EEPROM EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
93LC56BT-E/ST	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5	YES	3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	200	.65 mm	125 Cel	NO	TOTEM POLE	128X16	128	-40 Cel		Matte Tin (Sn)		YES	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	6 ms	MICROWIRE	2048 bit	2.5 V			e3	40	260	.000005 Amp	4.4 mm
93LC56BT-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5	YES	3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	8	EEPROMs	200	.65 mm	85 Cel	NO	TOTEM POLE	128X16	128	-40 Cel		Matte Tin (Sn)		YES	DUAL	1	SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	6 ms	MICROWIRE	2048 bit	2.5 V			e3	40	260	.000001 Amp	3 mm
93LC66BT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		3	YES	3/5	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	85 Cel	NO	TOTEM POLE	256X16	256	-40 Cel		Matte Tin (Sn)		YES	DUAL	1	SOFTWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	3 MHz	1.63 mm	Not Qualified	6 ms	MICROWIRE	4096 bit	2.5 V			e3	40	260	.000001 Amp	2.95 mm
93LC86C-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words		3		3/5	16	SMALL OUTLINE	SOP8,.23	8	EEPROMs	200	1.27 mm	85 Cel			1KX16	1K	-40 Cel		MATTE TIN			DUAL	1		R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	16384 bit	2.5 V			e3	30	260	.0001 Amp	4.9 mm		5
AT24C01A-10PU-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words		3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel			128X8	128	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDIP-T8	1	5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	1024 bit	2.7 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3		260	.000004 Amp	9.271 mm
AT24C01B-PU	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words		5			8	IN-LINE					2.54 mm	85 Cel			128X8	128	-40 Cel					DUAL			R-PDIP-T8		5.5 V	5.334 mm		1 MHz	7.62 mm		5 ms	I2C	1024 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED		9.271 mm
AT24C256C-SSPD-T	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words		5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	100	1.27 mm	125 Cel		OPEN-DRAIN	32KX8	32K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V			e4			.000006 Amp	4.925 mm		5
AT24C64CY6-YH-T	Microchip Technology	EEPROM	INDUSTRIAL	8	HSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words		5			8	SMALL OUTLINE, HEAT SINK/SLUG	SOLCC8,.11,20			100	.5 mm	85 Cel			8KX8	8K	-40 Cel			1010DDDR		DUAL		HARDWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm		5 ms	I2C	65536 bit	1.8 V	IT ALSO OPERATES AT 0.4MHZ AT 1.8MIN SUPPLY	32				.000006 Amp	3 mm		5
AT24CS08-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words		5		1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V	1.7V TO 2.5V @ 0.4MHz		e3			.000006 Amp	2.9 mm		5
AT24MAC602-MAHM-E	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		2048 words		2.5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel			2KX8	2K	-40 Cel					DUAL			R-PDSO-N8		5.5 V	.6 mm		1 MHz	2 mm		5 ms	I2C	16384 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		3 mm
AT24MAC602-XHM-B	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			100	.65 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		5 ms	I2C	2048 bit	1.7 V			e4			.000006 Amp	4.4 mm		2.5
AT24MAC602-XHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		2.5		1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e4	40	260	.000006 Amp	4.4 mm		2.5
AT25010B-SSHL-T-899	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	128 words		5			8	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	NO	3-STATE	128X8	128	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm		5 ms	SPI	1024 bit	1.8 V						.0000005 Amp	4.925 mm		1.8
AT25256B-MAHL-E	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	32768 words		5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			100	.5 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	20 MHz	2 mm		5 ms	SPI	262144 bit	4.5 V	ALSO OPERATES AT 2.5V TO 5.5V @10MHZ AND 1.8V TO 5.5V @5MHZ		e4	40	260	.000005 Amp	3 mm		5
AT25512-TH-T-899	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words		5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			100	.65 mm	85 Cel		3-STATE	64KX8	64K	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	20 MHz	3 mm		5 ms	SPI	524288 bit	4.5 V	ALSO OPERATES AT 2.7V TO 5.5V @10MHZ AND 1.8V TO 5.5V @5MHZ					.000005 Amp	4.4 mm		5
