32 EEPROM 2,047

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M28C16B-150WK1	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	10 mA	2048 words		3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel		2KX8	2K	0 Cel	NO	MATTE TIN		QUAD	R-PQCC-J32	3.6 V	3.56 mm		11.455 mm	Not Qualified		16384 bit	2.7 V		64	e3	.00002 Amp	13.995 mm	150 ns	3	YES
M28C16A-30WKA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL		15 mA	2048 words			YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		2KX8	2K	-40 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32					Not Qualified		16384 bit			32	e0	.00002 Amp		300 ns		YES
M28010-10WKA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	26 mA	131072 words		3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		128KX8	128K	-40 Cel	NO	MATTE TIN		QUAD	R-PQCC-J32	3.6 V	3.56 mm		11.455 mm	Not Qualified	10 ms	1048576 bit	2.7 V		128	e3	.00003 Amp	13.995 mm	100 ns	3	YES
M28256-90KA1T	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel				QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified	5 ms	262144 bit	4.5 V					13.995 mm	90 ns	5
M28256-15KA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	MATTE TIN		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.455 mm	Not Qualified	5 ms	262144 bit	4.5 V		64	e3	.0001 Amp	13.995 mm	150 ns	5	YES
M28010-15WBA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		3			8	IN-LINE				2.54 mm	85 Cel		128KX8	128K	-40 Cel				DUAL	R-PDIP-T32	3.6 V	5.08 mm		15.24 mm	Not Qualified	10 ms	1048576 bit	2.7 V					41.91 mm	150 ns	3
M28C17-120K1T	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		2048 words		5			8	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	2KX8	2K	0 Cel				QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified	3 ms	16384 bit	4.5 V					13.995 mm	120 ns	5
M28010-12KA1T	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel		128KX8	128K	0 Cel	NO	MATTE TIN		QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified	10 ms	1048576 bit	4.5 V		128	e3	.00005 Amp	13.995 mm	120 ns	5	YES
M28C64-90XK6	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL		30 mA	8192 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD	YES	QUAD	R-PQCC-J32					Not Qualified		65536 bit			64	e0	.0001 Amp		90 ns		YES
M28C64-30WKA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	40	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	MATTE TIN	YES	QUAD	R-PQCC-J32	3.6 V	3.56 mm		11.455 mm	Not Qualified	5 ms	65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e3	.00002 Amp	13.995 mm	300 ns	3	YES
M28010-12NA1T	STMicroelectronics	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	EEPROMs		.5 mm	70 Cel		128KX8	128K	0 Cel	NO	TIN LEAD		DUAL	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	10 ms	1048576 bit	4.5 V		128	e0	.00005 Amp	18.4 mm	120 ns	5	YES
M28LV64X-200K6	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL		15 mA	8192 words		3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32			100000 Write/Erase Cycles		Not Qualified	10 ms	65536 bit			32	e0	.00005 Amp		200 ns		YES
M27C256B-15XC6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND			30 mA	32768 words	COMMON	5		5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		MATTE TIN		QUAD	R-PQCC-J32							262144 bit				e3	.0001 Amp		150 ns	2.7
M28C17B-120WK6	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	10 mA	2048 words		3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		2KX8	2K	-40 Cel	NO	MATTE TIN	YES	QUAD	R-PQCC-J32	3.6 V	3.56 mm		11.455 mm	Not Qualified	5 ms	16384 bit	2.7 V		64	e3	.00002 Amp	13.995 mm	120 ns	3	YES
M27C256B-80C1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND			30 mA	32768 words	COMMON	5		5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		MATTE TIN		QUAD	R-PQCC-J32							262144 bit				e3	.0001 Amp		80 ns	2.7
M28010-15RNA1	STMicroelectronics	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		2			8	SMALL OUTLINE, THIN PROFILE			10	.5 mm	70 Cel		128KX8	128K	0 Cel				DUAL	R-PDSO-G32	2.4 V	1.2 mm		8 mm	Not Qualified		1048576 bit	1.8 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				18.4 mm	150 ns	3
M27C256B-20C6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND			30 mA	32768 words	COMMON	5		5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		MATTE TIN		QUAD	R-PQCC-J32							262144 bit				e3	.0001 Amp		200 ns	2.7
