28 EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M28C64C-150N6TR	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words		5			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH			40	.55 mm	85 Cel		8KX8	8K	-40 Cel				DUAL	R-PDSO-G28	5.5 V	1.25 mm		8 mm	Not Qualified		65536 bit	4.5 V	32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS				11.8 mm	150 ns	5
M28256-120MS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		30 mA	32768 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO	TIN LEAD		DUAL	R-PDSO-G28			100000 Write/Erase Cycles		Not Qualified	3 ms	262144 bit			64	e0	.0001 Amp		120 ns		YES
M28256-12NS1	STMicroelectronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD		DUAL	R-PDSO-G28	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	5 ms	262144 bit	4.5 V		64	e0	.0001 Amp	11.8 mm	120 ns	5	YES
M28C16-30WBS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		3			8	IN-LINE			40	2.54 mm	85 Cel		2KX8	2K	-40 Cel				DUAL	R-PDIP-T28	3.6 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified		16384 bit	2.7 V	ENDURANCE >100000 WRITE/ERASE CYCLES; DATA RETENTION > 40 YEARS; 32 BYTE PAGE WRITE				37.085 mm	300 ns	3
M28C64C-200MS6TR	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words		5			8	SMALL OUTLINE			40	1.27 mm	85 Cel		8KX8	8K	-40 Cel				DUAL	R-PDSO-G28	5.5 V	2.65 mm		7.5 mm	Not Qualified		65536 bit	4.5 V	32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS				17.9 mm	200 ns	5
M28C64-25WMS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	SMALL OUTLINE	SOP28,.4	EEPROMs	40	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28	3.6 V	2.65 mm		7.5 mm	Not Qualified	5 ms	65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0	.00002 Amp	17.9 mm	250 ns	3	YES
M28C64-15WNS1T	STMicroelectronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs	40	.55 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28	3.6 V	1.2 mm		8 mm	Not Qualified	5 ms	65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0	.00002 Amp	11.8 mm	150 ns	3	YES
M28256-15NS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD		DUAL	R-PDSO-G28	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	5 ms	262144 bit	4.5 V		64	e0	.0001 Amp	11.8 mm	150 ns	5	YES
M28C64-30WBS1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	IN-LINE	DIP28,.6	EEPROMs	40	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDIP-T28	3.6 V	5.08 mm		15.24 mm	Not Qualified	5 ms	65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0	.00002 Amp	36.02 mm	300 ns	3	YES
M28256-25WNS1T	STMicroelectronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3			8	SMALL OUTLINE, THIN PROFILE				.55 mm	70 Cel	3-STATE	32KX8	32K	0 Cel				DUAL	R-PDSO-G28	3.6 V	1.2 mm		8 mm	Not Qualified	5 ms	262144 bit	2.7 V					11.8 mm	250 ns	3
M28256-25MS1	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	70 Cel		32KX8	32K	0 Cel	NO	MATTE TIN		DUAL	R-PDSO-G28	5.5 V	2.65 mm	100000 Write/Erase Cycles	7.5 mm	Not Qualified	5 ms	262144 bit	4.5 V		64	e3	.0001 Amp	17.9 mm	250 ns	5	YES
M28C64-12NS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs	40	.55 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28	5.5 V	1.2 mm		8 mm	Not Qualified	3 ms	65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0	.0001 Amp	11.8 mm	120 ns	5	YES
M28C64-15NS1	STMicroelectronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs	40	.55 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28	5.5 V	1.2 mm		8 mm	Not Qualified	3 ms	65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0	.0001 Amp	11.8 mm	150 ns	5	YES
M28C64-150P1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		30 mA	8192 words		5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDIP-T28					Not Qualified		65536 bit			64	e0	.0001 Amp		150 ns		YES
M28C64-120MS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		30 mA	8192 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28					Not Qualified		65536 bit			64	e0	.0001 Amp		120 ns		YES
M28LV64X-300MS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		15 mA	8192 words		3.3	YES	3.3	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD		DUAL	R-PDSO-G28			100000 Write/Erase Cycles		Not Qualified	10 ms	65536 bit			32	e0	.00005 Amp		300 ns		YES