AT25640AN-10SU-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words		5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			8KX8	8K	-40 Cel		Matte Tin (Sn)			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	2	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	65536 bit	2.7 V			e3	40	260	.000002 Amp	4.9 mm
AT25M01-SHM-B	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words		5		1.8/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	100	1.27 mm	85 Cel		3-STATE	128KX8	128K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	2.16 mm	1000000 Write/Erase Cycles	20 MHz	5.24 mm	Not Qualified	5 ms	SPI	1048576 bit	4.5 V	ALSO OPERATES AT 2.5V TO 5.5V @10MHZ AND 1.7V TO 5.5V @5MHZ		e4			.000005 Amp	5.29 mm		5
AT28C010E-12JU-235	Microchip Technology	EEPROM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5			8	SMALL OUTLINE					1.27 mm	85 Cel			128KX8	128K	-40 Cel					DUAL			R-PDSO-G32		5.5 V	3.556 mm			11.43 mm		10 ms		1048576 bit	4.5 V							13.97 mm	120 ns	5
AT28C256-25PI	Atmel	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD			DUAL			R-PDIP-T28		5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0002 Amp	37.0205 mm	250 ns	5	YES
AT28C256E-15FM/883	Microchip Technology	EEPROM	MILITARY	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	FLAT	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	YES	5	8	FLATPACK	FL28,.4		EEPROMs	10	1.27 mm	125 Cel			32KX8	32K	-55 Cel	NO	TIN LEAD			DUAL	1		R-CDFP-F28	1	5.5 V	3.02 mm	100000 Write/Erase Cycles		10.16 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	18.285 mm	150 ns	5	YES
AT28C256E-20PI	Atmel	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD			DUAL			R-PDIP-T28	1	5.5 V	4.826 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0002 Amp	37.0205 mm	200 ns	5	YES
AT28C64-15SC	Microchip Technology	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	NO	5	8	SMALL OUTLINE	SOP28,.4		EEPROMs	10	1.27 mm	70 Cel		3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		YES	DUAL			R-PDSO-G28	2	5.5 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	1 ms		65536 bit	4.5 V	10K OR 100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; SELF-TIMED BYTE WRITE CYCLE		e0		240	.0001 Amp	17.9 mm	150 ns	5	YES
AT28HC256E-12PI	Atmel	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD			DUAL			R-PDIP-T28	1	5.5 V	4.826 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	37.0205 mm	120 ns	5	YES
AT34C02D-MAHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words		5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			100	.5 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm		5 ms	I2C	2048 bit	3.6 V	1.7V TO 3.6V @ 0.1MHz AND 1.7V TO 3.6V @ 0.4MHz		e4	40	260	.000006 Amp	3 mm		5
AT93C46DY6-YH-T	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	64 words	SEPARATE	5		2/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.12,20	8	EEPROMs	100	.5 mm	85 Cel	NO	3-STATE	64X16	64	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	2 MHz	2 mm	Not Qualified	5 ms	3-WIRE	1024 bit	4.5 V	ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN		e4	40	260	.000015 Amp	3 mm		5
BR24L02FVT-WE2	ROHM	EEPROM	INDUSTRIAL	8	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		2.5		2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel			256X8	256	-40 Cel		TIN COPPER	1010DDDR		DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.25 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e2			.000002 Amp	4.4 mm
BR24T256-W	ROHM	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2.5 mA	32768 words				1.8/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDIP-T8	1	5.5 V	4.21 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	262144 bit	1.6 V	SEATED HT-CALCULATED		e3			.000002 Amp	9.3 mm
BR24T256-WZ	ROHM	EEPROM																																																I2C						NOT SPECIFIED	NOT SPECIFIED
BR25H640NUX-5ACTR	ROHM	EEPROM																																																SPI						NOT SPECIFIED	NOT SPECIFIED
BR93L46RFJ-WE2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	64 words		2.5		2/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			64X16	64	-40 Cel					DUAL		SOFTWARE	R-PDSO-G8		5.5 V		1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.9 mm
CAT24C02HU4IGT3A	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words		3.3		1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	100	.5 mm	85 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e4			.000001 Amp	3 mm
