EEPROM EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
BR24H256FVT-5ACE2	ROHM	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		32768 words				8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel		32KX8	32K	-40 Cel				DUAL		R-PDSO-G8		5.5 V	1.2 mm		1 MHz	3 mm		3.5 ms	I2C	262144 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		4.4 mm
BR24L02FJ-WE2	ROHM	EEPROM	INDUSTRIAL	8	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		256X8	256	-40 Cel		TIN COPPER	1010DDDR	DUAL	HARDWARE	R-PDSO-J8	1	5.5 V	1.775 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e2	10	260	.000002 Amp	4.9 mm
BR24S256F-WE2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	32768 words	2.5		1.8/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		32KX8	32K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.78 mm	1000000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	5 mm
BR24T02FJ-WE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5		1.8/5	8	SMALL OUTLINE, LOW PROFILE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		256X8	256	-40 Cel		MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.65 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.6 V			e3			.000002 Amp	4.9 mm
BR24T1MF-3AME2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		131072 words	2.5			8	SMALL OUTLINE				1.27 mm	85 Cel		128KX8	128K	-40 Cel				DUAL		R-PDSO-G8		5.5 V	1.71 mm		1 MHz	4.4 mm		5 ms	I2C	1048576 bit	1.7 V	SEATED HT-CALCULATED			NOT SPECIFIED	NOT SPECIFIED		5 mm
BR25A256FJ-3MGE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32768 words				8	SMALL OUTLINE, LOW PROFILE				1.27 mm	105 Cel		32KX8	32K	-40 Cel				DUAL		R-PDSO-G8		5.5 V	1.65 mm		5 MHz	3.9 mm		5 ms	SPI	262144 bit	2.5 V	SEATED HT-CALCULATED			NOT SPECIFIED	NOT SPECIFIED		4.9 mm
BR25A512FJ-3MGE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		65536 words				8	SMALL OUTLINE, LOW PROFILE				1.27 mm	105 Cel		64KX8	64K	-40 Cel				DUAL		R-PDSO-G8		5.5 V	1.65 mm		5 MHz	3.9 mm		5 ms	SPI	524288 bit	2.5 V	SEATED HT-CALCULATED			NOT SPECIFIED	NOT SPECIFIED		4.9 mm
BR25G256F-3GE2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	8 mA	32768 words	5			8	SMALL OUTLINE	SOP8,.25		100	1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel				DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.71 mm	1000000 Write/Erase Cycles	20 MHz	4.4 mm		5 ms	SPI	262144 bit	4.5 V	SEATED HT-CALCULATED;also operates with 10mhz @2.5V,5MHZ @1.7V,3MHZ@1.6V			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	5 mm		5
BR25G512FVT-3GE2	ROHM	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		65536 words				8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		64KX8	64K	-40 Cel				DUAL		R-PDSO-G8		5.5 V	1.2 mm		10 MHz	3 mm		5 ms	SPI	524288 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED		4.4 mm
BR25H160FVM-2CTR	ROHM	EEPROM	AUTOMOTIVE	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	4 mA	2048 words	5		3/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.16	EEPROMs	100	.65 mm	125 Cel		2KX8	2K	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	.9 mm	1000000 Write/Erase Cycles	10 MHz	2.8 mm	Not Qualified	4 ms	SPI	16384 bit	4.5 V	ALSO OPERATES AT 2.5V WITH 5MHZ			NOT SPECIFIED	NOT SPECIFIED	.00001 Amp	2.9 mm
BR9010	ROHM	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	64 words	3		3/5	16	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	85 Cel		64X16	64	-40 Cel		TIN COPPER		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		3.3 V	3.7 mm	100000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified		4-WIRE	1024 bit	2.7 V	OPERATES IN 5V/3V VCC, 100,000 ERASE/WRITE CYCLES, 10 YEARS DATA RETENTION		e2			.000003 Amp	9.3 mm
BRCF016GWZ-3E2	ROHM	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		2048 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel		2KX8	2K	-40 Cel				BOTTOM		R-PBGA-B4		5.5 V	.35 mm		1 MHz	.84 mm		5 ms	I2C	16384 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		.86 mm
NMC93C56EN	National Semiconductor	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	128 words	5		5	16	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	3-STATE	128X16	128	-40 Cel		TIN LEAD		DUAL	SOFTWARE	R-PDIP-T8		5.5 V	5.08 mm	100000 Write/Erase Cycles	.5 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V			e0			.00005 Amp	9.817 mm
TC58DVM72A1TG00	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS		16777216 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		16MX8	16M	-40 Cel				DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			134217728 bit	2.7 V							18.4 mm		3
