28 EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
R1EV58064BSCNBI#B0	Renesas Electronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	3			8	SMALL OUTLINE				1.27 mm	85 Cel		8KX8	8K	-40 Cel				DUAL	R-PDSO-G28	3	5.5 V	2.5 mm		8.4 mm		10 ms	65536 bit	2.7 V							18.3 mm	100 ns	3
HN58S256ATI-20	Renesas Electronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	3			8	SMALL OUTLINE, THIN PROFILE			10	.55 mm	85 Cel		32KX8	32K	-40 Cel		TIN LEAD		DUAL	R-PDSO-G28		3.6 V	1.2 mm		8 mm	Not Qualified		262144 bit	2.2 V	100000 ERASE/WRITE CYCLES; 10 YEARS DATA RETENTION; SOFTWARE DATA PROTECTION; 64 BYTE PAGE WRITE		e0				11.8 mm	200 ns	3
HN58V65AT-10E	Renesas Electronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	8192 words	3.3	YES	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	70 Cel		8KX8	8K	0 Cel	NO		YES	DUAL	R-PDSO-G28		5.5 V	1.2 mm		8 mm	Not Qualified	10 ms	65536 bit	2.7 V		64		NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	11.8 mm	100 ns	3	YES
HN58V65AFPI-10	Renesas Electronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	8192 words	3.6	YES	3/5	8	SMALL OUTLINE	SOP28,.45	EEPROMs		1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28		5.5 V	2.5 mm		8.4 mm	Not Qualified	10 ms	65536 bit	2.7 V		64	e0			.000005 Amp	18.3 mm	100 ns	3	YES
HN58V65AT-10	Renesas Electronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	8192 words	3.3	YES	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	70 Cel		8KX8	8K	0 Cel	NO		YES	DUAL	R-PDSO-G28	1	5.5 V	1.2 mm		8 mm	Not Qualified	10 ms	65536 bit	2.7 V		64				.000005 Amp	11.8 mm	100 ns	3	YES
UPD28C64C-20	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	8192 words	5	NO	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD		DUAL	R-PDIP-T28		5.5 V				Not Qualified	10 ms	65536 bit	4.5 V		32	e0			.0001 Amp		200 ns		YES
HN58V256AFP-15	Renesas Electronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel		32KX8	32K	0 Cel		TIN LEAD		DUAL	R-PDSO-G28		5.5 V	2.5 mm		8.4 mm	Not Qualified		262144 bit	2.7 V			e0				18.3 mm	150 ns	3
HN58V66AFP-10E	Renesas Electronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	8192 words	3.3	YES	3/5	8	SMALL OUTLINE	SOP28,.45	EEPROMs		1.27 mm	70 Cel		8KX8	8K	0 Cel	NO		YES	DUAL	R-PDSO-G28		5.5 V	2.5 mm		8.4 mm	Not Qualified	10 ms	65536 bit	2.7 V		64		NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	18.3 mm	100 ns	3	YES
HN85C256AFPI10EZ	Renesas Electronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel		32KX8	32K	-40 Cel				DUAL	R-PDSO-G28		5.5 V	2.5 mm		8.4 mm		10 ms	262144 bit	4.5 V							18.3 mm	100 ns	5
HN58V66AFPI-10	Renesas Electronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	8192 words	3.6	YES	3/5	8	SMALL OUTLINE	SOP28,.45	EEPROMs		1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO		YES	DUAL	R-PDSO-G28	1	5.5 V	2.5 mm		8.4 mm	Not Qualified	10 ms	65536 bit	2.7 V		64				.000005 Amp	18.3 mm	100 ns	3	YES
HN85C256ATI85E	Renesas Electronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE, THIN PROFILE				.55 mm	85 Cel		32KX8	32K	-40 Cel				DUAL	R-PDSO-G28		5.5 V	1.2 mm		8 mm		10 ms	262144 bit	4.5 V							11.8 mm	85 ns	5
HN58C256AP-85	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel		32KX8	32K	0 Cel	NO	TIN LEAD		DUAL	R-PDIP-T28		5.5 V	5.7 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	10 ms	262144 bit	4.5 V		64	e0			.00002 Amp	35.6 mm	85 ns	5	YES
X28HC256PZ-15	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	70 Cel		32KX8	32K	0 Cel		MATTE TIN		DUAL	R-PDIP-T28		5.5 V	6.35 mm		15.24 mm		5 ms	262144 bit	4.5 V			e3				37.4 mm	150 ns	5
X28HC64SZ-70	Renesas Electronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel		8KX8	8K	0 Cel		MATTE TIN		DUAL	R-PDSO-G28	3	5.5 V	2.65 mm		7.5 mm		5 ms	65536 bit	4.5 V			e3				17.9 mm	70 ns	5
