EEPROM CARD EEPROM 1,057

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Parallel or Serial	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Endurance	Qualification	Serial Bus Type	Boot Block	Memory Density	Page Size (words)	JESD-609 Code	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8P2815UQC-GI4CT	Samsung	EEPROM CARD	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA80,8X12,32		Flash Memories		.8 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B80			Not Qualified		BOTTOM/TOP	134217728 bit	8	e1	260	NOR TYPE	.00003 Amp	YES	65 ns	2.7	YES
K8S1215EBC-SE1CT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1		Not Qualified		BOTTOM	536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
KFM1216Q2A-DEB6	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR		YES	CMOS	BALL	PARALLEL	64K	40 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	32MX16	32M	-30 Cel	512	YES	MATTE TIN		YES	BOTTOM		R-XBGA-B63	1		Not Qualified			536870912 bit	1K	e3		NAND TYPE	.00005 Amp		11.5 ns	2.7	NO
K8S1215ETC-DE1CT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1		Not Qualified		TOP	536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1315ETC-SE1FT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1		Not Qualified		TOP	536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
KFG1G16Q2B-DEB8T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	40 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	64MX16	64M	-30 Cel	1K	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B63	3		Not Qualified			1073741824 bit	1K	e1	260	NAND TYPE	.00005 Amp		70 ns	2.7	NO
K8P2716UZC-QC4CT	Samsung	EEPROM CARD	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	PARALLEL	128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	70 Cel	8MX16	8M	0 Cel	128	YES	MATTE TIN		YES	DUAL		R-PDSO-G56	1		Not Qualified			134217728 bit	8/16	e3	260	NOR TYPE	.00004 Amp	YES	65 ns	2.7	YES
K8S1115EBC-FC1ET	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES			YES	BOTTOM		R-PBGA-B64	1		Not Qualified		BOTTOM	536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
KFG1216Q2B-SEB6T	Samsung	EEPROM CARD	OTHER	67	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	40 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA67,8X10,32		Flash Memories		.8 mm	85 Cel	32MX16	32M	-30 Cel	512	YES			YES	BOTTOM		R-PBGA-B67	3		Not Qualified			536870912 bit	1K		260	NAND TYPE	.00005 Amp		11 ns	2.7	NO
K8P2815UQC-GE4CT	Samsung	EEPROM CARD	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA80,8X12,32		Flash Memories		.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B80	1		Not Qualified		BOTTOM/TOP	134217728 bit	8	e3	260	NOR TYPE	.00003 Amp	YES	65 ns	2.7	YES
KFG4GH6Q4M-DEB8T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	256K	35 mA	268435456 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	256MX16	256M	-30 Cel	1K	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B63	3		Not Qualified		INDEPENDENT	4294967296 bit	2K	e1	260	NAND TYPE	.00005 Amp		76 ns	2.7	NO
KFG1G16U2C-DIB6T	Samsung	EEPROM CARD	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	65 mA	67108864 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B63	1		Not Qualified			1073741824 bit	1K	e3		NAND TYPE	.00008 Amp		70 ns	2.7	NO
K8P2716UZC-QE4CT	Samsung	EEPROM CARD	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	PARALLEL	128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel	8MX16	8M	-25 Cel	128	YES	MATTE TIN		YES	DUAL		R-PDSO-G56	1		Not Qualified			134217728 bit	8/16	e3	260	NOR TYPE	.00004 Amp	YES	65 ns	2.7	YES
K8P5615UQA-FI4DT	Samsung	EEPROM CARD	INDUSTRIAL	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	32K,128K	50 mA	16777216 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel	16MX16	16M	-40 Cel	8,126	YES			YES	BOTTOM		R-PBGA-B84	3		Not Qualified		BOTTOM/TOP	268435456 bit			240	NOR TYPE	.00006 Amp	YES	70 ns	2.7	YES
K8S1315EBC-SE1ET	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1		Not Qualified		BOTTOM	536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1115EBC-SE1ET	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1		Not Qualified		BOTTOM	536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1215EBC-DC1CT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1		Not Qualified		BOTTOM	536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1015EBC-FC1DT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES			YES	BOTTOM		R-PBGA-B64	1		Not Qualified		BOTTOM	536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8P2716UZC-QC4DT	Samsung	EEPROM CARD	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	PARALLEL	128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	70 Cel	8MX16	8M	0 Cel	128	YES	MATTE TIN		YES	DUAL		R-PDSO-G56	1		Not Qualified			134217728 bit	8/16	e3	260	NOR TYPE	.00004 Amp	YES	70 ns	2.7	YES
K8P2716UZC-JI4ET	Samsung	EEPROM CARD	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	MATTE TIN		YES	BOTTOM		S-PBGA-B64	1		Not Qualified			134217728 bit	8/16	e3	260	NOR TYPE	.00004 Amp	YES	80 ns	2.7	YES
K8S1015ETC-FC1CT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES			YES	BOTTOM		R-PBGA-B64	1		Not Qualified		TOP	536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8P2815UQC-QE4DT	Samsung	EEPROM CARD	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	PARALLEL	4K,32K	55 mA	8388608 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	MATTE TIN		YES	DUAL		R-PDSO-G56	1		Not Qualified		BOTTOM/TOP	134217728 bit	8	e3	260	NOR TYPE	.00003 Amp	YES	70 ns	2.7	YES
