28 EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M28C64-120N1	STMicroelectronics	EEPROM	COMMERCIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		30 mA	8192 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs		.55 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28						Not Qualified		65536 bit			64	e0	.0001 Amp		120 ns		YES
M27W512-70N6F	STMicroelectronics	EEPROM CARD	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			15 mA	65536 words	COMMON			3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	OTP ROMs		.55 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		MATTE TIN		DUAL	R-PDSO-G28	1					Not Qualified		524288 bit				e3	.000015 Amp		70 ns	2.7
M28LV64-300XN1	STMicroelectronics	EEPROM	COMMERCIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words			YES	3/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs	40	.55 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28		3.6 V	1.25 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		65536 bit	2.7 V	ENDURANCE >100000 ERASE/WRITE CYCLES; DATA RETENTION >40 YEARS; SOFTWARE DATA PROTECTION	64	e0	.00002 Amp	11.8 mm	300 ns	3	YES
M28256-20WBS1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3	YES	3/3.3	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	MATTE TIN		DUAL	R-PDIP-T28		3.6 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	5 ms	262144 bit	2.7 V		64	e3	.00002 Amp	36.02 mm	200 ns	3	YES
M28LV17-200N1	STMicroelectronics	EEPROM	COMMERCIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		10 mA	2048 words			YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs		.55 mm	70 Cel		2KX8	2K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28						Not Qualified		16384 bit			64	e0	.00005 Amp		200 ns		YES
M28256-15WMS3	STMicroelectronics	EEPROM	AUTOMOTIVE	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3			8	SMALL OUTLINE				1.27 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel				DUAL	R-PDSO-G28		3.6 V	2.65 mm		7.5 mm	Not Qualified		262144 bit	2.7 V					17.9 mm	150 ns	3
M28LV64-200N6	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words			YES	3/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs	40	.55 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28		3.6 V	1.25 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		65536 bit	2.7 V	ENDURANCE >100000 ERASE/WRITE CYCLES; DATA RETENTION >40 YEARS; SOFTWARE DATA PROTECTION	64	e0	.00002 Amp	11.8 mm	200 ns	3	YES
M28C16A-20MS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5			8	SMALL OUTLINE			40	1.27 mm	85 Cel		2KX8	2K	-40 Cel				DUAL	R-PDSO-G28		5.5 V	2.65 mm	100000 Write/Erase Cycles	7.5 mm	Not Qualified		16384 bit	4.5 V	ENDURANCE >100000 WRITE/ERASE CYCLES; DATA RETENTION > 40 YEARS; 32 BYTE PAGE WRITE				17.9 mm	200 ns	5
M28C17-90MS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5			8	SMALL OUTLINE				1.27 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel				DUAL	R-PDSO-G28		5.5 V	2.65 mm		7.5 mm	Not Qualified	3 ms	16384 bit	4.5 V					17.9 mm	90 ns	5
M28256-90WMS1	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3	YES	3/3.3	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	70 Cel		32KX8	32K	0 Cel	NO	MATTE TIN		DUAL	R-PDSO-G28		3.6 V	2.65 mm	100000 Write/Erase Cycles	7.5 mm	Not Qualified	5 ms	262144 bit	2.7 V		64	e3	.00002 Amp	17.9 mm	90 ns	3	YES
M28LV64C-300MS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		15 mA	8192 words		3.3	YES	3.3	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28				100000 Write/Erase Cycles		Not Qualified	10 ms	65536 bit			32	e0	.00005 Amp		300 ns		YES
M28C64-20WNS1T	STMicroelectronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs	40	.55 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28		3.6 V	1.2 mm		8 mm	Not Qualified	5 ms	65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0	.00002 Amp	11.8 mm	200 ns	3	YES
M28256-120BS1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		30 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel		32KX8	32K	0 Cel	NO	TIN LEAD		DUAL	R-PDIP-T28				100000 Write/Erase Cycles		Not Qualified	3 ms	262144 bit			64	e0	.0001 Amp		120 ns		YES
M28LV64C-200MS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		15 mA	8192 words		3.3	YES	3.3	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28				100000 Write/Erase Cycles		Not Qualified	10 ms	65536 bit			32	e0	.00005 Amp		200 ns		YES
M28C64-12WNS1T	STMicroelectronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs	40	.55 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28		3.6 V	1.2 mm		8 mm	Not Qualified	5 ms	65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0	.00002 Amp	11.8 mm	120 ns	3	YES
M27C256B-90XN6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			30 mA	32768 words	COMMON	5		5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	OTP ROMs		.55 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		TIN LEAD		DUAL	R-PDSO-G28								262144 bit				e0	.0001 Amp		90 ns	2.7
