28 EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
HN58C256AFP-85E	Renesas Electronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	SMALL OUTLINE	SOP28,.45	EEPROMs		1.27 mm	70 Cel	32KX8	32K	0 Cel	NO			DUAL	R-PDSO-G28	3	5.5 V	2.5 mm	100000 Write/Erase Cycles	8.4 mm	Not Qualified	10 ms	262144 bit	4.5 V		64		20	260	.00002 Amp	18.3 mm	85 ns	5	YES
HN58V256AT-15	Renesas Electronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE, THIN PROFILE				.55 mm	70 Cel	32KX8	32K	0 Cel		TIN LEAD		DUAL	R-PDSO-G28		5.5 V	1.2 mm		8 mm	Not Qualified		262144 bit	2.7 V			e0				11.8 mm	150 ns	3
HN58V256AP-15	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	3			8	IN-LINE				2.54 mm	70 Cel	32KX8	32K	0 Cel		TIN LEAD		DUAL	R-PDIP-T28		5.5 V	5.7 mm		15.24 mm	Not Qualified		262144 bit	2.7 V			e0				35.6 mm	150 ns	3
HN58V256AT-12E	Renesas Electronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	3	YES	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	70 Cel	32KX8	32K	0 Cel	NO			DUAL	R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	10 ms	262144 bit	2.7 V		64		NOT SPECIFIED	NOT SPECIFIED	.00002 Amp	11.8 mm	120 ns	3	YES
R1EV58064BDANBI#B0	Renesas Electronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	3			8	IN-LINE				2.54 mm	85 Cel	8KX8	8K	-40 Cel				DUAL	R-PDIP-T28	1	5.5 V	5.7 mm		15.24 mm		10 ms	65536 bit	2.7 V							35.6 mm	100 ns	3
HN58V65ATI-10	Renesas Electronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	8192 words	3.6	YES	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	85 Cel	8KX8	8K	-40 Cel	NO		YES	DUAL	R-PDSO-G28	1	5.5 V	1.2 mm		8 mm	Not Qualified	10 ms	65536 bit	2.7 V		64				.000005 Amp	11.8 mm	100 ns	3	YES
UPD28C64C-25	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	8192 words	5	NO	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel	8KX8	8K	0 Cel	NO	TIN LEAD		DUAL	R-PDIP-T28		5.5 V				Not Qualified	10 ms	65536 bit	4.5 V		32	e0			.0001 Amp		250 ns		YES
HN58C256AP-10E	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel	32KX8	32K	0 Cel	NO			DUAL	R-PDIP-T28	1	5.5 V	5.7 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	10 ms	262144 bit	4.5 V		64				.00002 Amp	35.6 mm	100 ns	5	YES
HN58V66API-10E	Renesas Electronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	8192 words	3.6	YES	3/5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel	8KX8	8K	-40 Cel	NO		YES	DUAL	R-PDIP-T28		5.5 V	5.7 mm		15.24 mm	Not Qualified	10 ms	65536 bit	2.7 V		64		NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	35.6 mm	100 ns	3	YES
HN58C256FP-15	Renesas Electronics	EEPROM		28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE				1.27 mm		32KX8	32K			TIN LEAD		DUAL	R-PDSO-G28			3 mm		8.4 mm	Not Qualified		262144 bit				e0				18.3 mm	150 ns	5
HN58C256AT-85E	Renesas Electronics	EEPROM	COMMERCIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs		.5 mm	70 Cel	32KX8	32K	0 Cel	NO			DUAL	R-PDSO-G28	3	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	10 ms	262144 bit	4.5 V		64		20	260	.00002 Amp	11.8 mm	85 ns	5	YES
HN85C256ATI10E	Renesas Electronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE, THIN PROFILE				.55 mm	85 Cel	32KX8	32K	-40 Cel				DUAL	R-PDSO-G28		5.5 V	1.2 mm		8 mm		10 ms	262144 bit	4.5 V							11.8 mm	100 ns	5
