4M				1						Not Qualified	33554432 bit							50 ns
THM91020AL-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30		512		PLASTIC/EPOXY		NO		CMOS			720 mA	1048576 words			COMMON	5	5	9		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	0 Cel	Tin/Lead (Sn/Pb)	SINGLE				12.7 mm			Not Qualified	9437184 bit			e0	.009 Amp			70 ns
THMY51E0SA70	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		3.3		4	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		64MX4	64M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V	43.18 mm		6.35 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH; WD-MAX				133.35 mm	5.4 ns
TC59S6417BFT-65	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			153 MHz		Not Qualified	67108864 bit			e0	.002 Amp	1,2,4,8		4.5 ns
TC51V16100BSJ-60	Toshiba	OTHER DRAM		26	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND			16777216 words				3.3		1	SMALL OUTLINE						16MX1	16M			DUAL	1	R-PDSO-J26	3.6 V				Not Qualified	16777216 bit	3 V						60 ns
TC5118180BJ-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	42	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words				5		18	SMALL OUTLINE			1.27 mm	70 Cel		1MX18	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J42	5.5 V	3.7 mm		10.16 mm	Not Qualified	18874368 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			27.31 mm	60 ns
THMR1E16-6	Toshiba	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words				2.5		18	MICROELECTRONIC ASSEMBLY						128MX18	128M			DUAL	1	R-XDMA-N184	2.63 V				Not Qualified	2415919104 bit	2.37 V
TC51V18165CFTS-60	Toshiba	EDO DRAM	COMMERCIAL	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel		DUAL	1	R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH				20.95 mm	60 ns
TC51V17900AJ-80	Toshiba	OTHER DRAM		32	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND			2097152 words				3.3		9	SMALL OUTLINE			1.27 mm			2MX9	2M			DUAL	1	R-PDSO-J32	3.6 V	3.6 mm		10.2 mm	Not Qualified	18874368 bit	3 V					21 mm	80 ns
TC59S6408CFTL-10	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	95 mA	8388608 words	1,2,4,8,FP		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	67108864 bit	3 V		e0	.001 Amp	1,2,4,8	22.22 mm	7 ns
TC514100AZL-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words				5		1	IN-LINE			1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm			Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			25.8 mm	70 ns
THLY724031BFG-10L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	550 mA	4194304 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX72	4M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V		100 MHz		Not Qualified	301989888 bit	3 V			.005 Amp			7 ns
TC514410AP-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		4	IN-LINE			2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.4 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			24.6 mm	60 ns
TC514400AJ-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words				5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm		8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			17.15 mm	70 ns
TC511664ZL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		16	IN-LINE			1.27 mm	70 Cel		64KX16	64K	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.07 mm			Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			51.2 mm	100 ns
TC5116100TR-60	Toshiba	FAST PAGE DRAM		24	TSOP2-R		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			16777216 words				5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm			16MX1	16M			DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V					18.41 mm	60 ns
TC5164805AFT-50	Toshiba	EDO DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		8388608 words				3.3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	CAS BEFORE RAS/HIDDEN REFRESH	e0			20.95 mm	50 ns
TC5116100BTR-70	Toshiba	FAST PAGE DRAM		24	TSOP2-R		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			16777216 words				5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm			16MX1	16M			DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V					18.41 mm	70 ns
TC5118325BFT-70	Toshiba	EDO DRAM	COMMERCIAL	70	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		524288 words				5		32	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G70	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			23.49 mm	70 ns
TC5116400BSR-70	Toshiba	OTHER DRAM		26	SOP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING			4194304 words				5		4	SMALL OUTLINE						4MX4	4M			DUAL	1	R-PDSO-G26	5.5 V				Not Qualified	16777216 bit	4.5 V						70 ns
TC59LM814BFT-24	Toshiba	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	165 mA	16777216 words	2,4	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0	.002 Amp	2,4	22.22 mm	.9 ns
TC524257J-10	Toshiba	PAGE MODE DRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words				5		4	SMALL OUTLINE			1.27 mm	70 Cel		256KX4	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-J32	5.5 V	3.6 mm		10.2 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH	e0			21 mm	100 ns
TC514400AZ-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		4	IN-LINE			1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm			Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			25.8 mm	80 ns
TC59SM708AFTL	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		8	SMALL OUTLINE			.8 mm	70 Cel		16MX8	16M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH				22.22 mm
TC511000J-10	Toshiba																															TIN LEAD												e0
TC59S6404CFTL-75	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	120 mA	16777216 words	1,2,4,8,FP		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	67108864 bit	3 V		e0	.001 Amp	1,2,4,8	22.22 mm	5.4 ns
TC5117400BSR-60	Toshiba	FAST PAGE DRAM							FAST PAGE		1	CMOS		ASYNCHRONOUS		4194304 words						4							4MX4	4M				1						Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					60 ns
THLY6480H1FG-80,-80L	Toshiba
TC5118325BJ-60	Toshiba	EDO DRAM	COMMERCIAL	70	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		524288 words				5		32	SMALL OUTLINE			.8 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J70	5.5 V	3.7 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			28.57 mm	60 ns
TC5165805AJS-50	Toshiba	EDO DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		8388608 words		YES		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32	3.6 V	3.7 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			20.96 mm	50 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.