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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
X28HC256PI-12	Intersil	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs	100	2.54 mm	85 Cel		32KX8	32K	-40 Cel	NO	TIN LEAD		DUAL		R-PDIP-T28		5.5 V	6.35 mm	1000000 Write/Erase Cycles	15.24 mm	Not Qualified	5 ms	262144 bit	4.5 V	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	128	e0			.0005 Amp	37.4 mm	120 ns	5	YES
X28HC64PI-90	Intersil	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs	100	2.54 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD		DUAL		R-PDIP-T28		5.5 V	6.35 mm	1000000 Write/Erase Cycles	15.24 mm	Not Qualified	5 ms	65536 bit	4.5 V	SOFTWARE DATA PROTECTION; 64 BYTE PAGE WRITE; 100 YEARS DATA RETENTION	64	e0			.0002 Amp	37.4 mm	90 ns	5	YES
X28HC64PIZ-12	Renesas Electronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	5			8	IN-LINE				2.54 mm	85 Cel		8KX8	8K	-40 Cel		MATTE TIN		DUAL		R-PDIP-T28		5.5 V	6.35 mm		15.24 mm		5 ms	65536 bit	4.5 V			e3				37.4 mm	120 ns	5
X28HC64PZ-12	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	5			8	IN-LINE				2.54 mm	70 Cel		8KX8	8K	0 Cel		MATTE TIN		DUAL		R-PDIP-T28		5.5 V	6.35 mm		15.24 mm		5 ms	65536 bit	4.5 V			e3				37.4 mm	120 ns	5
AT28C256-25FM/883	Microchip Technology	EEPROM	MILITARY	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class C	FLAT	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	FLATPACK	FL28,.4	EEPROMs		1.27 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD		DUAL		R-CDFP-F28	1	5.5 V	3.02 mm	10000 Write/Erase Cycles	10.16 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	18.285 mm	250 ns	5	YES
AT28C256F-15FM/883	Microchip Technology	EEPROM	MILITARY	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	FLAT	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	FLATPACK	FL28,.4	EEPROMs	10	1.27 mm	125 Cel		32KX8	32K	-55 Cel	NO	TIN LEAD		DUAL	1	R-CDFP-F28	1	5.5 V	3.02 mm	10000 Write/Erase Cycles	10.16 mm	Not Qualified	3 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	18.285 mm	150 ns	5	YES
AT28C256-15DM/883-815	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class C	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	125 Cel		32KX8	32K	-55 Cel		TIN LEAD		DUAL		R-GDIP-T28		5.5 V	5.72 mm		15.24 mm		10 ms	262144 bit	4.5 V			e0				37.215 mm	150 ns	5
AT28C256F-15DM/883-815	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES		8	IN-LINE	DIP28,.6		10	2.54 mm	125 Cel		32KX8	32K	-55 Cel	NO			DUAL	1	R-GDIP-T28		5.5 V	5.72 mm	10000 Write/Erase Cycles	15.24 mm		3 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64				.0003 Amp	37.215 mm	150 ns	5	YES
AT28HC256-90DM/883	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES		8	IN-LINE	DIP28,.6		10	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD		DUAL		R-GDIP-T28	1	5.5 V	5.72 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	37.215 mm	90 ns	5	YES
AT28HC256-90FM/883	Microchip Technology	EEPROM	MILITARY	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	FLAT	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	FLATPACK	FL28,.4	EEPROMs	10	1.27 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD		DUAL		R-CDFP-F28		5.5 V	3.02 mm	10000 Write/Erase Cycles	10.16 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	18.285 mm	90 ns	5	YES
AT28HC64B-12SU	Microchip Technology	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs	10	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	MATTE TIN		DUAL	1	R-PDSO-G28	3	5.5 V	2.65 mm	100000 Write/Erase Cycles	7.5 mm	Not Qualified	10 ms	65536 bit	4.5 V		64	e3	30	260	.0001 Amp	17.9 mm	120 ns	5	YES
TMS28C64-25N	Texas Instruments	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL		20 mA	8192 words	5	NO	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel		8KX8	8K	0 Cel	NO		YES	DUAL		R-PDIP-T28						Not Qualified		65536 bit			32				.003 Amp		250 ns		YES
TMS28C64-35JL	Texas Instruments	EEPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	8192 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	EEPROMs		2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO		YES	DUAL		R-CDIP-T28		5.5 V	4.907 mm		15.24 mm	Not Qualified		65536 bit	4.5 V		32		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	36.83 mm	350 ns	5	YES
TMS28C64-35J	Texas Instruments	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL		20 mA	8192 words	5	NO	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel		8KX8	8K	0 Cel	NO		YES	DUAL		R-XDIP-T28						Not Qualified		65536 bit			32				.003 Amp		350 ns		YES