M28LV64X-200MS1	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		15 mA	8192 words		3.3	YES	3.3	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD		DUAL	R-PDSO-G28			100000 Write/Erase Cycles		Not Qualified	10 ms	65536 bit			32	e0	.00005 Amp		200 ns		YES
M28C64-90NS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs	40	.55 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28	5.5 V	1.2 mm		8 mm	Not Qualified	3 ms	65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0	.0001 Amp	11.8 mm	90 ns	5	YES
M28LV16-250N6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		3.3			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH				.55 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel				DUAL	R-PDSO-G28	3.6 V	1.25 mm		8 mm	Not Qualified		16384 bit	2.7 V					11.8 mm	250 ns	3
M28C64-90P1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		30 mA	8192 words		5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDIP-T28					Not Qualified		65536 bit			64	e0	.0001 Amp		90 ns		YES
M28256-90WBS1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3	YES	3/3.3	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel		32KX8	32K	0 Cel	NO	MATTE TIN		DUAL	R-PDIP-T28	3.6 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	5 ms	262144 bit	2.7 V		64	e3	.00002 Amp	36.02 mm	90 ns	3	YES
M28C64-15MS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs	40	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28	5.5 V	2.65 mm		7.5 mm	Not Qualified	3 ms	65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0	.0001 Amp	17.9 mm	150 ns	5	YES
M28C64-15WNS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs	40	.55 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28	3.6 V	1.2 mm		8 mm	Not Qualified	5 ms	65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0	.00002 Amp	11.8 mm	150 ns	3	YES
M28C64-12BS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs	40	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDIP-T28	5.5 V	5.08 mm		15.24 mm	Not Qualified	3 ms	65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0	.0001 Amp	36.02 mm	120 ns	5	YES
M28C64-90WNS1	STMicroelectronics	EEPROM	COMMERCIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs	40	.55 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28	3.6 V	1.25 mm		8 mm	Not Qualified		65536 bit	2.7 V	40 YEARS DATA RETENTION; SOFTWARE DATA PROTECTION	64	e0	.00002 Amp	11.8 mm	90 ns	3	YES
M28256-15WNS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD		DUAL	R-PDSO-G28	3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	5 ms	262144 bit	2.7 V		64	e0	.00002 Amp	11.8 mm	150 ns	3	YES
M28C64-90BS1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs	40	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDIP-T28	5.5 V	5.08 mm		15.24 mm	Not Qualified	3 ms	65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0	.0001 Amp	36.02 mm	90 ns	5	YES
M28C17-90N1	STMicroelectronics	EEPROM	COMMERCIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		30 mA	2048 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs		.55 mm	70 Cel		2KX8	2K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28					Not Qualified		16384 bit			64	e0	.0001 Amp		90 ns		YES
M28C17-150MS1	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	2048 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28	5.5 V	2.65 mm		7.5 mm	Not Qualified	3 ms	16384 bit	4.5 V		64	e0	.0001 Amp	17.9 mm	150 ns	5	YES
M28256-12MS1T	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	MATTE TIN		DUAL	R-PDSO-G28	5.5 V	2.65 mm	100000 Write/Erase Cycles	7.5 mm	Not Qualified	5 ms	262144 bit	4.5 V		64	e3	.0001 Amp	17.9 mm	120 ns	5	YES
M28C64-20WMS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	SMALL OUTLINE	SOP28,.4	EEPROMs	40	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28	3.6 V	2.65 mm		7.5 mm	Not Qualified	5 ms	65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0	.00002 Amp	17.9 mm	200 ns	3	YES
M28C64-120N6	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		30 mA	8192 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs		.55 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28					Not Qualified		65536 bit			64	e0	.0001 Amp		120 ns		YES
M28256-90MS1	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD		DUAL	R-PDSO-G28	5.5 V	2.65 mm	100000 Write/Erase Cycles	7.5 mm	Not Qualified	5 ms	262144 bit	4.5 V		64	e0	.0001 Amp	17.9 mm	90 ns	5	YES