M28010-25WKA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	26 mA	131072 words		3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	85 Cel		128KX8	128K	-40 Cel	NO	Matte Tin (Sn)		QUAD	R-PQCC-J32	3.6 V	3.56 mm		11.455 mm	Not Qualified		1048576 bit	2.7 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	128	e3	.00003 Amp	13.995 mm	250 ns	3	YES
M28010-25RNA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	131072 words		2	YES	1.8/2.4	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	EEPROMs		.5 mm	85 Cel		128KX8	128K	-40 Cel	NO	TIN LEAD		DUAL	R-PDSO-G32	2.4 V	1.2 mm		8 mm	Not Qualified	10 ms	1048576 bit	1.8 V		128	e0	.00003 Amp	18.4 mm	250 ns	3	YES
M28010-20BA1	STMicroelectronics	EEPROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5			8	IN-LINE			10	2.54 mm	70 Cel		128KX8	128K	0 Cel				DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified		1048576 bit	4.5 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				41.91 mm	200 ns	5
M28256-15KA3	STMicroelectronics	EEPROM	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER				1.27 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel				QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified		262144 bit	4.5 V					13.995 mm	150 ns	5
M28010-25WNA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	26 mA	131072 words		3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	EEPROMs	10	.5 mm	85 Cel		128KX8	128K	-40 Cel	NO	TIN LEAD		DUAL	R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified		1048576 bit	2.7 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	128	e0	.00003 Amp	18.4 mm	250 ns	3	YES
M28010-10KA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		128KX8	128K	-40 Cel	NO	MATTE TIN		QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified	10 ms	1048576 bit	4.5 V		128	e3	.00005 Amp	13.995 mm	100 ns	5	YES
M28010-12RNA1	STMicroelectronics	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		2			8	SMALL OUTLINE, THIN PROFILE			10	.5 mm	70 Cel		128KX8	128K	0 Cel				DUAL	R-PDSO-G32	2.4 V	1.2 mm		8 mm	Not Qualified		1048576 bit	1.8 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				18.4 mm	120 ns	3
M28010-25WKA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	26 mA	131072 words		3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	85 Cel		128KX8	128K	-40 Cel	NO	Matte Tin (Sn)		QUAD	R-PQCC-J32	3.6 V	3.56 mm		11.455 mm	Not Qualified		1048576 bit	2.7 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	128	e3	.00003 Amp	13.995 mm	250 ns	3	YES
M28C64-30WKA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	40	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	MATTE TIN	YES	QUAD	R-PQCC-J32	3.6 V	3.56 mm		11.455 mm	Not Qualified	5 ms	65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e3	.00002 Amp	13.995 mm	300 ns	3	YES
M28LV64-300XK6	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	10 mA	8192 words			YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	40	1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	MATTE TIN	YES	QUAD	R-PQCC-J32	3.6 V	3.56 mm	100000 Write/Erase Cycles	11.455 mm	Not Qualified		65536 bit	2.7 V	ENDURANCE >100000 ERASE/WRITE CYCLES; DATA RETENTION >40 YEARS; SOFTWARE DATA PROTECTION	64	e3	.00002 Amp	13.995 mm	300 ns	3	YES
M28C16A-25WKA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL		15 mA	2048 words			YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		2KX8	2K	-40 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32					Not Qualified		16384 bit			32	e0	.00002 Amp		250 ns		YES
M28C64-90K1	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL		30 mA	8192 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD	YES	QUAD	R-PQCC-J32					Not Qualified		65536 bit			64	e0	.0001 Amp		90 ns		YES
M28010-25RBA1T	STMicroelectronics	EEPROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		2			8	IN-LINE				2.54 mm	70 Cel		128KX8	128K	0 Cel				DUAL	R-PDIP-T32	2.4 V	5.08 mm		15.24 mm	Not Qualified	10 ms	1048576 bit	1.8 V					41.91 mm	250 ns	3
M28C64-90KA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	40	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD	YES	QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified	3 ms	65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0	.0001 Amp	13.995 mm	90 ns	5	YES
M28010-25WNA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	26 mA	131072 words		3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	EEPROMs	10	.5 mm	85 Cel		128KX8	128K	-40 Cel	NO	TIN LEAD		DUAL	R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified		1048576 bit	2.7 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	128	e0	.00003 Amp	18.4 mm	250 ns	3	YES