TMS28C64-35N	Texas Instruments	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL		20 mA	8192 words	5	NO	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel		8KX8	8K	0 Cel	NO		YES	DUAL		R-PDIP-T28						Not Qualified		65536 bit			32				.003 Amp		350 ns		YES
M38510/26104BZX	Texas Instruments	EEPROM	MILITARY	28	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		32768 words	5			8	FLATPACK					125 Cel		32KX8	32K	-55 Cel				DUAL		R-XDFP-F28		5.5 V				Not Qualified	10 ms	262144 bit	4.5 V								200 ns	5
TMS28C64-25NL	Texas Instruments	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	8192 words	5	NO	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO		YES	DUAL		R-PDIP-T28		5.5 V	5.08 mm		15.24 mm	Not Qualified		65536 bit	4.5 V		32		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	36.32 mm	250 ns	5	YES
TMS28C64-25JL	Texas Instruments	EEPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	8192 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	EEPROMs		2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO		YES	DUAL		R-CDIP-T28		5.5 V	4.907 mm		15.24 mm	Not Qualified		65536 bit	4.5 V		32		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	36.83 mm	250 ns	5	YES
TMS28C64-25J	Texas Instruments	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL		20 mA	8192 words	5	NO	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel		8KX8	8K	0 Cel	NO		YES	DUAL		R-XDIP-T28						Not Qualified		65536 bit			32				.003 Amp		250 ns		YES
TMS28C64-35NL	Texas Instruments	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	8192 words	5	NO	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO		YES	DUAL		R-PDIP-T28		5.5 V	5.08 mm		15.24 mm	Not Qualified		65536 bit	4.5 V		32		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	36.32 mm	350 ns	5	YES
CAT28LV65P-35	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	3.3			8	IN-LINE				2.54 mm	70 Cel		8KX8	8K	0 Cel		TIN LEAD		DUAL		R-PDIP-T28		3.6 V	5.08 mm		15.24 mm	Not Qualified		65536 bit	3 V			e0				36.703 mm	350 ns	3
CAT28LV64H13A25T	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8 mA	8192 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	105 Cel		8KX8	8K	-40 Cel	NO			DUAL		R-PDSO-G28		3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	5 ms	65536 bit	3 V		32		NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	11.8 mm	250 ns	3	YES
CAT28LV65KI-30TE13	Onsemi	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	3.3			8	SMALL OUTLINE				1.27 mm	85 Cel		8KX8	8K	-40 Cel		TIN LEAD		DUAL		R-PDSO-G28	1	3.6 V	2.65 mm		7.5 mm	Not Qualified		65536 bit	3 V			e0				17.9 mm	300 ns	3
CAT28C256H13I12T	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	85 Cel		32KX8	32K	-40 Cel	NO			DUAL		R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	5 ms	262144 bit	4.5 V		64				.00015 Amp	11.8 mm	120 ns	5	YES
CAT28LV64HJ-30TE13	Onsemi	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	3.3			8	SMALL OUTLINE				1.27 mm	70 Cel		8KX8	8K	0 Cel		TIN LEAD		DUAL		R-PDSO-G28	1	3.6 V	2.65 mm		7.5 mm	Not Qualified		65536 bit	3 V			e0				17.9 mm	300 ns	3
CAT28LV256T13I-20T	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	85 Cel		32KX8	32K	-40 Cel	NO	TIN LEAD		DUAL		R-PDSO-G28	2	3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	10 ms	262144 bit	3 V		64	e0			.00015 Amp	11.8 mm	200 ns	3	YES
CAT28C65BJI-12TE13	Onsemi	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel		8KX8	8K	-40 Cel		TIN LEAD		DUAL		R-PDSO-G28	1	5.5 V	2.65 mm		7.5 mm	Not Qualified		65536 bit	4.5 V			e0				17.9 mm	120 ns	5
CAT28LV65LA15	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8 mA	8192 words	3.3	YES	3.3	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	105 Cel		8KX8	8K	-40 Cel	NO		YES	DUAL		R-PDIP-T28		3.6 V	6.35 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	5 ms	65536 bit	3 V		32		NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	37.4 mm	150 ns	3	YES
CAT28LV65J-25	Onsemi	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8 mA	8192 words	3.3	YES	3.3	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL		R-PDSO-G28	1	3.6 V	2.65 mm	100000 Write/Erase Cycles	7.5 mm	Not Qualified	5 ms	65536 bit	3 V		32	e0			.0001 Amp	17.9 mm	250 ns	3	YES
CAT28LV256HPA-30	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	3.3			8	IN-LINE				2.54 mm	105 Cel		32KX8	32K	-40 Cel		TIN LEAD		DUAL		R-PDIP-T28		3.6 V	5.08 mm		15.24 mm	Not Qualified		262144 bit	3 V			e0				36.703 mm	300 ns	3