X28HC256PIZ-90	Renesas Electronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN		DUAL	R-PDIP-T28		5.5 V	6.35 mm		15.24 mm		5 ms	262144 bit	4.5 V			e3				37.4 mm	90 ns	5
X28HC256SZ-12	Renesas Electronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel		32KX8	32K	0 Cel		MATTE TIN		DUAL	R-PDSO-G28	3	5.5 V	2.65 mm		7.5 mm		5 ms	262144 bit	4.5 V			e3	30	260		17.9 mm	120 ns	5
X28HC64PZ-90	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	5			8	IN-LINE				2.54 mm	70 Cel		8KX8	8K	0 Cel		MATTE TIN		DUAL	R-PDIP-T28		5.5 V	6.35 mm		15.24 mm		5 ms	65536 bit	4.5 V			e3				37.4 mm	90 ns	5
X28HC256PIZ-15	Renesas Electronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN		DUAL	R-PDIP-T28		5.5 V	6.35 mm		15.24 mm		5 ms	262144 bit	4.5 V			e3				37.4 mm	150 ns	5
X28HC64SZ-12	Renesas Electronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel		8KX8	8K	0 Cel		MATTE TIN		DUAL	R-PDSO-G28	3	5.5 V	2.65 mm		7.5 mm		5 ms	65536 bit	4.5 V			e3				17.9 mm	120 ns	5
X28HC256PZ-90	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	70 Cel		32KX8	32K	0 Cel		MATTE TIN		DUAL	R-PDIP-T28		5.5 V	6.35 mm		15.24 mm		5 ms	262144 bit	4.5 V			e3				37.4 mm	90 ns	5
X28HC64SIZ-70	Renesas Electronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel		8KX8	8K	-40 Cel		MATTE TIN		DUAL	R-PDSO-G28	3	5.5 V	2.65 mm		7.5 mm		5 ms	65536 bit	4.5 V			e3				17.9 mm	70 ns	5
X28HC256PZ-12	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	70 Cel		32KX8	32K	0 Cel		MATTE TIN		DUAL	R-PDIP-T28		5.5 V	6.35 mm		15.24 mm		5 ms	262144 bit	4.5 V			e3				37.4 mm	120 ns	5
X28HC256SIZ-12	Renesas Electronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN		DUAL	R-PDSO-G28	3	5.5 V	2.65 mm		7.5 mm		5 ms	262144 bit	4.5 V			e3	30	260		17.9 mm	120 ns	5
X28HC256SIZ-90	Renesas Electronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN		DUAL	R-PDSO-G28	3	5.5 V	2.65 mm		7.5 mm		5 ms	262144 bit	4.5 V			e3	30	260		17.9 mm	90 ns	5
X28HC64PIZ-90	Renesas Electronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	5			8	IN-LINE				2.54 mm	85 Cel		8KX8	8K	-40 Cel		MATTE TIN		DUAL	R-PDIP-T28		5.5 V	6.35 mm		15.24 mm		5 ms	65536 bit	4.5 V			e3				37.4 mm	90 ns	5
X28HC256SI-90	Renesas Electronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel		32KX8	32K	-40 Cel				DUAL	R-PDSO-G28		5.5 V	2.65 mm		7.5 mm		5 ms	262144 bit	4.5 V							17.9 mm	90 ns	5
X28HC64SIZ-12T1	Renesas Electronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	MATTE TIN		DUAL	R-PDSO-G28	3	5.5 V	2.65 mm	1000000 Write/Erase Cycles	7.5 mm	Not Qualified	5 ms	65536 bit	4.5 V		64	e3			.0002 Amp	17.9 mm	120 ns	5	YES
X28HC256PIZ-12	Renesas Electronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN		DUAL	R-PDIP-T28		5.5 V	6.35 mm		15.24 mm		5 ms	262144 bit	4.5 V			e3				37.4 mm	120 ns	5
X28HC64SIZ-12	Renesas Electronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel		8KX8	8K	-40 Cel		MATTE TIN		DUAL	R-PDSO-G28	3	5.5 V	2.65 mm		7.5 mm		5 ms	65536 bit	4.5 V			e3				17.9 mm	120 ns	5
KM28C65A-25	Samsung	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs	10	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDIP-T28		5.5 V	5.59 mm		15.24 mm	Not Qualified		65536 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	64	e0			.0001 Amp		250 ns	5	YES
KM28C17-20	Samsung	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	5	NO	5	8	IN-LINE	DIP28,.6	EEPROMs	10	2.54 mm	70 Cel		2KX8	2K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDIP-T28		5.5 V	5.59 mm		15.24 mm	Not Qualified		16384 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	32	e0			.0001 Amp		200 ns	5	YES
KM28C65AI-20	Samsung	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDIP-T28		5.5 V	5.59 mm		15.24 mm	Not Qualified		65536 bit	4.5 V		64	e0			.0001 Amp		200 ns	5	YES