M28010-15RKA1T	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		2			8	CHIP CARRIER			10	1.27 mm	70 Cel		128KX8	128K	0 Cel				QUAD	R-PQCC-J32	2.4 V	3.56 mm		11.455 mm	Not Qualified		1048576 bit	1.8 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				13.995 mm	150 ns	3
M28256-20WKA1	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	MATTE TIN		QUAD	R-PQCC-J32	3.6 V	3.56 mm	100000 Write/Erase Cycles	11.455 mm	Not Qualified	5 ms	262144 bit	2.7 V		64	e3	.00002 Amp	13.995 mm	200 ns	3	YES
M27C256B-70XC6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND			30 mA	32768 words	COMMON	5		5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		MATTE TIN		QUAD	R-PQCC-J32							262144 bit				e3	.0001 Amp		70 ns	2.7
M27C256B-15C3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND			30 mA	32768 words	COMMON	5		5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs		1.27 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		MATTE TIN		QUAD	R-PQCC-J32							262144 bit				e3	.0001 Amp		150 ns	2.7
M28010-25NA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	EEPROMs	10	.5 mm	85 Cel		128KX8	128K	-40 Cel	NO	TIN LEAD		DUAL	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified		1048576 bit	4.5 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	128	e0	.00005 Amp	18.4 mm	250 ns	5	YES
M28C64-150K1	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL		30 mA	8192 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD	YES	QUAD	R-PQCC-J32					Not Qualified		65536 bit			64	e0	.0001 Amp		150 ns		YES
M28C64-90KA1T	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	40	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	MATTE TIN	YES	QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified	3 ms	65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e3	.0001 Amp	13.995 mm	90 ns	5	YES
M27C256B-60XC3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND			30 mA	32768 words	COMMON	5		5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs		1.27 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		MATTE TIN		QUAD	R-PQCC-J32							262144 bit				e3	.0001 Amp		60 ns	2.7
M28256-90WKA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO	MATTE TIN		QUAD	R-PQCC-J32	3.6 V	3.56 mm	100000 Write/Erase Cycles	11.455 mm	Not Qualified	5 ms	262144 bit	2.7 V		64	e3	.00002 Amp	13.995 mm	90 ns	3	YES
M28010-12BA1	STMicroelectronics	EEPROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs		2.54 mm	70 Cel		128KX8	128K	0 Cel	NO	MATTE TIN		DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified	10 ms	1048576 bit	4.5 V		128	e3	.00005 Amp	41.91 mm	120 ns	5	YES
M28C16B-120WK6TR	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	10 mA	2048 words		3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		2KX8	2K	-40 Cel	NO	MATTE TIN		QUAD	R-PQCC-J32	3.6 V	3.56 mm		11.455 mm	Not Qualified		16384 bit	2.7 V		64	e3	.00002 Amp	13.995 mm	120 ns	3	YES
M28010-10BA1T	STMicroelectronics	EEPROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5			8	IN-LINE				2.54 mm	70 Cel		128KX8	128K	0 Cel				DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified	10 ms	1048576 bit	4.5 V					41.91 mm	100 ns	5
M28256-12KA3	STMicroelectronics	EEPROM	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER				1.27 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel				QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified		262144 bit	4.5 V					13.995 mm	120 ns	5
M28010-20WBA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	26 mA	131072 words		3	YES	3/3.3	8	IN-LINE	DIP32,.6	EEPROMs	10	2.54 mm	85 Cel		128KX8	128K	-40 Cel	NO	Matte Tin (Sn)		DUAL	R-PDIP-T32	3.6 V	5.08 mm		15.24 mm	Not Qualified		1048576 bit	2.7 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	128	e3	.00003 Amp	41.91 mm	200 ns	3	YES
5962-3826716QMX	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS		131072 words		5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		TIN LEAD		DUAL	R-CDFP-F32	5.5 V	3.1242 mm		11.05 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e0		20.828 mm	250 ns	5
5962-3826717V6C	Maxim Integrated	EEPROM	MILITARY	32	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		131072 words		5			8	FLATPACK				1.27 mm	125 Cel		128KX8	128K	-55 Cel		GOLD		DUAL	R-XDFP-F32	5.5 V	3.81 mm		12.195 mm	Not Qualified	10 ms	1048576 bit	4.5 V			e4			200 ns	5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.