28 EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M28256-200NS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		30 mA	32768 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs		.55 mm	85 Cel		32KX8	32K	-40 Cel	NO	TIN LEAD		DUAL		R-PDSO-G28				100000 Write/Erase Cycles			Not Qualified	3 ms		262144 bit			64	e0			.0001 Amp		200 ns		YES
M28C64-12NS1	STMicroelectronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs	40	.55 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL		R-PDSO-G28		5.5 V	1.2 mm			8 mm	Not Qualified	3 ms		65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0			.0001 Amp	11.8 mm	120 ns	5	YES
M28C64C-150MS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL		R-PDSO-G28		5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms		65536 bit	4.5 V		32	e0			.0001 Amp	17.9 mm	150 ns	5	YES
M28256-90MS1T	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5			8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel				DUAL		R-PDSO-G28		5.5 V	2.65 mm			7.5 mm	Not Qualified	5 ms		262144 bit	4.5 V							17.9 mm	90 ns	5
M28LV16-200N6	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	2048 words		3.3	YES	3/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs		.55 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	NO	TIN LEAD	YES	DUAL		R-PDSO-G28		3.6 V	1.25 mm			8 mm	Not Qualified			16384 bit	2.7 V		64	e0			.00005 Amp	11.8 mm	200 ns	3	YES
M28256-25WNS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3			8	SMALL OUTLINE, THIN PROFILE				.55 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel				DUAL		R-PDSO-G28		3.6 V	1.2 mm			8 mm	Not Qualified	5 ms		262144 bit	2.7 V							11.8 mm	250 ns	3
M28LV64-250XN1	STMicroelectronics	EEPROM	COMMERCIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words			YES	3/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs	40	.55 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL		R-PDSO-G28		3.6 V	1.25 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			65536 bit	2.7 V	ENDURANCE >100000 ERASE/WRITE CYCLES; DATA RETENTION >40 YEARS; SOFTWARE DATA PROTECTION	64	e0			.00002 Amp	11.8 mm	250 ns	3	YES
M28256-90NS3	STMicroelectronics	EEPROM	AUTOMOTIVE	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH				.55 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel				DUAL		R-PDSO-G28		5.5 V	1.25 mm			8 mm	Not Qualified			262144 bit	4.5 V							11.8 mm	90 ns	5
M28C64-90WNS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs	40	.55 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL		R-PDSO-G28		3.6 V	1.25 mm			8 mm	Not Qualified			65536 bit	2.7 V	40 YEARS DATA RETENTION; SOFTWARE DATA PROTECTION	64	e0			.00002 Amp	11.8 mm	90 ns	3	YES
M28C17-150MS1T	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5			8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	2KX8	2K	0 Cel				DUAL		R-PDSO-G28		5.5 V	2.65 mm			7.5 mm	Not Qualified	3 ms		16384 bit	4.5 V							17.9 mm	150 ns	5
M27C256B-45XN6XTR	STMicroelectronics	EEPROM CARD	OTHER	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			30 mA	32768 words	COMMON	5		5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	OTP ROMs		.55 mm	80 Cel	3-STATE	32KX8	32K	-40 Cel		TIN LEAD		DUAL		R-PDSO-G28										262144 bit				e0			.0001 Amp		45 ns	2.7
M28LV64X-200MS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		15 mA	8192 words		3.3	YES	3.3	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD		DUAL		R-PDSO-G28				100000 Write/Erase Cycles			Not Qualified	10 ms		65536 bit			32	e0			.00005 Amp		200 ns		YES
M28C64-150MS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		30 mA	8192 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL		R-PDSO-G28							Not Qualified			65536 bit			64	e0			.0001 Amp		150 ns		YES
M28C64-150P6	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		30 mA	8192 words		5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL		R-PDIP-T28							Not Qualified			65536 bit			64	e0			.0001 Amp		150 ns		YES
M28LV64-200P6	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	8192 words			YES	3/3.3	8	IN-LINE	DIP28,.6	EEPROMs	40	2.54 mm	85 Cel		8KX8	8K	-40 Cel	NO	MATTE TIN	YES	DUAL		R-PDIP-T28		3.6 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified			65536 bit	2.7 V	ENDURANCE >100000 ERASE/WRITE CYCLES; DATA RETENTION >40 YEARS; SOFTWARE DATA PROTECTION	64	e3			.00002 Amp	36.02 mm	200 ns	3	YES
M28LV64C-200N6	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		15 mA	8192 words		3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs		.55 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL		R-PDSO-G28				100000 Write/Erase Cycles			Not Qualified	10 ms		65536 bit			32	e0			.00005 Amp		200 ns		YES