KM28C64AI-25	Samsung	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs	10	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD		DUAL	R-PDIP-T28		5.5 V	5.59 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	5 ms	65536 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	64	e0			.0001 Amp		250 ns	5	YES
KM28C65P25	Samsung	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		30 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel		8KX8	8K	0 Cel	NO		YES	DUAL	R-PDIP-T28				10000 Write/Erase Cycles		Not Qualified		65536 bit			32				.0001 Amp		250 ns		YES
KM28C65B-15	Samsung	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDIP-T28		5.5 V	5.59 mm		15.24 mm	Not Qualified		65536 bit	4.5 V		64	e0			.0001 Amp		150 ns	5	YES
KM2865A-25	Samsung	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	PARALLEL			8192 words	5	NO	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDIP-T28	3					Not Qualified	10 ms	65536 bit				e0					250 ns		YES
KM28C17I-15	Samsung	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	5	NO	5	8	IN-LINE	DIP28,.6	EEPROMs	10	2.54 mm	85 Cel		2KX8	2K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDIP-T28		5.5 V	5.59 mm		15.24 mm	Not Qualified		16384 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	32	e0			.0001 Amp		150 ns	5	YES
KM28C64BI-15	Samsung	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD		DUAL	R-PDIP-T28		5.5 V	5.59 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	5 ms	65536 bit	4.5 V		64	e0			.0001 Amp		150 ns	5	YES
KM2864A-20	Samsung	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	PARALLEL		120 mA	8192 words	5	NO	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD		DUAL	R-PDIP-T28	3					Not Qualified	10 ms	65536 bit				e0			.05 Amp		200 ns		YES
KM28C64BI-09	Samsung	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD		DUAL	R-PDIP-T28		5.5 V	5.59 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	5 ms	65536 bit	4.5 V		64	e0			.0001 Amp		90 ns	5	YES
KM28C256A-09	Samsung	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD		DUAL	R-PDIP-T28		5.5 V	5.59 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	5 ms	262144 bit	4.5 V		64	e0			.0001 Amp		90 ns	5	YES
KM2865AH-25	Samsung	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	PARALLEL			8192 words	5	NO	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDIP-T28	3					Not Qualified	2 ms	65536 bit				e0					250 ns		YES
KM28C256I-15	Samsung	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs	10	2.54 mm	85 Cel		32KX8	32K	-40 Cel	NO	TIN LEAD		DUAL	R-PDIP-T28		5.5 V	5.59 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	5 ms	262144 bit	4.5 V		64	e0			.0001 Amp	37.2 mm	150 ns	5	YES
KM2865A-30	Samsung	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	PARALLEL			8192 words	5	NO	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDIP-T28	3					Not Qualified	10 ms	65536 bit				e0					300 ns		YES
KM2817A30	Samsung	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	PARALLEL			2048 words	5	NO	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel		2KX8	2K	0 Cel	NO	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDIP-T28						Not Qualified	10 ms	16384 bit				e0					300 ns		NO
KM28C256A-12	Samsung	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD		DUAL	R-PDIP-T28		5.5 V	5.59 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	5 ms	262144 bit	4.5 V		64	e0			.0001 Amp		120 ns	5	YES
KM28C256AI-15	Samsung	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD		DUAL	R-PDIP-T28		5.5 V	5.59 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	5 ms	262144 bit	4.5 V		64	e0			.0001 Amp		150 ns	5	YES
KM28C64PI25	Samsung	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		30 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel		8KX8	8K	-40 Cel	NO			DUAL	R-PDIP-T28				10000 Write/Erase Cycles		Not Qualified	5 ms	65536 bit			32				.0001 Amp		250 ns		YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.