EEPROM EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
BR93H46RFVM-2CTR	ROHM	EEPROM	AUTOMOTIVE	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		3 mA	64 words		4		3/5	16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.16		EEPROMs	100	.65 mm	125 Cel			64X16	64	-40 Cel						DUAL		SOFTWARE	R-PDSO-G8		5.5 V	.9 mm	1000000 Write/Erase Cycles	2 MHz	2.8 mm	Not Qualified	4 ms	MICROWIRE	1024 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED		.00001 Amp	2.9 mm
BR93H56RFJ-2CE2	ROHM	EEPROM	AUTOMOTIVE	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		3 mA	128 words		4		3/5	16	SMALL OUTLINE, LOW PROFILE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel			128X16	128	-40 Cel						DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.65 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	4 ms	MICROWIRE	2048 bit	2.5 V	SEATED HT-CALCULATED			NOT SPECIFIED	NOT SPECIFIED		.00001 Amp	4.9 mm
BR93H86RF-WCE2	ROHM	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		1.5 mA	1024 words		4		2/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	125 Cel			1KX16	1K	-40 Cel						DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.71 mm	1000000 Write/Erase Cycles	1.25 MHz	4.4 mm	Not Qualified	10 ms	3-WIRE	16384 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED		.000002 Amp	5 mm
BR93LC46F-E2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			64 words		3			16	SMALL OUTLINE, LOW PROFILE					1.27 mm	85 Cel			64X16	64	-40 Cel						DUAL			R-PDSO-G8		5.5 V	1.6 mm		.2 MHz	4.4 mm	Not Qualified	25 ms	MICROWIRE	1024 bit	2.7 V								5 mm
BRCB016GWL-3UE2	ROHM	EEPROM
BRCB064GWZ-3E2	ROHM	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		3.9 mA	8192 words				1.8/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA6,2X3,16		EEPROMs	40	.4 mm	85 Cel			8KX8	8K	-40 Cel				1010D00R		BOTTOM		HARDWARE	R-PBGA-B6		5.5 V	.36 mm	1000000 Write/Erase Cycles	.4 MHz	1 mm	Not Qualified	5 ms	I2C	65536 bit	1.6 V				NOT SPECIFIED	NOT SPECIFIED		.000002 Amp	1.5 mm
BU9833GUL-WE2	ROHM	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		2 mA	256 words		2.5		1.8/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA6,2X3,20		EEPROMs	40	.5 mm	85 Cel			256X8	256	-40 Cel				1010D00R		BOTTOM		HARDWARE	R-PBGA-B6		5.5 V	.55 mm	1000000 Write/Erase Cycles	.4 MHz	1.27 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		.000002 Amp	1.5 mm
CAT24C08YI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2 mA	8192 words		3.3		2/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			8KX1	8K	-40 Cel			NICKEL PALLADIUM GOLD	1010DMMR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V			e4	30	260		.000001 Amp	4.4 mm
CAT25040HU4I-GT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		2 mA	512 words		5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	100	.5 mm	85 Cel			512X8	512	-40 Cel			NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	20 MHz	2 mm	Not Qualified	5 ms	SPI	4096 bit	1.8 V			e4	30	260		.000002 Amp	3 mm
FM93C06EN	Fairchild Semiconductor	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		1 mA	16 words		5		5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel			16X16	16	-40 Cel			TIN LEAD			DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.08 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	256 bit	4.5 V			e0				.00005 Amp	9.817 mm
FM93CS56LN	Fairchild Semiconductor	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		1 mA	128 words		3.3		3/5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel			128X16	128	0 Cel			TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.08 mm	1000000 Write/Erase Cycles	.25 MHz	7.62 mm	Not Qualified	15 ms	MICROWIRE	2048 bit	2.7 V			e0				.00001 Amp	9.817 mm
FM93CS66LM8X	Fairchild Semiconductor	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1 mA	256 words		3.3		3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	70 Cel			256X16	256	0 Cel			TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.25 MHz	3.9 mm	Not Qualified	15 ms	MICROWIRE	4096 bit	2.7 V			e0				.00001 Amp	4.9 mm