5962-3826707MZA	Microchip Technology	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS	100 mA	131072 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	125 Cel		128KX8	128K	-55 Cel	NO			DUAL		R-XDFP-F32		5.5 V	3.048 mm	10000 Write/Erase Cycles		11.6586 mm	Not Qualified	10 ms		1048576 bit	4.5 V	AUTOMATIC WRITE	128	e0	NOT SPECIFIED	NOT SPECIFIED	.00085 Amp	20.85 mm	120 ns	5	YES
5962-8852505XA	Defense Logistics Agency	EEPROM	MILITARY	28	DIP		CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE					125 Cel		32KX8	32K	-55 Cel		TIN LEAD		DUAL				5.5 V					Not Qualified	10 ms		262144 bit	4.5 V			e0					250 ns	5
5962-8852505XX	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class C	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	125 Cel		32KX8	32K	-55 Cel				DUAL		R-GDIP-T28		5.5 V	5.72 mm			15.24 mm	Not Qualified			262144 bit	4.5 V							37.215 mm	250 ns	5
AT24C01A-10SA-2.7C	Atmel	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	3		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel		128X8	128	-40 Cel		TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1024 bit	2.7 V			e0			.000004 Amp	4.9 mm
AT24C01A-10SI-2.7	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	3		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel	OPEN-DRAIN	128X8	128	-40 Cel		Tin/Lead (Sn/Pb)	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1024 bit	2.7 V	DATA RETENTION = 100 YEARS		e0	30	240	.000004 Amp	4.9 mm
AT24C01BU3-UU-T	Microchip Technology	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		128 words	5			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		128X8	128	-40 Cel				BOTTOM		R-PBGA-B8		5.5 V	.91 mm		1 MHz	1.5 mm		5 ms	I2C	1024 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED		2 mm
AT24C02AN-10SI-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel		256X8	256	-40 Cel		TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e0			.000003 Amp	4.9 mm
AT24C02B-10PU-1.8	Atmel	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel		256X8	256	-40 Cel		MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDIP-T8	1	5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e3		260	.000003 Amp	9.271 mm
AT24C02B-10TU-1.8	Atmel	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel		256X8	256	-40 Cel		MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e3		260	.000003 Amp	4.4 mm
AT24C02N-10SU-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel		256X8	256	-40 Cel		MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3		260	.000003 Amp	4.9 mm
AT24C04-10PU-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	512 words	3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel		512X8	512	-40 Cel		MATTE TIN	1010DDMR	DUAL	HARDWARE	R-PDIP-T8	1	5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	4096 bit	2.7 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3		260	.000004 Amp	9.271 mm
AT24C04-10SC	Atmel	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	5		5	8	SMALL OUTLINE	SOP14,.25	EEPROMs	100	1.27 mm	70 Cel	OPEN-DRAIN	512X8	512	0 Cel		TIN LEAD	1010DDMR	DUAL	HARDWARE	R-PDSO-G14		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	4.5 V	2-WIRE SERIAL INTERFACE		e0			.000018 Amp	8.65 mm
AT24C04-10TU-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel		512X8	512	-40 Cel		MATTE TIN	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3		260	.000003 Amp	4.4 mm
AT24C04-10TU-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	3		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel		512X8	512	-40 Cel		MATTE TIN	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	2.7 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3		260	.000004 Amp	4.4 mm
AT24C04A-10TU-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel		512X8	512	-40 Cel		MATTE TIN	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3		260	.000003 Amp	4.4 mm
AT24C04A-10TU-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	3		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel		512X8	512	-40 Cel		MATTE TIN	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	2.7 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3		260	.000004 Amp	4.4 mm
AT24C04AN-10SI-2.7	Microchip Technology	EEPROM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	3			8	SMALL OUTLINE	SOP8,.25		100	1.27 mm	85 Cel		512X8	512	-40 Cel			1010DDXR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	4096 bit	2.7 V						.000018 Amp	4.9 mm		3
AT24C04AN-10SU-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel		512X8	512	-40 Cel		MATTE TIN	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V			e3		260	.000003 Amp	4.9 mm