M28C17-90N6	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		30 mA	2048 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs		.55 mm	85 Cel		2KX8	2K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28						Not Qualified		16384 bit			64	e0	.0001 Amp		90 ns		YES
M28256-15WNS3T	STMicroelectronics	EEPROM	AUTOMOTIVE	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH				.55 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel				DUAL	R-PDSO-G28		3.6 V	1.25 mm		8 mm	Not Qualified		262144 bit	2.7 V					11.8 mm	150 ns	3
M28LV64-250XN6	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words			YES	3/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs	40	.55 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28		3.6 V	1.25 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		65536 bit	2.7 V	ENDURANCE >100000 ERASE/WRITE CYCLES; DATA RETENTION >40 YEARS; SOFTWARE DATA PROTECTION	64	e0	.00002 Amp	11.8 mm	250 ns	3	YES
M28LV64C-300P1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		15 mA	8192 words		3.3	YES	3.3	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDIP-T28				100000 Write/Erase Cycles		Not Qualified	10 ms	65536 bit			32	e0	.00005 Amp		300 ns		YES
M28256-15BS3	STMicroelectronics	EEPROM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES		8	IN-LINE	DIP28,.6		10	2.54 mm	125 Cel		32KX8	32K	-40 Cel	NO			DUAL	R-PDIP-T28		5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified		262144 bit	4.5 V		64		.0001 Amp	36.02 mm	150 ns	5	YES
M28256-15BS1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	MATTE TIN		DUAL	R-PDIP-T28		5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	5 ms	262144 bit	4.5 V		64	e3	.0001 Amp	36.02 mm	150 ns	5	YES
M27C256B-25XN6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			30 mA	32768 words	COMMON	5		5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	OTP ROMs		.55 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		TIN LEAD		DUAL	R-PDSO-G28								262144 bit				e0	.0001 Amp		250 ns	2.7
M28C16A-15NS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	2048 words		5	YES	5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs	40	.55 mm	85 Cel		2KX8	2K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28		5.5 V	1.25 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		16384 bit	4.5 V	ENDURANCE >100000 WRITE/ERASE CYCLES; DATA RETENTION > 40 YEARS; 32 BYTE PAGE WRITE	32	e0	.00005 Amp	11.8 mm	150 ns	5	YES
M27C256B-60N1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			30 mA	32768 words	COMMON	5		5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	OTP ROMs		.55 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		TIN LEAD		DUAL	R-PDSO-G28						Not Qualified		262144 bit				e0	.0001 Amp		60 ns	2.7
M28C64C-200MS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs	40	1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28		5.5 V	2.65 mm	100000 Write/Erase Cycles	7.5 mm	Not Qualified	5 ms	65536 bit	4.5 V	32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS	32	e0	.0001 Amp	17.9 mm	200 ns	5	YES
M28LV64-200P1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	8192 words			YES	3/3.3	8	IN-LINE	DIP28,.6	EEPROMs	40	2.54 mm	70 Cel		8KX8	8K	0 Cel	NO	MATTE TIN	YES	DUAL	R-PDIP-T28		3.6 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified		65536 bit	2.7 V	ENDURANCE >100000 ERASE/WRITE CYCLES; DATA RETENTION >40 YEARS; SOFTWARE DATA PROTECTION	64	e3	.00002 Amp	36.02 mm	200 ns	3	YES
M28C64-90WMS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	SMALL OUTLINE	SOP28,.4	EEPROMs	40	1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	MATTE TIN	YES	DUAL	R-PDSO-G28		3.6 V	2.65 mm		7.5 mm	Not Qualified		65536 bit	2.7 V	40 YEARS DATA RETENTION; SOFTWARE DATA PROTECTION	64	e3	.00002 Amp	17.9 mm	90 ns	3	YES
M28C16A-20BS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	2048 words		5	YES	5	8	IN-LINE	DIP24,.6	EEPROMs	40	2.54 mm	85 Cel		2KX8	2K	-40 Cel	NO	MATTE TIN		DUAL	R-PDIP-T28		5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified		16384 bit	4.5 V	ENDURANCE >100000 WRITE/ERASE CYCLES; DATA RETENTION > 40 YEARS; 32 BYTE PAGE WRITE	32	e3	.00005 Amp	37.085 mm	200 ns	5	YES
M28256-15WMS3T	STMicroelectronics	EEPROM	AUTOMOTIVE	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3			8	SMALL OUTLINE				1.27 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel				DUAL	R-PDSO-G28		3.6 V	2.65 mm		7.5 mm	Not Qualified		262144 bit	2.7 V					17.9 mm	150 ns	3
M28C64-15MS1	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs	40	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	MATTE TIN	YES	DUAL	R-PDSO-G28		5.5 V	2.65 mm		7.5 mm	Not Qualified	3 ms	65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e3	.0001 Amp	17.9 mm	150 ns	5	YES