HN58C256AFPI85EZ	Renesas Electronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		30 mA	32768 words	5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	85 Cel	32KX8	32K	-40 Cel	NO			DUAL	R-PDSO-G28				100000 Write/Erase Cycles		Not Qualified	10 ms	262144 bit			64				.00002 Amp		85 ns		YES
HN85C256AFPI85E	Renesas Electronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel	32KX8	32K	-40 Cel				DUAL	R-PDSO-G28		5.5 V	2.5 mm		8.4 mm		10 ms	262144 bit	4.5 V							18.3 mm	85 ns	5
R1EV58256BSCNBI#B0	Renesas Electronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	3			8	SMALL OUTLINE				1.27 mm	85 Cel	32KX8	32K	-40 Cel				DUAL	R-PDSO-G28	3	5.5 V	2.5 mm		8.4 mm		10 ms	262144 bit	2.7 V							18.3 mm	120 ns	3
HN58C256AFPI10EZ	Renesas Electronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		30 mA	32768 words	5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	85 Cel	32KX8	32K	-40 Cel	NO			DUAL	R-PDSO-G28				100000 Write/Erase Cycles		Not Qualified	10 ms	262144 bit			64				.00002 Amp		100 ns		YES
HN58C66FP-25T	Renesas Electronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE			10	1.27 mm	70 Cel	8KX8	8K	0 Cel		TIN LEAD		DUAL	R-PDSO-G28		5.5 V	3 mm		8.4 mm	Not Qualified		65536 bit	4.5 V	10 YEARS DATA RETENTION		e0				18 mm	250 ns	5
HN58V65AFP-10	Renesas Electronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	8192 words	3.3	YES	3/5	8	SMALL OUTLINE	SOP28,.45	EEPROMs		1.27 mm	70 Cel	8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28		5.5 V	2.5 mm		8.4 mm	Not Qualified	10 ms	65536 bit	2.7 V		64	e0			.000005 Amp	18.3 mm	100 ns	3	YES
R1EV58256BDANBI#B0	Renesas Electronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	3			8	IN-LINE				2.54 mm	85 Cel	32KX8	32K	-40 Cel				DUAL	R-PDIP-T28	1	5.5 V	5.7 mm		15.24 mm		10 ms	262144 bit	2.7 V							35.6 mm	120 ns	3
HN58V65AT-10SRE	Renesas Electronics	EEPROM	OTHER	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	8192 words	3.6	YES	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	85 Cel	8KX8	8K	-20 Cel	NO		YES	DUAL	R-PDSO-G28		5.5 V	1.2 mm		8 mm	Not Qualified	10 ms	65536 bit	2.7 V		64		NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	11.8 mm	100 ns	3	YES
HN58V66AP-10E	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	8192 words	3.3	YES	3/5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel	8KX8	8K	0 Cel	NO		YES	DUAL	R-PDIP-T28		5.5 V	5.7 mm		15.24 mm	Not Qualified	10 ms	65536 bit	2.7 V		64		NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	35.6 mm	100 ns	3	YES
HN58C256ATI10E	Renesas Electronics	EEPROM	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		30 mA	32768 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs		.55 mm	85 Cel	32KX8	32K	-40 Cel	NO			DUAL	R-PDSO-G28	3			100000 Write/Erase Cycles		Not Qualified	10 ms	262144 bit			64		20	260	.00002 Amp		100 ns		YES
HN58C256AT-10	Renesas Electronics	EEPROM	COMMERCIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs		.5 mm	70 Cel	32KX8	32K	0 Cel	NO	TIN LEAD		DUAL	R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	10 ms	262144 bit	4.5 V		64	e0			.00002 Amp	11.8 mm	100 ns	5	YES
HN58C256AFP-85	Renesas Electronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	SMALL OUTLINE	SOP28,.45	EEPROMs		1.27 mm	70 Cel	32KX8	32K	0 Cel	NO	TIN LEAD		DUAL	R-PDSO-G28		5.5 V	2.5 mm	100000 Write/Erase Cycles	8.4 mm	Not Qualified	10 ms	262144 bit	4.5 V		64	e0			.00002 Amp	18.3 mm	85 ns	5	YES