NM24C02LM8	National Semiconductor	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1 mA	256 words		5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	70 Cel		OPEN-DRAIN	256X8	256	0 Cel			Tin/Lead (Sn/Pb)	1010DDDR		DUAL			R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.8 MHz	3.9 mm	Not Qualified	15 ms	I2C	2048 bit	2.7 V	2 WIRE I2C INTERFACE; 16 BYTE PAGE WRITE; AUTOMATIC WRITE; DATA RETENTION > 40 YEARS		e0				.00001 Amp	4.9 mm
NM24C04M8X	National Semiconductor	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			512 words		5			8	SMALL OUTLINE				40	1.27 mm	70 Cel		OPEN-DRAIN	512X8	512	0 Cel						DUAL			R-PDSO-G8		5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	4.5 V	16 BYTE PAGE WRITE; WRITE PROTECT; DATA RETENTION>40 YEARS							4.9 mm
NM93C66N	National Semiconductor	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		1 mA	256 words		5		5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel		3-STATE	256X16	256	0 Cel			Tin/Lead (Sn/Pb)			DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.08 mm	1000000 Write/Erase Cycles		7.62 mm	Not Qualified		MICROWIRE	4096 bit	4.5 V	MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; DATA RETENTION = 40 YEARS		e0				.00005 Amp	9.817 mm
NM93CS46N	National Semiconductor	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		1 mA	64 words		5		5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel		3-STATE	64X16	64	0 Cel			Tin/Lead (Sn/Pb)			DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.08 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	4.5 V	40 YEARS DATA RETENTION; MICROWIRE BUS INTERFACE		e0				.00005 Amp	9.817 mm
TC58256FT	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16K	30 mA	33554432 words		3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20		Flash Memories		.5 mm	70 Cel			32MX8	32M	0 Cel	2K	YES			YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			268435456 bit	3 V		512				NAND TYPE	.0001 Amp	18.4 mm	35 ns	3	NO
TC584000P	Toshiba	EEPROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			524288 words		5			8	IN-LINE					2.54 mm	70 Cel			512KX8	512K	0 Cel			TIN LEAD			DUAL			R-PDIP-T32		5.25 V	4.8 mm			15.24 mm	Not Qualified			4194304 bit	4.75 V	BULK ERASE; BLOCK ERASE		e0					42 mm	15000 ns	5
TC58DVM72A1FT00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS	16K	30 mA	16777216 words		3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel			16MX8	16M	0 Cel	1K	YES	Tin/Lead (Sn/Pb)		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			134217728 bit	2.7 V		512	e0			NAND TYPE	.00005 Amp	18.4 mm	45 ns	3	NO
TC9WMB1FK	Toshiba	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2 mA	128 words		2.3		2/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.12,20		EEPROMs	10	.5 mm	85 Cel			128X8	128	-40 Cel			TIN LEAD	1010XXXR		DUAL		HARDWARE	R-PDSO-G8		5.5 V	.8 mm	100000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	12 ms	I2C	1024 bit	1.8 V			e0				.000005 Amp	2.3 mm
TMM2764AD-15	Toshiba	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			8192 words	COMMON	5		5	8	IN-LINE	DIP28,.6		EPROMs		2.54 mm	70 Cel		3-STATE	8KX8	8K	0 Cel			Tin/Lead (Sn/Pb)			DUAL			R-PDIP-T28		5.25 V	5.2 mm			15.24 mm	Not Qualified			65536 bit	4.75 V	LG-MAX		e0					37.7 mm	150 ns	5
X28C010DMB-12	Renesas Electronics	EEPROM		32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	131072 words		5	YES		8	IN-LINE	DIP32,.6			100	2.54 mm	125 Cel	NO	3-STATE	128KX8	128K	-55 Cel						DUAL			R-CDIP-T32		5.5 V	5.92 mm	100000 Write/Erase Cycles		15.24 mm		10 ms		1048576 bit	4.5 V	LG_MAX	256					.0005 Amp	42.95 mm	120 ns	5	YES
X28HC256FI-90	Intersil	EEPROM	INDUSTRIAL	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		60 mA	32768 words		5	YES	5	8	FLATPACK	FL28,.4		EEPROMs	100	1.27 mm	85 Cel			32KX8	32K	-40 Cel		NO	TIN LEAD			DUAL			R-CDFP-F28		5.5 V	2.92 mm	1000000 Write/Erase Cycles		12.445 mm	Not Qualified	5 ms		262144 bit	4.5 V	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	128	e0				.0005 Amp		90 ns	5	YES