M28LV17-300P1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	2048 words		3.3	YES	3/3.3	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDIP-T28		3.6 V	5.08 mm		15.24 mm	Not Qualified		16384 bit	2.7 V		64	e0	.00005 Amp	36.02 mm	300 ns	3	YES
M28C64-90WMS1	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	SMALL OUTLINE	SOP28,.4	EEPROMs	40	1.27 mm	70 Cel		8KX8	8K	0 Cel	NO	MATTE TIN	YES	DUAL	R-PDSO-G28		3.6 V	2.65 mm		7.5 mm	Not Qualified		65536 bit	2.7 V	40 YEARS DATA RETENTION; SOFTWARE DATA PROTECTION	64	e3	.00002 Amp	17.9 mm	90 ns	3	YES
M28256-150MS1	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		30 mA	32768 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	70 Cel		32KX8	32K	0 Cel	NO	TIN LEAD		DUAL	R-PDSO-G28				100000 Write/Erase Cycles		Not Qualified	3 ms	262144 bit			64	e0	.0001 Amp		150 ns		YES
M28LV17-200MS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		3.3			8	SMALL OUTLINE				1.27 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel				DUAL	R-PDSO-G28		3.6 V	2.65 mm		7.5 mm	Not Qualified		16384 bit	2.7 V					17.9 mm	200 ns	3
M28LV16-250N1T	STMicroelectronics	EEPROM	COMMERCIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		3.3			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH				.55 mm	70 Cel	3-STATE	2KX8	2K	0 Cel				DUAL	R-PDSO-G28		3.6 V	1.25 mm		8 mm	Not Qualified		16384 bit	2.7 V					11.8 mm	250 ns	3
M28256-20WNS3T	STMicroelectronics	EEPROM	AUTOMOTIVE	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH				.55 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel				DUAL	R-PDSO-G28		3.6 V	1.25 mm		8 mm	Not Qualified		262144 bit	2.7 V					11.8 mm	200 ns	3
M28256-90NS1T	STMicroelectronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5			8	SMALL OUTLINE, THIN PROFILE				.55 mm	70 Cel	3-STATE	32KX8	32K	0 Cel				DUAL	R-PDSO-G28		5.5 V	1.2 mm		8 mm	Not Qualified	5 ms	262144 bit	4.5 V					11.8 mm	90 ns	5
M28256-12WNS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	85 Cel		32KX8	32K	-40 Cel	NO	TIN LEAD		DUAL	R-PDSO-G28		3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	5 ms	262144 bit	2.7 V		64	e0	.00002 Amp	11.8 mm	120 ns	3	YES
M28C64X-150N6	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs	40	.55 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD		DUAL	R-PDSO-G28		5.5 V	1.25 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	5 ms	65536 bit	4.5 V	32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS	32	e0	.0001 Amp	11.8 mm	150 ns	5	YES
M28C64C-150M6	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	SMALL OUTLINE	SOP28,.5	EEPROMs	10	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28		5.5 V		100000 Write/Erase Cycles		Not Qualified	5 ms	65536 bit	4.5 V	32 BYTE PAGE WRITE; 100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 10 YEARS	32	e0	.0001 Amp		150 ns	5	YES
M28LV64-300P1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	8192 words			YES	3/3.3	8	IN-LINE	DIP28,.6	EEPROMs	40	2.54 mm	70 Cel		8KX8	8K	0 Cel	NO	MATTE TIN	YES	DUAL	R-PDIP-T28		3.6 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified		65536 bit	2.7 V	ENDURANCE >100000 ERASE/WRITE CYCLES; DATA RETENTION >40 YEARS; SOFTWARE DATA PROTECTION	64	e3	.00002 Amp	36.02 mm	300 ns	3	YES
M28C16-30WNS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		3			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH			40	.55 mm	85 Cel		2KX8	2K	-40 Cel				DUAL	R-PDSO-G28		3.6 V	1.25 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		16384 bit	2.7 V	ENDURANCE >100000 WRITE/ERASE CYCLES; DATA RETENTION > 40 YEARS; 32 BYTE PAGE WRITE				11.8 mm	300 ns	3
M28256-25WMS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3			8	SMALL OUTLINE				1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel				DUAL	R-PDSO-G28		3.6 V	2.65 mm		7.5 mm	Not Qualified	5 ms	262144 bit	2.7 V					17.9 mm	250 ns	3
M28256-20WMS3	STMicroelectronics	EEPROM	AUTOMOTIVE	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3			8	SMALL OUTLINE				1.27 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel				DUAL	R-PDSO-G28		3.6 V	2.65 mm		7.5 mm	Not Qualified		262144 bit	2.7 V					17.9 mm	200 ns	3
M28C64-90WMS1T	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	SMALL OUTLINE	SOP28,.4	EEPROMs	40	1.27 mm	70 Cel		8KX8	8K	0 Cel	NO	MATTE TIN	YES	DUAL	R-PDSO-G28		3.6 V	2.65 mm		7.5 mm	Not Qualified		65536 bit	2.7 V	40 YEARS DATA RETENTION; SOFTWARE DATA PROTECTION	64	e3	.00002 Amp	17.9 mm	90 ns	3	YES
M28C64-120XP6	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		30 mA	8192 words		5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDIP-T28						Not Qualified		65536 bit			64	e0	.0001 Amp		120 ns		YES
M28C64C-250P1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs	40	2.54 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDIP-T28		5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	5 ms	65536 bit	4.5 V	32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS	32	e0	.0001 Amp	37.085 mm	250 ns	5	YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.