HN58C256P-20	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE			10	2.54 mm	70 Cel	32KX8	32K	0 Cel		TIN LEAD		DUAL	R-PDIP-T28		5.5 V	5.7 mm		15.24 mm	Not Qualified		262144 bit	4.5 V	100K ERASE/WRITE CYCLES; DATA RETENTION 10 YEARS		e0				35.6 mm	200 ns	5
HN58V66AFP-10	Renesas Electronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	8192 words	3.3	YES	3/5	8	SMALL OUTLINE	SOP28,.45	EEPROMs		1.27 mm	70 Cel	8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28		5.5 V	2.5 mm		8.4 mm	Not Qualified	10 ms	65536 bit	2.7 V		64	e0			.000005 Amp	18.3 mm	100 ns	3	YES
R1EV58064BDARBI#B0	Renesas Electronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	3			8	IN-LINE				2.54 mm	85 Cel	8KX8	8K	-40 Cel				DUAL	R-PDIP-T28	1	5.5 V	5.7 mm		15.24 mm		10 ms	65536 bit	2.7 V							35.6 mm	100 ns	3
HN58V66AT-10	Renesas Electronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	8192 words	3.3	YES	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	70 Cel	8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28		5.5 V	1.2 mm		8 mm	Not Qualified	10 ms	65536 bit	2.7 V		64	e0			.000005 Amp	11.8 mm	100 ns	3	YES
R1EV58256BTCNBI#B0	Renesas Electronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	3			8	SMALL OUTLINE, THIN PROFILE				.55 mm	85 Cel	32KX8	32K	-40 Cel				DUAL	R-PDSO-G28	3	5.5 V	1.2 mm		8 mm		10 ms	262144 bit	2.7 V							11.8 mm	120 ns	3
HN58V66ATI-10	Renesas Electronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	8192 words	3.6	YES	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	85 Cel	8KX8	8K	-40 Cel	NO		YES	DUAL	R-PDSO-G28	1	5.5 V	1.2 mm		8 mm	Not Qualified	10 ms	65536 bit	2.7 V		64				.000005 Amp	11.8 mm	100 ns	3	YES
HN58V65AT-10SR	Renesas Electronics	EEPROM	OTHER	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	8192 words	3.6	YES	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	85 Cel	8KX8	8K	-20 Cel	NO		YES	DUAL	R-PDSO-G28	1	5.5 V	1.2 mm		8 mm	Not Qualified	10 ms	65536 bit	2.7 V		64				.000005 Amp	11.8 mm	100 ns	3	YES
HN85C256AFPI10E	Renesas Electronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel	32KX8	32K	-40 Cel				DUAL	R-PDSO-G28		5.5 V	2.5 mm		8.4 mm		10 ms	262144 bit	4.5 V							18.3 mm	100 ns	5
HN58V66AT-10E	Renesas Electronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	8192 words	3.3	YES	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	70 Cel	8KX8	8K	0 Cel	NO		YES	DUAL	R-PDSO-G28		5.5 V	1.2 mm		8 mm	Not Qualified	10 ms	65536 bit	2.7 V		64		NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	11.8 mm	100 ns	3	YES
HN58C256AT-85	Renesas Electronics	EEPROM	COMMERCIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs		.5 mm	70 Cel	32KX8	32K	0 Cel	NO	TIN LEAD		DUAL	R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	10 ms	262144 bit	4.5 V		64	e0			.00002 Amp	11.8 mm	85 ns	5	YES
HN58C256FP-20T	Renesas Electronics	EEPROM		28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE				1.27 mm		32KX8	32K			TIN LEAD		DUAL	R-PDSO-G28			3 mm		8.4 mm	Not Qualified		262144 bit				e0				18.3 mm	200 ns	5
R1EV58064BSCNBI#S0	Renesas Electronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	3			8	SMALL OUTLINE				1.27 mm	85 Cel	8KX8	8K	-40 Cel				DUAL	R-PDSO-G28	3	5.5 V	2.5 mm		8.4 mm		10 ms	65536 bit	2.7 V							18.3 mm	100 ns	3