M28256-20NS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD		DUAL	R-PDSO-G28	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	5 ms	262144 bit	4.5 V		64	e0	.0001 Amp	11.8 mm	200 ns	5	YES
M28C64-150XP6	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		30 mA	8192 words		5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDIP-T28					Not Qualified		65536 bit			64	e0	.0001 Amp		150 ns		YES
M28256-20BS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	MATTE TIN		DUAL	R-PDIP-T28	5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	5 ms	262144 bit	4.5 V		64	e3	.0001 Amp	36.02 mm	200 ns	5	YES
M28C17-150N6	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		30 mA	2048 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs		.55 mm	85 Cel		2KX8	2K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28					Not Qualified		16384 bit			64	e0	.0001 Amp		150 ns		YES
M28LV64-250N6	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words			YES	3/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs	40	.55 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28	3.6 V	1.25 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		65536 bit	2.7 V	ENDURANCE >100000 ERASE/WRITE CYCLES; DATA RETENTION >40 YEARS; SOFTWARE DATA PROTECTION	64	e0	.00002 Amp	11.8 mm	250 ns	3	YES
M27C256B-70N3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			30 mA	32768 words	COMMON	5		5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	OTP ROMs		.55 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		TIN LEAD		DUAL	R-PDSO-G28					Not Qualified		262144 bit				e0	.0001 Amp		70 ns	2.7
M28LV16-200N6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		3.3			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH				.55 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel				DUAL	R-PDSO-G28	3.6 V	1.25 mm		8 mm	Not Qualified		16384 bit	2.7 V					11.8 mm	200 ns	3
M28C64-15NS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs	40	.55 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28	5.5 V	1.2 mm		8 mm	Not Qualified	3 ms	65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0	.0001 Amp	11.8 mm	150 ns	5	YES
M27C256B-70N6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			30 mA	32768 words	COMMON	5		5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	OTP ROMs		.55 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		TIN LEAD		DUAL	R-PDSO-G28					Not Qualified		262144 bit				e0	.0001 Amp		70 ns	2.7
M28C17-120MS1	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	2048 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28	5.5 V	2.65 mm		7.5 mm	Not Qualified	3 ms	16384 bit	4.5 V		64	e0	.0001 Amp	17.9 mm	120 ns	5	YES
M28C64X-150P6	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs	40	2.54 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD		DUAL	R-PDIP-T28	5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	5 ms	65536 bit	4.5 V	32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS	32	e0	.0001 Amp	37.085 mm	150 ns	5	YES
M27C256B-80XN3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			30 mA	32768 words	COMMON	5		5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	OTP ROMs		.55 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		TIN LEAD		DUAL	R-PDSO-G28							262144 bit				e0	.0001 Amp		80 ns	2.7
M27C256B-90XN3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			30 mA	32768 words	COMMON	5		5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	OTP ROMs		.55 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		TIN LEAD		DUAL	R-PDSO-G28							262144 bit				e0	.0001 Amp		90 ns	2.7
M28C64C-200M1	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	SMALL OUTLINE	SOP28,.5	EEPROMs	10	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28	5.5 V		100000 Write/Erase Cycles		Not Qualified	5 ms	65536 bit	4.5 V	32 BYTE PAGE WRITE; 100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 10 YEARS	32	e0	.0001 Amp		200 ns	5	YES
M27C256B-25N1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			30 mA	32768 words	COMMON	5		5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	OTP ROMs		.55 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		TIN LEAD		DUAL	R-PDSO-G28					Not Qualified		262144 bit				e0	.0001 Amp		250 ns	2.7

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.