X28HC256JIZ-15	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS			32768 words		5			8	CHIP CARRIER					1.27 mm	85 Cel			32KX8	32K	-40 Cel			MATTE TIN			QUAD			R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm		5 ms		262144 bit	4.5 V			e3	30	260			13.97 mm	150 ns	5
X28HC256PI-12	Intersil	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		60 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs	100	2.54 mm	85 Cel			32KX8	32K	-40 Cel		NO	TIN LEAD			DUAL			R-PDIP-T28		5.5 V	6.35 mm	1000000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	128	e0				.0005 Amp	37.4 mm	120 ns	5	YES
X28HC64JIZ-90	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS			8192 words		5			8	CHIP CARRIER					1.27 mm	85 Cel			8KX8	8K	-40 Cel			MATTE TIN			QUAD			R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm		5 ms		65536 bit	4.5 V			e3	30	245			13.97 mm	90 ns	5
X28HC64PI-90	Intersil	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		40 mA	8192 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs	100	2.54 mm	85 Cel			8KX8	8K	-40 Cel		NO	TIN LEAD			DUAL			R-PDIP-T28		5.5 V	6.35 mm	1000000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	4.5 V	SOFTWARE DATA PROTECTION; 64 BYTE PAGE WRITE; 100 YEARS DATA RETENTION	64	e0				.0002 Amp	37.4 mm	90 ns	5	YES
X28HC64PIZ-12	Renesas Electronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			8192 words		5			8	IN-LINE					2.54 mm	85 Cel			8KX8	8K	-40 Cel			MATTE TIN			DUAL			R-PDIP-T28		5.5 V	6.35 mm			15.24 mm		5 ms		65536 bit	4.5 V			e3					37.4 mm	120 ns	5
X28HC64PZ-12	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			8192 words		5			8	IN-LINE					2.54 mm	70 Cel			8KX8	8K	0 Cel			MATTE TIN			DUAL			R-PDIP-T28		5.5 V	6.35 mm			15.24 mm		5 ms		65536 bit	4.5 V			e3					37.4 mm	120 ns	5
24AA256-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		3 mA	32768 words		2.5		1.8/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	125 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel			MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	1.7 V			e3	30	260		.000005 Amp	4.9 mm		2.5
24AA256T-I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		3 mA	32768 words		2.5		1.8/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	85 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel			MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	262144 bit	1.7 V			e3		260		.000005 Amp	5.26 mm		2.5
24LC01BT-E/LT	Microchip Technology	EEPROM	AUTOMOTIVE	5	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		3 mA	128 words		5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP5/6,.08		EEPROMs	200	.65 mm	125 Cel			128X8	128	-40 Cel			Matte Tin (Sn)	1010XXXR		DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	1.25 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V			e3		260		.000005 Amp	2 mm		5
24LC64-E/MS	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		3 mA	8192 words		4.5		3/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel			Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3	40	260		.000005 Amp	3 mm		4.5
25AA020AT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		5 mA	256 words		2.5		2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP6,.11,37		EEPROMs	200	.95 mm	85 Cel			256X8	256	-40 Cel			MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	10 MHz	1.55 mm	Not Qualified	5 ms	SPI	2048 bit	1.8 V			e3		260		.000001 Amp	2.9 mm		2.5
25AA080B-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		6 mA	1024 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel			1KX8	1K	-40 Cel			MATTE TIN			DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	8192 bit	1.8 V			e3	30	260		.000005 Amp	4.9 mm		2.5
25AA640A-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		5 mA	8192 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel			8KX8	8K	-40 Cel			Matte Tin (Sn)			DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	65536 bit	1.8 V			e3	40	260		.000001 Amp	3 mm		2.5
