EEPROM CARD EEPROM 1,057

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29GL01GS12FHIV10	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				1073741824 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	120 ns	2.7	YES
S29GL128S10FHI013	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				134217728 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	100 ns	2.7	YES
S29GL01GS11FHI013	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				1073741824 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	110 ns	2.7	YES
S29GL512S12FHIV10	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				536870912 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	120 ns	2.7	YES
S29GL01GS12FHIV13	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				1073741824 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	120 ns	2.7	YES
S29GL128S11FHIV10	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				134217728 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	110 ns	2.7	YES
S29GL01GS11FHI023	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				1073741824 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	110 ns	2.7	YES
S29GL256S11FHIV20	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				268435456 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	110 ns	2.7	YES
S29GL512S11FHI013	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				536870912 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	110 ns	2.7	YES
S29GL512S12FHIV23	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				536870912 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	120 ns	2.7	YES
S29GL128S10FHI023	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				134217728 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	100 ns	2.7	YES
S29GL128S10FHI010	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				134217728 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	100 ns	2.7	YES
S29GL256S11FHIV10	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				268435456 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	110 ns	2.7	YES
S29GL128S11FHIV13	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				134217728 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	110 ns	2.7	YES
S29GL01GS12FHIV23	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				1073741824 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	120 ns	2.7	YES
S29GL512S12FHIV13	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				536870912 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	120 ns	2.7	YES
S29GL512S11FHI023	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				536870912 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	110 ns	2.7	YES
S29GL01GS12FHIV20	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				1073741824 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	120 ns	2.7	YES
S29GL01GS11FHI020	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				1073741824 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	110 ns	2.7	YES
S29GL256S10FHI013	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				268435456 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	100 ns	2.7	YES
S29GL128S10FHI020	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				134217728 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	100 ns	2.7	YES
S29GL256S10FHI020	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				268435456 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	100 ns	2.7	YES
S29GL256S10FHI023	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				268435456 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	100 ns	2.7	YES
S29GL512S11FHI010	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				536870912 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	110 ns	2.7	YES
S29GL512S11FHI020	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				536870912 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	110 ns	2.7	YES
S29GL512S12FHIV20	Infineon Technologies	EEPROM CARD	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				536870912 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	120 ns	2.7	YES
HN58C256AFPI-10E	Renesas Electronics	EEPROM CARD	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL			30 mA	32768 words	5	YES	5	8	SMALL OUTLINE	SOP28,.4		EEPROMs		1.27 mm	85 Cel	32KX8	32K	-40 Cel		NO	Matte Tin (Sn)			DUAL		R-PDSO-G28	3			100000 Write/Erase Cycles			Not Qualified	10 ms			262144 bit		64	e3	20	260		.00002 Amp			100 ns	2.7	YES
HN58C256ATI-85E	Renesas Electronics	EEPROM CARD	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL			30 mA	32768 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel	32KX8	32K	-40 Cel		NO	Matte Tin (Sn)			DUAL		R-PDSO-G28	3			100000 Write/Erase Cycles			Not Qualified	10 ms			262144 bit		64	e3	20	260		.00002 Amp			85 ns	2.7	YES
HN58C256API-85E	Renesas Electronics	EEPROM CARD	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL			30 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel	32KX8	32K	-40 Cel		NO	MATTE TIN			DUAL		R-PDIP-T28	1			100000 Write/Erase Cycles			Not Qualified	10 ms			262144 bit		64	e3				.00002 Amp			85 ns	2.7	YES
R1EX24032ASAS0I#S0	Renesas Electronics	EEPROM CARD	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	4096 words	3.3		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel	4KX8	4K	-40 Cel			MATTE TIN	1010DDDR		DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C		32768 bit	1.8 V		e3				.000002 Amp	4.89 mm			2.7
R1EX24032ATA00A#S0	Renesas Electronics	EEPROM CARD	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	4096 words	3.3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel	4KX8	4K	-40 Cel			MATTE TIN	1010DDDR		DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C		32768 bit	1.8 V		e3				.000002 Amp	4.4 mm			2.7
R1EX24032ATAS0I#S0	Renesas Electronics	EEPROM CARD	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	4096 words	3.3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel	4KX8	4K	-40 Cel			MATTE TIN	1010DDDR		DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C		32768 bit	1.8 V		e3				.000002 Amp	4.4 mm			2.7
R1EX24032ASA00A#S0	Renesas Electronics	EEPROM CARD	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	4096 words	3.3		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel	4KX8	4K	-40 Cel			MATTE TIN	1010DDDR		DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C		32768 bit	1.8 V		e3				.000002 Amp	4.89 mm			2.7
K8S1215ETC-FE1DT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES			YES	BOTTOM		R-PBGA-B64	1						Not Qualified			TOP	536870912 bit						NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8P2815UQC-GI4BT	Samsung	EEPROM CARD	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA80,8X12,32		Flash Memories		.8 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B80							Not Qualified			BOTTOM/TOP	134217728 bit		8	e1		260	NOR TYPE	.00003 Amp		YES	65 ns	2.7	YES
K8S1015ETC-DC1CT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1						Not Qualified			TOP	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
KFWAGH6Q4M-DEB8T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	40 mA	1073741824 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	1GX16	1G	-30 Cel	4K	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B63	1						Not Qualified			INDEPENDENT	17179869184 bit		2K	e3			NAND TYPE	.0001 Amp			76 ns	2.7	NO
K8S1215ETC-SC1DT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1						Not Qualified			TOP	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
KFWAGH6U4M-DIB6T	Samsung	EEPROM CARD	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	50 mA	1073741824 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	1GX16	1G	-40 Cel	4K	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B63	1						Not Qualified			INDEPENDENT	17179869184 bit		2K	e3			NAND TYPE	.00016 Amp			76 ns	2.7	NO
K8S1215ETC-DC1DT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1						Not Qualified			TOP	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1315ETC-SE1ET	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1						Not Qualified			TOP	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1115EZC-SE1ET	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	512	YES	MATTE TIN			BOTTOM		R-PBGA-B64	1						Not Qualified				536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8P2716UZC-QI4ET	Samsung	EEPROM CARD	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN BISMUTH		YES	DUAL		R-PDSO-G56	1						Not Qualified				134217728 bit		8/16	e6		260	NOR TYPE	.00004 Amp		YES	80 ns	2.7	YES
K8S1315EBC-DE1ET	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1						Not Qualified			BOTTOM	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8P2815UQC-QI4BT	Samsung	EEPROM CARD	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,32K	55 mA	8388608 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES	MATTE TIN		YES	DUAL		R-PDSO-G56	1						Not Qualified			BOTTOM/TOP	134217728 bit		8	e3		260	NOR TYPE	.00003 Amp		YES	65 ns	2.7	YES
K8S1115ETC-SC1ET	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1						Not Qualified			TOP	536870912 bit			e3		260	NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1115EZC-FE1FT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	512	YES				BOTTOM		R-PBGA-B64	1						Not Qualified				536870912 bit						NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
KFM1216Q2A-DEB5	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR		YES		CMOS	BALL	PARALLEL		64K	20 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	32MX16	32M	-30 Cel	512	YES	MATTE TIN		YES	BOTTOM		R-XBGA-B63	1						Not Qualified				536870912 bit		1K	e3			NAND TYPE	.00005 Amp			76 ns	2.7	NO

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.