CAT28C65BFKI-15TE13	Onsemi	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel		8KX8	8K	-40 Cel		TIN LEAD		DUAL		R-PDSO-G28	1	5.5 V	2.65 mm		7.5 mm	Not Qualified		65536 bit	4.5 V			e0				17.9 mm	150 ns	5
CAT28LV65JA-30T	Onsemi	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	3.3			8	SMALL OUTLINE			100	1.27 mm	105 Cel		8KX8	8K	-40 Cel		TIN LEAD		DUAL		R-PDSO-G28	1	3.6 V	2.65 mm		7.5 mm	Not Qualified		65536 bit	3 V	100000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e0				17.9 mm	300 ns	3
CAT28LV64JI-35	Onsemi	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	3.3			8	SMALL OUTLINE				1.27 mm	85 Cel		8KX8	8K	-40 Cel		TIN LEAD		DUAL		R-PDSO-G28	1	3.6 V	2.65 mm		7.5 mm	Not Qualified	5 ms	65536 bit	3 V			e0				17.9 mm	350 ns	3
CAT28C65BHT13I-12TE13	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE, THIN PROFILE				.55 mm	85 Cel		8KX8	8K	-40 Cel		TIN LEAD		DUAL		R-PDSO-G28	2	5.5 V	1.2 mm		8 mm	Not Qualified		65536 bit	4.5 V			e0				11.8 mm	120 ns	5
CAT28C64BXI15	Onsemi	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	SMALL OUTLINE	SOP28,.45	EEPROMs		1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	Tin (Sn)		DUAL		R-PDSO-G28	1	5.5 V	2.65 mm	100000 Write/Erase Cycles	7.5 mm	Not Qualified	5 ms	65536 bit	4.5 V		32	e3			.0001 Amp	17.9 mm	150 ns	5	YES
CAT28C256HFP-20	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	70 Cel		32KX8	32K	0 Cel		TIN LEAD		DUAL		R-PDIP-T28		5.5 V	5.08 mm		15.24 mm	Not Qualified		262144 bit	4.5 V			e0				36.703 mm	200 ns	5
CAT28C64BKI-15TE7	Onsemi	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel		8KX8	8K	-40 Cel		TIN LEAD		DUAL		R-PDSO-G28	1	5.5 V	2.65 mm		7.5 mm	Not Qualified		65536 bit	4.5 V			e0				17.9 mm	150 ns	5
CAT28LV256T13I-30	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	85 Cel		32KX8	32K	-40 Cel	NO	TIN LEAD		DUAL		R-PDSO-G28	2	3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	10 ms	262144 bit	3 V		64	e0			.00015 Amp	11.8 mm	300 ns	3	YES
CAT28C64BHKI-20TE13	Onsemi	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel		8KX8	8K	-40 Cel		TIN LEAD		DUAL		R-PDSO-G28	1	5.5 V	2.65 mm		7.5 mm	Not Qualified		65536 bit	4.5 V			e0				17.9 mm	200 ns	5
CAT28C65BT13-90	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		1.27 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL		R-PDSO-G28	2	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	5 ms	65536 bit	4.5 V		32	e0			.0001 Amp	11.8 mm	90 ns	5	YES
CAT28LV64JI-25TE13	Onsemi	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	3.3			8	SMALL OUTLINE				1.27 mm	85 Cel		8KX8	8K	-40 Cel		TIN LEAD		DUAL		R-PDSO-G28	1	3.6 V	2.65 mm		7.5 mm	Not Qualified		65536 bit	3 V			e0				17.9 mm	250 ns	3
CAT28LV256H13A-25T	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	105 Cel		32KX8	32K	-40 Cel	NO	Tin (Sn)		DUAL		R-PDSO-G28		3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	10 ms	262144 bit	3 V		64	e3			.00015 Amp	11.8 mm	250 ns	3	YES
CAT28C64BT13I-15	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD		DUAL		R-PDSO-G28	2	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	5 ms	65536 bit	4.5 V		32	e0			.0001 Amp	11.8 mm	150 ns	5	YES
CAT28C64BJI-20TE7	Onsemi	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel		8KX8	8K	-40 Cel		TIN LEAD		DUAL		R-PDSO-G28	1	5.5 V	2.65 mm		7.5 mm	Not Qualified		65536 bit	4.5 V			e0				17.9 mm	200 ns	5
CAT28C17AX-20T	Onsemi	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5	NO	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	70 Cel		2KX8	2K	0 Cel	NO	TIN	YES	DUAL		R-PDSO-G28		5.5 V	2.65 mm	10000 Write/Erase Cycles	7.5 mm	Not Qualified	10 ms	16384 bit	4.5 V			e3			.0001 Amp	17.9 mm	200 ns	5	YES
CAT28LV256PA-30	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	105 Cel		32KX8	32K	-40 Cel	NO			DUAL		R-PDIP-T28	1	3.6 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	10 ms	262144 bit	3 V		64				.00015 Amp	36.695 mm	300 ns	3	YES
CAT28C65BW-12T	Onsemi	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	70 Cel		8KX8	8K	0 Cel	NO	MATTE TIN	YES	DUAL		R-PDSO-G28		5.5 V	2.65 mm	100000 Write/Erase Cycles	7.5 mm	Not Qualified	5 ms	65536 bit	4.5 V		32	e3			.0001 Amp	17.9 mm	120 ns	5	YES
CAT28C64BFT13I-12TE7	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE, THIN PROFILE				.55 mm	85 Cel		8KX8	8K	-40 Cel		TIN LEAD		DUAL		R-PDSO-G28	2	5.5 V	1.2 mm		8 mm	Not Qualified		65536 bit	4.5 V			e0				11.8 mm	120 ns	5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.