CAT24C64C4CTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2 mA	8192 words		1.8		1.8/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16		EEPROMs	100	.4 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		Tin/Silver (Sn/Ag)	1010000R		BOTTOM		HARDWARE	S-PBGA-B4	1	5.5 V	.35 mm	1000000 Write/Erase Cycles	.4 MHz	.76 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V			e2	30	260	.000003 Amp	.76 mm
CAT25160YE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words		5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	125 Cel			2KX8	2K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	16384 bit	1.8 V	100 YEAR DATA RETENTION		e4	30	260	.000002 Amp	4.4 mm
CAT25M01XI-T2	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words		5			8	SMALL OUTLINE					1.27 mm	85 Cel			128KX8	128K	-40 Cel		Matte Tin (Sn) - annealed			DUAL			R-PDSO-G8	3	5.5 V	2.03 mm		5 MHz	5.23 mm		5 ms	SPI	1048576 bit	1.8 V			e3	40	260		5.255 mm
CAT28C256L15	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs	100	2.54 mm	70 Cel			32KX8	32K	0 Cel	NO	TIN			DUAL			R-PDIP-T28		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e3			.00015 Amp	36.695 mm	150 ns	5	YES
CAT28C256L-15	Catalyst Semiconductor	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel			32KX8	32K	0 Cel	NO	MATTE TIN			DUAL			R-PDIP-T28		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e3			.00015 Amp	36.695 mm	150 ns	5	YES
CAT28C64BH13-12	Rochester Electronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words		5			8	SMALL OUTLINE, THIN PROFILE					.55 mm	70 Cel			8KX8	8K	0 Cel		MATTE TIN			DUAL			R-PDSO-G28		5.5 V	1.2 mm			8 mm	Not Qualified	5 ms		65536 bit	4.5 V			e3				11.8 mm	120 ns	5
CAT28C64BH13-90	Rochester Electronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words		5			8	SMALL OUTLINE, THIN PROFILE					.55 mm	70 Cel			8KX8	8K	0 Cel					DUAL			R-PDSO-G28		5.5 V	1.2 mm			8 mm	Not Qualified	5 ms		65536 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED		11.8 mm	90 ns	5
CAT28C64BH1312	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	70 Cel			8KX8	8K	0 Cel	NO	Matte Tin (Sn)			DUAL			R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		65536 bit	4.5 V		32	e3			.0001 Amp	11.8 mm	120 ns	5	YES
CAT28C64BH1390	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	70 Cel			8KX8	8K	0 Cel	NO	Matte Tin (Sn)			DUAL			R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		65536 bit	4.5 V		32	e3			.0001 Amp	11.8 mm	90 ns	5	YES
CAT64LC10J	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	64 words		5		3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	70 Cel			64X16	64	0 Cel		TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	1024 bit	2.5 V	SPI BUS INTERFACE		e0			.000003 Amp	4.9 mm
CAT64LC20S	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		5		3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	70 Cel			128X16	128	0 Cel		TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	2048 bit	2.5 V	SPI BUS INTERFACE		e0			.000003 Amp	4.9 mm
CAT64LC40J	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	256 words				3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	70 Cel			256X16	256	0 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		SPI	4096 bit							.000003 Amp
CAT64LC40LI-G	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words		3.3			16	IN-LINE					2.54 mm	85 Cel			256X16	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDIP-T8		6 V	5.33 mm			7.62 mm			SPI	4096 bit	2.5 V			e4				9.27 mm
CAT64LC40VI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32768 words		3.3			8	SMALL OUTLINE					1.27 mm	85 Cel			32KX8	32K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8	1	6 V	1.75 mm			3.9 mm	Not Qualified		SPI	262144 bit	2.5 V			e4	30	260		4.9 mm
FM24C04ULEMT8	Fairchild Semiconductor	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	512 words		3		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel			512X8	512	-40 Cel		Tin/Lead (Sn/Pb)	1010DDMR		DUAL			R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	15 ms	I2C	4096 bit	2.7 V			e0			.00001 Amp	4.4 mm
M24128-BWDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	16384 words		5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			16KX8	16K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V			e4				4.4 mm
M24256-DRMN8TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2 mA	32768 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	50	1.27 mm	105 Cel			32KX8	32K	-40 Cel			1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	900000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	4 ms	I2C	262144 bit	1.8 V						.000001 Amp	4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.