K8S1215EZC-DE1CT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	512	YES	MATTE TIN			BOTTOM		R-PBGA-B64	1		Not Qualified			536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
KS24C01C	Samsung	EEPROM CARD	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	SERIAL		3 mA	128 words			3/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	70 Cel	128X8	128	-25 Cel			TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		1000000 Write/Erase Cycles	Not Qualified	I2C		1024 bit		e0			.000005 Amp			2.7
KFG1216Q2B-DEB8T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	40 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	32MX16	32M	-30 Cel	512	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B63	3		Not Qualified			536870912 bit	1K	e1	260	NAND TYPE	.00005 Amp		9 ns	2.7	NO
K8S1215EBC-FE1CT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES			YES	BOTTOM		R-PBGA-B64	1		Not Qualified		BOTTOM	536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1315ETC-FE1ET	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES			YES	BOTTOM		R-PBGA-B64	1		Not Qualified		TOP	536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1215EBC-DE1CT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1		Not Qualified		BOTTOM	536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1015EZC-SE1DT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	512	YES	MATTE TIN			BOTTOM		R-PBGA-B64	1		Not Qualified			536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1215EBC-SC1DT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1		Not Qualified		BOTTOM	536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
KS24C01I	Samsung	EEPROM CARD	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	SERIAL		3 mA	128 words			3/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel	128X8	128	-40 Cel			TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		1000000 Write/Erase Cycles	Not Qualified	I2C		1024 bit		e0			.000005 Amp			2.7
K8P2815UQC-GE4DT	Samsung	EEPROM CARD	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA80,8X12,32		Flash Memories		.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B80	1		Not Qualified		BOTTOM/TOP	134217728 bit	8	e3	260	NOR TYPE	.00003 Amp	YES	70 ns	2.7	YES
KFM1G16Q2B-DEB8T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	40 mA	67108864 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	64MX16	64M	-30 Cel	1K	YES			YES	BOTTOM		R-PBGA-B63	3		Not Qualified			1073741824 bit	1K		260	NAND TYPE	.00005 Amp		76 ns	2.7	NO
K8S1015EZC-DE1CT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	512	YES	MATTE TIN			BOTTOM		R-PBGA-B64	1		Not Qualified			536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1315EBC-DE1FT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1		Not Qualified		BOTTOM	536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
KFG1G16Q2C-AEB8T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	40 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	64MX16	64M	-30 Cel	1K	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B63	3		Not Qualified			1073741824 bit	1K	e1	260	NAND TYPE	.00005 Amp		9 ns	2.7	NO
K8S1215EZC-SC1CT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	70 Cel	32MX16	32M	0 Cel	512	YES	MATTE TIN			BOTTOM		R-PBGA-B64	1		Not Qualified			536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1115EBC-FE1FT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES			YES	BOTTOM		R-PBGA-B64	1		Not Qualified		BOTTOM	536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1215EBC-FC1DT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES			YES	BOTTOM		R-PBGA-B64	1		Not Qualified		BOTTOM	536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
KFM1G16Q2B-DEB6T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	40 mA	67108864 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	64MX16	64M	-30 Cel	1K	YES			YES	BOTTOM		R-PBGA-B63	3		Not Qualified			1073741824 bit	1K		260	NAND TYPE	.00005 Amp		76 ns	2.7	NO
K8S1315ETC-SC1ET	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1		Not Qualified		TOP	536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1215ETC-FC1DT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES			YES	BOTTOM		R-PBGA-B64	1		Not Qualified		TOP	536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
KFWAGH6Q4M-DEB60	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	256K	35 mA	1073741824 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	1GX16	1G	-30 Cel	4K	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B63	1		Not Qualified		INDEPENDENT	17179869184 bit	2K	e3		NAND TYPE	.0001 Amp		76 ns	2.7	NO
K8S1015EZC-DE1DT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	512	YES	MATTE TIN			BOTTOM		R-PBGA-B64	1		Not Qualified			536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
KFG1G16Q2B-DEB6T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	40 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	64MX16	64M	-30 Cel	1K	YES			YES	BOTTOM		R-PBGA-B63	3		Not Qualified			1073741824 bit	1K		260	NAND TYPE	.00005 Amp		70 ns	2.7	NO
K8P2716UZC-JE4DT	Samsung	EEPROM CARD	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	8MX16	8M	-25 Cel	128	YES	MATTE TIN		YES	BOTTOM		S-PBGA-B64	1		Not Qualified			134217728 bit	8/16	e3	260	NOR TYPE	.00004 Amp	YES	70 ns	2.7	YES
K8S1315EBC-DC1ET	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1		Not Qualified		BOTTOM	536870912 bit		e3		NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES
K8S1115ETC-FE1FT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES			YES	BOTTOM		R-PBGA-B64	1		Not Qualified		TOP	536870912 bit				NOR TYPE	.00003 Amp	YES	95 ns	2.7	YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.