25LC320-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		5 mA	4096 words		5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel			4KX8	4K	-40 Cel			MATTE TIN			DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	SPI	32768 bit	2.5 V			e3	30	260		.000005 Amp	4.9 mm		5
25LC320A-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		5 mA	4096 words		5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel		3-STATE	4KX8	4K	-40 Cel			Matte Tin (Sn)			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	32768 bit	4.5 V	OPERATES WITH 2.5V MIN @ 5 MHZ		e3	40	260		.000005 Amp	4.4 mm		5
93LC56B-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		2 mA	128 words		5	YES	3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	200	1.27 mm	125 Cel	NO	TOTEM POLE	128X16	128	-40 Cel			MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	6 ms	MICROWIRE	2048 bit	2.5 V			e3	30	260		.000005 Amp	4.9 mm
AT24C04D-XHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1 mA	512 words		3		1.8/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel			NICKEL PALLADIUM GOLD	1010DDMR		DUAL	1	HARDWARE	R-PDSO-G8	1	3.6 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V	1.7V TO 3.6V @ 0.1MHz AND 1.7V TO 3.6V @ 0.4MHz	16	e4				.0000008 Amp	4.4 mm		3	YES
AT24CS32-SSHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	4096 words		5		1.8/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		OPEN-DRAIN	4KX8	4K	-40 Cel			NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.885 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V			e4				.000006 Amp	4.925 mm		5
AT24CSW010-UUM0B-T	Microchip Technology	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		1 mA	128 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16			100	.4 mm	85 Cel			128X8	128	-40 Cel			TIN SILVER COPPER	1010DDDR		BOTTOM	1	HARDWARE/SOFTWARE	R-PBGA-B4		3.6 V	.33 mm	1000000 Write/Erase Cycles	1 MHz			5 ms	I2C	1024 bit	1.7 V	1.7V TO 3.6V @ 0.1MHz AND 1.7V TO 3.6V @ 0.4MHz	8	e1				.0000008 Amp			1.8
AT25010B-MAHL-T	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		10 mA	128 words		5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	100	.5 mm	85 Cel			128X8	128	-40 Cel			NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	20 MHz	2 mm	Not Qualified	5 ms	SPI	1024 bit	4.5 V	2.5V TO 5.5V @ 10MHz AND 1.8V TO 5.5V @ 5MHz		e4	40	260		.0000035 Amp	3 mm		5
AT28C010-12DM/883	Microchip Technology	EEPROM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class C	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words		5			8	IN-LINE					2.54 mm	125 Cel			128KX8	128K	-55 Cel						DUAL			R-GDIP-T32		5.5 V	5.72 mm			15.24 mm		10 ms		1048576 bit	4.5 V								42.2 mm	120 ns	5
AT28C256-25FM/883	Microchip Technology	EEPROM	MILITARY	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class C	FLAT	PARALLEL	ASYNCHRONOUS		50 mA	32768 words		5	YES	5	8	FLATPACK	FL28,.4		EEPROMs		1.27 mm	125 Cel		3-STATE	32KX8	32K	-55 Cel		NO	TIN LEAD			DUAL			R-CDFP-F28	1	5.5 V	3.02 mm	10000 Write/Erase Cycles		10.16 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0				.0003 Amp	18.285 mm	250 ns	5	YES
AT28C256F-15FM/883	Microchip Technology	EEPROM	MILITARY	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	FLAT	PARALLEL	ASYNCHRONOUS		50 mA	32768 words		5	YES	5	8	FLATPACK	FL28,.4		EEPROMs	10	1.27 mm	125 Cel			32KX8	32K	-55 Cel		NO	TIN LEAD			DUAL	1		R-CDFP-F28	1	5.5 V	3.02 mm	10000 Write/Erase Cycles		10.16 mm	Not Qualified	3 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0				.0003 Amp	18.285 mm	150 ns	5	YES
24AA01-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		3 mA	128 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel			128X8	128	-40 Cel			Matte Tin (Sn)	1010XXXR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e3	40	260		.000001 Amp	3 mm		2.5
24AA01-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS		3 mA	128 words		2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel			128X8	128	-40 Cel			MATTE TIN	1010XXXR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e3				.000001 Amp	9.271 mm		2.5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.