AT24C04N-10SI-1.8	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel	OPEN-DRAIN	512X8	512	-40 Cel		Tin/Lead (Sn/Pb)	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V	DATA RETENTION = 100 YEARS		e0	30	240	.000003 Amp	4.9 mm
AT24C08A-10TU-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	3		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel		1KX8	1K	-40 Cel		Matte Tin (Sn)	1010DMMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	8192 bit	2.7 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3	40	260	.000004 Amp	4.4 mm
AT24C08AN-10SU-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel		1KX8	1K	-40 Cel		Matte Tin (Sn)	1010DMMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3	40	260	.000003 Amp	4.9 mm
AT24C08N-10SI	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	5		5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel	OPEN-DRAIN	1KX8	1K	-40 Cel		Tin/Lead (Sn/Pb)		DUAL		R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	8192 bit	4.5 V	2-WIRE SERIAL INTERFACE		e0	30	240	.000018 Amp	4.89 mm
AT24C1024-10PI-2.7	Atmel	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	131072 words	3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel		128KX8	128K	-40 Cel		TIN LEAD	10100DMR	DUAL	HARDWARE	R-PDIP-T8	1	5.5 V	5.334 mm	100000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	1048576 bit	2.7 V			e0			.000003 Amp	9.271 mm
AT24C128-10TU-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		40	.65 mm	85 Cel		16KX8	16K	-40 Cel			10100DDR	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		10 ms	I2C	131072 bit	4.5 V	ALSO OPERATES AT 0.4MHZ AT 2.7VMIN SUPPLY	64				.000006 Amp	4.4 mm		5
AT24C128BN-SH-B	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		16KX8	16K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V			e4	40	260	.000001 Amp	4.9 mm
AT24C128T1-10TI-2.7	Atmel	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	3		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		16KX8	16K	-40 Cel		TIN LEAD	10100DDR	DUAL	HARDWARE	R-PDSO-G14	2	5.5 V	1.2 mm	100000 Write/Erase Cycles	1 MHz	4.4 mm	Not Qualified	10 ms	I2C	131072 bit	2.7 V	HARDWARE & SOFTWARE DATA PROTECTION; DATA RETENTION 40 YEARS		e0		240	.0000005 Amp	5 mm
AT24C16-10PC-2.7	Atmel	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	2048 words	3.3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	OPEN-DRAIN	2KX8	2K	0 Cel		TIN LEAD	1010MMMR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V	2-WIRE SERIAL INTERFACE		e0			.000004 Amp	9.59 mm
AT24C16A-10TU-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel		2KX8	2K	-40 Cel		MATTE TIN	1010MMMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3		260	.000003 Amp	4.4 mm
AT24C16B-PU	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	2048 words	5			8	IN-LINE	DIP8,.3		100	2.54 mm	85 Cel		2KX8	2K	-40 Cel			1010MMMR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm		5 ms	I2C	16384 bit	1.8 V						.000006 Amp	9.271 mm		5
AT24C16N-10SI-2.7	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	3		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel		TIN LEAD	1010MMMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	2.7 V	DATA RETENTION = 100 YEARS		e0			.000004 Amp	4.9 mm
AT24C256B-10PU-1.8	Atmel	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	32768 words	2.5		2/3.3	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN	1010DDDR	DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	1	3.6 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V			e3			.000001 Amp	9.271 mm
AT24C256BN-SH-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		32KX8	32K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V			e4	40	260	.000001 Amp	4.9 mm
AT24C32CY6-YH-T	Microchip Technology	EEPROM	INDUSTRIAL	8	HSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	4096 words	5			8	SMALL OUTLINE, HEAT SINK/SLUG	SOLCC8,.11,20		100	.5 mm	85 Cel		4KX8	4K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm		5 ms	I2C	32768 bit	1.8 V	IT ALSO OPERATES AT 0.4MHZ AT 1.8MIN SUPPLY	32				.000006 Amp	3 mm		5
AT24C512-10TU-1.8	Atmel	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		65536 words	2.7		2/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	85 Cel		64KX8	64K	-40 Cel		MATTE TIN	10100DDR	DUAL	HARDWARE	R-PDSO-G8	1	3.6 V	1.2 mm	100000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	20 ms	I2C	524288 bit	1.8 V			e3		260	.000001 Amp	4.4 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.