M28C17-A30WBS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		15 mA	2048 words			NO	3/3.3	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel		2KX8	2K	-40 Cel	NO	MATTE TIN	YES	DUAL		R-PDIP-T28							Not Qualified			16384 bit			32	e3			.00002 Amp		300 ns		YES
M28C64-15WNS1	STMicroelectronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs	40	.55 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL		R-PDSO-G28		3.6 V	1.2 mm			8 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0			.00002 Amp	11.8 mm	150 ns	3	YES
M28256-20WBS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3	YES	3/3.3	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	MATTE TIN		DUAL		R-PDIP-T28		3.6 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		262144 bit	2.7 V		64	e3			.00002 Amp	36.02 mm	200 ns	3	YES
M28256-25MS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO	MATTE TIN		DUAL		R-PDSO-G28		5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e3			.0001 Amp	17.9 mm	250 ns	5	YES
M28LV64-250XMS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words			YES	3/3.3	8	SMALL OUTLINE	SOP28,.4	EEPROMs	40	1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	MATTE TIN	YES	DUAL		R-PDSO-G28		3.6 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified			65536 bit	2.7 V	ENDURANCE >100000 ERASE/WRITE CYCLES; DATA RETENTION >40 YEARS; SOFTWARE DATA PROTECTION	64	e3			.00002 Amp	17.9 mm	250 ns	3	YES
5962-01-263-5729	STMicroelectronics	EEPROM CARD	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			125 mA	65536 words	COMMON	5		5	8	IN-LINE	DIP28,.6	EPROMs		2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel				DUAL		R-XDIP-T28	1						Not Qualified			524288 bit									250 ns	2.7
5962-01-194-1738	STMicroelectronics	EEPROM CARD	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			75 mA	16384 words	COMMON	5		5	8	IN-LINE	DIP28,.6	EPROMs		2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel				DUAL		R-XDIP-T28	1						Not Qualified			131072 bit									250 ns	2.7
5962-01-373-7913	STMicroelectronics	EEPROM CARD	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			75 mA	8192 words	COMMON	5		5	8	IN-LINE	DIP28,.6	EPROMs		2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel				DUAL		R-XDIP-T28	1						Not Qualified			65536 bit									250 ns	2.7
5962-01-393-0671	STMicroelectronics	EEPROM CARD	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			75 mA	16384 words	COMMON	5		5	8	IN-LINE	DIP28,.6	EPROMs		2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel				DUAL		R-XDIP-T28	1						Not Qualified			131072 bit									200 ns	2.7
5962-01-291-5474	STMicroelectronics	EEPROM CARD	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			100 mA	32768 words	COMMON	5		5	8	IN-LINE	DIP28,.6	EPROMs		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel				DUAL		R-XDIP-T28	1						Not Qualified			262144 bit									250 ns	2.7
5962-01-295-4576	STMicroelectronics	EEPROM CARD	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			75 mA	8192 words	COMMON	5		5	8	IN-LINE	DIP28,.6	EPROMs		2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel				DUAL		R-XDIP-T28	1						Not Qualified			65536 bit									300 ns	2.7
5962-01-329-8723	STMicroelectronics	EEPROM CARD	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			100 mA	32768 words	COMMON	5		5	8	IN-LINE	DIP28,.6	EPROMs		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel				DUAL		R-XDIP-T28	1						Not Qualified			262144 bit									170 ns	2.7
PCF29F64P	NXP Semiconductors	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5			8	IN-LINE			10	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel				DUAL		R-PDIP-T28		5.5 V	5.1 mm			15.24 mm	Not Qualified			65536 bit	4.5 V	DATA RETENTION > 10 YEARS						35.5 mm	200 ns	5
PCF29F64T	NXP Semiconductors	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words		5			8	SMALL OUTLINE			10	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel				DUAL		R-PDSO-G28		5.5 V	2.65 mm			7.5 mm	Not Qualified			65536 bit	4.5 V	DATA RETENTION > 10 YEARS						17.9 mm	200 ns	5
DS28DG02E-3C+T	Maxim Integrated	EEPROM	INDUSTRIAL	28	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	.8 mA	256 words		3.3		2.5/5	8	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP28,.25	EEPROMs	40	.65 mm	85 Cel		256X8	256	-40 Cel		MATTE TIN		DUAL	HARDWARE	R-PDSO-G28	1	5.25 V	1.1 mm	200000 Write/Erase Cycles	2 MHz	4.4 mm	Not Qualified		SPI	2048 bit	2.2 V			e3			.0001 Amp	9.7 mm		3