HN85C256API10E	Renesas Electronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	85 Cel	32KX8	32K	-40 Cel				DUAL	R-PDIP-T28		5.5 V	5.7 mm		15.24 mm		10 ms	262144 bit	4.5 V							35.6 mm	100 ns	5
HN58C256FP-20	Renesas Electronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE			10	1.27 mm	70 Cel	32KX8	32K	0 Cel		TIN LEAD		DUAL	R-PDSO-G28		5.5 V	2.5 mm		8.4 mm	Not Qualified		262144 bit	4.5 V	100K ERASE/WRITE CYCLES; DATA RETENTION 10 YEARS		e0				18.3 mm	200 ns	5
UPD28C256CZ-25	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		50 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel	32KX8	32K	0 Cel	NO	Tin/Lead (Sn/Pb)		DUAL	R-PDIP-T28				10000 Write/Erase Cycles		Not Qualified	10 ms	262144 bit			64	e0			.0001 Amp		250 ns		YES
HN58V256AT-12	Renesas Electronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	3	YES	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	70 Cel	32KX8	32K	0 Cel	NO			DUAL	R-PDSO-G28	1	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	10 ms	262144 bit	2.7 V		64				.00002 Amp	11.8 mm	120 ns	3	YES
HN58C65PI-25	Renesas Electronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	5			8	IN-LINE					85 Cel	8KX8	8K	-40 Cel		TIN LEAD		DUAL	R-PDIP-T28		5.5 V				Not Qualified		65536 bit	4.5 V			e0					250 ns	5
HN58V256AP-12	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	3			8	IN-LINE				2.54 mm	70 Cel	32KX8	32K	0 Cel		TIN LEAD		DUAL	R-PDIP-T28		5.5 V	5.7 mm		15.24 mm	Not Qualified		262144 bit	2.7 V			e0				35.6 mm	120 ns	3
HN58V66API-10	Renesas Electronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	8192 words	3.6	YES	3/5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel	8KX8	8K	-40 Cel	NO		YES	DUAL	R-PDIP-T28	1	5.5 V	5.7 mm		15.24 mm	Not Qualified	10 ms	65536 bit	2.7 V		64				.000005 Amp	35.6 mm	100 ns	3	YES
HN85C256API85E	Renesas Electronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	85 Cel	32KX8	32K	-40 Cel				DUAL	R-PDIP-T28		5.5 V	5.7 mm		15.24 mm		10 ms	262144 bit	4.5 V							35.6 mm	85 ns	5
R1EV58256BSCNBI#S0	Renesas Electronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	3			8	SMALL OUTLINE				1.27 mm	85 Cel	32KX8	32K	-40 Cel				DUAL	R-PDSO-G28	3	5.5 V	2.5 mm		8.4 mm		10 ms	262144 bit	2.7 V							18.3 mm	120 ns	3
UPD458D	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE	PARALLEL		80 mA	1024 words	5	NO	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel	1KX8	1K	-10 Cel	NO	Tin/Lead (Sn/Pb)		DUAL	R-XDIP-T28						Not Qualified		8192 bit				e0					450 ns		NO
HN58V256AFP-12	Renesas Electronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	3	YES	3/5	8	SMALL OUTLINE	SOP28,.45	EEPROMs		1.27 mm	70 Cel	32KX8	32K	0 Cel	NO			DUAL	R-PDSO-G28	1	5.5 V	2.5 mm	100000 Write/Erase Cycles	8.4 mm	Not Qualified	10 ms	262144 bit	2.7 V		64				.00002 Amp	18.3 mm	120 ns	3	YES
HN58C256API-85E	Renesas Electronics	EEPROM CARD	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		30 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel	32KX8	32K	-40 Cel	NO	MATTE TIN		DUAL	R-PDIP-T28	1			100000 Write/Erase Cycles		Not Qualified	10 ms	262144 bit			64	e3			.00002 Amp		85 ns	2.7	YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.