DS28DG02E-3C+	Maxim Integrated	EEPROM	INDUSTRIAL	28	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	.8 mA	256 words		3.3		2.5/5	8	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP28,.25	EEPROMs	40	.65 mm	85 Cel		256X8	256	-40 Cel		MATTE TIN		DUAL	HARDWARE	R-PDSO-G28	1	5.25 V	1.1 mm	200000 Write/Erase Cycles	2 MHz	4.4 mm	Not Qualified		SPI	2048 bit	2.2 V			e3	30	260	.0001 Amp	9.7 mm		3
TC58257AP-17LV	Toshiba	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5			8	IN-LINE				2.54 mm	70 Cel	3-STATE	32KX8	32K	-10 Cel		TIN LEAD		DUAL		R-PDIP-T28		5.5 V	5.3 mm			15.24 mm	Not Qualified			262144 bit	4.5 V			e0				37 mm	170 ns	12
TC58257AP-20LV	Toshiba	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5			8	IN-LINE				2.54 mm	70 Cel	3-STATE	32KX8	32K	-10 Cel		TIN LEAD		DUAL		R-PDIP-T28		5.5 V	5.3 mm			15.24 mm	Not Qualified			262144 bit	4.5 V			e0				37 mm	200 ns	12
TC58257AF-25	Toshiba	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5			8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	32KX8	32K	-10 Cel		TIN LEAD		DUAL		R-PDSO-G28		5.5 V	2.7 mm			8.8 mm	Not Qualified			262144 bit	4.5 V	BULK ERASE		e0				18.5 mm	250 ns	12
TMM2764ADI-15	Toshiba	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				8192 words	COMMON	5		5	8	IN-LINE	DIP28,.6	EPROMs		2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel		Tin/Lead (Sn/Pb)		DUAL		R-XDIP-T28							Not Qualified			65536 bit				e0					150 ns	5
TC58257AF-17LV(TP1)	Toshiba	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5			8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	32KX8	32K	-10 Cel		TIN LEAD		DUAL		R-PDSO-G28		5.5 V	2.7 mm			8.8 mm	Not Qualified			262144 bit	4.5 V			e0				18.5 mm	170 ns	12
TC58257AF-20LV(TP2)	Toshiba	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5			8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	32KX8	32K	-10 Cel		TIN LEAD		DUAL		R-PDSO-G28		5.5 V	2.7 mm			8.8 mm	Not Qualified			262144 bit	4.5 V			e0				18.5 mm	200 ns	12
TC58257AP-20	Toshiba	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5			8	IN-LINE				2.54 mm	70 Cel	3-STATE	32KX8	32K	-10 Cel		TIN LEAD		DUAL		R-PDIP-T28		5.5 V	5.3 mm			15.24 mm	Not Qualified			262144 bit	4.5 V	BULK ERASE		e0				37 mm	200 ns	12
TMM2764AD-20	Toshiba	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	COMMON	5		5	8	IN-LINE	DIP28,.6	EPROMs		2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel		TIN LEAD		DUAL		R-PDIP-T28		5.25 V	5.2 mm			15.24 mm	Not Qualified			65536 bit	4.75 V	LG-MAX		e0				37.7 mm	200 ns	5
TC58257AF-25LV	Toshiba	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5			8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	32KX8	32K	-10 Cel		TIN LEAD		DUAL		R-PDSO-G28		5.5 V	2.7 mm			8.8 mm	Not Qualified			262144 bit	4.5 V			e0				18.5 mm	250 ns	12
TC58257AF-17LV(TP2)	Toshiba	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5			8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	32KX8	32K	-10 Cel		TIN LEAD		DUAL		R-PDSO-G28		5.5 V	2.7 mm			8.8 mm	Not Qualified			262144 bit	4.5 V			e0				18.5 mm	170 ns	12
TC58257AP-25	Toshiba	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5			8	IN-LINE				2.54 mm	70 Cel	3-STATE	32KX8	32K	-10 Cel		TIN LEAD		DUAL		R-PDIP-T28		5.5 V	5.3 mm			15.24 mm	Not Qualified			262144 bit	4.5 V	BULK ERASE		e0				37 mm	250 ns	12
TC58257AF-25LV(TP1)	Toshiba	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5			8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	32KX8	32K	-10 Cel		TIN LEAD		DUAL		R-PDSO-G28		5.5 V	2.7 mm			8.8 mm	Not Qualified			262144 bit	4.5 V			e0				18.5 mm	250 ns	12
TC58257AF-20LV(TP1)	Toshiba	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5			8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	32KX8	32K	-10 Cel		TIN LEAD		DUAL		R-PDSO-G28		5.5 V	2.7 mm			8.8 mm	Not Qualified			262144 bit	4.5 V			e0				18.5 mm	200 ns	12
TC58257AF-20LV	Toshiba	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5			8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	32KX8	32K	-10 Cel		TIN LEAD		DUAL		R-PDSO-G28		5.5 V	2.7 mm			8.8 mm	Not Qualified			262144 bit	4.5 V			e0				18.5 mm	200 ns	12
TMM2764ADI-20	Toshiba	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				8192 words	COMMON	5		5	8	IN-LINE	DIP28,.6	EPROMs		2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel		Tin/Lead (Sn/Pb)		DUAL		R-XDIP-T28							Not Qualified			65536 bit				e0					200 ns	5
TC58257AF-20LV(EL)	Toshiba	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5			8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	32KX8	32K	-10 Cel		TIN LEAD		DUAL		R-PDSO-G28		5.5 V	2.7 mm			8.8 mm	Not Qualified			262144 bit	4.5 V			e0				18.5 mm	200 ns	12

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.